Ultra-Fast Avalanche Sinterglass Diode
BYV28-50, BYV28-100, BYV28-150, BYV28-200
Vishay Semiconductors
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 86044
72 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 1.7, 25-Aug-10
MECHANICAL DATA
Case: SOD-64
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 858 mg
FEATURES
• Controlled avalanche characteristic
• Low forward voltage
• Ultra fast recovery time
• Glass passivated junction
• Hermetically sealed package
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
APPLICATIONS
• Very fast rectification e.g. for switch mode power supply
949588
PARTS TABLE
PART TYPE DIFFERENTIATION PACKAGE
BYV28-50 VR = 50 V; IFAV = 3.5 A SOD-64
BYV28-100 VR = 100 V; IFAV = 3.5 A SOD-64
BYV28-150 VR = 150 V; IFAV = 3.5 A SOD-64
BYV28-200 VR = 200 V; IFAV = 3.5 A SOD-64
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
Peak reverse voltage, non repetitive See electrical characteristics
BYV28-50 VRSM 55 V
BYV28-100 VRSM 110 V
BYV28-150 VRSM 165 V
BYV28-200 VRSM 220 V
Reverse voltage = repetitive peak
reverse voltage See electrical characteristics
BYV28-50 VR = VRRM 50 V
BYV28-100 VR = VRRM 100 V
BYV28-150 VR = VRRM 150 V
BYV28-200 VR = VRRM 200 V
Peak forward surge current tp = 10 ms, half sine wave IFSM 90 A
Repetitive peak forward current IFRM 25 A
Average forward current IFAV 3.5 A
Pulse energy in avalanche mode, non
repetitive (inductive load switch off) I(BR)R = 1 A, Tj = 175 °C ER20 mJ
Junction and storage temperature
range Tj = Tstg - 55 to + 175 °C
BYV28-50, BYV28-100, BYV28-150, BYV28-200
Ultra-Fast Avalanche Sinterglass
Diode Vishay Semiconductors
Document Number: 86044 For technical questions within your region, please contact one of the following: www.vishay.com
Rev. 1.7, 25-Aug-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 73
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Max. Thermal Resistance vs. Lead Length
Fig. 2 - Forward Current vs. Forward Voltage
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
Fig. 4 - Reverse Current vs. Junction Temperature
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Junction ambient Lead length l = 10 mm, TL = constant RthJA 25 K/W
On PC board with spacing 25 mm RthJA 70 K/W
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 5 A VF--1.1V
IF = 5 A, Tj = 175 °C VF- - 0.89 V
Reverse current
VR = VRRM IR--1μA
VRSM I
R- - 100 μA
VR = VRRM, Tj = 165 °C IR- - 150 μA
Reverse recovery time IF = 0.5 A, IR = 1 A, iR = 0.25 A trr - - 30 ns
0
10
20
30
40
151050 202530
R
thJA
- Ther. Resist. Junction/Ambient (K/W)
l - Lead Length (mm)
949548
ll
TL = constant
I
F
- Forward Current (A)
0.001
0.01
0.1
1
10
100
0.0 0.4 0.8 1.2 1.6 2.0
V
F
- Forward Voltage (V)
16453
T
j
= 175 °C
T
j
= 25 °C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0 20 40 60 80 100 120 140 160 180
T
amb
- Ambient Temperature (°C)
16454
I
FAV
- Average Forward Current (A)
V
R
= V
RRM
half sine wave
R
thJA
≤ 25 K/W
l = 10 mm
R
thJA
≤ 70 K/W
PCB: d = 25 mm
1
10
100
1000
25 50 75 100 125 150 175
Tj - Junction Temperature (°C)
16455
VR = VRRM
IR - Reverse Current (A)
BYV28-50, BYV28-100, BYV28-150, BYV28-200
Vishay Semiconductors Ultra-Fast Avalanche Sinterglass
Diode
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 86044
74 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 1.7, 25-Aug-10
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature Fig. 6 - Diode Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS in millimeters (inches): SOD-64
0
10
20
30
40
50
60
25 50 75 100 125 150 175
16456
VR = VRRM
PR - Reverse Power Dissipation (mW)
PR - Limit
at 100 % VR
Tj - Junction Temperature (°C)
PR - Limit
at 80 % VR
0
50
100
150
200
250
0.1 1 10 100
VR - Reverse Voltage (V)
16457
CD - Diode Capacitance (pF)
f = 1 MHz
Cathode Identification 4.3 (0.168) max.
1.35 (0.053) max.
4 (0.156) max.
Sintered Glass Case
SOD-64
26(1.014) min. 26 (1.014) min.
Document-No.: 6.563-5006.4-4
Rev. 3 - Date: 09.February.2005
94 9587
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www.vishay.com Vishay
Revision: 12-Mar-12 1Document Number: 91000
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