2SK3136 Silicon N Channel MOS FET High Speed Power Switching ADE-208-696A (Z) 2nd. Edition Nov. 1998 Features * Low on-resistance RDS(on) =4.5m typ. * Low drive current * 4V gate drive device can be driven from 5V source 2SK3136 Outline TO-220AB D G 1 2 3 1. Gate 2. Drain(Flange) 3. Source S Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage VDSS 40 V Gate to source voltage VGSS 20 V Drain current ID 75 A 1 Drain peak current ID(pulse)* 300 A Body-drain diode reverse drain current IDR 75 A 50 A 333 mJ 100 W Avalanche current Avalanche energy Channel dissipation 3 IAP* EAR* 3 Pch* 2 Channel temperature Tch 150 C Storage temperature Tstg -55 to +150 C Note: 2 1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50 2SK3136 Electrical Characteristics (Ta = 25C) Item Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 40 -- -- V ID = 10mA, VGS = 0 Gate to source leak current IGSS -- -- 0.1 A VGS = 20V, VDS = 0 Zero gate voltege drain current IDSS -- -- 10 A VDS = 40 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.0 -- 2.5 V ID = 1mA, VDS = 10V*1 Static drain to source on state resistance RDS(on) -- 4.5 5.8 m ID = 40A, VGS = 10V*1 -- 6.5 10 m ID = 40A, VGS = 4V*1 Forward transfer admittance |yfs| 50 80 -- S ID = 40A, VDS = 10V*1 Input capacitance Ciss -- 6800 -- pF VDS = 10V Output capacitance Coss -- 1300 -- pF VGS = 0 Reverse transfer capacitance Crss -- 380 -- pF f = 1MHz Total gate charge Qg -- 130 -- nc VDD = 25V Gate to source charge Qgs -- 25 -- nc VGS = 10V Gate to drain charge Qgd -- 30 -- nc ID = 75A Turn-on delay time td(on) -- 60 -- ns VGS = 10V, ID = 40A Rise time tr -- 300 -- ns RL = 0.75 Turn-off delay time td(off) -- 550 -- ns Fall time tf -- 400 -- ns Body-drain diode forward voltage VDF -- 1.05 -- V IF = 75A, VGS = 0 Body-drain diode reverse recovery time trr -- 90 -- ns IF = 75A, VGS = 0 diF/ dt =50A/s Note: Symbol 1. Pulse test 3 2SK3136 Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 1000 I D (A) 150 Drain Current Channel Dissipation Pch (W) 200 100 50 100 30 10 3 1 10 0 s s 1 m s 300 10 PW = 10 DC ms Op (1 s e (T rati hot) c = on 25 Operation in C ) this area is limited by R DS(on) 0.3 0 50 100 150 Case Temperature 0.1 Ta = 25C 3 30 0.1 0.3 1 10 100 Drain to Source Voltage V DS (V) 200 Tc (C) Typical Output Characteristics Typical Transfer Characteristics 100 100 4V 5V VGS = 10 V ID 60 Pulse Test (A) 80 3V 40 20 Drain Current Drain Current I D (A) 3.5 V 80 60 40 20 2.5 V 0 4 2 4 6 Drain to Source Voltage 8 10 V DS (V) V DS = 10 V Pulse Test 0 75C 25C Tc = -25C 1 2 3 Gate to Source Voltage 4 5 V GS (V) 2SK3136 Drain to Source Saturation Voltage vs. Gate to Source Voltage 0.4 0.3 I D = 50 A 0.2 20 A 0.1 10 A 0 12 4 8 Gate to Source Voltage Static Drain to Source on State Resistance vs. Temperature 20 Pulse Test 16 12 8 4 0 -50 I D = 50 A VGS = 10 V 4V Pulse Test 50 20 10 10, 20 A 10, 20, 50 A 0 50 100 150 200 Case Temperature Tc (C) VGS = 4 V 5 10 V 2 1 1 16 20 V GS (V) 3 10 30 100 300 1000 Drain Current I D (A) Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |y fs | (S) Drain to Source Saturation Voltage V DS(on) (V) Pulse Test Drain to Source On State Resistance R DS(on) (m ) 100 0.5 Static Drain to Source on State Resistance R DS(on) (m ) Static Drain to Source on State Resistance vs. Drain Current 500 200 V DS = 10 V Pulse Test 100 50 Tc = -25 C 20 10 5 2 25 C 75 C 1 0.5 0.1 0.3 1 3 10 30 Drain Current I D (A) 100 5 2SK3136 Body-Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 30000 VGS = 0 f = 1 MHz 500 Capacitance C (pF) Reverse Recovery Time trr (ns) 1000 200 100 50 20 10 0.1 10000 3000 100 0 0.3 1 3 10 30 100 Reverse Drain Current I DR (A) V DD = 40 V 25 V 10 V 40 20 0 6 12 8 V DD = 40 V 25 V 10 V 4 V DS 80 160 240 320 Gate Charge Qg (nc) 0 400 V GS (V) V GS 500 Switching Time t (ns) 60 1000 20 16 10 20 30 40 50 Drain to Source Voltage V DS (V) Gate to Source Voltage V DS (V) Drain to Source Voltage 80 Crss 300 di / dt = 50 A / s V GS = 0, Ta = 25 C I D = 75 A Coss 1000 Dynamic Input Characteristics 100 Ciss 200 100 Switching Characteristics t d(off) tf tr t d(on) 50 20 V GS = 10 V, V DD = 30 V PW = 5 s, duty < 1 % 10 2 5 10 20 0.1 0.2 0.5 1 Drain Current I D (A) 50 100 2SK3136 Maximum Avalanche Energy vs. Channel Temperature Derating Repetitive Avalanche Energy E AR (mJ) Reverse Drain Current vs. Source to Drain Voltage (A) 100 10 V Reverse Drain Current I F 80 5V 60 V GS = 0, -5 V 40 20 Pulse Test 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 2.0 500 I AP = 50 A V DD = 25 V duty < 0.1 % Rg > 50 400 300 200 100 0 25 V SDF (V) 50 75 100 125 150 Channel Temperature Tch (C) Avalanche Test Circuit V DS Monitor Avalanche Waveform EAR = L 1 2 * L * I AP * 2 I AP Monitor VDSS VDSS - V DD V (BR)DSS I AP Rg D. U. T V DS VDD ID Vin 15 V 50 0 VDD 7 2SK3136 Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance s (t) 3 Tc = 25C 1 D=1 0.5 0.3 0.2 0.1 ch - c(t) = s (t) * ch - c ch - c = 1.25 C/W, Tc = 25 C 0.1 0.05 PDM 0.02 1 lse 0.0 t pu ho 1s 0.03 0.01 10 D= PW T PW T 100 1m 10 m Pulse Width 100 m 1 10 PW (S) Switching Time Test Circuit Waveform Vout Monitor Vin Monitor 90% D.U.T. RL Vin Vin 10 V 50 V DD = 30 V Vout 10% 10% 90% td(on) Package Dimensions 8 tr 10% 90% td(off) tf Unit: mm 2SK3136 9.5 + 0.1 4.440.2 f 3.6 - 0.08 8.0 1.260.15 1.270.1 1.5 max 7.8 0.5 0.76 0.1 2.54 0.5 2.54 0.5 14.0 0.5 1.20.1 15.0 0.3 18.5 0.5 6.4 - 0.1 + 0.2 2.79 0.2 1.27 10.160.2 0.50.1 2.7 max Hitachi Code TO-220AB SC-46 EIAJ -- JEDEC 9 2SK3136 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 2000 Sierra Point Parkway Brisbane, CA 94005-1897 Tel: <1> (800) 285-1601 Fax: <1> (303) 297-0447 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright (c) Hitachi, Ltd., 1998. All rights reserved. Printed in Japan. 10