1Characteristics
Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol Parameter Value Unit
VRRM Repetitive peak reverse voltage 30 V
IF(RMS) Forward rms current 10 A
IF(AV) Average forward current, δ = 0.5, square wave
SMA TL = 135 °C
1 A
SMB TL = 140 °C
IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 75 A
PARM Repetitive peak avalanche power tp = 10 µs, Tj = 125 °C 110 W
Tstg Storage temperature range -65 to +150 °C
TjMaximum operating junction temperature(1) +150 °C
1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.
Table 2. Thermal resistance parameter
Symbol Parameter Max. value Unit
Rth(j-l) Junction to lead
SMA 30
°C/W
SMB 25
For more information, please refer to the following application note :
• AN5088 : Rectifiers thermal management, handling and mounting recommendations
Table 3. Static electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
IR(1) Reverse leakage current
Tj = 25 °C
VR = VRRM
- 200 µA
Tj = 100 °C - 6 15 mA
VF(1) Forward voltage drop
Tj = 25 °C
IF = 1 A
- 0.395
V
Tj = 125 °C - 0.260 0.300
Tj = 25 °C
IF = 2 A
- 0.445
Tj = 125 °C - 0.325 0.375
1. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses, use the following equation:
P = 0.225x IF(AV) + 0.075 x IF2(RMS)
For more information, please refer to the following application notes related to the power losses :
• AN604: Calculation of conduction losses in a power rectifier
• AN4021: Calculation of reverse losses on a power diode
STPS1L30
Characteristics
DS1243 - Rev 7 page 2/12