APTGT150A120T3AG
APTGT150A120T3AG – Rev 0 July, 2008
www.microsemi.com 1
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5
P
29 1330 31 32
R1
2322
28
25
2726
7
8
3
4
1816 2019 14
16
15
182023 22
13
11 12
14
87
29
30
28 27 26
3
32
31
10
19
2
25
4
Pins 29/30/31/32 must be shorted together
Pins 26/27/28/22/23/25 must be shorted together
to achieve a phase leg
Pins 16/18/19/20 must be shorted together
Absolute maximum ratings
Symbol Parameter Max ratings Unit
VCES Collector - Emitter Breakdown Voltage 1200 V
TC = 25°C 220
IC Continuous Collector Current TC = 100°C 150
ICM Pulsed Collector Current TC = 25°C 300
A
VGE Gate – Emitter Voltage ±20 V
PD Maximum Power Dissipation TC = 25°C 833 W
RBSOA Reverse Bias Safe Operating Area Tj = 125°C 300A @ 1150V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
• Trench + Field Stop IGBT Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
• Very low stray inductance
• Kelvin emitter for easy drive
• Internal thermistor for temperature monitoring
• High level of integration
• AlN substrate for improved thermal performance
Benefits
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS Compliant
Phase leg
Trench + Field Stop IGBT
Power Module
VCES = 1200V
IC = 150A @ Tc = 100°C
APTGT150A120T3AG
APTGT150A120T3AG – Rev 0 July, 2008
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All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
ICES Zero Gate Voltage Collector Current VGE = 0V, VCE = 1200V 250 µA
Tj = 25°C 1.7 2.1
VCE(sat) Collector Emitter Saturation Voltage VGE = 15V
IC = 150A Tj = 125°C 2.0 V
VGE(th) Gate Threshold Voltage VGE = VCE , IC = 3 mA 5.0 5.8 6.5 V
IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 400 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Cies Input Capacitance 10.7
Coes Output Capacitance 0.56
Cres Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz 0.48
nF
QG Gate charge VGE= ±15V ; VCE=600V
IC=150A 1.4 µC
Td(on) Turn-on Delay Time 280
Tr Rise Time 40
Td(off) Turn-off Delay Time 420
Tf Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 150A
RG = 2.2Ω 75
ns
Td(on) Turn-on Delay Time 290
Tr Rise Time 45
Td(off) Turn-off Delay Time 520
Tf Fall Time
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 150A
RG = 2.2Ω 90
ns
Eon Turn-on Switching Energy Tj = 125°C 14
Eoff Turn-off Switching Energy
VGE = ±15V
VBus = 600V
IC = 150A
RG = 2.2Ω Tj = 125°C 16
mJ
Isc Short Circuit data VGE ≤15V ; VBus = 900V
tp ≤ 10µs ; Tj = 125°C 600 A
Reverse diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage 1200 V
Tj = 25°C 350
IRM Maximum Reverse Leakage Current VR=1200V Tj = 125°C 600 µA
IF DC Forward Current Tc = 100°C
150 A
Tj = 25°C 1.6 2.1
VF Diode Forward Voltage IF = 150A
VGE = 0V Tj = 125°C 1.6 V
Tj = 25°C 170
trr Reverse Recovery Time Tj = 125°C 280 ns
Tj = 25°C 14
Qrr Reverse Recovery Charge Tj = 125°C 28 µC
Tj = 25°C 6
Er Reverse Recovery Energy
IF = 150A
VR = 600V
di/dt =2500A/µs
Tj = 125°C 11 mJ
APTGT150A120T3AG
APTGT150A120T3AG – Rev 0 July, 2008
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Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
IGBT 0.15
RthJC Junction to Case Thermal Resistance Diode 0.25
°C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V
TJ Operating junction temperature range -40 150
TSTG Storage Temperature Range -40 125
TC Operating Case Temperature -40 100
°C
Torque Mounting torque To heatsink M4 2.5 4.7 N.m
Wt Package Weight 110 g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic Min Typ Max Unit
R25 Resistance @ 25°C 50 kΩ
∆R25/R25 5 %
B25/85 T
25 = 298.15 K 3952 K
∆B/B TC=100°C 4
%
⎥
⎦
⎤
⎢
⎣
⎡
⎟
⎟
⎠
⎞
⎜
⎜
⎝
⎛−
=
TT
B
R
RT11
exp
25
85/25
25
SP3 Package outline (dimensions in mm)
17
12
28
1
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
T: Thermistor temperature
RT: Thermistor value at T
APTGT150A120T3AG
APTGT150A120T3AG – Rev 0 July, 2008
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Typical Performance Curve
Output Characteristics (V
GE
=15V)
T
J
=25°C T
J
=125°C
0
50
100
150
200
250
300
01234
V
CE
(V)
I
C
(A)
Output Characteristics
V
GE
=15V
V
GE
=13V
V
GE
=17V
V
GE
=9V
0
50
100
150
200
250
300
01234
V
CE
(V)
I
C
(A)
T
J
= 125°C
Transfert Characteristics
T
J
=25°C
T
J
=125°C
T
J
=125°C
0
50
100
150
200
250
300
5 6 7 8 9 101112
V
GE
(V)
I
C
(A)
Energy losses vs Collector Current
Eon
Eoff
Er
0
5
10
15
20
25
30
0 50 100 150 200 250
I
C
(A)
E (mJ)
V
CE
= 600V
V
GE
= 15V
R
G
= 2.2 Ω
T
J
= 125°C
Eon
Eoff
Er
0
5
10
15
20
25
30
35
40
0246810121416
Gate Resistance (ohms)
E (mJ)
V
CE
= 600V
V
GE
=15V
I
C
= 150A
T
J
= 125°C
Switchin g Energy Losses vs Gate Resistance Reverse Bias Safe Operatin g Area
0
50
100
150
200
250
300
350
0 400 800 1200 1600
V
CE
(V)
I
C
(A)
V
GE
=15V
T
J
=125°C
R
G
=2.2 Ω
maximum E ffective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.04
0.08
0.12
0.16
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Imp e dance (°C/W)
IGBT
APTGT150A120T3AG
APTGT150A120T3AG – Rev 0 July, 2008
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Forward Characteristic of diode
T
J
=25°C
T
J
=125°C
T
J
=125°C
0
50
100
150
200
250
300
00.40.81.21.622.4
V
F
(V)
I
F
(A)
Hard
Switching
ZCS
ZVS
0
20
40
60
80
100
10 40 70 100 130 160 190 220
I
C
(A)
Fmax, Operating Frequency (kHz)
V
CE
=600V
D=50%
R
G
=2.2 Ω
T
J
=125°C
T
C
=75°C
Operating Frequency vs Collector Current
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Du rati on
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.1
0.2
0.3
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Diode
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
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and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
