VS-6CWQ03FN-M3 Vishay Semiconductors Schottky Rectifier, 2 x 3.5 A FEATURES Base common cathode 4 * Low forward voltage drop * Guard ring for enhanced ruggedness and long term reliability * Halogen-free according to IEC 61249-2-21 definition 2 Common cathode 1 3 Anode Anode D-PAK (TO-252AA) * Popular D-PAK outline * Center tap configuration * Small foot print, surface mountable * High frequency operation PRODUCT SUMMARY Package D-PAK (TO-252AA) IF(AV) 2 x 3.5 A * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C * Compliant to RoHS Directive 2002/95/EC VR 30 V VF at IF See Electrical table IRM 50 mA at 125 C TJ max. 150 C Diode variation Common cathode EAS 8 mJ DESCRIPTION The VS-6CWQ03FN-M3 surface mount, center tap, Schottky rectifier series has been designed for applications requiring low forward drop and small foot prints on PC board. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) VALUES UNITS 7 A Rectangular waveform VRRM IFSM tp = 5 s sine VF 3 Apk, TJ = 125 C (per leg) TJ Range 30 V 535 A 0.35 V - 40 to 150 C VS-6CWQ03FN-M3 UNITS 30 V VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VR Maximum working peak reverse voltage VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current See fig. 5 SYMBOL TEST CONDITIONS per leg VALUES UNITS 3.5 IF(AV) 50 % duty cycle at TC = 134 C, rectangular waveform per device 7 Following any rated load condition and with rated VRRM applied A Maximum peak one cycle non-repetitive surge current per leg See fig. 7 IFSM Non-repetitive avalanche energy per leg EAS TJ = 25 C, IAS = 2 A, L = 4 mH 8 mJ IAR Current decaying linearly to zero in 1 s Frequency limited by TJ maximum VA = 1.5 x VR typical 1 A Repetitive avalanche current per leg Document Number: 93315 Revision: 28-Jan-11 5 s sine or 3 s rect. pulse 10 ms sine or 6 ms rect. pulse For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 535 90 www.vishay.com 1 VS-6CWQ03FN-M3 Schottky Rectifier, 2 x 3.5 A Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 3A Maximum forward voltage drop per leg See fig. 1 VFM (1) TJ = 25 C 6A 3A TJ = 125 C 6A Maximum reverse leakage current per leg See fig. 2 IRM (1) Threshold voltage VF(TO) TJ = 25 C VALUES UNITS 0.45 0.52 V 0.35 0.46 2 VR = Rated VR TJ = 125 C mA 50 TJ = TJ maximum 0.22 V 32.86 m Forward slope resistance rt Typical junction capacitance per leg CT VR = 5 VDC, (test signal range 100 kHz to 1 MHz), 25 C 290 pF Typical series inductance per leg LS Measured lead to lead 5 mm from package body 5.0 nH Maximum voltage rate of change dV/dt 10 000 V/s VALUES UNITS - 40 to 150 C Rated VR Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TJ (1), TStg Maximum thermal resistance, junction to case per leg per device RthJC TEST CONDITIONS DC operation See fig. 4 Approximate weight Marking device Case style D-PAK (similar to TO-252AA) 4.7 2.35 C/W 0.3 g 0.01 oz. 6CWQ03FN Note (1) dP tot 1 ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT J R thJA www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 93315 Revision: 28-Jan-11 VS-6CWQ03FN-M3 Schottky Rectifier, 2 x 3.5 A 100 Vishay Semiconductors 100 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) TJ = 150 C 10 TJ = 150 C TJ = 125 C TJ = 25 C 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 TJ = 125 C 10 TJ = 100 C 1.0 TJ = 75 C 0.1 TJ = 50 C 0.01 TJ = 25 C 0.001 2.0 2.2 5 10 15 20 25 30 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage (Per Leg) CT - Junction Capacitance (pF) 1000 TJ = 25 C 100 0 5 10 15 20 25 30 35 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg) 10 PDM 1 Single pulse (thermal resistance) 0.1 0.00001 0.0001 t1 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 0.001 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1.0 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) Document Number: 93315 Revision: 28-Jan-11 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 VS-6CWQ03FN-M3 Schottky Rectifier, 2 x 3.5 A 2.0 150 DC Average Power Loss (W) Allowable Case Temperature (C) Vishay Semiconductors 140 130 Square wave (D = 0.50) 80 % rated VR applied 120 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 1.5 RMS limit 1.0 DC 0.5 See note (1) 110 0 0 1 2 3 4 5 0 1 2 3 4 5 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current (Per Leg) Fig. 6 - Forward Power Loss Characteristics (Per Leg) IFSM - Non-Repetitive Surge Current (A) IF(AV) - Average Forward Current (A) 10 000 100 At any rated load condition and with rated VRRM applied following surge 10 10 100 1000 10 000 tp - Square Wave Pulse Duration (s) Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg) Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR www.vishay.com 4 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 93315 Revision: 28-Jan-11 VS-6CWQ03FN-M3 Schottky Rectifier, 2 x 3.5 A Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 6 C W Q 03 FN 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (7 A) 3 - Center tap configuration- 4 - Package identifier: 5 - Schottky "Q" series 6 - Voltage rating (03 = 30 V) 7 - FN = TO-252AA 8 - None = Tube TRL -M3 8 9 W = D-PAK 4 TR = Tape and reel TRL = Tape and reel (left oriented) TRR = Tape and reel (right oriented) 9 - Environmental digit: -M3 = Halogen-free, RoHS compliant and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-6CWQ03FN-M3 QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 75 3000 Antistatic plastic tube VS-6CWQ03FNTR-M3 2000 2000 13" diameter reel VS-6CWQ03FNTRL-M3 3000 3000 13" diameter reel VS-6CWQ03FNTRR-M3 3000 3000 13" diameter reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95016 Part marking information www.vishay.com/doc?95176 Packaging information www.vishay.com/doc?95033 SPICE model www.vishay.com/doc?95437 Document Number: 93315 Revision: 28-Jan-11 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 5 Outline Dimensions www.vishay.com Vishay Semiconductors D-PAK (TO-252AA) DIMENSIONS in millimeters and inches (5) A E b3 Pad layout C A (3) 0.010 M C A B c2 A L3 (3) O1 4 O2 4 B Seating plane H D (5) 1 2 3 (2) L5 b 1 A c b2 0.06 MIN. (1.524) 0.010 M C A B 0.093 (2.38) 0.085 (2.18) (L1) Detail "C" Rotated 90 CW Scale: 20:1 H (7) Lead tip C Gauge plane L2 SYMBOL 2 0.488 (12.40) 0.409 (10.40) 0.089 MIN. (2.28) Detail "C" 2x e 0.245 MIN. (6.23) D1 L4 3 0.265 MIN. (6.74) E1 MILLIMETERS INCHES C Seating plane C O L NOTES A1 SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. MIN. MAX. A 2.18 2.39 0.086 0.094 e A1 - 0.13 - 0.005 H 9.40 10.41 0.370 0.410 1.40 1.78 0.055 0.070 2.29 BSC MIN. MAX. 0.090 BSC b 0.64 0.89 0.025 0.035 L b2 0.76 1.14 0.030 0.045 L1 b3 4.95 5.46 0.195 0.215 c 0.46 0.61 0.018 0.024 L3 0.89 1.27 0.035 0.050 c2 0.46 0.89 0.018 0.035 L4 - 1.02 - 0.040 3 2.74 BSC L2 0.51 BSC NOTES 0.108 REF. 0.020 BSC D 5.97 6.22 0.235 0.245 5 L5 1.14 1.52 0.045 0.060 D1 5.21 - 0.205 - 3 O 0 10 0 10 E 6.35 6.73 0.250 0.265 5 O1 0 15 0 15 E1 4.32 - 0.170 - 3 O2 25 35 25 35 3 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension uncontrolled in L5 (3) Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad (4) Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip (5) Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (6) Dimension b1 and c1 applied to base metal only (7) Datum A and B to be determined at datum plane H (8) Outline conforms to JEDEC outline TO-252AA Revision: 05-Dec-12 Document Number: 95016 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000