Discrete POWER & Signal
Technologies
N
High Conductance Low Leakage Diode
Sourced from Process 1M.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
WIV Working I nverse Voltage 456/A
457/A
458/A
459/A
25
60
125
175
V
V
V
V
IOAverage Rectified Current 200 mA
IFDC Forw ar d Cur re nt 500 mA
ifRecurrent Peak Forward Current 600 mA
if(surge) Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond 1.0
4.0 A
A
Tstg Storage Temperature Range -65 to +200 °C
TJOperating Junction Temperature 175 °C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
1N / F DLL 4 56/ A - 459/A
PDTo ta l De vice Di ssip ation
Derate above 25°C500
3.33 mW
mW/°C
RθJA Thermal Resistance, Junction to Ambient 300 °C/W
1N/FDLL 456/A - 1N/FDLL 459/A
1N/FDLL 456/A / 457/A / 458/A / 459/A
LL-34
THE PLACEMENT OF THE EXPANSION GAP
HAS NO RELATIONSHIP TO THE LOCATION
OF THE CATHODE TERMINAL
DO-35
COL O R BAND M ARKING
DEVI CE 1ST BAND 2ND BAND
FDLL456 BROWN WHITE
FDLL456A BROWN WHITE
FDLL457 RED BLACK
FDLL457A RED BLACK
FDLL458 RED BROWN
FDLL458A RED BROWN
FDLL459 RED RED
FDLL459A RED RED
Symbol Parameter Test Conditions Min Max Units
BVB r eakdo w n Volt age 456/A
457/A
458/A
459/A
IR = 1 00 µA
IR = 1 00 µA
IR = 1 00 µA
IR = 1 00 µA
30
70
150
200
V
V
V
V
IRReverse Current 456/A
457/A
458/A
459/A
VR = 25 V
VR = 25 V, TA = 150°C
VR = 60 V
VR = 60 V, TA = 150°C
VR = 125 V
VR = 1 25 V, TA = 150°C
VR = 175 V
VR = 1 75 V, TA = 150°C
25
5.0
25
5.0
25
5.0
25
5.0
nA
µA
nA
µA
nA
µA
nA
µA
VFForward Voltage 456
457
458
459
456/A-459/A
IF = 40 mA
IF = 1 0 mA
IF = 7.0 mA
IF = 3.0 mA
IF = 1 00 m A
1.0
1.0
1.0
1.0
1.0
V
V
V
V
V
CODiode Capacitance VR = 0, f = 1. 0 M Hz 6. 0 pF
Electrical Characteristics TA = 25°C unless otherwise noted
1N/FDLL 456/A / 457/A / 458/A / 459/A
High Conductance Low Leakage Diode
(continued)
