POWERDI is a registered trademark of Diode s In cor po rat ed .
DXT790AP5
Document number: DS31800 Rev. 3 - 2 1 of 7
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© Diodes Incorporated
DXT790AP5
A Product Line of
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40V PNP HIGH GAIN TRANSISTOR
POWERDI®
Features
• BVCEO > -40V
• IC = -3A high Continuous Collector Current
• ICM = -6A Pe ak Pulse Current
• 43% smaller than SOT223; 60% smaller than TO252
• Maximum Height Just 1. 1mm
• Rated up to 3.2W
• Low Saturation, High Gain Transistor,
• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
• Halogen and Antimon y Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standard s for High Reli ability
Mechanical Data
• Case: POWERDI5
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammabilit y Classification Rating 94V-0
• Moisture Sensitivi t y: Level 1 per J-STD-020
• Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.093 grams (approximate)
Ordering Information (Note 4)
Product Marking Reel size (inch es) Tape width (mm) Quantity per reel
DXT790AP5-13
DXT790A
13
16
5,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead -free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
Top View Bottom View Device Schematic Top View
Pin Out
DXT790A = Product Type Marking Code
= Manufacturers’ Code Marking
K = Factory Designator
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 09 for 2009)
WW = Week code (01 to 53)
POWERDI5
e3
POWERDI is a registered trademark of Diode s In cor po rat ed .
DXT790AP5
Document number: DS31800 Rev. 3 - 2 2 of 7
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© Diodes Incorporated
DXT790AP5
A Product Line of
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Maximum Ratings (@TA = +25°C, unless otherwise specifi ed. )
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
-50 V
Collector-Emitter Voltage V
CEO
-40 V
Emitter-Base Voltage V
EBO
-6 V
Continuous Coll ect or Current IC -3 A
Peak Pulse Current ICM -6 A
Base Current IB -0.5 A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 5) PD 3.2 W
(Note 6) 1.7
(Note 7) 0.74
Thermal Resistance, Junction to Ambient Air
(Note 5)
RθJA
39
°C/W
(Note 6)
75
(Note 7) 169
Thermal Resistance, Junction to Lead (Note 8) R
θJL
8.9 °C/W
Operating and Storage Tem perature Range TJ, TSTG -55 to +150 °C
Notes: 5. For a device mounted with the exposed collector pad on 50mm x 50mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured
under still air conditions whilst operating in a steady-state.
6. Same as not e (5), except the device is mounted on 25mm x 25mm 1oz copper.
7. Same as note (5), except the device is mounted on minimum recommended pad (MRP) layout 1oz copper.
8. Thermal resistance from junction to solder-point (on the exposed collector pad).
POWERDI is a registered trademark of Diode s In cor po rat ed .
DXT790AP5
Document number: DS31800 Rev. 3 - 2 3 of 7
www.diodes.com June 2013
© Diodes Incorporated
DXT790AP5
A Product Line of
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Thermal Characteristics and Derating Information
10 100 1000 10000
20
40
60
80
100
120
140
160
180
10 100 1000 10000
0
1
2
3
4
100m 110
10m
100m
1
10
Single Pulse. T
A
=25°C
50mm X 50mm 2oz Cu
V
CE(sat)
Limited
100µs
1ms
10ms
100ms
1s
DC
Safe O perating A rea
-IC Collector Current (A )
-VCE Collector-Emitter Voltage (V)
025 50 75 100 125 150 175
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
MRP 1oz
25mm X 25mm 1oz Cu
50mm X 50mm 2oz Cu
Derating Curve
Ambient Temperature (°C)
M ax Pow er Dissipation (W )
100µ 1m 10m 100m 110 100 1k
0
10
20
30
40
Power Rating vs. Cu Area
Therm al Resistance v s. Cu Area
50mm X 50mm 2oz Cu
Transient Therm al Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Therm al Resistance (°C/W )
Pulse Width (s)
100µ 1m 10m 100m 110 100 1k
1
10
100
Single Pulse. T
A
=25°C
50mm X 50mm 2oz Cu
Pu lse P ower Dissip ation
Pulse Width (s)
M ax Pow er Dissipation (W )
2 oz Cu
T
A
=25°C
Copper Area (sq mm)
Therm al Resistance (°C/W )
1 oz Cu 1 oz Cu
2 oz Cu
P ower Rating (W )
Copper Area (sq mm)
T
A
=25°C
POWERDI is a registered trademark of Diode s In cor po rat ed .
DXT790AP5
Document number: DS31800 Rev. 3 - 2 4 of 7
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© Diodes Incorporated
DXT790AP5
A Product Line of
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Electrical Characteristics (@TA = +25°C, unless otherwise specifi ed. )
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CH ARACTERISTICS
Collector-Base Breakdown Voltage BVCBO -50 V IC = -100µA, IE = 0
Collector-Emitter Breakdown Voltage (Note 8) BV
CEO
-40 V I
C
= -10mA, I
B
= 0
Emitter-Base Breakdown Voltage BV
EBO
-6 V I
E
= -100µA, I
C
= 0
Collector Cutoff Current I
CBO
-20 nA V
CB
= -30V, I
E
= 0
Collector Cutoff Current I
CES
-20 nA V
CB
= -30V, V
BE
= 0
Emitter Cutoff Current I
EBO
-20 nA V
EB
= -4V, I
C
= 0
ON CHARACTERISTI CS (Note 8)
Collector-Emitter Saturation Voltage VCE(sat)
-170
-350
-450
-450
mV
IC = -0.5A, IB = -5mA
IC = -1A, IB = -10mA
IC = -2A, IB = -50mA
IC = -3A, IB = -300mA
Base-Emitter Saturation Voltage VBE(sat) -1.15 V IC = -3A, IB = -300mA
Base-Emitt er T urn-On Voltage VBE(on) -1.0 V IC = -3A, VCE = -2V
DC Current Gain hFE
300
250
200
150
80
800
IC = -10mA, VCE = -2V
IC = -500mA, VCE = -2V
IC = -1A, VCE = -2V
IC = -2A, VCE = -2V
I
C
= -3A, V
CE
= -2V
AC C HARACT ERISTICS
Transiti on Frequency fT 100 MHz IC = -50mA, VCE = -5V,
f = 50MHz
Output Capacitance
Cobo
24 pF
VCB = -10V, f = 1MHz
Switching Times ton
t
off
35
600
ns
ns IC = -500mA, VCC = -10V,
I
B1
= -I
B2
= -50mA
Notes: 8. Measur ed un der pulsed c on diti o ns. P ulse widt h • 300µs. D uty cycle • 2%.
POWERDI is a registered trademark of Diode s In cor po rat ed .
DXT790AP5
Document number: DS31800 Rev. 3 - 2 5 of 7
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© Diodes Incorporated
DXT790AP5
A Product Line of
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Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
1m 10m 100m 110
10m
100m
1
1m 10m 100m 1
0.0
0.2
0.4
0.6
0.8
1.0
1m 10m 100m 110
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1m 10m 100m 110
0.4
0.6
0.8
1.0
1m 10m 100m 110
0.2
0.4
0.6
0.8
1.0
0
90
180
270
360
450
540
630
VCE(SAT) v IC
Tamb=25°C
I
C
/I
B
=100
I
C
/I
B
=40
I
C
/I
B
=10
-VCE(SAT) (V)
-IC Collector Cu rrent (A)
VBE(SAT) v IC
I
C
/I
B
=100
100°C
25°C
-55°C
-VCE(SAT) (V)
-IC Collector Cu rrent (A)
hFE v IC
V
CE
=-2V
-55°C
25°C
100°C
Norm alised Gain
-IC Collector Cu rrent (A)
IC/IB=100
25°C
V
CE(SAT) v IC
100°C
-55°C
-VBE(SAT) (V)
-IC Collector Cu rrent (A)
VBE(ON) v IC
V
CE
=-2V
100°C
25°C
-55°C
-VBE(ON) (V)
-IC Collector Cu rrent (A)
Typical G ain (hFE)
POWERDI is a registered trademark of Diode s In cor po rat ed .
DXT790AP5
Document number: DS31800 Rev. 3 - 2 6 of 7
www.diodes.com June 2013
© Diodes Incorporated
DXT790AP5
A Product Line of
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Package Ou t lin e Dim en sio ns
Please see AP02002 at http://www.diodes.c om/datasheets/ap02002.pdf for latest versi on.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.c om/datasheets/ap02001.pdf for the latest version.
POWERDI5
Dim
Min
Max
A 1.05 1.15
A2 0.33 0.43
b1
0.80 0.99
b2 1.70 1.88
D
3.90
4.05
D2 3.054 Typ
E
6.40
6.60
e 1.84 Typ
E1 5.30 5.45
E2
3.549 Typ
L 0.75 0.95
L1 0.50 0.65
W
1.10 1.41
All Dimensions in mm
Dimensions
Value (in mm)
C
1.840
G
0.852
X
3.360
X1
1.390
Y 4.860
Y1 1.400
EE1
b1
A
A2
A2
D
b2
b1
e
D2
L
E2
L1
W
G
X
C
Y1
(2x)
Y
X1
(2x)
POWERDI is a registered trademark of Diode s In cor po rat ed .
DXT790AP5
Document number: DS31800 Rev. 3 - 2 7 of 7
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© Diodes Incorporated
DXT790AP5
A Product Line of
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final and determinative f orm at released by Diodes I ncorporat ed.
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1. are intended to implant into the body, or
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labeling can be reasonably expect ed to result in signifi c ant i njury to the user.
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Customers represent that they have all necessary expertise i n the safety and regulatory ramif ications of their l ife support devices or systems, and
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