CMLT2207G
SURFACE MOUNT SILICON
DUAL, COMPLEMENTARY
TRANSISTOR
ELECTRICAL CHARACTERISTICS - Continued: NPN (Q1) PNP (Q2)
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
fT V
CE=20V, IC=20mA, f=100MHz 300 - - - MHz
fT V
CE=20V, IC=50mA, f=100MHz - - 200 - MHz
Cob V
CB=10V, IE=0, f=1.0MHz - 8.0 - 8.0 pF
Cib V
EB=0.5V, IC=0, f=1.0MHz - 25 - - pF
Cib V
EB=2.0V, IC=0, f=1.0MHz - - - 30 pF
hie V
CE=10V, IC=1.0mA, f=1.0kHz 2.0 8.0 - - k
hie V
CE=10V, IC=10mA, f=1.0kHz 0.25 1.25 - - k
hre V
CE=10V, IC=1.0mA, f=1.0kHz - 8.0 - - x10-4
hre V
CE=10V, IC=10mA, f=1.0kHz - 4.0 - - x10-4
hfe V
CE=10V, IC=1.0mA, f=1.0kHz 50 300 - -
hfe V
CE=10V, IC=10mA, f=1.0kHz 75 375 - -
hoe V
CE=10V, IC=1.0mA, f=1.0kHz 5.0 35 - - µS
hoe V
CE=10V, IC=10mA, f=1.0kHz 25 200 - - µS
rb’Cc V
CB=10V, IE=20mA, f=31.8MHz - 150 - - ps
NF VCE=10V, IC=100µA, RS=1.0kΩ, f=1.0kHz - 4.0 - - dB
ton V
CC=30V, VBE=0.5V, IC=150mA, IB1=15mA - - - 45 ns
td V
CC=30V, VBE=0.5V, IC=150mA, IB1=15mA - 10 - 10 ns
tr V
CC=30V, VBE=0.5V, IC=150mA, IB1=15mA - 25 - 40 ns
toff V
CC=6.0V, IC=150mA, IB1=IB2=15mA - - - 100 ns
ts V
CC=30V, IC=150mA, IB1=IB2=15mA - 225 - - ns
ts V
CC=6.0V, IC=150mA, IB1=IB2=15mA - - - 80 ns
tf V
CC=30V, IC=150mA, IB1=IB2=15mA - 60 - - ns
tf V
CC=6.0V, IC=150mA, IB1=IB2=15mA - - - 30 ns
MARKING CODE: L7GLEAD CODE:
1) Emitter Q1
2) Base Q1
3) Collector Q2
4) Emitter Q2
5) Base Q2
6) Collector Q1
SOT-563 CASE - MECHANICAL OUTLINE
www.centralsemi.com
R5 (29-June 2015)