INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 10 September 2013. MIL-PRF-19500/485N 10 June 2013 SUPERSEDING MIL-PRF-19500/485M 1 June 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES: 2N5415, 2N5415S, 2N5415UA, 2N5415U4, 2N5416, 2N5416S, 2N5416UA, AND 2N5416U4, JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH, JANHCB, JANHCD, JANKCB, JANKCD, JANKCBM, JANKCBD, JANKCBP, JANKCBL, JANKCBR, JANKCBF, JANKCBG, AND JANKCBH This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for PNP, silicon, switching transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for JANTXV, JANS, JANHC, and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements. 1.2 Physical dimensions. See figure 1 (similar to TO-5), figures 2 and 3 for JANHC and JANKC (die) dimensions, figure 4 for UA package, and figure 5 for U4. 1.3 Maximum ratings. Unless otherwise specified, TA = +25C. Types 2N5415, S 2N5415UA 2N5415U4 2N5416, S 2N5416UA 2N5416U4 PT (1) PT (2) TC = +25C PT (3) TSP = +25C RJA TA = +25C W W W C/W C/W C/W V dc V dc V dc A dc 0.75 0.75 1 0.75 0.75 1 10 234 234 145 234 234 145 17.5 N/A 80 N/A N/A 80 N/A 200 200 200 350 350 350 200 200 200 300 300 300 6.0 6.0 6.0 6.0 6.0 6.0 1.0 1.0 1.0 1.0 1.0 1.0 2 15 10 2 15 RJC RJSP VCBO VCEO VEBO IC TSTG and TJ 12 17.5 12 C -65 to +200 (1) Derate linearly 4.29 mW/C for TA > +25C. 6.90 mW/C for U4. (2) Derate linearly 57.2 mW/C for TC > +25C. 86 mW/C for U4. (3) Derate linearly 12.5 mW/C for TSP > +25C. Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil . Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https://assist.dla.mil . AMSC N/A FSC 5961 Source: http://assist.dla.mil -- Downloaded: 2021-04-18T07:06Z Check the source to verify that this is the current version before use. MIL-PRF-19500/485N 1.4 Primary electrical characteristics. hFE1 Cobo hfe VBE VCE(sat) IC = 50 mA dc, (1) IE = 0 IC = 10 mA dc IC = 50 mA dc, (1) IC = 50 mA dc, (1) VCE = 10 V dc VCB = 10 V dc, 100 kHz f 1 MHz VCE = 10 V dc, f = 5 MHz VCE = 10 V dc IB = 5 mA dc V dc V dc 1.5 2.0 pF Min Max 30 120 3 15 15 (1) Pulsed (See 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at http://quicksearch.dla.mil or https://assist.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 2 Source: http://assist.dla.mil -- Downloaded: 2021-04-18T07:06Z Check the source to verify that this is the current version before use. MIL-PRF-19500/485N Dimensions Symbol Inches Millimeters Min Max Min Max CD .305 .335 7.75 8.51 CH .240 .260 6.10 6.60 HD .335 .370 8.51 9.40 LC LD .200 TP .016 LL LU 5.08 TP .021 0.41 6 0.53 See notes .016 .019 7, 8 7, 8, 11,12 0.41 .050 L1 Notes 0.48 7, 8 1.27 7, 8 L2 .250 6.35 7, 8 P .100 2.54 5 Q .050 1.27 4 r .010 0.25 10 TL .029 .045 0.74 1.14 3 TW .028 .034 0.71 0.86 2 45 TP 45 TP 6 NOTES: 1. Dimension are in inches. 2. Millimeters are given for general information only. 3. Beyond r (radius) maximum, TH shall be held for a minimum length of .011 inch (0.28 mm). 4. Dimension TL measured from maximum HD. 5. Body contour optional within zone defined by HD, CD, and Q. 6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within.007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. 7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is uncontrolled in L1 and beyond LL minimum. 8. All three leads. 9. The collector shall be internally connected to the case. 10. Dimension r (radius) applies to both inside corners of tab. 11. For transistor types 2N5415 and 2N5416, dimension LL shall be 1.5 inches (38.1 mm) minimum and 1.75 inches (44.4 mm) maximum. 12. For transistor types 2N5415S and 2N5416S, dimension LL shall be .5 inch (12.7 mm) minimum and .75 inch (19.0 mm) maximum. 13. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. 14. Lead 1 = emitter, lead 2 = base, lead 3 = collector. FIGURE 1. Physical dimensions (similar to TO-5). 3 Source: http://assist.dla.mil -- Downloaded: 2021-04-18T07:06Z Check the source to verify that this is the current version before use. MIL-PRF-19500/485N 1. 2. 3. 4. 5. 6. Chip size: Chip thickness: Top metal: Back metal: Backside: Bonding pad: .046 x .046 inch .002 inch (1.1684 x 1.1684 mm .0508 mm). .010 .0015 inch (.254 .0381 mm) nominal. Aluminum 30, 000 A minimum, 33, 000 A nominal. A. Gold 3, 500 A minimum, 5, 000 A nominal. Collector. B = .005 x .008 inch (.127 x .2032 mm), E = .010 x .007 inch (.254 x .1778 mm). FIGURE 2. JANHCB and JANKCB (B-version) die dimensions. 4 Source: http://assist.dla.mil -- Downloaded: 2021-04-18T07:06Z Check the source to verify that this is the current version before use. MIL-PRF-19500/485N E Die size: Die thickness: Base pad: Emitter pad: Back metal: Top metal: Back side: Glassivation: B .045 x .045 inch (1.143 x 1.143 mm). .008 .0016 inch (0.2032 0.04064 mm). .0085 x .00425 inch (0.2159 x 0.10795 mm). .004 x .0125 inch (0.1016 x 0.3175 mm). Gold, 6,500 1,950 A. Aluminum, 20,000 2,000 A. Collector. SiO2, 7,500 1,500 A. FIGURE 3. JANHCD and JANKCD (D-version) die dimensions. 5 Source: http://assist.dla.mil -- Downloaded: 2021-04-18T07:06Z Check the source to verify that this is the current version before use. MIL-PRF-19500/485N UA Symbol BL BL2 BW BW2 CH L3 LH Pin Number Transistor Dimensions Inches Millimeters Min Max Min Max .215 .225 5.46 5.71 .225 5.71 .145 .155 3.68 3.93 .155 3.93 .061 .075 1.55 1.91 .003 0.08 .029 .042 0.74 1.07 1 Collector Note Symbol LL1 LL2 LS LW LW2 3 5 2 Emitter Dimensions Inches Millimeters Min Max Min Max .032 .048 0.81 1.22 .072 .088 1.83 2.23 .045 .055 1.14 1.39 .022 .028 0.56 0.71 .006 .022 0.15 0.56 3 Base Note 5 4 N/C NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Dimension "CH" controls the overall package thickness. When a window lid is used, dimension "CH" must increase by a minimum of .010 inch (0.254 mm) and a maximum of .040 inch (1.016 mm). 4. The corner shape (square, notch, radius, etc.) may vary at the manufacturer's option, from that shown on the drawing. * 5. Dimensions "LW2" minimum and "L3" minimum and the appropriate castellation length define an unobstructed three-dimensional space traversing all of the ceramic layers in which a castellation was designed. (Castellations are required on bottom two layers, optional on top ceramic layer.) Dimension "LW2" maximum define the maximum width and depth of the castellation at any point on its surface. Measurement of this dimension may be made prior to solder dipping. 6. The coplanarity deviation of all terminal contact points, as defined by the device seating plane, shall not exceed .006 inch (0.15mm) for solder dipped leadless chip carriers. 7. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. * FIGURE 4. Physical dimensions, surface mount (UA version). 6 Source: http://assist.dla.mil -- Downloaded: 2021-04-18T07:06Z Check the source to verify that this is the current version before use. MIL-PRF-19500/485N U4 Symbol Dimensions Inches BL BW CH LH LL1 LL2 LS1 LS2 LW1 LW2 Q1 Q2 Min .215 .145 .049 .085 .045 .070 .035 .135 .047 .030 .020 Max .225 .155 .075 .020 .125 .075 .095 .048 .145 .057 .070 .035 Min 5.46 3.68 1.24 2.16 1.14 1.78 0.89 3.43 1.19 0.76 0.51 Millimeters Max 5.71 3.94 1.90 0.508 3.17 1.91 2.41 1.22 3.68 1.45 1.78 0.89 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Terminal 1 is collector. 4. Terminal 2 is base. 5. Terminal 3 is emitter. 6. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 5. Physical dimensions, surface mount (2N5415U4, 2N5416U4) version (U4) (SMD-.22). 7 Source: http://assist.dla.mil -- Downloaded: 2021-04-18T07:06Z Check the source to verify that this is the current version before use. MIL-PRF-19500/485N 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows. RJA ........................ Thermal resistance junction to ambient. RJC ........................ Thermal resistance junction to case. RJSP ........................Thermal resistance junction to solder pads. TSP ..........................Temperature of solder pads. 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500 and on figures 1, 2, 3, 4, and 5 herein. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.4.2 Construction. These devices shall be constructed in a manner and using materials which enable the devices to meet the applicable requirements of MIL-PRF-19500 and this document. 3.5 Radiation hardness assurance (RHA). Radiation hardness assurance requirements, PIN designators, and test levels shall be as defined in MIL-PRF-19500. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I and II. 3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I and II herein. 3.8 Marking. Marking shall be in accordance with MIL-PRF-19500. The radiation hardened designator M, D, P, L, R, F, G, or H shall immediately precede (or replace) the device "2N" identifier (depending upon degree of abbreviation required). 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and tables I, II, and III). 8 Source: http://assist.dla.mil -- Downloaded: 2021-04-18T07:06Z Check the source to verify that this is the current version before use. MIL-PRF-19500/485N 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. 4.2.2 JANHC and JANKC die. Qualification for die shall be in accordance with MIL-PRF-19500. 4.3 Screening (list applicable JAN levels). Screening shall be in accordance with table E-IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of MIL-PRF-19500) Measurement JANS level (1) 3c JANTX and JANTXV levels Thermal impedance method 3131 of MIL-STD-750, see 4.3.2. Thermal impedance method 3131 of MIL-STD-750, see 4.3.2. 9 ICEX and hFE1 Not applicable. 10 48 hours minimum. 48 hours minimum. 11 ICEX , hFE1 ICEX = 100 percent of initial value or 2.5 A dc, whichever is greater; hFE1 = 15 percent of initial value. ICEX and hFE1 12 See 4.3.1. See 4.3.1. 13 Subgroups 2 and 3 of table I herein; ICEX = 100 percent of initial value or 2.5 A dc, whichever is greater; hFE1 = 15 percent of initial value. Subgroup 2 of table I herein; ICEX = 100 percent of initial value or 2.5 A dc, whichever is greater; hFE1 = 20 percent of initial value. (1) Shall be performed any time after temperature cycling, screen 3a; JANTX and JANTXV levels do not need to be repeated in screening requirements. 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: Method 1039 of MIL-STD-750, test condition B, VCB = 10 - 30 V dc. Power shall be applied to achieve TJ = +135C minimum using a minimum PD = 75 percent of PT maximum rated as defined in 1.3. With approval of the qualifying activity and preparing activity, alternate burn-in criteria (hours, bias conditions, TJ, and mounting conditions) may be used for JANTX and JANTXV quality levels. A justification demonstrating equivalence is required. In addition, the manufacturing site's burn-in data and performance history will be essential criteria for burn-in modification approval. 9 Source: http://assist.dla.mil -- Downloaded: 2021-04-18T07:06Z Check the source to verify that this is the current version before use. MIL-PRF-19500/485N 4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW (VC and VH where appropriate). Measurement delay time (tMD) = 70 s max. See table II, group E, subgroup 4 and figures 6, 7, and 8 herein. 4.3.3 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with MIL-PRF-19500, "Discrete Semiconductor Die/Chip Lot Acceptance". Burn-in duration for the JANKC level follows JANS requirements; the JANHC follows JANTX requirements. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as specified herein. If alternate screening is being performed per MIL-PRF-19500, a sample of screened devices shall be submitted to and pass the requirements of group A1 and A2 inspection only (table VIb, group B, subgroup 1 is not required to be performed again if group B has already been satisfied in accordance with 4.4.2). 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I herein. Electrical measurements (end-points) shall be in accordance with the applicable inspections of table I, subgroup 2 herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table E-VIa (JANS) of MIL-PRF-19500 and 4.4.2.1 herein. Electrical measurements (end-points) requirements shall be in accordance with table I, subgroup 2 herein. See 4.4.2.2 for JAN, JANTX, and JANTXV group B testing. Electrical measurements (end-points) for JAN, JANTX, and JANTXV shall be after each step in 4.4.2.2 and shall be in accordance with table I, subgroup 2 herein. 4.4.2.1 Group B inspection, table E-VIa (JANS) of MIL-PRF-19500. Subgroup Method Conditions B4 1037 VCB = 10 V dc; 2,000 cycles. Adjust device current, or power, to achieve a minimum TJ of 100C. B5 1027 (NOTE: If a failure occurs, resubmission shall be at the test conditions of the original sample.) VCB = 10 V dc, PD 100 percent of maximum rated PT (see 1.3). Option 1: 96 hours minimum sample size in accordance with table E-VIa of MIL-PRF-19500, adjust TA or PD to achieve TJ = +275C minimum. Option 2: 216 hours minimum, sample size = 45, c = 0; adjust TA or PD to achieve TJ = +225C minimum. 10 Source: http://assist.dla.mil -- Downloaded: 2021-04-18T07:06Z Check the source to verify that this is the current version before use. MIL-PRF-19500/485N 4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the event of a lot failure, the resubmission requirements of MIL-PRF-19500 shall apply. In addition, all catastrophic failures during CI shall be analyzed to the extent possible to identify root cause and corrective action. Step Method Conditions 1 1026 Steady-state life: 1,000 hours minimum, VCB = 10 V dc, power shall be applied to achieve TJ = +150C minimum using a minimum of PD = 75 percent of maximum rated PT as defined in 1.3. n = 45 devices, c = 0. The sample size may be increased and the test time decreased as long as the devices are stressed for a total of 45,000 device hours minimum, and the actual time of test is at least 340 hours. 2 1048 Blocking life, TA = +150C, VCB = 80 percent of rated voltage, 48 hours minimum. n = 45 devices, c = 0. 3 1032 High-temperature life (non-operating), t = 340 hours, TA = +200C. n = 22, c = 0. 4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following requirements: a. For JAN, JANTX, and JANTXV samples shall be selected randomly from a minimum of three wafers (or from each wafer in the lot) from each wafer lot. For JANS, samples shall be selected from each inspection lot. See MIL-PRF-19500. b. Shall be chosen from an inspection lot that has been submitted to and passed table I, subgroup 2, conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for life test (subgroups B4 and B5 for JANS, and group B for JAN, JANTX, and JANTXV) may be pulled prior to the application of final lead finish. 4.4.3 Group C inspection, Group C inspection shall be conducted in accordance with the test and conditions specified for subgroup testing in table E-VII of MIL-PRF-19500, and in 4.4.3.1 (JANS ) and 4.4.3.2 (JAN, JANTX, and JANTXV) herein for group C testing. Electrical measurements (end-points) requirements shall be in accordance with table I, subgroup 2 herein. 4.4.3.1 Group C inspection (JANS), table E-VII of MIL-PRF-19500. Subgroup Method Condition C2 2036 Test condition E; (not applicable for UA and U4 devices). C5 3131 RJA and RJC only, as applicable (see 1.3) and in accordance with thermal impedance curves. C6 1026 VCB = 10 - 30 V dc; power shall be applied to achieve TJ = +150C minimum and a minimum of PD = 75 percent of maximum rated PT as defined in 1.3. n = 45 devices, c = 0. The sample size may be increased and the test time decreased as long as the devices are stressed for a total of 45,000 device hours minimum, and the actual time of test is at least 340 hours. 11 Source: http://assist.dla.mil -- Downloaded: 2021-04-18T07:06Z Check the source to verify that this is the current version before use. MIL-PRF-19500/485N 4.4.3.2 Group C inspection (JAN, JANTX, and JANTXV), table E-VII of MIL-PRF-19500. Subgroup Method Condition C2 2036 Test condition E; not applicable for UA and U4 devices. C5 3131 RJA and RJC only, as applicable (see 1.3 and 4.3.2) and in accordance with thermal impedance curves. C6 Not applicable. 4.4.3.3 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any inspection lot containing the intended package type and lead finish procured to the same specification which is submitted to and passes group A tests for conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for C6 life test may be pulled prior to the application of final lead finish. Testing of a subgroup using a single device type enclosed in the intended package type shall be considered as complying with the requirements for that subgroup. 4.4.4 Group D inspection. Conformance inspection for hardness assured JANS and JANKC types shall include the group D tests specified in table II herein. These tests shall be performed as required in accordance with MIL-PRF-19500 and method 1019 of MIL-STD-750, for total ionizing dose or method 1017 of MIL-STD-750 for neutron fluence as applicable (see 6.2 herein), except group D, subgroup 2 may be performed separate from other subgroups. Alternate package options may also be substituted for the testing provided there is no adverse effect to the fluence profile. 4.4.5 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table II herein. Electrical measurements (endpoints) shall be in accordance with table I, subgroup 2 herein. 4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 12 Source: http://assist.dla.mil -- Downloaded: 2021-04-18T07:06Z Check the source to verify that this is the current version before use. MIL-PRF-19500/485N TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Symbol Min Method Limits Max Unit Conditions Subgroup 1 2/ Visual and mechanical 3/ examination 2071 Solderability 3/ 4/ 2026 n = 15 leads, c = 0 Resistance to solvents 3/ 4/ 5/ 1022 n = 15 devices, c = 0 Temp cycling 3/ 4/ 1051 Test condition C, 25 cycles. n = 22 devices, c = 0 Hermetic seal 4/ Fine leak Gross leak 1071 n = 22 devices, c = 0 Table I, subgroup 2 Electrical measurements 4/ Bond strength 3/ 4/ 2037 Precondition TA = +250C at t = 24 hrs or TA = +300C at t = 2 hrs n = 11 wires, c = 0 2075 n = 4, c = 0. Thermal impedance 6/ 3131 See 4.3.2 ZJX Collector to emitter cutoff current 3041 Bias condition D ICE01 50 A dc ICE02 1 mA dc ICEX 50 A dc IEBO 20 A dc Decap internal visual design verification Subgroup 2 2N5415, S, UA, U4 VCE = 150 V dc 2N5416, S, UA, U4 VCE = 250 V dc Collector to emitter cutoff current 3041 2N5415, S, UA, U4 2N5416, S, UA, U4 Bias condition D C/W VCE = 200 V dc VCE = 300 V dc Collector to emitter cutoff current 3041 Bias condition A, VBE = 1.5 V dc VCE = 200 V dc 2N5415, S, UA, U4 2N5416, S, UA, U4 VCE = 300 V dc Emitter to base cutoff current 3061 Bias condition D, VEB = 6 V dc See footnotes at end of table. 13 Source: http://assist.dla.mil -- Downloaded: 2021-04-18T07:06Z Check the source to verify that this is the current version before use. MIL-PRF-19500/485N TABLE I. Group A inspection - Continued. Inspection 1/ Method MIL-STD-750 Conditions Symbol Min Limits Max Unit Subgroup 2 - Continued. Collector to base cutoff current 3036 2N5415, S, UA, U4 Bias condition D ICBO1 50 A dc ICBO2 500 A dc VCB = 175 V dc VCB = 280 V dc 2N5416, S, UA, U4 Collector to base cutoff current 3036 2N5415, S, UA, U4 2N5416, S, UA, U4 Bias condition D VCB = 200 V dc VCB = 350 V dc Forward-current transfer ratio 3076 VCE = 10 V dc, IC = 50 mA dc, pulsed (see 4.5.1) hFE1 30 Forward-current transfer ratio 3076 VCE = 10 V dc, hFE2 15 120 IC = 1 mA dc, pulsed (see 4.5.1) Collector to emitter voltage (saturated) 3071 IC = 50 mA dc, IB = 5 mA dc, pulsed (see 4.5.1) Base emitter voltage saturation 3066 Test condition B, VCE = 10 V dc, IC = 50 mA dc, pulsed (see 4.5.1) VCE(sat) 2.0 V dc VBE 1.5 V dc ICB03 1 mA dc Subgroup 3 High temperature operation: Collector to base cutoff current TA = +150C 3036 Bias condition D 2N5415, S, UA, U4 VCB = 175 V dc 2N5416, S, UA, U4 VCE = 280 V dc Low temperature operation: TA = -65C Forward-current transfer ratio 3076 VCE = 10 V dc, IC = 50 mA dc, pulsed (see 4.5.1) hFE3 15 Small-signal short- circuit forwardcurrent transfer ratio 3306 VCE = 10 V dc, IC = 10 mA dc, f = 5 MHz hfe 3 Small-signal short- circuit forwardcurrent transfer ratio 3206 VCE = 10 V dc, IC = 5 mA dc, f < 1 kHz hfe 25 Open circuit output capacitance 3236 VCB = 10 V dc, IE = 0, 100 kHz < f < 1 MHz Cobo 15 pF Input capacitance (output opencircuited) 3240 VEB = 5 V dc, IC = 0, 100 kHz < f < 1 MHz Cibo 75 pF Subgroup 4 See footnotes at end of table. 14 Source: http://assist.dla.mil -- Downloaded: 2021-04-18T07:06Z Check the source to verify that this is the current version before use. 15 MIL-PRF-19500/485N TABLE I. Group A inspection - Continued. Inspection 1/ Method MIL-STD-750 Conditions Symbol Min Limits Max Unit Subgroup 5 Pulse response 3251 Test condition A Turn-on time VCC = 200 V dc, IC = 50 mA dc, IB1 = 5 mA dc, (see figure 9). ton 1 s Turn-off time VCC = 200 V dc, IC = 50 mA dc, IB1 = IB2 = 5 mA dc, (see figure 9). toff 10 s Subgroup 6 Not applicable Subgroup 7 Breakdown voltage, collector to emitter 3011 IC = 50 mA dc, IB = 5 mA dc, L = 25 mH; f = 30 - 60 Hz, (see figure 10). V(BR)CEO 2N5415, S, UA, U4 2N5416, S, UA, U4 Safe operating area (continuous dc) 200 300 3051 V dc V dc TC = +25C, 1 cycle, t = 0.4 s, (see figures 11, 12, and 13). n = 22, c = 0 Test 1 (except UA) Test 2 (except UA) Test 3 (except UA) (2N5415, S, U4 only) Test 4 (2N5416, S, U4 only) VCE = 10 V dc, IC = 1 A dc. VCE = 100 V dc, IC = 100 mA dc. VCE = 200 V dc. IC = 24 mA dc. VCE = 300 V dc. IC = 10 mA dc. Test 1 UA only Test 2 UA only Test 3 UA only (2N5415UA only) Test 4 (2N5416UA only) VCE = 10 V dc, IC = 0.3 A dc. VCE = 100 V dc, IC = 30 mA dc. VCE = 200 V dc. IC = 12 mA dc. VCE = 300 V dc. IC = 5 mA dc. Electrical measurements See table I, subgroup 2 herein. 1/ For sampling plan see MIL-PRF-19500. 2/ For resubmission of failed subgroup 1, double the sample size of the failed test or sequence of tests. A failure in table I, subgroup 1 shall not require retest of the entire subgroup. Only the failed test shall be rerun upon submission. 3/ Separate samples may be used. 4/ Not required for JANS devices. 5/ Not required for laser marked devices. 6/ This test required for the following end-point measurements only: Group B, step 1 of 4.4.2.2 herein (JAN, JANTX, and JANTXV). Group B, subgroups 3, 4, and 5 (JANS). Group C, subgroup 2 and 6. Group E, subgroup 1 and 2. 15 Source: http://assist.dla.mil -- Downloaded: 2021-04-18T07:06Z Check the source to verify that this is the current version before use. MIL-PRF-19500/485N TABLE II. Group D inspection. Inspection 1/ 2/ 3/ MIL-STD-750 Symbol Min Method Limits Max Unit Conditions Subgroup 1 4/ Neutron irradiation 1017 Neutron exposure Vces = 0 V Collector to emitter cutoff current 3041 Bias condition D 2N5415, S, UA, U4 VCE = 150 V dc 2N5416, S, UA, U4 VCE = 250 V dc Collector to emitter cutoff current 3041 Bias condition D 2N5415, S, UA, U4 VCE = 200 V dc 2N5416, S, UA, U4 VCE = 300 V dc Collector to emitter cutoff current 3041 Bias condition D, VBE = 1.5 V dc 2N5415, S, UA, U4 VCE = 200 V dc 2N5416, S, UA, U4 VCE = 300 V dc ICE01 100 A dc ICE02 2 mA dc ICEX 100 A dc Emitter to base cutoff current 3061 Bias condition D, VEB = 6 V dc IEBO 40 A dc Collector to base cutoff current 3036 Bias condition D ICBO1 100 A dc ICBO2 1 mA dc 2N5415, S, UA, U4 VCB = 175 V dc VCB = 280 V dc 2N5416, S, UA, U4 Collector to base cutoff current 3036 2N5415, S, UA, U4 Bias condition D VCB = 200 V dc VCB = 350 V dc 2N5416, S, UA, U4 Forward-current transfer ratio 3076 VCE = 10 V dc, IC = 50 mA dc, pulsed (see 4.5.1) [hFE1] 5/ [15] Forward-current transfer ratio 3076 VCE = 10 V dc, [hFE2 ] 5/ [7.5] 120 IC = 1 mA dc, pulsed (see 4.5.1) Collector to emitter voltage (saturated) 3071 IC = 50 mA dc, IB = 5 mA dc, pulsed (see 4.5.1) Base emitter voltage saturation 3066 Test condition B, VCE = 10 V dc, IC = 50 mA dc, pulsed (see 4.5.1) VCE(sat) 2.3 V dc VBE 1.73 V dc See footnotes at end of table. 16 Source: http://assist.dla.mil -- Downloaded: 2021-04-18T07:06Z Check the source to verify that this is the current version before use. MIL-PRF-19500/485N TABLE II. Group D inspection - Continued Inspection 1/ 2/ 3/ MIL-STD-750 Symbol Min Method Limits Max Unit Conditions Subgroup 2 Total dose irradiation 2N5415 1019 2N5416 Gamma exposure Vces = 160V Vces = 240V Collector to emitter cutoff current 3041 Bias condition D 2N5415, S, UA, U4 VCE = 150 V dc 2N5416, S, UA, U4 VCE = 250 V dc Collector to emitter cutoff current 3041 Bias condition D 2N5415, S, UA, U4 VCE = 200 V dc 2N5416, S, UA, U4 VCE = 300 V dc Collector to emitter cutoff current 3041 Bias condition D, VBE = 1.5 V dc 2N5415, S, UA, U4 VCE = 200 V dc 2N5416, S, UA, U4 VCE = 300 V dc ICE01 100 A dc ICE02 2 mA dc ICEX 100 A dc Emitter to base cutoff current 3061 Bias condition D, VEB = 6 V dc IEBO 40 A dc Collector to base cutoff current 3036 Bias condition D ICBO1 100 A dc ICBO2 1 mA dc 2N5415, S, UA, U4 VCB = 175 V dc VCB = 280 V dc 2N5416, S, UA, U4 Collector to base cutoff current 3036 2N5415, S, UA, U4 Bias condition D VCB = 200 V dc VCB = 350 V dc 2N5416, S, UA, U4 Forward-current transfer ratio 3076 VCE = 10 V dc, IC = 50 mA dc, pulsed (see 4.5.1) [hFE1] 5/ [15] Forward-current transfer ratio 3076 VCE = 10 V dc, [hFE2 ] 5/ [7.5] 120 IC = 1 mA dc, pulsed (see 4.5.1) 1/ 2/ 3/ 4/ 5/ Collector to emitter voltage (saturated) 3071 Base emitter voltage saturation 3066 IC = 50 mA dc, IB = 5 mA dc, pulsed (see 4.5.1) Test condition B, VCE = 10 V dc, IC = 50 mA dc, pulsed (see 4.5.1) VCE(sat) 2.3 V dc VBE 1.73 V dc Tests to be performed on all devices receiving radiation exposure. For sampling plan, see MIL-PRF-19500. Electrical characteristics apply to all device types unless otherwise noted. See 6.2.e herein. See method 1019 of MIL-STD-750 for how to determine [hFE] by first calculating the delta(1/hFE) from the pre and post radiation hFE. Notice that [hFE] is not the same as hFE and cannot be measured directly. The [hFE] value can never exceed the pre-radiation minimum hFE that it is based upon. 17 Source: http://assist.dla.mil -- Downloaded: 2021-04-18T07:06Z Check the source to verify that this is the current version before use. MIL-PRF-19500/485N TABLE III. Group E inspection (all quality levels) - for qualification or requalification only. Inspection MIL-STD-750 Method Qualification Conditions 45 devices c=0 Subgroup 1 Temperature cycling (air to air) 1051 Hermetic seal 1071 Test condition C, 500 cycles. Fine leak Gross leak Electrical measurements See table I, subgroup 2 herein. Subgroup 2 Intermittent life 45 devices c=0 1037 Electrical measurements VCB = 10 V dc, 6,000 cycles. Adjust device current, or power, to achieve a minimum TJ of +100C. See table I, subgroup 2 herein. Subgroup 4 Thermal resistance 15 devices, c=0 3131 Thermal impedance curves RJSP can be calculated but shall be measured once in the same package with a similar die size to confirm calculations (may apply to multiple specification sheets). See MIL-PRF-19500, table E-IX, group E, subgroup 4. Subgroup 5 Barometric pressure reduced (altitude operation). 15 devices c=0 1001 Normal mounting; pressure = 8 mm Hg for 60 seconds minimum. Subgroup 6 ESD 11 devices 1020 45 devices c=0 Subgroup 8 Reverse stability 1033 Condition A for devices 400 V dc. Condition B for devices < 400 V dc. 18 Source: http://assist.dla.mil -- Downloaded: 2021-04-18T07:06Z Check the source to verify that this is the current version before use. MIL-PRF-19500/485N Maximum Thermal Impedance 46x46 Chip, SMD.22 (U4) Pkg, Tc=25C 100 Theta (C/W) 10 1 0.1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 Time (s) FIGURE 6. Thermal impedance graph (RJC) for 2N54115 and 2N5416 (U4). 19 Source: http://assist.dla.mil -- Downloaded: 2021-04-18T07:06Z Check the source to verify that this is the current version before use. 10 MIL-PRF-19500/485N Maximum Thermal Impedance 2N5416 in Kovar TO-5/TO-39 with Moly Tab Tc=25C 100 Theta (C/W) 10 1 0.1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 Time (s) FIGURE 7. Thermal impedance graph (RJC) for 2N54115 and 2N5416 (TO-5). 20 Source: http://assist.dla.mil -- Downloaded: 2021-04-18T07:06Z Check the source to verify that this is the current version before use. 100 MIL-PRF-19500/485N Maximum Thermal Impedance 2N5416 in Kovar TO-5/TO-39 with Moly Tab Ta=25C 1000 Theta (C/W) 100 10 1 0.1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Time (s) FIGURE 8. Thermal impedance graph (RJA) for 2N54115 and 2N5416 (TO-5). 21 Source: http://assist.dla.mil -- Downloaded: 2021-04-18T07:06Z Check the source to verify that this is the current version before use. 1000 MIL-PRF-19500/485N NOTES: 1. The rise time (tr) and fall time (tf) of applied pulse shall be each < 20 ns; duty cycle < 2 percent; generator source impedance shall be 50 ; pulse width = 20 s. 2. Output sampling oscilloscope: Zin > 100 k; Cin < 50 pF; rise time < 2 ns. FIGURE 9. Pulse response test circuit. 22 Source: http://assist.dla.mil -- Downloaded: 2021-04-18T07:06Z Check the source to verify that this is the current version before use. MIL-PRF-19500/485N NOTES: 1. L = 25 mH, Q = 76, R = 83.4 , I = 75 mA (J.W. Miller number 6308 or equivalent). 2. BVCEO is acceptable when the trace falls to the right and above point "A" for type 2N5415. The trace shall fall to the right and above point "B" for type 2N5416. FIGURE 10. BVCEO measurement test circuit. 23 Source: http://assist.dla.mil -- Downloaded: 2021-04-18T07:06Z Check the source to verify that this is the current version before use. MIL-PRF-19500/485N SOA Power Curve - Safe Operating Area Tj=200C 2N5416, 2N5415 ss485 TO-5KM at Ta=25C 10 Current (A) 1 0.1 1us 10us 100us 0.01 1ms 10ms 100ms 400ms Top = 25C Tjmax = 200C DC 0.001 1 10 100 Voltage (V) FIGURE 11. Maximum safe operating graph (continuous dc). 24 Source: http://assist.dla.mil -- Downloaded: 2021-04-18T07:06Z Check the source to verify that this is the current version before use. 1000 MIL-PRF-19500/485N SOA Power - Safe Operating Area Tj=200C 2N5416U4, 2N5415U4 ss485 on Copper Sink Tc=25C 10 Current (A) 1 0.1 1us 10us 100us 0.01 1ms 10ms 100ms 400ms Top = 25C Tjmax = 200C DC 0.001 1 10 100 Voltage (V) FIGURE 12. Maximum safe operating graph (continuous dc). 25 Source: http://assist.dla.mil -- Downloaded: 2021-04-18T07:06Z Check the source to verify that this is the current version before use. 1000 MIL-PRF-19500/485N SOA Power - Safe Operating Area Tj=200C 2N5416UA, U4, 2N5415UA, U4 ss485 on PCB Ta=25C 10 Current (A) 1 0.1 1us 10us 100us 0.01 1ms 10ms 100ms 400ms Top = 25C Tjmax = 200C DC 0.001 1 10 100 Voltage (V) FIGURE 13. Maximum safe operating graph (continuous dc). 26 Source: http://assist.dla.mil -- Downloaded: 2021-04-18T07:06Z Check the source to verify that this is the current version before use. 1000 MIL-PRF-19500/485N 5. PACKAGING 5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). When packaging of materiel is to be performed by DoD or in-house contractor personnel, these personnel need to contact the responsible packaging activity to ascertain packaging requirements. Packaging requirements are maintained by the Inventory Control Point's packaging activities within the Military Service or Defense Agency, or within the Military Service's system commands. Packaging data retrieval is available from the managing Military Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory. The notes specified in MIL-PRF-19500 are applicable to this specification.) 6.1 Intended use. Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment. 6.2 Acquisition requirements. Acquisition documents should specify the following: a. Title, number, and date of this specification. b. Packaging requirements (see 5.1). c. Lead finish (see 3.4.1). d. Product assurance level and type designator. e. For acquisition of RHA designated devices, table II, subgroup 1 testing of group D is optional. If subgroup 1 testing is desired, it should be specified in the contract. 6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers List (QML 19500) whether or not such products have actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the products covered by this specification. Information pertaining to qualification of products may be obtained from DLA Land and Maritime, ATTN: /VQE, P.O. Box 3990, Columbus, OH 43218-3990 or e-mail vqe.chief@dla.mil . An online listing of products qualified to this specification may be found in the Qualified Products Database (QPD) at https://assist.dla.mil. 6.4 Suppliers of JANHC and JANKC die. The qualified JANHC and JANKC suppliers with the applicable letter version (example, JANHCA2N5415) will be identified on the QPL. JANC ordering information Manufacturers CAGE PIN 34156 43611 2N5415 JANHCD2N5415 JANKCD2N5415 JANHCD2N5416 JANKCD2N5416 JANHCB2N5415 JANKCB2N5415 JANHCB2N5416 JANKCB2N5416 2N5416 27 Source: http://assist.dla.mil -- Downloaded: 2021-04-18T07:06Z Check the source to verify that this is the current version before use. MIL-PRF-19500/485N 6.5 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where changes from the previous issue were made. This was done as a convenience only and the Government assumes no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the requirements of this document based on the entire content irrespective of the marginal notations and relationship to the last previous issue. Custodians: Army - CR Navy - EC Air Force - 85 DLA - CC Preparing activity: DLA - CC (Project 5961-2013-020) Review activities: Army - AR, MI Air Force - 19, 99 NOTE: The activities listed above were interested in this document as of the date of this document. Since organizations and responsibilities can change, you should verify the currency of the information above using the ASSIST Online database at https://assist.dla.mil. 28 Source: http://assist.dla.mil -- Downloaded: 2021-04-18T07:06Z Check the source to verify that this is the current version before use.