DC ELECTRICAL CHARACTERISTICS*1
(VDD = 3.3V-0.3V; -55°C < TC < +125°C); Unless otherwise noted, Tc is per the temperature noted.
Notes:
* For devices procured with a total ionizing dose tolerance guarantee, the post-irradiation performance is guaranteed at 25oC per MIL-STD-883 Method 1019, Condition
A up to the maximum TID level procured.
1. Current into device pins is defined as positive. Current out of device pins is defined as negative. All voltages are referenced to grou n d.
2. Output short circuit current (IOS) is specified as magnitude only, minus sign indicates direction only. Only one output should be shorted at a time, for a maximum
duration of one second .
3. Guaranteed by characterization.
4. Devices are tested @ 3.6V only.
5. Clock outputs guaranteed by design.
6. Post 100Krad and 300Krad, I CCZ = 200μA.
SYMBOL PARAMETER CONDITION MIN MAX UNIT
CMOS/TTL DC SPECIFICATIONS
VIH High-level input voltage 2.0 VDD V
VIL Low-level input voltage GND 0.8 V
IIH High-level input current VIN = 3.6V; VDD = 3.6V -10 +10 μA
IIL Low-level input current VIN = 0V; VDD = 3.6V -10 +10 μA
VCL Input clamp voltage ICL = -18mA -1.5 V
ICS Cold Spare Leakage current VIN = 3.6V; VDD = VSS -20 +20 μA
LVDS OUTPUT DC SPECIFICATIONS (OUT+, OUT-)
VOD5Differential Output Voltage RL = 100Ω (See Figure 14) 250 400 mV
ΔVOD5Change in VOD between
complimentary output states RL = 100Ω (See Figure 14) 35 mV
VOS5Offset Voltage RL = 100Ω, 1.120 1.410 V
ΔVOS5Change in VOS between
complimentary output states RL = 100Ω35 mV
IOZ4Output Three-State Current PWR DWN = 0V
VOUT = 0V or VDD
-10 +10 μΑ
ICSOUT Cold Spare Leakage Current VIN=3.6V, VDD = VSS -20 +20 μΑ
IOS2,3 Output Short Circuit Current VOUT+ or VOUT- = 0V 5mA mA
Supply Current
ICCL4Transmitter supply current with
loads RL = 100Ω all channels (figure 5)
CL = 5pF, f = 50MHz
65.0 mA
ICCZ4,6 Power down current DIN = VSS
PWR DWN = 0V, f = 0Hz
60.0 μA
Vos Voh Vol+
2
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