LORAL MICROWAVE-FSTI T-07~19 GaAS TUNING VARACTORS DESCRIPTION The GC51100 to GC51600 Series Tuning Varactors are abrupt junction gallium arsenide devices featuring the highest Q and lowest series resistance available. Avail- able tuning voltages range from 15 to 60 volts. Modern state-of-the-art epitaxial growth techniques are employed in the manufacture of these devices so that repeatable characteristics and reliable performance is maintained. These diodes are available in a variety of packages specific packages are listed in Note 1. ELECTRICAL SPECIFICATIONS GC51100 SERIES 15-VOLT APPLICATIONS These devices are recommended for use in products requiring ultra high Q voltage variable capacitance such as: tunable VCOs, frequency synthesizers, voltage tunable filters, amplifiers and phase shifters. Other applications include linear frequency and phase modulators for communications equipment. FEATURES Optimized for broadband tuning - C through Ka band Higher Q than comparable silicon devices High reliability field proven TOTAL CAPACITANCE! | TOTAL CAPACITANCE! | CAPACITANCE RATIO QUALITY FACTOR? QUALITY FACTOR MODEL (AT OV, 1MHz) (AT -4V, 1MHz) (Cio/Cti5) (Q-4, 50 MHz) (Q-4, 1 GHz) NUMBER TYPICAL NOMINAL MIN . MIN MIN GC51101 30 27 1.6 16000 800 GC51102 47 33 1.7 15000 750 GC51103 .60 39 1.9 14000 700 GC51104 75 47 2.1 12000 600 GC51105 95 56 2.2 11000 550 GC51106 1.15 68 2.4 9600 480 GC51107 1.4 82 2.5 8800 440 GC51108 1.8 1.0 2.6 8400 420 G@C51109 2.2 1.2 27 8000 400 GC51110 2.7 1.5 2.8 7600 370 GC51111 3.3 18 2.9 7200 360 GC51112 41 2.2 2.9 6800 340 GC51113 5.1 27 3.0 6400 320 Trg ate Tig Morgue tonne Voce &VR C4716 pF << as Vole Sica 4+ 50000! C Vp = 15 Vatts c RS. = 8 SRE 20000 Ae 0 2, PD LISN Gcs1113 4 Fd pI 28 ES EEE Eee LI 3 SS] costt10 r0000F- Va oe PE Gcsr108 LC SSS8883e a Fe | ara mma a aww o Fee eee sie a 3 GC51103 < pp] GC51102 > GC51101 2000 a podiis a 4 2 4 6 10) 15 30 645 60 100 4 4 10 #15 20 30 45 60 100 Vp, REVERSE BIAS (VOLTS) Vp, REVERSE BIAS (VOLTS) LOrAl. Microwave - FSI 40LORAL MICROWAVE-FSI SLE D mm! 5580130 0000455 39a mw J -DO7-/9 _ TUNING VARACTORS- GaAS TUNING VARACTORS ELECTRICAL SPECIFICATIONS GC51300 SERIES 30-VOLT TOTAL CAPACITANCE | TOTAL CAPACITANCE! | CAPACITANCE RATIO QUALITY FACTOR? QUALITY FACTOR MODEL (AT OV, 1MHz) (AT -4V, 1MHz) (Cro/Cizo) (Q-4, 50 MHz) (Q-4, 1 GHz) NUMBER TYPICAL NOMINAL MIN MIN MIN GC51301 35 27 1.6 13000 650 GC51302 A? 33 1.9 12000 600 GC51303 .60 39 2.1 11000 550 GC51304 15 Af 2.4 10000 500 GC51305 95 56 2.6 9000 450 GC51306 1.15 68 2.8 8000 400 GC51307 1.4 82 3.0 7200 360 GC51308 1.8 1.0 3.2 6800 340 GC51309 2.2 1.2 3.4 6400 320 GC51310 27 1.5 3.5 6000 300 GC51314 3.3 1.8 3.7 5800 290 GC51312 41 2.2 3.8 5400 270 GC51313 5.1 2.7 3.9 5200 260 i wt Minimum Q vs Reverse Voltage I GaAs T 5 neve "ewe scr Curves for GaAs Cea ene Varactors 5S 30 Volt Stties 50000+~ Vb = 30 Volts wee Package Style 30 ~ c 3e~pss yy S GC51310 {GaA . at we 2 Se 20000 (GaAs) / / 661503 (silicon) 5 RSS SY GC51313 YY 2 3, ae SS = gesta12 t 10000 LZ A a Gc81311 ff RRR EEE sO pas _ e 5 Se ats 5000 Fae 7 e LP Lo fe 7 OEE ee Ce 3 pn) pd GC51303 | 1 6651302 | 2 1301 2000 ra Poa tai Ledisi 0 1 2 #4 6 0 15 30. 45 60 100 1 4 10 15 20 30 45 60 100 Va, REVERSE BIAS (VOLTS) Vay. REVERSE BIAS (VOLTS) LORAL Microwave - FSI AlLORAL MICROWAVE-FST SLE D mm 5580130 oo004sSt 724 mw J-D7-/F GaAs TUNING VARACTORS ELECTRICAL SPECIFICATIONS GC51400 SERIES 45-VOLT TOTAL CAPACITANCE! | TOTAL CAPACITANCE | CAPACITANCE RATIO QUALITY FACTOR? QUALITY FACTOR MODEL (AT OV, 1MHz) (AT -4V, 1MHz) (Cro/Ci30) (Q-4, 50 MHz) (Q -4, 1 GHz) NUMBER TYPICAL NOMINAL MIN MIN MIN GC51401 35 27 16 10000 500 GC51402 AT 33 2.0 9000 450 GC51403 .60 39 2.3 8600 430 GC51404 5 AT 2.6 8900 400 GC51405 95 56 2.8 7600 380 GC51406 1.15 68 3.1 7200 360 GC51407 1.4 82 3.4 6800 340 GC51408 1.8 1.0 3.6 6400 320 GC51409 2.2 1.2 3.8 5500 290 GC51410 27 1.5 41 5200 260 GC51411 3.3 1.8 42 4800 240 GC51412 41 2.2 44 4600 230 GC51413 5.1 24 45 4400 220 Typical GaAs Tuning 50000 f 5 oJ Varactor Curves a YA PIN Cvs VR Vj / ~ 3 Rd Volt Series . GC51410 (GaAs) / & age Style w 2 SS _ | 20000 "4 2 <_ PSM Ea SMo~__ GC51413 a gg EEE EE ie |] soa | Veerite te Fg eS RE F = BoE en GC51409 OQ, r REE Eee SE cores sooo Z oO fe a _ ae Pa a __[~ [| ~_o Gcs1408 _ o PO EE ee GC51405 Ea 3 Se G05 1404 J Minimum OQ vs Reverse Voltage ee A) for GaAs and Si Tuning Varactors 2 @c51401 _| 2000 Cy4= 1.5 pF 7 | Vb = 45 Volts i [ Liisi | | | | | j | LL 0 1 2 4 6 0 15 30 45 60 100 1 4 10 15 20 30 45 60 100 Vp. REVERSE BIAS (VOLTS) Vp, REVERSE BIAS (VOLTS) LOoRAL Microwave - FSI 42LORAL MICROWAVE-FST Sie D mm 5580130 on0045? 440 mw J-O7-/7 GaAS TUNING VARACTORS ELECTRICAL SPECIFICATIONS GC51600 SERIES 60-VOLT NOTES 1. TOTAL CAPACITANCE" | TOTAL CAPACITANCE | CAPACITANCE RATIO | QUALITY FACTOR? | QUALITY FACTOR _ MODEL (AT OV, 1MHz) (AT -4V, 1MHz) (Cio/Cis0) (Q-4, 50 MHz) (Q -4, 1 GHz) NUMBER TYPICAL NOMINAL MIN MIN MIN GC51601 35 of 1.7 9000 450 GC51602 47 33 2.1 8600 430 GC51603 .60 39 2.4 8200 410 GC51604 5 A? 2.7 7800 390 GC51605 95 56 3.0 7200 360 GC51606 1.15 .68 3.3 6600 330 GC51607 1.4 82 3.6 6200 310 GC51608 1.8 1.0 3.9 5800 290 GC51609 2.2 1.2 4.2 5000 250 GC51610 27 1.5 4.4 4600 230 GC51611 3.3 1.8 46 4400 220 GC51612 4.1 2.2 48 4200 210 5 50000 A z 3 l 1610 {GaAs} Y/ 3 2 20000 4 d, ! WA a> 10000 E i 7 1703 {Sitcom} + 5 5 * 5000 Z Zo 3 | ln O ws Reverse Voltage 2 2000 for GaAs md $81 Tang Verectors_| Vy = 60 Volts co 1 2 4 6 10 15 30 45 60 100 1 to rol 1 I Phd VR. REVERSE BIAS (VOLTS) Specifications shown in the table are based on data taken from diodes mounted in case style 30. Other available case styles are 45, 80, 81, 85, 88 and 89. Note that tuning ratio will vary with each package. . Capacitance values listed include the package capacitance with a standard tolerance of +10% at -4 volts. Tighter tolerances, or other special electri- cal/mechanical variations may be available upon re- quest. Please contact your local representative or the factory direct for your special needs. Capacitance is measured at 1 MHz at the specified reverse bias. . Qis determined by the modified DeLoach method, at -4 volts, and extrapolated to 50 MHz. . The cathode is normally the heatsink end of each package; reverse polarity is available for specific pack- ages at a slightly higher cost. Vp. REVERSE BIAS (VOLTS) 5. All devices are subjected to 24-hour operational burn- in at 80% Ve and at 100C before final test. RATINGS Reverse Leakage Current Breakdown voltage, VB: 2.0uA at 80% minimum rated breakdown voltage 10yA Temperature Coefficient of Capacitance: Storage Temperature: Operating Temperature: 200 ppm/C at -4 volts -65C to +200C -55C to +150C LORAL Microwave - FSI 43