APTGT150A120T3AG P Phase leg Trench + Field Stop IGBT Power Module 29 30 31 32 VCES = 1200V IC = 150A @ Tc = 100C Application 13 * * * * 4 3 Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features 26 27 28 22 23 25 R1 * 8 7 16 28 27 26 25 18 19 20 14 * * * * * 20 19 18 23 22 29 16 30 15 31 14 32 Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated Very low stray inductance Kelvin emitter for easy drive Internal thermistor for temperature monitoring High level of integration AlN substrate for improved thermal performance Benefits 13 2 3 4 7 8 10 11 12 Pins 29/30/31/32 must be shorted together Pins 26/27/28/22/23/25 must be shorted together to achieve a phase leg Pins 16/18/19/20 must be shorted together * * * * * Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant Absolute maximum ratings IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation RBSOA TC = 25C TC = 100C TC = 25C TC = 25C Reverse Bias Safe Operating Area Tj = 125C Max ratings 1200 220 150 300 20 833 Unit V July, 2008 Parameter Collector - Emitter Breakdown Voltage A V W 300A @ 1150V These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGT150A120T3AG - Rev 0 Symbol VCES APTGT150A120T3AG All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions Min VGE = 0V, VCE = 1200V Tj = 25C VGE = 15V IC = 150A Tj = 125C VGE = VCE , IC = 3 mA VGE = 20V, VCE = 0V 5.0 Typ 1.7 2.0 5.8 Max Unit 250 2.1 A 6.5 400 V nA Max Unit V Dynamic Characteristics Symbol Cies Coes Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE= 15V ; VCE=600V IC=150A Inductive Switching (25C) VGE = 15V VBus = 600V IC = 150A RG = 2.2 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 150A RG = 2.2 VGE = 15V Tj = 125C VBus = 600V IC = 150A Tj = 125C RG = 2.2 VGE 15V ; VBus = 900V tp 10s ; Tj = 125C Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Isc Short Circuit data Min Typ 10.7 0.56 0.48 nF 1.4 C 280 40 420 ns 75 290 45 520 ns 90 14 mJ 16 600 A Reverse diode ratings and characteristics IF Maximum Reverse Leakage Current VR=1200V DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Er Reverse Recovery Energy Min 1200 Tj = 25C Tj = 125C IF = 150A VR = 600V di/dt =2500A/s www.microsemi.com Max 350 600 Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C 150 1.6 1.6 170 280 14 Tj = 125C Tj = 25C Tj = 125C 28 6 11 Tc = 100C IF = 150A VGE = 0V Typ Unit V A A 2.1 V July, 2008 IRM Test Conditions ns C mJ 2-5 APTGT150A120T3AG - Rev 0 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APTGT150A120T3AG Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Typ IGBT Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 2500 -40 -40 -40 2.5 Max 0.15 0.25 Unit C/W V 150 125 100 4.7 110 C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 R25/R25 B25/85 B/B Characteristic Resistance @ 25C Min T25 = 298.15 K TC=100C RT = R25 Typ 50 5 3952 4 Max Unit k % K % T: Thermistor temperature 1 1 RT: Thermistor value at T - exp B25 / 85 T25 T SP3 Package outline (dimensions in mm) 12 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGT150A120T3AG - Rev 0 July, 2008 28 17 1 APTGT150A120T3AG Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 300 300 TJ = 125C 250 TJ=25C 200 150 VGE=15V 150 100 100 50 50 VGE=9V 0 0 1 2 3 4 0 1 VCE (V) 30 TJ=25C 250 200 2 VCE (V) 3 4 Energy losses vs Collector Current Transfert Characteristics 300 VCE = 600V VGE = 15V RG = 2.2 TJ = 125C 25 20 TJ=125C E (mJ) IC (A) VGE=13V 200 0 150 Eoff Eon 15 Er 10 100 TJ=125C 50 5 0 0 5 6 7 8 9 10 11 0 12 50 Switching Energy Losses vs Gate Resistance Eon 250 300 250 20 IC (A) 25 200 350 VCE = 600V VGE =15V IC = 150A TJ = 125C 30 150 Reverse Bias Safe Operating Area 40 35 100 IC (A) VGE (V) E (mJ) VGE=17V TJ=125C IC (A) IC (A) 250 Eoff 15 Er 10 200 150 VGE=15V TJ=125C RG=2.2 100 50 5 0 0 0 2 4 6 8 10 12 Gate Resistance (ohms) 14 16 0 400 800 VCE (V) 1200 1600 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.08 IGBT 0.7 0.5 July, 2008 0.12 0.3 0.04 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-5 APTGT150A120T3AG - Rev 0 Thermal Impedance (C/W) 0.16 APTGT150A120T3AG VCE=600V D=50% RG=2.2 TJ=125C TC=75C 80 ZVS 60 40 20 0 Forward Characteristic of diode 300 250 200 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 100 ZCS 100 40 TJ=125C 50 Hard Switching 10 TJ=125C 150 TJ=25C 0 70 0 100 130 160 190 220 IC (A) 0.4 0.8 1.2 1.6 VF (V) 2 2.4 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (C/W) 0.3 Diode 0.9 0.2 0.7 0.5 0.1 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGT150A120T3AG - Rev 0 July, 2008 rectangular Pulse Duration (Seconds)