The RF Line
RF Power Transistor
Designed for 28 Volt microwave large–signal, common base, Class–C CW
amplifier applications in the range 1600 – 1640 MHz.
•Specified 28 Volt, 1.6 GHz Class–C Characteristics
Output Power = 30 Watts
Minimum Gain = 7.5 dB, @ 30 Watts
Minimum Efficiency = 40% @ 30 Watts
•Characterized with Series Equivalent Large–Signal Parameters from
1500 MHz to 1700 MHz
•Silicon Nitride Passivated
•Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Collector–Emitter V oltage VCES 60 Vdc
Emitter–Base Voltage VEBO 4.0 Vdc
Collector–Current IC4.0 Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°CPD103
0.58 Watts
°C/W
Storage Temperature Range Tstg –65 to +150 °C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case (1) (2) RθJC 1.7 °C/W
(1) Thermal measurement performed using CW RF operating condition.
(2) Thermal resistance is determined under specified RF operating conditions by infrared measurement techniques.
CASE 395C–01, STYLE 2
30 WATTS, 1.6 GHz
RF POWER TRANSISTOR
NPN SILICON
Order this document
by MRF16030/D
SEMICONDUCTOR TECHNICAL DATA
1
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 100 mAdc, VBE = 0) V(BR)CES 55 — — Vdc
Collector–Base Breakdown Voltage
(IC = 100 mAdc, IE = 0) V(BR)CBO 55 — — Vdc
Emitter–Base Breakdown Voltage
(IE = 10 mAdc, IC = 0) V(BR)EBO 4.0 — — Vdc
Collector Cutoff Current
(VCE = 28 Vdc, VBE = 0) ICES — — 10 mAdc
ON CHARACTERISTICS
DC Current Gain
(ICE = 1.0 Adc, VCE = 5.0 Vdc) hFE 20 35 80 —
FUNCTIONAL TESTS
Collector–Base Amplifier Power Gain
(VCC = 28 Vdc, Pout = 30 Watts, f = 1600/1640 MHz) Gpe 7.5 7.7 — dB
Collector Efficiency
(VCC = 28 Vdc, Pout = 30 Watts, f = 1600/1640 MHz) η40 45 — %
Input Return Loss
(VCC = 28 Vdc, Pout = 30 Watts, f = 1600/1640 MHz) IRL 8.0 — — dB
Output Mismatch Stress
VCC = 28 Vdc, Pout = 30 W atts, f = 1600 MHz, Load
VSWR = 3:1, All phase angles at frequency of test
ΨNo Degradation in Output Power
2
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Figure 1. MRF16030 Test Fixture Schematic
B1 Fair Rite Bead on #24 Wire
C1, C5 100 pF, B Case, ATC Chip Cap
C2 0.1 µF, Dipped Mica Cap
C3 0.1 µF, Chip Cap
C4 47 µF, 50 V, Electrolytic
L1, L2 3 Turns, #18, 0.133″ ID, 0.15″ Long
L3 9 Turns, #24 Enamel
R1 82 Ω, 1.0 W, Carbon
Board Material – Teflon
Glass Laminate Dielectric
Thickness = 0.30
″
,
ε
r = 2.55
″
, 2.0 oz. Copper
Figure 2. Series Equivalent Input/Output Impedance
C1 C2 C4C3
28 Vdc
L2
L1
B1
R1
L3
C5
VCC = 28 Vdc, Pout = 30 W
ZOL* = Conjugate of the optimum load impedance into which the device
output operates at a given output power, voltage and frequency.
Zin
ZOL*
1.7 GHz
Zo = 10
Ω
f = 1.5 GHz 1.6 GHz
1.7 GHz 1.6 GHz
f = 1.5 GHz
f
MHz Zin
Ohms ZOL*
Ohms
1500 3.05 + j 4.88 2.66 + j 2.53
1600 4.32 + j 6.00 1.79 + j 2.80
1700 5.62 + j 5.79 1.51 + j 2.64
3
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Pin, INPUT POWER (WATTS)
P
out , OUTPUT POWER (WA TTS)
4.0 4.5 5.5 6.5 7.5 8.5 9.0
45
15
Figure 3. Output Power versus Input Power
7.0 8.05.0 6.0
VCC = 28 Vdc
1.64 GHz
f = 1.6 GHz
40
35
30
25
20
4
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PACKAGE DIMENSIONS
CASE 395C–01
ISSUE A
U
D
K
N
J
H
E
C
DIM
AMIN MAX MIN MAX
MILLIMETERS
0.739 0.750 18.77 19.05
INCHES
B0.240 0.260 6.10 6.60
C0.165 0.198 4.19 5.03
D0.215 0.225 5.46 5.72
E0.055 0.070 1.40 1.78
H0.079 0.091 2.01 2.31
J0.004 0.006 0.10 0.15
K0.210 0.240 5.33 6.10
N0.315 0.330 8.00 8.38
Q0.125 0.135 3.18 3.42
U0.560 BSC 14.23 BSC
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
–T–
1
2
3
–A–
–B–
2 PLQ
M
A
M
0.51 (0.020) B M
T
STYLE 2:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
5
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266, Fax (800) 618-8883
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
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