SAMSUNG SEMICONDUCTOR INC L4e 0 ff 2ae4a42 oooes31 2 Ff MO 7-29-19 LOW FREQUENCY AMPLIFIER * Complement to KSG2785_ JTO-92S Collector-Base Voltage Vcso =-60V ABSOLUTE MAXIMUM RATINGS (Ta =25C) Characteristic Symbol Rating Unit | | Collector-Base Voltage Vcso -60 Vv ! Collector-Emitter Voltage Vceo -50 Vv . ! Emitter-Base Voltage Veeo -5 V ' Collector Current Ie - 150 t mA ? Collector Dissipation Pc 250 | mw | ; Junction Temperature Tj 150 ' C | ; Storage Temperature Tstg -55~150 | C E i . 1. Emiiter 2. Collector 3, Basa Ea j ELECTRICAL CHARACTERISTICS (Ta =25C) Characteristic Symbol Test Condition Min Typ Max Unit Collector-Base Breakdown Voltage BV cso lc =-100yA, Ie =0 ~60 : Vv Collector-Emitter Breakdown Voltage | BVceo Ic=-10mA, In =0 -50 v : Emitter-Base Breakdown Voltage BV eco le=10pA, le =0 , 5 y ov Collector Cut-off Current leno Vee = -60V, le =0 -0.1 5; pA Emitter Cut-off Current tego Ven =5V, Ig =0 -01 BA DC Current Gain Nee Voce =-6V, Ic =-1mA 40 700 Collector-Emitter Saturation Voltage Vce(sat) Ic =~100mMA, Ip =10MA -0.18 -03 Vv Base-Emitter On Voltage Vee (or) | Vce=6V, Ic=-1mA -0.50 ; ~0.62 | -0.80' V Current-Gain-Bandwidth Product fr | Vce=-6V, Ig =10mMA 50 180 : MHz ; Output Capacitance Cob ! Vca=-10V, fe =0 28! ' pF } f=iMHz Noise Figure . NF Voce =~ 6, lc =-0.3MA 6.0 20 dB f=100Hz, Rs=10KQ . hre CLASSIFICATION , Classification R 0 Vv G L Hee 40-80 | 70-140 | 120-240 | 200-400 | 350-700 cb SAMSUNG SEMICONDUCTOR. 101ee ni |SAMSUNG SEMICONDUCTOR INC KSA1175 PNP EPITAXIAL SILICON TRANSISTOR LYE D B eseuase o00b832 4 i STATIC CHARACTERISTIC : fg \ -5 ae * TE 0 -2 -4 -6 -8 - -12 -14 18 -18 20, Ves (}, COLLECTOR-EMITTER VOLTAGE DC CURRENT GAIN -01 -03-05 -! 3-5 -10 -90-80 -100 {; (mA), COLLECTOR CURRENT BASE-EMITTER SATURATION VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE - L o 1 2 Vee (nat), Vox (set) (V), SATURATION VOLTAGE 1 t Be at -03-05 -1 -3-5 -10 30-50 -100 fe (mA), COLLECTOR CURRENT Yue (V), BASE-EMITTER VOLTAGE CURRENT GAIN-BANDWIDTH PRODUCT gs 8 & 8 tr (itz), CURRENT GAIN-BANDWIDTH PRODUCT 8 ~05 -1 -3 +5 8-10 -30 ic (mA), COLLECTOR CURRENT COLLECTOR OUTPUT CAPACITANCE A 3-5-1 ~30 -50 -100 -200 Yeo (V), COLLECTOR-BASE VOLTAGE TA9-17 BASE-EMITTER ON VOLTAGE ce SAMSUNG SEMICONDUCTOR 102