VUO 190 IdAV = 248 A VRRM = 800-1800 V Three Phase Rectifier Bridge VRRM V V 800 1200 1400 1600 1800 800 1200 1400 1600 1800 + Type ~ ~ ~ ~ VUO 190-08NO7 VUO 190-12NO7 VUO 190-14NO7 VUO 190-16NO7 VUO 190-18NO7* - Symbol Test Conditions IdAV IdAV TC = 90C, module TA = 35C (RthCA = 0.2 K/W), module Maximum Ratings IFSM TVJ = 45C; VR = 0 248 165 A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 2800 3300 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 2500 2750 A A TVJ = 45C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 39 200 45 000 A2s A2 s 31 200 31 300 2 As A2 s -40...+150 150 -40...+125 C C C 2500 3000 V~ V~ 5 15 % 5 15 % 270 Nm Nm g t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine VISOL 50/60 Hz, RMS IISOL 1 mA Md Weight Mounting torque (M6) Terminal connection torque (M6) typ. Symbol Test Conditions IR VR = VRRM; VR = VRRM; TVJ = 25C TVJ = TVJM 0.3 5 mA mA VF IF TVJ = 25C 1.43 V VT0 rT For power-loss calculations only 0.8 2.2 V m RthJC per per per per 0.45 0.075 0.6 0.1 K/W K/W K/W K/W dS dA a Applications Supplies for DC power equipment Input rectifiers for PWM inverter Battery DC power supplies Field supply for DC motors t = 1 min t=1s Advantages Easy to mount with two screws Space and weight savings Improved temperature and power cycling Dimensions in mm (1 mm = 0.0394") M6x12 7 Characteristic Values 3 94 80 72 Creeping distance on surface Creepage distance in air Max. allowable acceleration 10 9.4 50 Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. (c) 2008 IXYS All rights reserved 26 15 26 diode, 120 module diode, 120 module C ~ 54 27 6.5 RthJH TVJ TVJM Tstg = 300 A; Features Package with screw terminals Isolation voltage 3000 V~ Planar passivated chips Blocking voltage up to 1800 V Low forward voltage drop UL registered E72873 30 TVJ = TVJM VR = 0 - + * delivery time on request I2t ~ ~ D ~ mm mm m/s2 E ~ B - A + 3 4 2 5 1 6.5 VRSM 6 12 7 25 66 M6 20080227a 1-2 http://store.iiic.cc/ VUO 190 300 3000 A A 105 50Hz, 80% VRRM VR = 0 V 2 As 2500 250 I2t IFSM IF 200 2000 150 1500 TVJ = 45C TVJ = 45C 1000 100 TVJ = 150C TVJ = 150C TVJ=150C TVJ= 25C 500 50 0 0.0 0.5 1.0 VF V 0 0.001 1.5 0.01 0.1 1 s 104 1 2 3 t Fig. 4 Forward current versus voltage drop per diode 4 5 6 7 ms 8 910 t Fig. 6 I2t versus time per diode Fig. 5 Surge overload current 600 280 A W 240 Id(AV)M RthHA : Ptot 0.1 K/W 0.2 K/W 0.5 K/W 1.0 K/W 1.5 K/W 2.0 K/W 3.0 K/W 400 200 160 120 200 80 40 0 0 0 40 80 120 160 200 240 A 0 20 40 60 Id(AV)M 80 100 120 140 C 0 Tamb Fig. 7 Power dissipation versus direct output current and ambient temperature 20 40 60 80 100 120 140 C TC Fig. 8 Max. forward current versus case temperature 0.5 K/W ZthJC0.4 0.3 Constants for ZthJC calculation: 0.2 i 1 2 3 4 0.1 0.0 0.001 Rthi (K/W) ti (s) 0.013 0.072 0.175 0.19 0.0012 0.047 0.326 2.03 VUO 190 0.01 0.1 10 s 1 Fig. 9 Transient thermal impedance junction to case IXYS reserves the right to change limits, test conditions and dimensions. (c) 2008 IXYS All rights reserved t 20080227a 2-2 http://store.iiic.cc/