MICR UALITY SEMICONDUCTOR, INC. 30 Amp HV Schottky Rectifier 50 Volt, 60 Volt, 80 Volt, 100 Volt Vary 0.85 Volts V- at |p = 30 Amps Low Leakage At High Temperature DO4 Package LTR. INCHES |__ MILLIMETERS A (265-424 6,74-10,76 B .060~.095 1,53-2,41 c (250 MAX. 6,35 MAX. D (075-.175 1,91-4,44 E A22-.453 10,72-11,5 F 405 MAX. 10,28 MAX. G 800 MAX. 20,32 MAX. H 423-438 10,75-11,12 MAXIMUM RATINGS (At T, = 25C unless otherwise noted) RATINGS SYMBOL | VSK 301008 | VSK 3080S VSK 3060S VSK 3050S UNITS DC Blocking Voltage Vem Working Peak Reverse Voltage Vawm 100 80 60 50 Volts Peak Repetitive Reverse Voltage RAM AMS Reverse Voltage Varems) 71 56 42 35 Volts Average Rectified Forward Current lo 30.0 Amps T; = 90C (See Figure 3) Peak Surge Current (non-rep} lesa 600 Amps ve cycle, 60 Hz Operating and Storage Junction Ta Tst6 65 to + 150 S Temperature Range Thermal Resistance, Junction-to-case Rese 1.8 C/W ELECTRICAL CHARACTERISTICS (At T. = 25C unless otherwise noted) CHARACTERISTICS SYMBOL | VSK 30100S ] VSK 3080S l VSK 3060S | VSK 3050S UNITS Maximum Instantaneous Forward T, = 25C T, = 100C T, = 150C Volts Voltage (See Fig. 1 for typ. V-) Vv i; = 30.0 Amps F 0.85 0.76 0.70 | = 60.0 Amps 1.05 0.95 0.90 Maximum Instantaneous Reverse Current at Vz (See Figure 2) Te = 26C In 10.0 mA Te = 100C 20.0 To = 150C 40.0 Typical Junction Capacitance, V_ = 10V (See Figure 4) . C, 680 pF 167TYPICAL FORWARD CHARACTERISTICS (PER DIODE) 10000 TYPICAL REVERSE CHARACTERISTICS (PER DIODE) = < | = & $ wu i 10 E = Z 1000 oa = 3 = Ww 2 100 o ra ua > a 1 a = a 5 10 < a = 1 1 2 4 6 8 10 1.2 1.4 40 50 60 70 30 100 INSTANTANEOUS FORWARD VOLTAGE - VOLTS: % of Vram FIGURE 1 FIGURE 2 APACITANCE AVERAGE CURRENT DERATING CURVE TYPICAL aad AC #000 o>) a = < EE 1/2 WAVE Z RESISTIVE LOAD ir c eo 3 a z & 1000 = So x < oO a ind < i oS OG < ra > = 50 75 100 125 150 100" 0 100 CASE TEMPERATURE, DEG. C REVERSE VOLTAGE, VOLTS FIGURE 3 FIGURE 4 168