2002. 6. 25 1/2
SEMICONDUCTOR
TECHNICAL DATA TIP112F
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
MONOLITHIC CONSTRUCTION WITH BUILT IN
BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.
FEATURES
High DC Current Gain.
: hFE=1000(Min.), VCE=4V, IC=1A.
Low Collector-Emitter Saturation Voltage.
Complementary to TIP117F.
MAXIMUM RATING (Ta=25 )
DIM MILLIMETERS
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
10.30 MAX
15.30 MAX
2.70Ź0.30
0.85 MAX
Φ3.20Ź0.20
3.00Ź0.30
A
B
C
D
E
F
G 12.30 MAX
0.75 MAXH
13.60Ź0.50
3.90 MAX
1.20
1.30
2.54
4.50Ź0.20
6.80
2.60Ź0.20
10Ɓ
J
K
L
M
N
O
P
Q
R
F
O
Q
123
L
P
N
B
G
J
M
D
N
T
T
H
E
R
T
V
S
K
L
U
T
S
0.5
5Ş
25Ş
2.60Ź0.15V
U
D
AC
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 100 V
Collector-Emitter Voltage VCEO 100 V
Emitter-Base Voltage VEBO 5 V
Collector Current DC IC2A
Pulse ICP 4
Base Current DC IB50 mA
Collector Power
Dissipation
Ta=25 PC2W
Tc=25 20
Junction Temperature Tj150
Storage Temperature Range Tstg -65 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICEO VCE=50V, IB=0 - - 2 mA
ICBO VCB=100V, IE=0 - - 1
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 2 mA
DC Current Gain hFE
VCE=4V, IC=1A 1000 - -
VCE=4V, IC=2A 500 - -
Collector-Emitter Sustaining Voltage VCEO(SUS) IC=30mA, IB=0 100 - - V
Collector-Emitter Saturation Voltage VCE(sat) IC=2A, IB=8mA - - 2.5 V
Base-Emitter On Voltage VBE(ON) VCE=4V, IC=2A - - 2.8 V
Collector Output Capacitance Cob VCB=10V, IE=0, f=0.1MHz - - 100 pF
C
B
E
R
10kΩ0.6kΩ
R
12
= =
EQUIVALENT CIRCUIT
2002. 6. 25 2/2
TIP112F
Revision No : 0
D
POWER DISSIPATION P (W)
0
0
CASE TEMPERATURE Ta ( C)
D
P - Ta
h - I
C
COLLECTOR CURRENT I (A)
0.01
100K
FE
10
DC CURRENT GAIN h
FE C
0.1 1 10
30
100
300
10K
30K
50 100 150 200
5
10
15
20
25
30
V =4V
CE
10
0.01
0.1
0.3
1
3
30
100
0.1 1 10
I /I =500
C
1
CB
COLLECTOR-BASE VOLTAGE V (V)
C - V
CAPACITANCE C (pF)
CB
0.01
SATURATION VOLTAGE
BE(sat)
COLLECTOR CURRENT I (A)
C
CE(sat)BE(sat)
V , V - I ob
ob
0.1 110 100
3
5
10
30
50
100
300
500
1k f=0.1MHz
C
V ,V (V)
CE(sat)
I - V
CCE
CE
COLLECTOR-EMITTER VOLTAGE V (V)
01
C
0.4
COLLECTOR CURRENT I (A)
COLLECTOR CURRENT I (A)
C
0.1
51
COLLECTOR-EMITTER VOLTAGE V (V)
CE
SAFE OPERATING AREA
23 45
I =150µA
B
3103050100
0.3
0.5
1
3
5
10
SINGLE NONREPETITIVE
PULSE Tc=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE
I MAX(PULSED)
C
DC OPERATION
1ms
0.8
1.2
1.6
2.0
200µA
250µA
300µA
400µA
450µA
500µA
350µA
BE(sat)
V
CE(sat)
V
B
5ms
Tc=25 C