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ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FSV8100V 8 A, 100 V Ultra-Low VF Schottky Rectifier Features * * * * * * * * Ultra-Low Forward Voltage Drop Low Thermal Resistance Very Low Profile: Typical Height of 1.1 mm Trench Schottky Technology RoHS Compliant Green Molding Compound as per IEC61249 Standard Lead Free in Compliance with EU RoHS 2011/65/EU Directive Qualified per AEC-Q101 Rev. C Standard 3 2 TO-277 1 Anode 1 3 Applications * * * * * Anode 2 Cathode AC-DC and DC-DC Converter Mobile Charger LED lighting Solar Panel Reverse Polarity Protection Ordering Information Part Number Top Mark Package Packing Method FSV8100V FSV8100V TO-277 3L Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise noted. Symbol Parameter Value Unit VRRM Peak Repetitive Reverse Voltage 100 V VRWM Working Peak Reverse Voltage 100 V VRMS RMS Reverse Voltage 70 V DC Blocking Voltage 100 V VR IF(AV) IFSM TJ TSTG Average Rectified Peak Forward Surge Current 8 A 150 A Operating Junction Temperature Range -55 to +150 C Storage Temperature Range -55 to +150 C Non-Repetitive Peak Forward Surge Current (c) 2015 Fairchild Semiconductor Corporation FSV8100V Rev. 1.2 www.fairchildsemi.com FSV8100V -- 8 A, 100 V Ultra-Low VF Schottky Rectifier September 2015 Values are at TA = 25C unless otherwise noted. Symbol RJA JL Minimum Maximum Land Pattern Land Pattern Parameter Junction-to-Ambient Thermal Resistance 100 40 Junction-to-Lead Thermal Characteristics, Thermocouple Soldered to Anode 15 12 Junction-to-Lead Thermal Characteristics, Thermocouple Soldered to Cathode 6 Unit C/W C/W 5 Note: 1. The thermal resistances (RJA & JL) are characterized with device mounted on the following FR4 printed circuit boards, as shown in Figure 1 and Figure 2. PCB size: 76.2 x 114.3 mm. Minimum land pattern size: 4.9 x 4.8 mm (big pattern, x1), 1.4 x 1.52 mm (small pattern, x2). Maximum land pattern size: 30 x 30 mm (pattern, x2). Force line trace size = 55 mils, sense line trace size = 4 mils. F S F S F S F S F S Figure 1. Minimum Land Pattern of 2 oz Copper Figure 2. Maximum Land Pattern of 2 oz Copper Electrical Characteristics Values are at TA = 25C unless otherwise noted. Symbol BVR VF IR Parameter Breakdown Voltage Forward Voltage Drop Reverse Current Conditions IR = 0.5 mA Typ. Max. 100 0.542 IF = 5 A, TA = 125C 0.496 IF = 8 A 0.620 0.670 IF = 8 A, TA = 125C 0.574 0.600 IF = 10 A 0.674 IF = 10 A, TA = 125C 0.611 VR = 70 V 0.006 VR = 70 V, TA = 125C 5.57 VR = 100 V 0.008 0.05 VR = 100 V, TA = 125C 15.65 20 Junction Capacitance VR = 4 V, f = 1 MHz Trr Reverse Recovery Time IF = 0.5 A, IR = 1 A, Irr = 0.25 A Unit V IF = 5 A CJ (c) 2015 Fairchild Semiconductor Corporation FSV8100V Rev. 1.2 Min. V mA 672 pF 19.64 ns www.fairchildsemi.com 2 FSV8100V -- 8 A, 100 V Ultra-Low VF Schottky Rectifier Thermal Characteristics(1) 0.8 10 0.7 o 1 o TA= 125 C 0.1 Forward Voltage, VF [V] Reverse Current, IR [mA] 100 TA=150 C o TA= 75 C 0.01 o 1E-3 TA= 25 C 1E-4 TA= -55 C 20 30 0.5 TA= 25 C 0.4 0.3 o TA= 75 C 0.2 o TA= 125 C 40 50 60 70 80 Reverse Voltage, VR [V] 90 o TA= 150 C 0.0 0.01 100 0.1 1 10 Forward Current, IF [A] Figure 3. Typical Reverse Characteristics Figure 4. Typical Forward Characteristics 1400 200 Peak Forward Surge Current [A] Junction Capacitance, CJ [pF] o TA= -55 C o 0.1 o 1E-5 10 0.6 1200 1000 800 600 400 200 0 0.1 1 10 Reverse Voltage, VR [V] 180 160 140 120 100 80 60 40 20 0 100 Figure 5. Typical Junction Capacitance 1 10 Number of Cycles 100 Figure 6. Maximum Non-repetitive Peak Forward Surge Current Average Forward Current, IF [A] 10 9 TL (Cathode, 3cm x 3cm Pad) 8 7 6 TA (3cm x 3cm Pad) 5 4 3 2 1 0 0 25 50 75 100 125 150 o Ambient / Lead Temperature, [ C] 175 Figure 7. Forward Current Derating Curve (c) 2015 Fairchild Semiconductor Corporation FSV8100V Rev. 1.2 www.fairchildsemi.com 3 FSV8100V -- 8 A, 100 V Ultra-Low VF Schottky Rectifier Typical Performance Characteristics A 6.65 6.35 6.15 5.67 B 4.63 D 4.25 0.63 0.43 (2X) TOP VIEW SEATING PLANE 0.01 4.65 MIN 1.40 1.10 (2X) 1.45 MIN 4.15 MIN 0.40 0.23 1.97 1.15 MIN 1.00 2.75 LAND PATTERN RECOMMENDATION 1.20 1.00 FRONT VIEW (0.35) C D 4.90 4.23 1.25 0.90 2.20 2.00 4.15 2.25 D 3.25 1.95 NOTES: UNLESS OTHERWISE SPECIFIED A. PACKAGE REFERENCE: JEDEC TO-277 B. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSIONS. C. ALL DIMENSIONS ARE IN MILLIMETERS. D DOES NOT COMPLY TO JEDEC STANDARD VALUE. E. DRAWING FILENAME: MKT-TO277A03rev5 0.913 3.680 (0.25) BOTTOM VIEW 0.60 DAP OPTION 4.75 MAX BOTTOM VIEW - DAP OPTION ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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