APT47F60J 600V, 49A, 0.09 Max, trr 310ns N-Channel FREDFET S S Power MOS 8TM is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability. D G SO 2 T- 27 "UL Recognized" file # E145592 IS OTO P (R) D APT47F60J Single die FREDFET G S FEATURES TYPICAL APPLICATIONS * Fast switching with low EMI * ZVS phase shifted and other full bridge * Low trr for high reliability * Half bridge * Ultra low Crss for improved noise immunity * PFC and other boost converter * Low gate charge * Buck converter * Avalanche energy rated * Single and two switch forward * RoHS compliant * Flyback Absolute Maximum Ratings Symbol ID Parameter Unit Ratings Continuous Drain Current @ TC = 25C 49 Continuous Drain Current @ TC = 100C 31 A IDM Pulsed Drain Current VGS Gate-Source Voltage 30 V EAS Single Pulse Avalanche Energy 2 1845 mJ IAR Avalanche Current, Repetitive or Non-Repetitive 33 A 1 245 Thermal and Mechanical Characteristics Min Typ Max Unit W PD Total Power Dissipation @ TC = 25C 540 RJC Junction to Case Thermal Resistance 0.23 RCS Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range VIsolation RMS Voltage (50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) WT Torque Package Weight Terminals and Mounting Screws. Microsemi Website - http://www.microsemi.com -55 150 C V 2500 1.03 oz 29.2 g 10 in*lbf 1.1 N*m 8-2011 TJ,TSTG C/W 0.15 Rev C Characteristic 050-8174 Symbol Static Characteristics TJ = 25C unless otherwise specified Symbol Parameter Test Conditions Min VBR(DSS) Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 600 VBR(DSS)/TJ Drain-Source On Resistance VGS(th) Gate-Source Threshold Voltage VGS(th)/TJ VGS = 10V, ID = 33A 3 Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current Dynamic Characteristics VDS = 600V TJ = 25C VGS = 0V TJ = 125C Forward Transconductance Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance Typ Max 0.57 0.075 4 -10 0.09 5 250 1000 100 VGS = 30V Unit V V/C V mV/C A nA TJ = 25C unless otherwise specified Parameter gfs 2.5 VGS = VDS, ID = 2.5mA Threshold Voltage Temperature Coefficient IDSS Symbol Reference to 25C, ID = 250A Breakdown Voltage Temperature Coefficient RDS(on) APT47F60J Min Test Conditions VDS = 50V, ID = 33A 4 Effective Output Capacitance, Charge Related Co(er) 5 Effective Output Capacitance, Energy Related Max 65 13190 135 1210 VGS = 0V, VDS = 25V f = 1MHz Co(cr) Typ Unit S pF 645 VGS = 0V, VDS = 0V to 400V 335 Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(on) Turn-On Delay Time Resistive Switching Current Rise Time VDD = 400V, ID = 33A tr td(off) tf Turn-Off Delay Time 330 70 140 75 85 225 70 VGS = 0 to 10V, ID = 33A, VDS = 300V RG = 2.2 6 , VGG = 15V Current Fall Time nC ns Source-Drain Diode Characteristics Symbol IS ISM VSD Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Irrm Reverse Recovery Current dv/dt Peak Recovery dv/dt Test Conditions Min Typ D MOSFET symbol showing the integral reverse p-n junction diode (body diode) A 245 S TJ = 25C TJ = 125C TJ = 25C VDD = 100V TJ = 125C diSD/dt = 100A/s TJ = 25C Unit 49 G ISD = 33A, TJ = 25C, VGS = 0V ISD = 33A 3 Max TJ = 125C ISD 33A, di/dt 1000A/s, VDD = 400V, TJ = 125C 268 474 1.6 4.2 11.4 17 1.0 310 570 V ns C A 20 V/ns 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 050-8174 Rev C 8-2011 2 Starting at TJ = 25C, L = 3.39mH, RG = 25, IAS = 33A. 3 Pulse test: Pulse Width < 380s, duty cycle < 2%. 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -1.28E-7/VDS^2 + 5.36E-8/VDS + 2.00E-10. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. APT47F60J 250 V GS 120 = 10V T = 125C J TJ = -55C ID, DRIAN CURRENT (A) 150 TJ = 25C 100 50 80 6V 60 40 5.5V 20 TJ = 150C TJ = 125C 0 0 5 10 15 20 25 30 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) 5V 4.5V 0 NORMALIZED TO VDS> ID(ON) x RDS(ON) MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE VGS = 10V @ 33A 2.5 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 2, Output Characteristics 250 200 ID, DRAIN CURRENT (A) 2.0 1.5 1.0 0.5 150 TJ = 25C 100 TJ = 125C 50 0 0 -55 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 3, RDS(ON) vs Junction Temperature TJ = -55C 0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 4, Transfer Characteristics 20,000 120 10,000 C, CAPACITANCE (pF) TJ = 25C TJ = 125C 60 40 1000 Coss 100 Crss 20 0 16 10 20 30 40 50 60 70 ID, DRAIN CURRENT (A) Figure 5, Gain vs Drain Current 100 200 300 400 500 600 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 6, Capacitance vs Drain-to-Source Voltage 12 VDS = 120V 10 VDS = 300V 8 6 VDS = 480V 4 2 0 0 250 ID = 33A 14 0 10 80 100 200 300 400 500 Qg, TOTAL GATE CHARGE (nC) Figure 7, Gate Charge vs Gate-to-Source Voltage 200 150 TJ = 25C 100 TJ = 150C 50 0 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 8, Reverse Drain Current vs Source-to-Drain Voltage 8-2011 80 0 VGS, GATE-TO-SOURCE VOLTAGE (V) Ciss TJ = -55C ISD, REVERSE DRAIN CURRENT (A) gfs, TRANSCONDUCTANCE 100 Rev C RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE Figure 1, Output Characteristics 3.0 = 7&8V GS 050-8174 ID, DRAIN CURRENT (A) 200 0 V 100 APT47F60J 300 300 100 IDM 10 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 100 13s 100s Rds(on) 1ms 1 0.1 10ms 10 13s 100s 0.1 10ms 100ms DC line TJ = 150C TC = 25C 1 Scaling for Different Case & Junction Temperatures: ID = ID(T = 25C)*(TJ - TC)/125 DC line 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Forward Safe Operating Area 1ms Rds(on) 100ms TJ = 125C TC = 75C 1 IDM C 1 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 10, Maximum Forward Safe Operating Area D = 0.9 0.20 0.7 0.15 0.5 Note: 0.10 P DM ZJC, THERMAL IMPEDANCE (C/W) 0.25 0.3 t2 0.05 t1 = Pulse Duration t 0.1 0 t1 0.05 10-5 Duty Factor D = 1 /t2 Peak T J = P DM x Z JC + T C SINGLE PULSE 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (seconds) Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration SOT-227 (ISOTOP(R)) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) Rev C 8-2011 3.3 (.129) 3.6 (.143) 050-8174 8.9 (.350) 9.6 (.378) Hex Nut M 4 (4 places ) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 14.9 (.587) 15.1 (.594) 0.75 (.030) 0.85 (.033) 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) * Source 30.1 (1.185) 30.3 (1.193) Drai n * Emitter terminals are shorted internally. Current handling capability is equal for either Source terminal. 38.0 (1.496) 38.2 (1.504) * Source Dimensions in Millimeters and (Inches) Gate 1.0