DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BGM1011 MMIC wideband amplifier Preliminary specification 2002 Jan 14 Philips Semiconductors Preliminary specification MMIC wideband amplifier BGM1011 PINNING FEATURES * Internally matched to 50 PIN * Very high gain (up to 37 dB at 2 Ghz) DESCRIPTION 1 * Sloped gain curve for optimal performance with output into lossy cable VS 2, 5 GND2 3 RF out * 14 dBm saturated output power at 1 GHz 4 GND1 * High linearity (23 dBm IP3(out) at 1 GHz) 6 RF in * 40 dB isolation APPLICATIONS * LNB IF amplifiers 6 5 4 1 * Cable systems 6 3 * General purpose. 1 DESCRIPTION 2 Top view Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package. 4 3 2, 5 MAM455 Marking code: C1-. Fig.1 Simplified outline (SOT363) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER VS DC supply voltage CONDITIONS TYP. MAX. UNIT 5 6 V IS DC supply current 25.5 - mA |s21|2 insertion power gain f = 1 GHz 30 - dB NF noise figure f = 1 GHz 4.7 - dB PL(sat) saturated load power f = 1 GHz 13.8 - dBm LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT - 6 V - 35 mA - 200 mW storage temperature -65 +150 C Tj operating junction temperature - 150 C PD maximum drive power - 0 dBm VS DC supply voltage IS supply current Ptot total power dissipation Tstg RF input AC coupled Ts 90 C CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. 2002 Jan 14 2 Philips Semiconductors Preliminary specification MMIC wideband amplifier BGM1011 THERMAL RESISTANCE SYMBOL Rth j-s PARAMETER CONDITIONS VALUE UNIT 300 K/W thermal resistance from junction to solder point Ptot = 200 mW; Ts 90 C CHARACTERISTICS VS = 5 V; IS = 25.5 mA; Tj = 25 C unless otherwise specified. SYMBOL IS |s21 PARAMETER CONDITIONS supply current |2 insertion power gain MIN. 20 TYP. 25.5 MAX. 32 UNIT mA f = 100 MHz - 25 - dB f = 1 GHz - 30 - dB f = 1.8 GHz - 35 - dB f = 2.2 GHz - 37 - dB f = 2.6 GHz - 32 - dB f = 3 GHz - 28 - dB RL IN return losses input f = 1 GHz - 11 - dB f = 2.2 GHz - 8 - dB RL OUT return losses output f = 1 GHz - 18 - dB f = 2.2 GHz - 12 - dB NF noise figure f = 1 GHz - 4.7 - dB f = 2.2 GHz - 4.6 - dB - 2.9 - GHz BW bandwidth at |s21|2 -3 dB below flat gain at 1 GHz K stability factor f = 1 GHz - 1.8 - - f = 2.2 GHz - 0.9 - - f = 1 GHz - 13.8 - dBm f = 2.2 GHz - 10.8 - dBm at 1 dB gain compression; f = 1 GHz - 12.2 - dBm at 1 dB gain compression; f = 2.2 GHz - 7.7 - dBm PL(sat) saturated load power PL 1 dB load power IP3(in) input intercept point f = 1 GHz - -7 - dBm f = 2.2 GHz - -20 - dBm IP3(out) output intercept point f = 1 GHz - 23 - dBm f = 2.2 GHz - 16 - dBm 2002 Jan 14 3 Philips Semiconductors Preliminary specification MMIC wideband amplifier BGM1011 APPLICATION INFORMATION Figure 2 shows a typical application circuit for the BGM1011 MMIC. The device is internally matched to 50 , and therefore does not need any external matching. The value of the input and output DC blocking capacitors C1, C2 should be not more than 100 pF for applications above 100 MHz. Their values can be used to fine tune the input and output impedance. However, when the device is operated below 100 MHz, the capacitor value should be increased. The nominal value of the RF choke, L1 is 100 nH. At frequencies below 100 MHz this value should be increased to 200 nH. At frequencies between 1 and 3 GHz a much lower value must be used (e.g. 18 nH) to improve return losses. For optimal results, a good quality chip inductor such as the TDK MLG 1608 (0603), or a wire-wound SMD type should be chosen. Capacitor, C4 and resistor, R1 are added for optimal supply decoupling. Both the RF choke, L1 and the 22 nF supply decoupling capacitor, C3 should be located as closely as possible to the MMIC. Separate paths must be used for the ground planes of the ground pins GND1, GND2, and these paths must be as short as possible. When using vias, use multiple vias per pin in order to limit ground path inductance. Vs C4 C3 1 [Vs] R1 L1 C2 C1 RF in RF out 6 [In] Fig.2 Typical application circuit 3 [Out] BGM1011 SOT363 4 [GND1] 2,5 [GND2] Fig.2 Typical application circuit List of components used for the typical application; an amplifier for LNB IF output. COMPONENT DESCRIPTION VALUE DIMENSIONS. C1, C2 multilayer ceramic chip capacitor 100 pF 0603 C3 multilayer ceramic chip capacitor 22 nF 0603 C4 multilayer ceramic chip capacitor 5.6 pF 0603 R1 SMD resistor 10 0603 L1 SMD inductor 10 to 200 nH 0603 2002 Jan 14 4 Philips Semiconductors Preliminary specification MMIC wideband amplifier BGM1011 90 1.0 +1 45 +0.5 135 0.8 +2 0.6 +0.2 0.4 +5 0 0.2 0.5 3GHz 1 100MHz 2 0.2 5 0 180 0 -5 -0.2 -2 -135 -45 -0.5 -1 I S = 25.5 mA; VS = 5.0 V; PD = -35 dBm; ZO = 50 . 1.0 -90 Fig.3 Input reflection coefficient (s11); typical values. 90 1.0 +1 135 45 +0.5 0.8 +2 0.6 +0.2 3GHz 100MHz 0.4 +5 0.2 0 0.2 1 5 2 0 180 -5 -0.2 -135 I S = 25.5 mA; VS = 5.0 V; PD = -35 dBm; ZO = 50 . -2 -0.5 -45 -1 1.0 -90 Fig.4 Output reflection coefficient (s22); typical values. 2002 Jan 14 0 5 Philips Semiconductors Preliminary specification MMIC wideband amplifier BGM1011 40 2 |s21| (dB) 0 |s12|2 (dB) -10 (3) 35 (2) (1) -20 30 -30 25 -40 20 -50 0 1000 2000 0 3000 1000 2000 PD = -35 dBm; ZO = 50 . (1) I S = 19.5 mA; VS= 4.5 V (2) I S = 25.5 mA; VS= 5.0 V (3) I S = 29.8 mA; VS= 5.5 V I S = 25.5 mA; VS = 5.0 V; PD = -35 dBm; ZO = 50 . Fig.5 3000 f (MHz) f (MHz) Isolation (|s12|2) as a function of frequency; typical values. Fig.6 20 PL (dBm) Insertion gain (|s21|2) as a function of frequency; typical values. 15 PL (dBm) (3) 15 (3) (2) (1) 10 (2) 10 5 5 0 0 (1) -5 -30 -25 -20 -15 -10 -5 0 PD (dBm) -40 -35 -30 f = 1 GHz; ZO = 50 . (1) VS= 4.5 V (2) VS= 5.0 V (3) VS= 5.5 V f = 2.2 GHz; Z O = 50 . (1) VS= 4.5 V (2) VS= 5.0 V (3) VS= 5.5 V Fig.7 Fig.8 Load power as a function of drive power at 1 GHz; typical values. 2002 Jan 14 6 -25 -20 -15 -10 -5 0 PD (dBm) Load power as a function of drive power at 2.2 GHz; typical values. Philips Semiconductors Preliminary specification MMIC wideband amplifier BGM1011 5 6 NF (dB) K (3) 4 5.5 3 5 2 (2) 4.5 (1) 1 0 4 0 1000 2000 0 3000 f (MHz) ZO = 50 . (1) I S = 19.5 mA; VS= 4.5 V (2) I S = 25.5 mA; VS= 5.0 V (3) I S = 29.8 mA; VS= 5.5 V Fig.9 2000 3000 f (MHz) IS = 25.5 mA; V S = 5.0 V; ZO = 50 . Noise figure as a function of frequency; typical values. 2002 Jan 14 1000 Fig.10 Stability factor as a function of frequency; typical values. 7 2002 Jan 14 67.08784 56.50393 41.27266 31.24721 16.643 4.096 -8.496 -10.05 -1.301 0.32983 0.39031 0.34466 0.25915 0.21573 0.20270 2200 2400 2600 2800 3000 8 12.698 23.98115 67.60676 60.12684 2000 16.758 0.23153 50.8261 1800 42.13907 -24.6 0.18024 -4.547 0.20591 1400 1600 35.11364 -31.1 0.25490 1200 13.8 29.73953 -29.66 0.32818 0.29729 800 1000 -26.32 4.7 -19.36 0.35160 600 20.26048 17.83811 18.52172 0.36404 400 s21 MAGNITUDE (ratio) 0.954 0.36374 200 13.342 ANGLE(d eg) -11.09 0.36264 MAGNITUDE (ratio) 100 f (MHz) s11 0.010019 0.011761 -100.2 -131.3 154.16 164.33 178.27 0.014548 0.013946 0.013803 0.013121 0.008713 -73.19 -160.5 0.007684 0.007313 0.008254 0.009534 0.010391 0.011953 0.014492 0.017526 0.01974 MAGNITUDE (ratio) -52.69 -36.83 -24.67 -14.9 -7.408 -1.373 4.008 12.011 24.366 ANGLE (deg) s12 Scattering parameters: VS = 5.0 V; IS = 25.5 mA; PD = -35 dBm; ZO = 50 ; Tamb = 25 C 55.48 50.499 52.913 46.727 49.659 42.512 44.601 33.26 23.979 9.695 -0.816 -5.884 -9.388 -9.722 3.391 16.631 ANGLE (deg) 0.37422 0.33170 0.30823 0.28137 0.26347 0.24156 0.21778 0.18642 0.15786 0.13665 0.12032 0.10619 0.10301 0.13121 0.22343 0.32582 MAGNITUDE (ratio) s22 130.13 136.52 151.71 173.89 -146.8 -100.6 -65.13 -44.12 -33.18 -25.66 -15.72 1.087 30.828 63.715 80.749 75.129 ANGLE (deg) 1.3 1.2 1.0 0.9 0.9 0.9 1.1 1.4 1.6 1.7 1.7 1.8 1.7 1.6 1.4 1.2 KFACTOR Philips Semiconductors Preliminary specification MMIC wideband amplifier BGM1011 Philips Semiconductors Preliminary specification MMIC wideband amplifier BGM1011 PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT363 D E B y X A HE 6 v M A 4 5 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION SOT363 2002 Jan 14 REFERENCES IEC JEDEC EIAJ SC-88 9 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Preliminary specification MMIC wideband amplifier BGM1011 DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2002 Jan 14 10 Philips Semiconductors - a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. SCA73 (c) Koninklijke Philips Electronics N.V. 2001 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613516/02/pp11 Date of release: 2002 Jan 14 Document order number: 9397 750 09297 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: NXP: BGM1011 T/R OM7614/BGM1011,598