SGS-THOMSON SG S-THOMSON S47. iiCROELECTRONTICS BUZ11 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM 30E D Mm 75e4237 0030116 4 VBA - _ e DIE SIZE: 170x170 mils METALLIZATION: SCHEMATIC DIAGRAM o Top Al Back Au/Cr/Ni/Au BACKSIDE THICKNESS: 6100 A 8 DIE THICKNESS: 16 + 2 mils ~ * PASSIVATION: P-Vapox s BONDING PAD SIZE: Source 47x51 mils V R in* Gate 15x18 mils Dss DS (on) D * RECOMMENDED WIRE BONDING: 50 V 0.04 2 30 A Source Al - max 20 mils Gate Al- max 5 mils N-channel enhancement mode POWER MOS field effect transistor. Easy drive and very fast switching times make this POWER MOS ideal for high speed switching applications. Die geometry MC-0075 _ , a El ~SOURCE HM Gare Drain on backside * With Rinte max. 1.67CAV June 1988 1/2 639suziicHp 4. SOE D MM 7929237 0030009 b mm SG S-THOMSON GUARANTEED PROBED ELECTRICAL CHARACTERISTICS (T;= 25C, Note 1) Parameters Test Conditions - | Min. | Typ. | Max. | Unit Ver) pss Fee I Ip= 250 nA Ves= o | _50- | | . Vv reakdown voltage S T-39-11 Ipss Zero gate voltage Vps= Max Rating 250 | pA drain current Vpg= Max Rating x 0.8 Tj= 125C 1000 | pA lass Gate-body leakage Ves = +20 V 100 | nA current . Vas (thy Gate threshold Vos = Vas Ip=imA 2.1 4 Vv voltage Ros (on) Static drain-source Vag= 10 V ID=aiA 0.04] Q on resistance NOTES: 1 - Due to probe testing limitations de parameters only are tested. They are measured using pulse techni- ques: pulse width <300 ys, duty cycle <2% 2 - For detailed device characteristics please refer to the discrete device datasheet 2/2 ST. SGS-THOMSON re BESRCSLESTE CAS 640