DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D259 BLS3135-50 Microwave power transistor Product specification Supersedes data of 1999 Aug 16 2003 Apr 15 Philips Semiconductors Product specification Microwave power transistor BLS3135-50 FEATURES PINNING - SOT422A * Suitable for short and medium pulse applications PIN * Internal input and output matching networks for an easy circuit design * Emitter ballasting resistors improve ruggedness * Gold metallization ensures excellent reliability DESCRIPTION 1 collector 2 emitter 3 base; connected to flange * Interdigitated emitter-base structure provides high emitter efficiency * Multicell geometry improves power sharing and reduces thermal resistance. 1 handbook, halfpage APPLICATIONS * Common base class-C pulsed power amplifiers for radar applications in the 3.1 to 3.5 GHz band. 3 3 2 MBK051 DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a 2-lead rectangular flange package with a ceramic cap (SOT422A) with the common base connected to the flange. Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Th = 25 C in a common base class-C test circuit. MODE OF OPERATION Pulsed, class-C f (GHz) VCB (V) PL (W) Gp (dB) C (%) 3.1 to 3.5 40 50 typ. 8 typ. 40 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 2003 Apr 15 2 Philips Semiconductors Product specification Microwave power transistor BLS3135-50 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 75 V VCES collector-emitter voltage RBE = 0 - 75 V VEBO emitter-base voltage open collector - 2 V ICM peak collector current tp 100 s; 10% - 6 A Ptot total power dissipation tp = 100 s; = 10%; Tmb = 25 C - 80 W Tstg storage temperature -65 +200 C Tj operating junction temperature - 200 C Tsld soldering temperature - 235 C up to 0.2 mm from ceramic cap; t 10 s THERMAL CHARACTERISTICS SYMBOL Zth j-h PARAMETER CONDITIONS thermal impedance from junction to heatsink VALUE UNIT tp = 100 s; = 10%; note 1 0.71 K/W tp = 300 s; = 10%; note 1 0.99 K/W Note 1. Equivalent thermal impedance under pulsed microwave operating conditions. Measured with IR-scan with 20 m spot size at hotspot. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V(BR)CBO collector-base breakdown voltage 75 - V V(BR)CES collector-emitter breakdown voltage IC = 15 mA; VBE = 0 75 - V ICBO collector leakage current - 1.5 mA ICES collector leakage current VCE = 40 V; VBE = 0 - 3 mA IEBO emitter leakage current VEB = 1.5 V; IC = 0 - 0.3 mA hFE DC current gain VCB = 5 V; IC = 1.5 A 40 - IC = 15 mA; open emitter VCB = 40 V; IE = 0 APPLICATION INFORMATION RF performance at Th = 25 C in a common-base test circuit. MODE OF OPERATION f (GHz) VCE (V) PL (W) Gp (dB) C (%) Class-C; tp = 100 s; = 10% 3.1 to 3.5 40 50 typ. 55 7 typ. 8 35 typ. 40 2003 Apr 15 3 Philips Semiconductors Product specification Microwave power transistor BLS3135-50 Typical impedance 2003 Apr 15 FREQUENCY (GHZ) ZS () ZL () 3.1 23.5 - j 5.6 7.8 - j 3.7 3.2 23.6 - j 4.3 7.3 - j 4.1 3.3 23.8 - j 2.9 6.6 - j 4.3 3.4 24.3 - j 1.6 5.8 - j 4.2 3.5 24.9 - j 0.3 5.1 - j 4.1 4 Philips Semiconductors Product specification Microwave power transistor BLS3135-50 MCD758 80 MCD759 10 Gp handbook, halfpage handbook, halfpage PL (W) (dB) (2) (1) 8 (3) 60 6 (1) (2) (3) 4 40 2 20 0 (3) -2 0 0 2 4 6 8 10 PD (W) VCB = 40 V; class-C; tp = 100 s; = 10%. (1) f = 3.5 GHz. (2) f = 3.3 GHz. (3) f = 3.1 GHz. Fig.2 20 0 40 60 PL (W) VCB = 40 V; class-C; PL = 50 W; tp = 100 s; = 10%. (1) f = 3.5 GHz. (2) f = 3.3 GHz. (3) f = 3.1 GHz. load power as a function of drive power; typical values. Fig.3 MCD760 50 C Power gain as a function of load power; typical values. MCD761 10 Gp handbook, halfpage handbook, halfpage (%) 40 (2) 80 (dB) 8 (1) Gp Return Losses 20 Return Losses (dB) 16 (3) 30 6 12 20 4 8 10 2 4 0 20 0 40 60 PL (W) 0 3.0 80 VCB = 40 V; class-C; tp = 100 s; = 10%. (1) f = 3.5 GHz. (2) f = 3.3 GHz. (3) f = 3.1 GHz. Fig.4 3.2 3.3 3.4 3.5 f (GHz) VCB = 40 V; class-C; PL = 50 W; tp = 100 s; = 10%. Collector efficiency as a function of load power; typical values. 2003 Apr 15 0 3.1 Fig.5 5 Power gain and input return losses as functions of frequency; typical values. Philips Semiconductors Product specification Microwave power transistor BLS3135-50 30 handbook, full pagewidth 30 40 C1 input output C2 MCD762 Dimensions in mm. The components are situated on one side of the copper-clad printed-circuit board with Duroid dielectric (r = 2.2), thickness 0.38 mm. The other side is unetched and serves as a ground plane. C1 = C2 = ATC 100A 5.1 pF Fig.6 Component layout for 3.1 to 3.5 GHz class-C test circuit. 2003 Apr 15 6 Philips Semiconductors Product specification Microwave power transistor BLS3135-50 PACKAGE OUTLINE Flanged hermetic ceramic package; 2 mounting holes; 2 leads SOT422A D A F 3 D1 U1 B q C c 1 L H p U2 E1 E w1 M A M B M A L 2 Q w2 M C M b 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 E E1 F H L p Q q U1 U2 w1 w2 mm 5.72 4.83 5.21 4.95 0.13 0.08 9.93 9.68 10.29 10.03 8.76 8.51 10.29 10.03 1.58 1.47 19.18 17.65 4.52 3.74 3.43 3.18 3.35 2.92 16.51 22.99 22.73 9.91 9.65 0.25 0.76 inches 0.225 0.190 0.205 0.195 0.005 0.003 0.391 0.381 0.405 0.395 0.345 0.335 0.405 0.395 0.062 0.058 0.755 0.695 0.178 0.147 0.135 0.125 0.132 0.115 0.65 0.905 0.895 0.390 0.380 0.01 0.03 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ SOT422A 2003 Apr 15 EUROPEAN PROJECTION ISSUE DATE 99-03-29 7 Philips Semiconductors Product specification Microwave power transistor BLS3135-50 DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2003 Apr 15 8 Philips Semiconductors Product specification Microwave power transistor BLS3135-50 NOTES 2003 Apr 15 9 Philips Semiconductors Product specification Microwave power transistor BLS3135-50 NOTES 2003 Apr 15 10 Philips Semiconductors Product specification Microwave power transistor BLS3135-50 NOTES 2003 Apr 15 11 Philips Semiconductors - a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. SCA75 (c) Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613524/03/pp12 Date of release: 2003 Apr 15 Document order number: 9397 750 11151