LLDB3-LLDB3TG
150mW Bi-directional Trigger Diode
Small Signal Diode
Hermetically Sealed Glass.
All external surfaces are corrosion resistant and
terminals are readily solderable.
Min Max Min Max
Case :MINI-MELF Package 3.30 3.70 0.130 0.146
1.40 1.60 0.055 0.063
0.20 0.50 0.008 0.020
Suggested PAD Layout
Ordering Information
Package
MINI-MELF
MINI-MELF
Maximum Ratings and Electrical Characteristics
Maximum Ratings
Notes:1. Valid provided that electrodes are kept at ambient temperature
2A
MINI-MELF (LL34)
mW
C
B
°C/WRθJA
°CTJ, TSTG
Units
PDPower Dissipation
Symbol
150
Type Number Value
A
2.5K / 7" Reel
2.5K / 7" Reel
Weight : 29 ± 2.5 mg
High temperature soldering guaranteed: 260°C/10s
Rating at 25°C ambient temperature unless otherwise specified.
-40 to + 125
IFRM
Part No.
LLDB3 L1
LLDB3TG L1
400Thermal Resistance (Junction to Ambient) (Note 1)
20μsec
Repetitive Peak Forward Current
Terminal: Pure tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
Packing
Junction and Storage Temperature Range
Pulse Width=
HERMETICALLY SEALED GLASS
Features
Unit (mm) Unit (inch)
Surface device type mounting.
Dimensions
Mechanical Data
Matte Tin (Sn) Terminal Finish
Pb free version and RoHS compliant
2.00
0.079
2.50
0.098
1.25
0.049
0.197
5.00
C
B
A
Version : C10
LLDB3-LLDB3TG
150mW Bi-directional Trigger Diode
Small Signal Diode
Electrical Characteristics
Min.
Typ.
Max.
Break-over Voltage Symmetry C= 22nF + / -VBO Max.
Break-over Current C= 22nF IBO Max.
Dynamic Breakover Voltage IBO to IF=10mA ΔV Min.
VB=IBMax.
Output Voltage VOMin.
Tape & Reel specification
36 34
Type Number LLDB3TGLLDB3
+ / - 3
Break-over Voltage C= 22nF VBO 32 32
Embossment center P1 2.00 ±0.05
Overall tape thickness T 0.23±0.005
Punch hole position F 3.50 ±0.05
P0 4.00 ±0.10 Sprocke hole pitch
Feed hole width D2 13.0 ± 0.20
Sprocke hole position E 1.75 ±0.10
Reel outside diameter D 178 ± 1
Reel inner diameter D1 55 Min
1.80 ±0.10
Sprocket hole d 1.50 ± 0.10
1.83 ±0.10
Carrier length B 3.73 ±0.10
Dimension
μA10
V
15 μA100
Symbol
V
Units
+ / - 2
28 30
V
8.00 ±0.30
Reel width W1 14.4max
Leakage Current 0.5VBO (MAX)
Tape width W
Item Symbol
Carrier width A
Carrier depth C
*see diagram 1 5 V
59
Top Cover Tape
Carieer
A
n
y
Additional Label
(
If Required
)
TSC label
Direction of Feed
W1
D1D2
D
T
C
dP1
P0
A
B
F
W
E
Version : C10
LLDB3-LLDB3TG
150mW Bi-directional Trigger Diode
Small Signal Diode
Rating and Characteristic Curves
VBO :Break-Over Voltage
IBO : Break-Over Current
ΔV: Dynamic Breakover Voltage
IB: Leakage Current at VB=0.5*VBO
VF: Voltage at Current IF=10mA
0.1
1
10
100
1 10 100
tp (μs)
Repetitive peak pulse current (A)
FIG 3 Repetitive peak pulse current versus pulse
duration (maximum values)
1.00
1.01
1.02
1.03
1.04
1.05
1.06
1.07
1.08
25 50 75 100 125
VBO [Tj] / VBO [Tj=25°C]
FIG 2 Relative variation of VBO versus junction
temperature (typical values)
Tj(°C)
Diagram 1: Test Circuit
ΔV
VBO
VB=0.5*VBO
VF
IF=10m
IBO
IB
Ambient Tempeatature (oC)
FIG 1 Admissible Power Dissipation Curve
0
40
80
120
160
0 10 20 30 40 50 60 70 80 90 100 110 120 130
Power Dissipation (mW)
V
I
Version : C10
