DATA SH EET
Product specification
Supersedes data of 1999 Aug 16 2003 Apr 15
DISCRETE SEMICONDUCTORS
BLS3135-50
Microwave power transistor
b
ook, halfpage
M3D259
2003 Apr 15 2
Philips Semiconductors Product specification
Microwave power transistor BLS3135-50
FEATURES
•Suitable for short and medium pulse applications
•Internal input and output matching networks for an easy
circuit design
•Emitter ballasting resistors improve ruggedness
•Gold metallization ensures excellent reliability
•Interdigitated emitter-base structure provides high
emitter efficiency
•Multicellgeometryimprovespowersharingandreduces
thermal resistance.
APPLICATIONS
•Commonbaseclass-Cpulsedpoweramplifiersforradar
applications in the 3.1 to 3.5 GHz band.
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a 2-lead rectangular flange package with a ceramic cap
(SOT422A) with the common base connected to the
flange.
PINNING - SOT422A
PIN DESCRIPTION
1 collector
2 emitter
3 base; connected to flange
Fig.1 Simplified outline.
handbook, halfpage
1
2
33
MBK051
QUICK REFERENCE DATA
RF performance at Th=25°C in a common base class-C test circuit.
MODE OF OPERATION f
(GHz) VCB
(V) PL
(W) Gp
(dB) ηC
(%)
Pulsed, class-C 3.1 to 3.5 40 50 typ. 8 typ. 40
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
2003 Apr 15 3
Philips Semiconductors Product specification
Microwave power transistor BLS3135-50
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
Note
1. Equivalent thermal impedance under pulsed microwave operating conditions. Measured with IR-scan with 20 µm
spot size at hotspot.
CHARACTERISTICS
Tj=25°C unless otherwise specified.
APPLICATION INFORMATION
RF performance at Th=25°C in a common-base test circuit.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter −75 V
VCES collector-emitter voltage RBE =0 −75 V
VEBO emitter-base voltage open collector −2V
I
CM peak collector current tp≤100 µs; δ≤10% −6A
P
tot total power dissipation tp= 100 µs; δ= 10%; Tmb =25°C−80 W
Tstg storage temperature −65 +200 °C
Tjoperating junction temperature −200 °C
Tsld soldering temperature up to 0.2 mm from ceramic cap;
t≤10 s −235 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Zth j-h thermal impedance from junction to heatsink tp= 100 µs; δ= 10%; note 1 0.71 K/W
tp= 300 µs; δ= 10%; note 1 0.99 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V(BR)CBO collector-base breakdown voltage IC= 15 mA; open emitter 75 −V
V(BR)CES collector-emitter breakdown voltage IC= 15 mA; VBE =0 75 −V
I
CBO collector leakage current VCB =40V; I
E=0 −1.5 mA
ICES collector leakage current VCE =40V; V
BE =0 −3mA
I
EBO emitter leakage current VEB = 1.5 V; IC=0 −0.3 mA
hFE DC current gain VCB =5V; I
C= 1.5 A 40 −
MODE OF OPERATION f
(GHz) VCE
(V) PL
(W) Gp
(dB) ηC
(%)
Class-C; tp= 100 µs; δ= 10% 3.1 to 3.5 40 ≥50
typ. 55 ≥7
typ. 8 ≥35
typ. 40
2003 Apr 15 4
Philips Semiconductors Product specification
Microwave power transistor BLS3135-50
Typical impedance
FREQUENCY
(GHZ) ZS
(Ω)ZL
(Ω)
3.1 23.5 −j 5.6 7.8 −j 3.7
3.2 23.6 −j 4.3 7.3 −j 4.1
3.3 23.8 −j 2.9 6.6 −j 4.3
3.4 24.3 −j 1.6 5.8 −j 4.2
3.5 24.9 −j 0.3 5.1 −j 4.1
2003 Apr 15 5
Philips Semiconductors Product specification
Microwave power transistor BLS3135-50
handbook, halfpage
02 P
D
(W)
PL
(W)
10
80
60
20
0
40
46 8
MCD758
(2)
(3)
(3)
(1)
Fig.2 load power as a function of drive
power; typical values.
VCB = 40 V; class-C; tp= 100 µs; δ= 10%.
(1) f = 3.5 GHz.
(2) f = 3.3 GHz.
(3) f = 3.1 GHz.
Fig.3 Power gain as a function of load
power; typical values.
VCB = 40 V; class-C; PL= 50 W; tp= 100 µs; δ= 10%.
(1) f = 3.5 GHz.
(2) f = 3.3 GHz.
(3) f = 3.1 GHz.
handbook, halfpage
0
(3)
(1)(2)
Gp
(dB)
20 40 80
10
−2
2
4
8
0
6
60 PL (W)
MCD759
Fig.4 Collector efficiency as a function of load
power; typical values.
VCB = 40 V; class-C; tp= 100 µs; δ= 10%.
(1) f = 3.5 GHz.
(2) f = 3.3 GHz.
(3) f = 3.1 GHz.
handbook, halfpage
0
ηC
(%)
20 PL (W)
40 80
50
0
40
60
30
20
10
MCD760
(3)
(1)(2)
Fig.5 Power gain and input return losses as
functions of frequency; typical values.
VCB = 40 V; class-C; PL= 50 W; tp= 100 µs; δ= 10%.
handbook, halfpage
3.0 3.5
20
0
4
8
12
16
10
0
2
4
6
8
3.1
Gp
(dB)
f (GHz)
3.2
Gp
3.3
Return
Losses
(dB)
3.4
MCD761
Return
Losses
2003 Apr 15 6
Philips Semiconductors Product specification
Microwave power transistor BLS3135-50
handbook, full pagewidth
MCD762
30 30
40
outputinput
C1
C2
Fig.6 Component layout for 3.1 to 3.5 GHz class-C test circuit.
Dimensions in mm.
The components are situated on one side of the copper-clad printed-circuit board with Duroid dielectric (εr= 2.2), thickness 0.38 mm.
The other side is unetched and serves as a ground plane.
C1 = C2 = ATC 100A 5.1 pF
2003 Apr 15 7
Philips Semiconductors Product specification
Microwave power transistor BLS3135-50
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOT422A 99-03-29
0 5 10 mm
scale
Flanged hermetic ceramic package; 2 mounting holes; 2 leads SOT422A
UNIT Q
cD E
1
EFH p q
mm 0.13
0.08
b
5.21
4.95 10.29
10.03
9.93
9.68 8.76
8.51
D1
10.29
10.03 1.58
1.47 19.18
17.65
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
3.43
3.18 16.51 22.99
22.73
U2
U1
9.91
9.65 0.25
w2
w1
0.76
A
5.72
4.83 3.35
2.92
inches 0.005
0.003
0.205
0.195 0.405
0.395
0.391
0.381 0.345
0.335
0.405
0.395 0.062
0.058 0.755
0.695
L
4.52
3.74
0.178
0.147 0.135
0.125 0.65 0.905
0.895 0.390
0.380 0.01 0.03
0.225
0.190 0.132
0.115
D
D1
q
U1
A
U2E1E
p
b
1
3
2
Q
F
c
M M
C
C
A
w2
B
w1AB
M M M
L
L
H
2003 Apr 15 8
Philips Semiconductors Product specification
Microwave power transistor BLS3135-50
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
LEVEL DATA SHEET
STATUS(1) PRODUCT
STATUS(2)(3) DEFINITION
I Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseor at anyotherconditionsabove thosegiveninthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentation orwarrantythatsuchapplicationswillbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
2003 Apr 15 9
Philips Semiconductors Product specification
Microwave power transistor BLS3135-50
NOTES
2003 Apr 15 10
Philips Semiconductors Product specification
Microwave power transistor BLS3135-50
NOTES
2003 Apr 15 11
Philips Semiconductors Product specification
Microwave power transistor BLS3135-50
NOTES
© Koninklijke Philips Electronics N.V. 2003 SCA75
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Contact information
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Printed in The Netherlands 613524/03/pp12 Date of release: 2003 Apr 15 Document order number: 9397 750 11151
