BD241CBG - ON Semiconductor L.L.C.

3–174 Motorola Bipolar Power Transistor Device Data

Complementary Silicon Plastic

Power Transistors

. . . designed for use in general purpose amplifier and switching applications.

•Collector–Emitter Saturation Voltage —

VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc

•Collector–Emitter Sustaining Voltage —

VCEO(sus) = 80 Vdc (Min.) BD241B, BD242B

VCEO(sus) = 100 Vdc (Min.) BD241C, BD242C

•High Current Gain — Bandwidth Product

fT = 3.0 MHz (Min) @ IC = 500 mAdc

•Compact TO–220 AB Package

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎ

Symbol

ÎÎÎÎ

BD241B

BD242B

ÎÎÎÎ

BD241C

BD242C

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎ

VCEO

ÎÎÎÎ

100

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter V oltage

ÎÎÎÎ

VCES

ÎÎÎÎ

115

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎ

VEB

ÎÎÎÎÎÎÎ

5.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

Peak

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

ÎÎÎÎÎÎÎ

ÎÎÎÎÎ

ÎÎÎÎÎÎÎ

3.0

5.0

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎÎ

ÎÎÎÎÎÎÎ

1.0

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎ

Total Device Dissipation @ TC = 25

Derate above 25

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

ÎÎÎÎÎÎÎ

ÎÎÎÎÎ

ÎÎÎÎÎÎÎ

0.32

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎ

–65 to +150

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Ambient

ÎÎÎÎÎ

RθJA

ÎÎÎÎÎÎ

62.5

ÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

RθJC

ÎÎÎÎÎÎ

3.125

ÎÎÎ

C/W

00 20 40 60 80 100 120 140 160

Figure 1. Power Derating

TC, CASE TEMPERATURE (°C)

PD, POWER DISSIPATION (WATTS)

Preferred devices are Motorola recommended choices for future use and best overall value.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

BD241B

BD241C

BD242B

BD242C

3 AMPERE

POWER TRANSISTORS

COMPLEMENTARY

SILICON

80, 100 VOLTS

40 WATTS

*Motorola Preferred Device

CASE 221A–06

TO–220AB

NPN

PNP

REV 7

BD241B BD241C BD242B BD242C

3–175

Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min.

ÎÎÎÎ

Max.

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining V oltage 1

(IC = 30 mAdc, IB = 0) BD241B, BD242B

BD241C, BD242C

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

VCEO

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

100

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 60 Vdc, IB = 0) BD241B, BD241C, BD242B, BD242C

ÎÎÎÎ

ICEO

ÎÎÎÎ

0.3

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 80 Vdc, VEB = 0) BD241B, BD242B

(VCE = 100 Vdc, VEB = 0) BD241C, BD242C

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

ICES

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

200

ÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

1.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS1

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 1.0 Adc, VCE = 4.0 Vdc)

(IC = 3.0 Adc, VCE = 4.0 Vdc)

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

hFE

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation V oltage

(IC = 3.0 Adc, IB = 600 Adc)

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

1.2

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage

(IC = 3.0 Adc, VCE = 4.0 Vdc)

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

VBE(on)

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

1.8

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current Gain – Bandwidth Product2

(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1 MHz)

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

3.0

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

ÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small–Signal Current Gain

(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 kHz)

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

hfe

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

ÎÎÎ

1Pulse Test: Pulse Width

300 µs, Duty Cycle

2.0%.

2fT = |hfe| • ftest.

2.0

0.03 IC, COLLECTOR CURRENT (AMP)

t, TIME ( s)µ

1.0

0.7

0.5

0.3

0.1

0.07

0.02 0.05 0.1 0.3 0.5 0.7 1.0 3.0

td @ VBE(off) = 2.0 V

IC/IB = 10

TJ = 25°C

tr @ VCC = 30 V

tr @ VCC = 10 V

0.07

0.03

0.05

Figure 2. Switching Time Equivalent Circuit Figure 3. Turn–On Time

APPROX

+ 11 V

TURN-ON PULSE

Vin 0

VEB(off)

APPROX – 9.0 V

TURN-OFF PULSE

Vin

APPROX

+ 11 V

VCC

SCOPE

Cjd

Ceb

– 4.0 V

7.0 ns

100

500 µs

15 ns

DUTY CYCLE

[

2.0%

Vin

BD241B BD241C BD242B BD242C

3–176 Motorola Bipolar Power Transistor Device Data

Figure 4. Thermal Response

t, TIME (ms)

1.0

0.01

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1.0 k500

ZθJC (t) = r(t) RθJC

RθJC = 3.125°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk) ZθJC(t)

P(pk)

t1t2

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

0.02

0.01 SINGLE PULSE

0.1

r(t), TRANSIENT THERMAL RESISTANCE

(NORMALIZED)

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

SECOND BREAKDOWN

LIMITED @ TJ

150°C

THERMAL LIMITATION @ TC = 25°C

BONDING WIRE LIMITED

CURVES APPLY BELOW

RATED VCEO

5.0

Figure 5. Active Region Safe Operating Area

IC, COLLECTOR CURRENT (AMP)

5.0

1.0

0.1 10 20 50 100

BD241B, BD242B

BD241C, BD242C

5.0 ms 100 µs

1.0 ms

0.2

2.0

0.5

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation,

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 150

C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

150

C, TJ(pk) may be calculated from the data in Fig-

ure 4. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

3.0

0.03

Figure 6. Turn–Off Time

IC, COLLECTOR CURRENT (AMP)

tf @ VCC = 30 V

t, TIME ( s)µ

2.0

1.0

0.5

0.3

0.2

0.1

0.05

0.03 0.05 0.07 0.1 0.2 0.5 1.0 2.0 3.0

tf @ VCC = 10 V

IB1 = IB2

IC/IB = 10

ts′ = ts – 1/8 tf

TJ = 25°C

ts′

0.3 0.7

0.07

0.7

300

0.1

Figure 7. Capacitance

VR, REVERSE VOLT AGE (VOLTS)

30 1.0 2.0 3.0 5.0 20 30 40100.2 0.3 0.5

CAPACIT ANCE (pF)

200

100

TJ = + 25°C

Ceb

Ccb

BD241B BD241C BD242B BD242C

3–177

Motorola Bipolar Power Transistor Device Data

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

500

0.03

5.0 0.05 0.07 0.1 0.3 0.5 1.0 3.0

100

300

TJ = 150°C

25°C

–55°C

VCE = 2.0 V

0.7

7.0

Figure 8. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

1.4

0.003

Figure 9. Collector Saturation Region

IC, COLLECTOR CURRENT (AMPS)

0.01 0.020.03 0.1 0.2 0.5 1.0 2.0 3.0

0.8

0.6

0.4

0.2

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

V, VOLTAGE (VOLTS)

2.0

1.0

Figure 10. “On” Voltages

IB, BASE CURRENT (mA)

02.0 5.0 10 20 50 100 200 500 100

1.6

1.2

0.8

0.4

IC = 0.3 A

TJ = 25°C

1.0 A 3.0 A

URREN

GAIN

+2.5

0.003

Figure 11. Temperature Coefficients

IC, COLLECTOR CURRENT (AMP)

0.01 0.02 0.05 0.1 0.20.3 1.0 2.0 3.0

V, TEMPERA TURE COEFFICIENTS (mV/ C)°θ

+2.0

+1.5

+0.5

–0.5

–1.0

–1.5

–2.0

–2.5

θVB FOR VBE

*θVC FOR VCE(sat)

*APPLIES FOR IC/IB ≤5.0

TJ = – 65°C TO + 150°C

103

–0.4

Figure 12. Collector Cut–Off Region

VBE, BASE–EMITTER VOLTAGE (VOLTS)

102

101

100

10–1

OLLE

URREN

)

µIC

10–2

10–3 –0.3 –0.2 –0.1 0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6

VCE = 30 V

TJ = 150°C

100°C

25°C

REVERSE FORWARD

ICES

107

Figure 13. Effects of Base–Emitter Resistance

TJ, JUNCTION TEMPERATURE (°C)

20 40 60 80 100 120 140 160

106

105

104

103

102

RBE, EXTERNAL BASE–EMITTER RESISTANCE (OHMS)

VCE = 30 V

IC = 10 x ICES

IC ≈ICES

(TYPICAL ICES VALUES

OBTAINED FROM FIGURE 12)

0.005 0.30.05

1.2

1.0

VBE @ VCE = 2.0 V

+1.0

0.50.005

IC = 2 x ICES

2–3

Selector Guide

Motorola Bipolar Power Transistor Device Data

Table 1. Plastic (Isolated TO–220 Type)

Device Type Resistive Switching

ICCont

Amps

Max

VCEO(sus)

Volts

Min

VCES

Volts

Min NPN PNP hFE

Min/Max @ IC

Amp

µs

Max

µs

Max @ IC

Amp

MHz

Min

PD (Case)

Watts

@ 25°C

1 250

MJF47

30/150 0.3 2 typ 0.17 typ 0.3 10 28

2 400 700

BUL44F

14/34 0.2 2.75(3) 0.2(3) 1 13 typ 25

1000

MJF18002

14/34 0.2 2.75(3) 0.175(3) 1 13 typ 25

3 100

MJF31C MJF32C

10 min 1 0.6 0.3 1 3 28

5100

MJF122

(2)

MJF127

(2) 2000 min 3 1.5 typ 1.5 typ 3 4(1) 28

400 700

BUL45F

14/34 0.3 1.7(3) 0.15(3) 1 12 typ 35

450 1000

BUT11AF

10 min .005 4 0.8 2.5 40

1000

MJF18004

14/34 0.3 1.7(3) 0.15(3) 1 13 typ 35

550 1200

MJF18204

18/35 0.5 2.75(3) 0.2(3) 2 12 35

6 400 700

BUL146F

14/34 0.5 2.5(3) 0.15(3) 3 14 typ 40

450 1000

MJF18006

14/34 0.5 3.2(3) 0.15(3) 3 14 typ 40

880

MJF6107

30/90 2 0.5 typ 0.13 typ 2 4 35

150

MJF15030 MJF15031

40 min 3 1 typ 0.15 typ 3 30 35

400 700

MJF13007

5/30 5 3 0.7 5 4 40

BUL147F

14/34 1 2.5(3) 0.18(3) 2 14 typ 45

450 1000

MJF18008

16/34 1 2.75(3) 0.18(3) 2 13 typ 45

10 60

MJF3055 MJF2955

20/100 4 — — — 2 40

MJF44H11 MJF45H11

40/100 4 0.5 typ 0.14 typ 5 40 35

100

MJF6388

(2)

MJF6668

(2) 3k/20k 3 1.5 typ 1.5 typ 20(1) 40

450 1000

MJF18009

14/34 1.5 2.75(3) 0.2(3) 3 12 50

12 400 700

MJF13009

6/30 8 3 0.7 8 8 40

(1)|hFE| @ 1 MHz

(2)Darlington

(3)Switching tests performed w/special application simulator circuit. See data sheet for details.

Devices listed in bold, italic are Motorola preferred devices.

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

CASE 221D

Isolated TO–220 Type

UL Recognized

File #E69369

Selector Guide

2–4 Motorola Bipolar Power Transistor Device Data

Table 2. Plastic TO–220AB

Device Type Resistive Switching

ICCont

Amps

Max

VCEO(sus)

Volts

Min(8) NPN PNP hFE

Min/Max @ IC

Amp

µs

Max

µs

Max @ IC

Amp

MHz

Min

(Case)

Watts

@ 25°C

0.5 350 MJE2360T 15 min 0.1 10 typ 30

MJE2361T

40 min 0.1 10 typ 30

1 100 TIP29C TIP30C 15/75 1 0.6 typ 0.3 typ 1 3 30

250 TIP47 30/150 0.3 2 typ 0.18 typ 0.3 10 40

300 TIP48 MJE5730 30/150 0.3 2 typ 0.18 typ 0.3 10 40

350

TIP49 MJE5731

30/150 0.3 2 typ 0.18 typ 0.3 10 40

400

TIP50 MJE5731A

(7) 30/150 0.3 2 typ 0.18 typ 0.3 10 40

2 100

TIP112

(2)

TIP117

(2) 500 min 2 1.7 typ 1.3 typ 2 25(1) 50

400/700

BUL44

14/36 0.4 2.75(3) 0.175(3) 1 13 typ 50

450/1000

BUX85

30 0.1 3.5 1.4 1 4 50

450/1000

MJE18002

14/34 0.2 3(3) 0.17(3) 1 12 typ 40

900/1800

MJE1320

3 min 1 4 typ 0.8 typ 1 80

3 80 BD241B BD242B 25 min 1 3 40

100 BD241C BD242C 25 min 1 3 40

TIP31C TIP32C

25 min 1 0.6 typ 0.3 typ 1 3 40

150

MJE9780

50/200 0.5 5 typ 40

(1)|hFE| @ 1 MHz

(2)Darlington

(3)Switching tests performed w/special application simulator circuit. See data sheet for details.

(7)VCEO = 375 V

(8)When 2 voltages are given, the format is VCEO(sus)/VCES.

Devices listed in bold, italic are Motorola preferred devices.

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

CASE 221A–06

(TO–220AB)

123

2–5

Selector Guide

Motorola Bipolar Power Transistor Device Data

Table 2. Plastic TO–220AB (continued)

ICCont

Amps

Max

(Case)

Watts

@ 25°C

MHz

Min

Resistive Switching

@ IC

Amp

hFE

Min/Max

Device Type

VCEO(sus)

Volts

Min(8)

ICCont

Amps

Max

(Case)

Watts

@ 25°C

MHz

Min

@ IC

Amp

µs

Max

µs

Max

@ IC

Amp

hFE

Min/Max

PNPNPN

VCEO(sus)

Volts

Min(8)

4 40

MJE1123

45/100 4 5 75

MJE800

(2)

MJE700

(2) 750 min 1.5 1(1) 40

D44C12 D45C12

40/120 0.2 1 40 typ 30

400/700

MJE13005

6/30 3 3 0.7 3 4 60

5 100

TIP122

(2)

TIP127

(2) 1k min 3 1.5 typ 1.5 typ 4 4(1) 75

250 2N6497 10/75 2.5 1.8 0.8 2.5 5 80

300

2N6498

10/75 2.5 1.8 0.8 2.5 5 80

400/700

BUL45

14/34 0.3 1.7(3) 0.15(3) 1 12 typ 75

450/1000 MJE16002 5 min 5 3 0.3 3 80

450/850

MJE16004

7 min 5 2.7 0.35 3 80

450/1000

MJE18004

14/34 0.3 1.7 0.15 1.0 13 75

550/1200

MJE18204

18/35 0.5 2.75(3) 0.2(3) 2 12 75

6 80

BD243B BD244B

15 min 3 0.4 typ 0.15 typ 3 3 65

100

BD243C BD244C

15 min 30.4 typ 0.15 typ 3 3 65

TIP41C TIP42C

15/75 3 0.4 typ 0.15 typ 3 3 65

250/550

MJE16204

5 min 6 1.5(2) 0.15(2) 1 10 80

400/700

BUL146

14/34 0.5 1.75(3) 0.15(3) 3 14 typ 100

450/1000

MJE18006

14/34 0.5 3.2(3) 0.13(3) 3 14 typ 100

730 2N6288 2N6111 30/150 3 0.4 typ 0.15 typ 3 4 40

50 2N6109 30/150 2.5 0.4 typ 0.15 typ 3 4 40

2N6292 2N6107

30/150 2 0.4 typ 0.15 typ 3 4 40

100

BD801 BD802

15 min 3 3 65

150 BU407 30 min 1.5 0.75 5 10 60

200

BU406

30 min 1.5 0.75 5 10 60

450

BU522B

(2) 250 min 2.5 7.5 75

(1)|hFE| @ 1 MHz

(2)Darlington

(3)Switching tests performed w/special application simulator circuit. See data sheet for details.

(7)VCEO = 375 V

(8)When 2 voltages are given, the format is VCEO(sus)/VCES.

Devices listed in bold, italic are Motorola preferred devices.

Selector Guide

2–6 Motorola Bipolar Power Transistor Device Data

Table 2. Plastic TO–220AB (continued)

ICCont

Amps

Max

(Case)

Watts

@ 25°C

MHz

Min

Resistive Switching

@ IC

Amp

hFE

Min/Max

Device Type

VCEO(sus)

Volts

Min(8)

ICCont

Amps

Max

(Case)

Watts

@ 25°C

MHz

Min

@ IC

Amp

µs

Max

µs

Max

@ IC

Amp

hFE

Min/Max

PNPNPN

VCEO(sus)

Volts

Min(8)

8 60 2N6043(2) 2N6040(2) 1k/10k 4 1.5 typ 1.5 typ 3 4(1) 75

2N6044

(2)

2N6041

(2) 1k/10k 4 1.5 typ 1.5 typ 3 4(1) 75

BDX53B

(2)

BDX54B

(2) 750 min 3 4(1) 60

100

2N6045

(2)

2N6042

(2) 1k/10k 3 1.5 typ 1.5 typ 3 4(1) 75

BDX53C

(2)

BDX54C

(2) 750 min 3

TIP102

(2)

TIP107

(2) 1k/20k 3 1.5 typ 1.5 typ 3 4(1) 80

120 MJE15028 MJE15029 20 min 4 30 50

150

MJE15030 MJE15031

20 min 4 30 50

200

BU806

(2) 100 min 5 0.55 typ 0.2 typ 5 60

300/600 MJE5740(2) 200 min 4 8 typ 2 typ 6 4 80

MJE5850 15 min 2 2 0.5 4 80

350

MJE5741

(2) 200 min 4 8 typ 2 typ 6 80

MJE5851

15 min 2 2 0.5 4 80

MJE5742

(2) 200 min 4 8 typ 2 typ 6 80

MJE13007

5/30 5 3 0.7 5 80

MJE5852

15 min 2 2 0.5 4 80

400/650

MJE16106

6/22 8 2 typ 0.1 typ 5 100

400/700

BUL147

14/34 1 2.5(3) 0.18(3) 2 14 typ 125

450/1000

MJE18008

16/34 1 2.75(3) 0.18(3) 2 13 typ 125

10 20

BD808

15 min 4 1.5 90

60 D44H8 D45H8 40 min 4 50

MJE3055T MJE2955T

20/70 4 75

2N6387

(2)

2N6667

(2) 1k/20k 5 20(1) 65

BDX33B

(2)

BDX34B

(2) 750 min 3 3 70

BD809 BD810

15 min 4 1.5 90

2N6388

(2)

2N6668

(2) 1k/20k 5 20(1) 65

D44H10 D45H10 20 min 4 0.5 typ 0.14 typ 5 50 typ 50

D44H11 D45H11

40 min 4 0.5 typ 0.14 typ 5 50 typ 50

(1)|hFE| @ 1 MHz

(2)Darlington

(3)Switching tests performed w/special application simulator circuit. See data sheet for details.

(7)VCEO = 375 V

(8)When 2 voltages are given, the format is VCEO(sus)/VCES.

(9)Self protected Darlington

Devices listed in bold, italic are Motorola preferred devices.

2–7

Selector Guide

Motorola Bipolar Power Transistor Device Data

Table 2. Plastic TO–220AB (continued)

ICCont

Amps

Max

(Case)

Watts

@ 25°C

MHz

Min

Resistive Switching

@ IC

Amp

hFE

Min/Max

Device Type

VCEO(sus)

Volts

Min(8)

ICCont

Amps

Max

(Case)

Watts

@ 25°C

MHz

Min

@ IC

Amp

µs

Max

µs

Max

@ IC

Amp

hFE

Min/Max

PNPNPN

VCEO(sus)

Volts

Min(8)

10 100

BDX33C

(2)

BDX34C

(2) 750 min 3 3 70

450/1000

MJE18009

14/34 1.5 2.75(3) 0.2(3) 3 12 150

12 400/700

MJE13009

6/30 8 3 0.7 8 4 100

15 80

2N6488 2N6491

20/150 5 0.6 typ 0.3 typ 5 5 75

D44VH10 D45VH10

20 min 4 0.5 0.09 8 50 typ 83

100

BDW42

(2)

BDW47

(2) 1k min 5 1 typ 1.5 typ 5 4 85

Table 3. Plastic TO–218 Type

Device Type Resistive Switching

ICCont

Amps

Max

VCEO(sus)

Volts

Min(8) NPN PNP hFE

Min/Max @ IC

Amp

µs

Max

µs

Max @ IC

Amp

MHz

Min

(Case)

Watts

@ 25°C

8 500/1000

MJH16006A

5 min 8 2.5 0.25 5 125

10 60 TIP140(2) TIP145(2) 500 min 10 2.5 typ 2.5 typ 5 4(1) 125

TIP141(2) TIP146(2) 500 min 10 2.5 typ 2.5 typ 5 4(1) 125

100

BDV65B

(2)

BDV64B

(2) 1k min 5 125

TIP33C TIP34C 20/100 3 3 80

TIP142

(2)

TIP147

(2) 500 min 10 2.5 typ 2.5 typ 5 4(1) 125

400

BU323AP

(2) 150/100 6 15 15 6 125

MJH10012

(2) 100/2k 6 15 15 6 118

(1)|hFE| @ 1 MHz

(2)Darlington

(8)When 2 voltages are given, the format is VCEO(sus)/VCES.

Devices listed in bold, italic are Motorola preferred devices.

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

CASE 340D

(TO–218 Type,

SOT–93)

Selector Guide

2–8 Motorola Bipolar Power Transistor Device Data

Table 3. Plastic TO–218 Type (continued)

ICCont

Amps

Max

(Case)

Watts

@ 25°C

MHz

Min

Resistive Switching

@ IC

Amp

hFE

Min/Max

Device Type

VCEO(sus)

Volts

Min(8)

ICCont

Amps

Max

(Case)

Watts

@ 25°C

MHz

Min

@ IC

Amp

µs

Max

µs

Max

@ IC

Amp

hFE

Min/Max

PNPNPN

VCEO(sus)

Volts

Min(8)

15 60

TIP3055 TIP2955

5 min 10 2.5 80

150 MJH11018(2) MJH11017(2) 400/15k 10 3 150

200 MJH11020(2) MJH11019(2) 400/15k 10 3 150

250

MJH11022

(2)

MJH11021

(2) 400/15k 10 3 150

400 BUV48 8 min 10 2 0.4 10 150

450

BUV48A

8 min 8 2 0.4 10 150

16 140 MJE4342 MJE4352 15 min 8 1.2 typ 1.2 typ 8 1 125

160

MJE4343 MJE4353

15 min 8 1.2 typ 1.2 typ 8 1 125

20 60 MJH6282(2) MJH6285(2) 750/18k 10 4 125

100

MJH6284

(2)

MJH6287

(2) 750/18k 10 4 125

25 80 TIP35A TIP36A 15/75 15 0.6 typ 0.3 typ 10 3 125

100

BD249C BD250C

10 min 15 3 125

TIP35C TIP36C

15/75 15 0.6 typ 0.3 typ 10 3 125

(2)Darlington

(8)When 2 voltages are given, the format is VCEO(sus)/VCES.

Table 4. Isolated Mounting Hole — Plastic TO–247 Type

Device Type Resistive Switching

ICCont

Amps

Max

VCEO(sus)

Volts

Min

VCES

Volts

Min NPN PNP hFE

Min/Max @ IC

Amp

µs

Max

µs

Max @ IC

Amp

MHz

Min

(Case)

Watts

@ 25°C

10 650 1500

MJW16212

4/10 10 4(3) 0.5(3) 5.5 150

800 1500

MJW16018

4 min 5 4.5 typ 0.2 typ 5 3 typ 150

12 500 1200

MJW16206

5/13 10 2.25 0.25 6.5 3 typ 150

15 450 850

MJW16010

5 min 15 1.2 typ 0.2 typ 10 150

850

MJW16012

7 min 15 0.9 typ 0.15 typ 10 150

500 1000

MJW16010A

5 min 15 3 0.4 10 150

(3)Switching tests performed w/special application simulator circuit. See data sheet for details.

(10)Tested in Applications simulator: see Data Sheet.

Devices listed in bold, italic are Motorola preferred devices.

STYLE 2:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

CASE 340F

(TO–247 Type)

2–9

Selector Guide

Motorola Bipolar Power Transistor Device Data

New Product New Product New Product New Product

Table 5. Large Plastic TO–264

Device Type Resistive Switching

ICCont

Amps

Max

VCEO(sus)

Volts

Min NPN PNP hFE

Min/Max @ IC

Amp

µs

Max

µs

Max @ IC

Amp

MHz

Min

(Case)

Watts

@ 25°C

15 200

MJL3281A MJL1302A

60/175 0.1 30 typ 200

650/1500

MJL16218

4/11 12 2.5 typ 170

16 250

MJL21194 MJL21193

25/75 8 4 200

New Product New Product New Product New Product

Table 6. Plastic TO–225AA Type (Formerly TO–126 Type)

Device Type Resistive Switching

ICCont

Amps

Max

VCEO(sus)

Volts

Min NPN PNP hFE

Min/Max @ IC

Amp

µs

Max

µs

Max @ IC

Amp

MHz

Min

(Case)

Watts

@ 25°C

0.3 350

MJE3439

40/160 0.02 15 15

0.5 150 MJE341 25/200 0.05 15 20.8

200

MJE344

30/300 0.05 15 20.8

250 2N5655 30/250 0.1 3.5 typ 0.24 typ 0.1 10 20

BD157 30/240 0.05 20

300

BD158

30/240 0.05 20

MJE340 MJE350

30/240 0.05 20.8

2N5656 30/250 0.1 3.5 typ 0.24 typ 0.1 10 20

Devices listed in bold, italic are Motorola preferred devices.

STYLE 2:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

CASE 340G

(TO–264)

STYLE 1:

PIN 1. EMITTER

2. COLLECTOR

3. BASE

CASE 77

(TO–225AA)

STYLE 3:

PIN 1. BASE

2. COLLECTOR

3. EMITTER