eo Infineon oved Rosen ' _BUZ 1028. : impr Features Product Summary e N channel Drain source voltage Vos 55 |V Enhancement mode Drain-Source on-state resistance Rosyon) 0.015!Q e Avalanche rated Continuous drain current I 47 IA e Logic Level dwdt rated e 175 C operating temperature a VPTOS164 Type Package Ordering Code Packaging Pint | Pin2 | Pin3 BUZ102SL P-TO220-3-1 | Q67040-S4010-A2 | Tube G D s BUZ102SL E3045A | P-TO263-3-2| Q67040-S4010-A6 | Tape and Reel BUZ102SL E3045 P-TO263-3-2 | Q67040-S4010-A5 | Tube Maximum Ratings, at 7; = 25 C unless otherwise specified Parameter Symbol Value Unit Continuous drain current Ip A To = 25C 47 To = 100 C 33 Pulsed drain current [Dpulse 188 To = 25C Avalanche energy, single pulse Ens 245 mJ lp = 47 A, Vpp = 25 V, Agg = 252 Avalanche energy, periodic limited by Tmax Ear 12 Reverse diode dwdt dwdt 6 kV/us lg = 47 A, Vos = 40 V, di/dt= 200 Alus, Tmax = 175 C Gate source voltage Vas ~20 Vv Power dissipation Pot 120 w To = 25C Operating and storage temperature Tj, Tetq -55...4+175 C IEC climatic category; DIN IEC 68-1 55/175/56 Me 82355605 01333%e 5SOb Data Book 06.99Infineon BUZ 102SL technologies Thermal Characteristics . Parameter Symbol Values Unit min. | typ. | max. Characteristics Thermal resistance, junction - case Ainuc - - 1.25 | K/W Thermal resistance, junction - ambient, leded PAinsa : - 62 SMD version, device on PCB: Atha @ min. footprint - - 62 @ 6 cm? cooling area!) - - 40 Electrical Characteristics, at 7; = 25 C, unless otherwise specified Parameter Symbol Values Unit , min. typ. | max. Static Characteristics Drain- source breakdown voltage VipayDss 55 - - Vv Veg = OV, fp = 0.25 mA Gate threshold voltage, Veg = Vps Vasith) 1.2 1.6 2 lp = 90 pA Zero gate voltage drain current loss HA Vos = 50 V, Veg = OV, T= 25C - 0.1 1 Vos = 50 V, Vas = OV, 7) = 150C - - 100 Gate-source leakage current lass - 10 100 | nA Veg = 20 V, Vog=0V Drain-Source on-state resistance Rps(on) Q Vag =4.5V, bh =33A - | 0.021 | 0.024 Veg = 10 V, Ip =33A - | 0.0135} 0.015 1 Device on 40mm*40mm"t.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for drain connection. PCB is vertical without blown air. M@@ 8235605 0133393 Yue Data Book 671 06.99Infineon technologies BUZ 102SL Electrical Characteristics, at 7; = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. | max. Dynamic Characteristics Transconductance Vos22"lp*Apsion)max : 'p = 33 A Gs 10 40 Input capacitance Vas =9 V, Vog = 25 V, f= 1 MHz Oss 1380 1730 pF Output capacitance Ves =9V, Vos = 25 V, f= 1 MHz Coss 410 515 Reverse transfer capacitance Veg =0V, Vos = 25 V, f= 1 MHz Css 230 290 Turn-on delay time Vop =30V, Vas =45V, lb =47 A, Ag =3.62 ta(on) 15 25 ns Rise time Vop = 30 V, Vag = 4.5 V, Ip = 47 A, Ag =3.62 tr 30 45 Turn-off delay time Vpp = 30 V, Veg = 4.5 V, Ip = 47 A, Ag =3.6Q tu(ott) 30 45 Fall time Vop = 30 V, Vag = 4.5 V, Ip = 47 A, Ag =3.6 20 30 M@ 8235bh05 Data Book 01333394 369 672 06.99o~ technologies Electrical Characteristics, at 7; = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. | max. Dynamic Characteristics Gate to source charge Qgs - 7 10.5 jnc Vop = 40 V, Ip = 47A Gate to drain charge Qga - 23 34.5 Vop = 40 V, Ip =47A Gate charge total Qg - 60 90 Vop = 40 V, Ip = 47 A, Vag = Oto 10 V Gate plateau voltage Vipiateau) | - 4.1 - |v Vop = 40 V, Ip =47A Reverse Diode Inverse diode continuous forward current Is - - 47 iA To = 25C Inverse diode direct current,pulsed Ismi - - 188 To = 25C Inverse diode forward voltage Vsp - 1.1 1.7 |V Vag =O0V, lp=94A Reverse recovery time try - 75 115 jns Vp = 30 V, Ip=lg , dip/dt= 100 A/us Reverse recovery charge On - 0.15 | 0.26 jypC Ve = 30 V, lp=lg , dig/dt = 100 A/us WM 8235605 0133395 215 = Data Book 673 06.99Infineon technologies BUZ 102SL Power Dissipation Prot = F (Te) 8UZ102SL 130 Ww 110 80 Prot 70 60 50 40 0 20 40 60 &0 100 120 140 16C 190 Safe operating area Ip= F(Vps) parameter: D=0, Tc =25C 3 BUZI028L 10 Vos Data Book Drain current lp =f (Tc) parameter: Vag 2 10 V BUZ102SL 55 A 45 40 35 30 25 { 20 % 20 40 60 80 100 120 140 16C 190 Te Transient thermal impedance Zac = F(t) parameter : D = 6/T 1 BUZ102SL Zthsc _ 1 eet nae pusettt ai NE A 10 1 10 10 10% 1% 10% 10 4235605 0133396 151Data Book Infineon technologies BUZ 102SL Typ. output characteristics Ip = f(Vps) parameter: , = 80 us BUZ102SL 120/~ Pig = 120W A 100 90 80 60 | 50 40 30 20 10 $0 05 10 45 20 25 30 35 40 V 5.0 Vos Typ. transfer characteristics /p= f (Vas) parameter: f = 80 ps Vos 2 2 x Ip x Apsyon)max 80 Ip oN J Yo 16 20 25 30 35 40 Vv 5.0 * Ves 675 Typ. drain-source-on-resistance Rogion) = f (/p) parameter: Vas BUZ10281. 0080 0.020 0.010; Yas [MI= b cc de f g het J k ot 30 35 40 465 50 55 80 65 70 60 100 0.0000 190 20 80 40 50 60 70 80 A 100 bh Typ. forward transconductance Gs = Kip); T= 25C parameter: Of. 45 s 35 Os 25 \* 0 10 20 30 40 50 A 65 06.99 Mi 6235605 0133397 055-. Infineon technologies BUZ 102SL Drain-source on-resistance Fos(ony = f(7}) parameter : fp = 33 A, Veg =4.5V BUZ102S5L 0.085 Q 0070 0 060 Ros(on) 0 050 0040 0.030 0020 0010 20055 -20 20 60 100 . fT, 140 "C 200 Typ. capacitances C =f (Vos) parameter: Vag=0V, f=1 MHz 104 pF 9 10 20 Vv 40 > Vos Mm 4235605 0133398 Tey we Data Book Gate threshold voltage Vasethy = f(T) parameter: Vas = Vps, Ip = 90 pA 30 Vv 2.417 22 20 18 16h 1.4 VG@Sith) 12 10 Qs 0.6 0.4 0.2 0.056 -20 20 60 100 140 C200 ~ 7 Forward characteristics of reverse diode Ir = f(Vgp) parameter: 7 h= 80 Us 102 BU2Z102SL = 25C typ = 175 'C typ y, q, T, = 25C (98%) T, = 175 C (98%) 10 000 04 O08 12 16 20 24 V 30 *e Vsp 06.99 Infineon BUZ 102SL tachnalogies Avalanche Energy Eqs = f (7) Typ. gate charge parameter: Ip = 47 A, Vpp = 25 V Ves = F(Qgate) Res = 25Q parameter: Ip puls = 47 A BUZ102SL 260 16 mJ v 220 200 12 180 i 160 g 10 140 8 120 | 100 | 6 80 60 4 0 _ 2 20 So 40 60 80 100 120 140 C 180 % 10 20 3 40 50 60 70 80 nC 100 ~ fj * Qate Drain-source breakdown voltage Vipryoss = f(T) BUZ102S1. 66 Vv 64 62 Vierypss _~ 56 52 5056 -20 20 60 100 140 "C 200 . fT, Data Book 677 06.99 mm 8235605 0133399 360Infineon technologies Gehausemabbilder Package Outlines GehadusemaBbilder Package Outlines (MaBe in mm, wenn nicht anders angegeben) (Dimensions in mm, unless otherwise specified) P-DSO-6-6/-7 Gewicht etwa 0.1 5g 0:88 2008 x45" Approx. weight 0.15 g a . 02 z723 TT] =| Bo | es 214i a 2) nt Le rn. Op aa |! q ine 4 12 LU : | 0.64 10.25 8x | ae oe 4 A ! 6102 . 1 8 5 5 92 af 4 toon > Index Marking (Chamfer) 1) Does not include plastic or metal protrusion of 0.15 max. per side Bild 16 P-TO218-AA (P-TO218-2-1) Gewicht etwa 4.9 g Approx. weight 4.9 g yt Figure 16 15202 49 28M 13 |] 43 50's 2.5203 0.4 A 1) Punch direction, burr max. 0.04 2) Dip tinning 3) Max. 15.5 by dip tinning press burr max. 0.05 radii not dimensioned max, 0.2 GPT0S156 Bild 17 Data Book 1 Mi 4235605 Figure 17 055 06.99 0133774 1145- Infineon technologies Gehause maBbilder Package Outlines P-TO220-3-1 Gewicht etwa 1.8 g 10302 Approx. weight 1.8 g a a 44 4.27201 e 3 0.50.1 .) Typical All metal surfaces tin plated, except area of cut. GPTOS1S5 Bild 18 Figure 18 P-TO251-3-1 Gewicht etwa 2.0 g Approx. weight 2.0 g esis ats +9010 _[0.9%868 q 3x 0.75201 0.57088 456 GPTO9050 All metal surfaces tin plated, except area of cut. Bild 19 Data Book Figure 19 1056 MB 6235605 03433775 O50Infineon technologies GehausemaBbilder Package Outlines P-TO252-3-1. Gewicht etwa 0.38 g Approx. weight 0.38 g 101s 65-0346 2 3100s >A] _, | B4sot | 0.9808 : it q Rn L 2 s} ty = , J in 1 (| 0.15 max 3x s 0...0.15 per side 0.75 20.1 0.5 #008 1201 4.57 $10.25 @IAIB] fe] 0.1] All metal surfaces tin plated, except area of cut. GPT09051 Bild 20 Figure 20 P-T0262-3-1/P?PAK Ax04 | 3 rs 0.50.1 ") Typical Metal surface min. X = 7.25, = 7,35 All metal surfaces tin plated, except area of cut. GPTog244 Bild 21 Figure 21 Data Book 1057 06.99 @@ 8235605 0133776 11?Infineon GehausemaBbilder technologies Package Outlines P-T0263-3-2/DPAK Gewicht etwa 1.38 g 10202 44 Approx. weight 1.38 g 4.27401 " 24 f pe 015201 es max} [5.08] 1} Typical All metal surfaces tin plated, except area of cut. GPTo908S Bild 22 Figure 22 SOT-23 (P-SQT23-3-1) Gewicht etwa 0.01 9 Approx. weight 0.01 g 1.14max | 29201 0.1 max ~ at +02 * py ; -1- ace. to E ty | DINems 6B Bo _ Wy ab = {2 0.4530 j 0.08.0 15 0.95 . 2... 30 [0.25 @B/C| =10.20 @IAl GPS0S5S7 Bild 23 Figure 23 Data Book 1058 06.99 @ 8235605 0133777 12e3Infineon GehadusemaBbilder lechnologies Package Outlines SOT-89. Gewicht etwa 0.01 g Approx. weight 0.01 g ace. to 5 DIN 6784 D G D 0.25 min GPS05558 Bild 24 Figure 24 SOT-223 (P:SOT223-4-1) Gewicht etwa 0.15 g Approx. weight 0.15 g 6.5102 1.60.1 ais 3201 0.1 max -_ (eB) tL ee ie Yt a PX Is | oO ET aT of i, 07:01 [2.3] 0.28.04 10.25 @A] =10.25 @[8] GPS05560 Bild 25 Figure 25 Data Book 1059 06.99 M@@ 6235605 0133778 S&TGehausemaBbilder ( Infineon technologies Package Outlines TO-92 Gewicht etwa 0.23 g Approx. weight 0.23 g 1 2 3 Hil = i~ 4202 . 34 e w 2 a ~ 4 _ { 9.4 GPT05158 Bild 26 Figure 26 TO-92-E6288 Gewicht etwa 0.23 g Approx. weight 0.23 g \ 2 8 af chy = 4 5.2 92 4.292 x _ 4 x a 2 3 ' 3 2, = 0.4% GPT05548 Bild 27 Figure 27 Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book Package Information. SMD = Surface Mounted Device Data Book 1060 06.99 MH 8235605 0133779 ?Tb =