SEMICONDUCTOR TIP112F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. A C DIM A B C D E F G H R J K L M V N O P Q R H S T U V P F U FEATURES E S G : hFE=1000(Min.), B High DC Current Gain. VCE=4V, IC=1A. Low Collector-Emitter Saturation Voltage. Complementary to TIP117F. K L D J M MAXIMUM RATING (Ta=25 T L D ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 5 V DC IC 2 Pulse ICP 4 Base Current DC IB 50 Collector Power Ta=25 Dissipation Tc=25 N N T Collector Current Junction Temperature Storage Temperature Range 1 2 3 Q O T MILLIMETERS 10.30 MAX 15.30 MAX 2.700.30 0.85 MAX 3.200.20 3.000.30 12.30 MAX 0.75 MAX 13.600.50 3.90 MAX 1.20 1.30 2.54 4.500.20 6.80 2.600.20 10 25 5 0.5 2.600.15 1. BASE 2. COLLECTOR 3. EMITTER A TO-220IS mA 2 PC W 20 Tj 150 Tstg -65 150 EQUIVALENT CIRCUIT C B ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC R1 R2 = 10k = 0.6k E ) SYMBOL TEST CONDITION MIN. TYP. MAX. ICEO VCE=50V, IB=0 - - 2 ICBO VCB=100V, IE=0 - - 1 Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 2 hFE VCE=4V, IC=1A 1000 - - DC Current Gain VCE=4V, IC=2A 500 - - Collector Cut-off Current UNIT mA mA Collector-Emitter Sustaining Voltage VCEO(SUS) IC=30mA, IB=0 100 - - V Collector-Emitter Saturation Voltage VCE(sat) IC=2A, IB=8mA - - 2.5 V Base-Emitter On Voltage VBE(ON) VCE=4V, IC=2A - - 2.8 V VCB=10V, IE=0, f=0.1MHz - - 100 pF Collector Output Capacitance 2002. 6. 25 Revision No : 0 Cob 1/2 TIP112F I - V CE h FE - I C 100K A 0A 400A A 0 45 A 350 300 50 1.6 DC CURRENT GAIN h FE COLLECTOR CURRENT I C (A) 2.0 C 250A 1.2 200A 0.8 I B =150A 0.4 0 1 2 3 4 VCE =4V 30K 10K 300 100 30 10 0.01 5 COLLECTOR-EMITTER VOLTAGE V CE (V) 0.1 I C /I B =500 CAPACITANCE C ob (pF) SATURATION VOLTAGE VBE(sat) ,V CE(sat) (V) C ob - V CB 30 10 3 V BE(sat) 1 VCE(sat) 0.3 0.1 0.01 0.1 1 1k 500 300 f=0.1MHz 100 50 30 10 5 3 1 0.01 10 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A) POWER DISSIPATION P D (W) 10 5 150 CASE TEMPERATURE Ta ( C) 200 I C MAX(PULSED) 3 DC OPERATION Tc=25 C 1 0.5 s 1m 15 5 s 5m 20 100 100 10 25 50 10 SAFE OPERATING AREA 30 0 1 0.1 COLLECTOR-BASE VOLTAGE VCB (V) P D - Ta 0 10 COLLECTOR CURRENT I C (A) V BE(sat) , V CE(sat) - I C 100 1 SINGLE NONREPETITIVE PULSE Tc=25 C 0.3 CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE 0.1 1 3 5 10 30 50 100 COLLECTOR-EMITTER VOLTAGE V CE (V) 2002. 6. 25 Revision No : 0 2/2