> Saiiexon ism... PRODUCT CATALOG N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS 400V, 50A, 0.122 PARAMETER SYMBOL UNITS : Drain-source Volt.(1) VDSS 400 Vde SDF50N40 JAM Drain-Gate Voltage VDGR 400 Vde (Res=1.0Ma) (1) Gate-Source Voltage VGS +20 Vde FEATURES Continuous Drain Current Continuous (Te _= 25C) 1D 50 Ade @ RUGGED PACKAGE Drain Current Pulsed(3) 1DM 200 A @ HI-REL CONSTRUCTION Total Power Dissipation PD 500 W @ CERAMIC EYELETS Power Dissipation @ LEAD BENDING OPTIONS Derating > 25C 4.0 w7eec e COFPER CORED. 62 ALLOY PINS Operating & Storage Temp. | TJ/Tsig -5S TO +150 C e , Thermal Resistance Rthude 0.25 C/W @ LOW THERMAL RESISTANCE @ OPTIONAL MIL-STD-883 Max.Lead temperature TL 300 Cc SCREENING Re UNLESS OTHER~ ELECTRICAL CHARACTERISTICS Tc=26C (Wise spcoren ) SCHEMATIC PARAMETER SYMBOL} TEST CONDITIONS MIN J TYP | MAX JUNITSI Drain-source VGS=0V D Breakdown Vo | t |(8R)OSS ID=500 pA 400] - ~ Vv 5e OQ_+4 Voltage ere |ves(TH)|vDS=ves 1D=500 nA |2.0| - [4.0] Vv Gate Source - _ Leakage {GSS |VGS=420 V - {200] nA Zero Gate VDS=MAX.RATING VGS=0] | [500[ HA G Voltage Drain | IDSS |yDS=0.8 MAX.RATING Current VGS=0 TJ=125C ~ 7 2.0] mA . : Statice Drain- VGS=10 V _ Source On-State|RDS(ON i ~ | = fo.12) O 4 Resistance(1) (ON) ID=28A | , Forward Trans- VDS 2 50 V O_-4 Conductance (2) gfs IDS=28A 13 | - - |S(0) s : Input Capacitance! CISS - 18000; pF so Output Capacitance| COSS Ves OV oe V - 11100} - | pF R Ti f oat _ CUSTOM SCHEMATIC OPTIONS AVAILABLE Capacitance "| CRSS = [2zoo[ - [or] H 3 Turn-On Deiay |td(on)|vpp=400v - RG=2.2.0 - | - | 33 {ns STANDARD BEND CONFIGURATION JAM Rise Time tr (noseet tehing ti - | - [140[ ns es Turn-Off Delayltd(off)| are essentially indepen- - - |120] ns Fall Time tf dent of operating temp.) [_ = 99 | ns Total Gate Charge Gate-Source Plus| Qg - - {340} nc ae VBS=0-8' MAX RATING Gate-Source =0. . Charge Qgs (Gate. charge is essenti- ~ ~ 84 | nc ; a ndependent o e Cmiriees) Qgd soevating femperature) _ - |240|} nc Charge SOURCE-DRAIN DIODE RATINGS & CHARACT. T= 26 c ((RESS_CTHER- PARAMETER [SYMBOL] TEST CONDITIONS [MIN] TYP.|MAX.|UNITS Continuous ip: Source Current| 1S Mod tec aewins the -}|- [50] A (Body Diode) integral reverse Pulse Source P-N junction recti- Current (Body | ISM |fier (See schematic)} - | - |200] A Diode) (1) Diode Forward IF=SO0A, VGS=0V _ - Voltage (2) VSD To =+25C 2.0 Vv Reverse mame _ fo Recovery Time | rr Teeeoe Cc 1000} ns Bevery Charge | Orr |di/dt=100A/ ns - |14.2) - | nC (CUSTOM BEND OPTIONS - AVAILABLE) 4) Td = 25C to 150C, REL .3/93 2) Pulse teat: Pulse Width <300uS, Duty Cycle <2%. $3) Repetitive Rating: Pulse Width limited By Max. junction Temperature. A20 a |