MIL-PRF-19500/485N
10 June 2013
SUPERSEDING
MIL-PRF-19500/485M
1 June 2010
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER
TYPES: 2N5415, 2N5415S, 2N5415UA, 2N5415U4, 2N5416, 2N5416S, 2N5416UA,
AND 2N5416U4, JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL,
JANSR, JANSF, JANSG, JANSH, JANHCB, JANHCD, JANKCB, JANKCD, JANKCBM,
JANKCBD, JANKCBP, JANKCBL, JANKCBR, JANKCBF, JANKCBG, AND JANKCBH
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for PNP, silicon, switching transistors. Four
levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product
assurance are provided for each unencapsulated device type. Provisions for radiation hardness assurance (RHA) to
eight radiation levels is provided for JANTXV, JANS, JANHC, and JANKC product assurance levels. RHA level
designators “M”, “D”, “P“, “L”, “R”, “F”, “G”, and “H” are appended to the device prefix to identify devices, which have
passed RHA requirements.
1.2 Physical dimensions. See figure 1 (similar to TO-5), figures 2 and 3 for JANHC and JANKC (die) dimensions,
figure 4 for UA package, and figure 5 for U4.
1.3 Maximum ratings. Unless otherw ise spe cif ied, T A = +25°C.
Types
PT (1)
TA = +25°C
PT (2)
TC = +25°C
PT (3)
TSP = +25°C
RθJA
RθJC
RθJSP
VCBO
VCEO
VEBO
IC
TSTG
and TJ
2N5415, S
2N5415UA
2N5415U4
2N5416, S
2N5416UA
2N5416U4
W
0.75
0.75
1
0.75
0.75
1
W
10
15
10
15
W
2
2
°C/W
234
234
145
234
234
145
°C/W
17.5
12
17.5
12
°C/W
N/A
80
N/A
N/A
80
N/A
V dc
200
200
200
350
350
350
V dc
200
200
200
300
300
300
V dc
6.0
6.0
6.0
6.0
6.0
6.0
A dc
1.0
1.0
1.0
1.0
1.0
1.0
°C
-65 to
+200
(1) Derate linearly 4.29 mW/°C for TA > +25°C. 6.90 mW/ °C for U4.
(2) Derate linearly 57.2 mW/°C for TC > +25°C. 86 mW/ °C for U4.
(3) Derate linearly 12.5 mW/°C for TSP > +25°C.
AMSC N/A FSC 5961
INCH-POUND
Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil . Since
contact infor mation can change, you may want to verify the currency of this address information using the
ASSIST Online database at https://assist.dla.mil .
The documentation and process conversion measures
necessary to comply with this document shall be
completed by 10 September 2013.
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MIL-PRF-19500/485N
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1.4 Primary electrical charact er ist ic s.
h
FE1
C
obo
h
fe
V
BE
VCE(sat)
I
C
= 50 mA dc,
(1)
I
E
= 0
I
C
= 10 mA dc
I
C
= 50 mA dc,
(1)
I
C
= 50 mA dc,
(1)
VCE = 10 V dc
VCB = 10 V dc,
VCE = 10 V dc,
VCE = 10 V dc
IB = 5 mA dc
100 kHz ≤ f ≤ 1 MHz
f = 5 MHz
pF
V dc
V dc
Min
30
3
Max
120
15
15
1.5
2.0
(1) Pulsed (See 4.5.1).
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this
specification, whether or not they are listed.
2.2 Government document s.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-750 - Test Methods for Semiconductor Devices.
* (Copies of these documents are available online at http://quicksearch.dla.mil or https://assist.dla.mil or fr om the
Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the
text of this document and the references cited herein, the text of this document takes precedence. Nothing in this
document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
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MIL-PRF-19500/485N
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Dimensions
Symbol
Inches
Millimeters
Notes
Min
Max
Min
Max
CD
.305
.335
7.75
8.51
CH
.240
.260
6.10
6.60
HD
.335
.370
8.51
9.40
LC
.200 TP
5.08 TP
6
LD
.016
.021
0.41
0.53
7, 8
LL
See notes
7, 8, 11,12
LU
.016
.019
0.41
0.48
7, 8
L1
.050
1.27
7, 8
L2
.250
6.35
7, 8
P
.100
2.54
5
Q
.050
1.27
4
r
.010
0.25
10
TL
.029
.045
0.74
1.14
3
TW
.028
.034
0.71
0.86
2
α
45° TP
45° TP
6
NOTES:
1. Dimension are in inches.
2. Millimeters are given for general infor mat ion only .
3. Beyond r (radius) maximum, TH shall be held for a minimum length of .011 inch (0.28 mm).
4. Dimension TL measured from maximum HD.
5. Body contour optional within zone defined by HD, CD, and Q.
6. Leads at gauge pl ane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within.007
inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC.
7. Dimension LU applies between L1 and L2. Dimens ion LD appl i es betw een L2 and LL minimum. Diameter is
uncontrol led in L1 and beyond LL minimum.
8. All three leads.
9. The collector shall be internally connected to the case.
10. Dimension r (radius) applies to both inside corners of tab.
11. For tran sistor ty pes 2N5415 and 2N5416, dimension LL shall be 1.5 inches (38.1 mm) minimum and 1.75
inches (44.4 mm) maximum.
12. For transistor ty pes 2N5415S and 2N5416S, dimension LL shall be .5 inch (12.7 mm) minimum and .75 inch
(19.0 mm) maximum .
13. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
14. Lead 1 = emitter, lead 2 = base, lead 3 = collector.
FIGURE 1. Physical dimensio ns (sim ilar to T O -5).
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MIL-PRF-19500/485N
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1. Chip size: .046 x .046 inch ±.002 inch (1.1684 x 1.1684 mm ±.0508 mm) .
2. Chip thickness: .010 ±.0015 inch (.254 ±. 0381 mm) nom ina l.
3. Top metal: Aluminum 30, 000 Å minimum, 33, 000 Å nominal.
4. Back metal: A. Gold 3, 500 Å minimum, 5, 000 Å nominal.
5. Backside: Collector.
6. Bonding pad: B = .005 x .008 inch (.127 x .2032 mm), E = .010 x .007 inch (.254 x .1778 mm).
FIGURE 2. JANHCB and JANKCB (B-version) die dimen sio ns.
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MIL-PRF-19500/485N
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Die size: .045 x .045 inch (1.143 x 1.143 mm).
Die thickness: .008 ±.0016 inch (0.2032 ±0.04064 mm).
Base pad: .0085 x .00425 inch (0.2159 x 0.10795 mm).
Emitter pad: .004 x .0125 inch (0.1016 x 0.3175 mm).
Back metal: Gold, 6,500 ±1,950 Å.
Top metal: Aluminum, 20,000 ±2,000 Å.
Back side: Collector.
Glassivation: SiO2, 7,500 ±1,500 Å.
FIGURE 3. JANHCD and JANKCD (D-version) die dimensions.
E E
B
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MIL-PRF-19500/485N
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Dimensions
Dimensions
Symbol
Inches
Millimeters
Note
Inches
Millimeters
Note
Min
Max
Min
Max
Min
Max
Min
Max
BL
.215
.225
5.46
5.71
.032
.048
0.81
1.22
BL2
.225
5.71
.072
.088
1.83
2.23
BW
.145
.155
3.68
3.93
.045
.055
1.14
1.39
BW2
.155
3.93
.022
.028
0.56
0.71
CH
.061
.075
1.55
1.91
3
.006
.022
0.15
0.56
5
L3
.003
0.08
5
LH
.029
.042
0.74
1.07
Pin Number
1
2
3
4
Transistor
Collector
Emitter
Base
N/C
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Dimension "CH" controls the overall package thickness. When a window lid is used, dimension "CH" must
increase by a minimum of .010 inch (0.254 mm) and a maximum of .040 inch (1.016 mm).
4. The corner shape (square, notch, radius, etc.) may vary at the manufacturer's option, from that shown on the
drawing.
* 5. Dimensions "LW2" minimum and "L3" minimum and the appropriate castellation length define an unobstructed
three-dimensional space traversing all of the ceramic layers in which a castellation was designed.
(Castellations are required on bottom two layers, optional on top ceramic layer.) Dimension "LW2" maximum
define the maximum width and depth of the castellation at any point on its surface. Measurement of this
dimension may be made pr ior to solder dip pin g.
6. The coplanarity deviation of all terminal contact points, as defined by the device seating plane, shall not exceed
.006 inch (0.15mm) for solder dipped leadless chip carriers.
7. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
* FIGURE 4. Physical dimensions, surface mount (UA version).
UA
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Symbol Dimensions
Inches
Millimeters
Min
Max
Min
Max
BL
.215
.225
5.46
5.71
BW
.145
.155
3.68
3.94
CH
.049
.075
1.24
1.90
LH
.020
0.508
LL1
.085
.125
2.16
3.17
LL2
.045
.075
1.14
1.91
LS1
.070
.095
1.78
2.41
LS2
.035
.048
0.89
1.22
LW1
.135
.145
3.43
3.68
LW2
.047
.057
1.19
1.45
Q1
.030
.070
0.76
1.78
Q2
.020
.035
0.51
0.89
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Terminal 1 is collector.
4. Terminal 2 is base.
5. Terminal 3 is emitter.
6. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 5. Physical dimensions, surface mount (2N5415U4, 2N5416U4) version (U4) (SMD-.22).
U4
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MIL-PRF-19500/485N
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3. REQUIREMENTS
3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before
contract aw ard (see 4.2 and 6.3).
3.3 Abbreviations, symbols, and definitions. A bbr ev ia tio ns, sy mbol s, and defi niti on s used herein shall be as
specified in MIL-PRF-19500 and as follows.
RθJA ........................ Thermal resi stan ce jun cti on to ambi ent.
RθJC ........................ Thermal resi stan ce jun cti on to cas e.
RθJSP ........................Thermal resistance junction to solder pads.
TSP ..........................Temperatur e of solder pad s.
3.4 Interfa ce and phy si cal dim ensi ons . Interface and physical dimensions shall be as specified in
MIL-PRF-19500 and on figures 1, 2, 3, 4, and 5 herein.
3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.
Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).
3.4.2 Construction. These devices shall be constructed in a manner and using materials which enable the devices
to meet the applicable requirements of MIL-PRF-19500 and this document .
3.5 Radiation hardness assurance (RHA). Radiation hardness assurance requirements, PIN designators, and test
levels shall be as defined in MIL-PRF-19500.
3.6 Electr ica l performance char act eris tic s. Unless otherwise specified herein, the electrical performance
characteristics are as specified in 1.3, 1.4, and table I and II.
3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I and II
herein.
3.8 Marking. Marking shall be in accordance with MIL-PRF-19500. The radiation hardened designator M, D, P, L,
R, F, G, or H shall immediately precede (or replace) the device “2N” identifier (depending upon degree of
abbreviation required).
3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
4. VERIFICATION
4.1 Clas sifi cat ion of insp ect io ns. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3).
c. Conformance inspection (see 4.4 and tables I, II, and III).
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MIL-PRF-19500/485N
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4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified
herein.
4.2.1 Group E qua lifi cat ion. Group E inspection shall be performed for qualification or re-qualification only. In
case qualification was awarded to a prior revision of the specification sheet that did not request the performance of
table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on
the first inspection lot of this revision to maintain qualification.
4.2.2 JANHC and JANKC die. Qualification for die shall be in accordance with MIL-PRF-19500.
4.3 Screening (list applicable JAN levels). Screening shall be in accordance with table E-IV of MIL-PRF-19500
and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that
exceed the limits of table I herein shall not be acceptable.
Screen (see table
E-IV of
Measurement
MIL-PRF-19500)
JANS level
JANTX and JANTXV levels
(1) 3c
Thermal impedance met hod 3131 of
MIL-STD-750, see 4.3.2.
Thermal impedance met hod 3131 of
MIL-STD-750, see 4.3.2.
9
ICEX and hFE1
Not applicable.
10
48 hours minimum.
48 hours minimum.
11
ICEX , hFE1
∆ICEX = 100 percent of initial value or
2.5 µA dc, whichever is great er;
∆h
FE1
= ±15 percent of initial value.
ICEX and hFE1
12
See 4.3.1.
See 4.3.1.
13
Subgroups 2 and 3 of table I herein;
∆ICEX = 100 percent of initial value
or 2.5 µA dc, whichever is greater;
∆hFE1 = ±15 percent of initial value.
Subgroup 2 of table I herein;
∆ICEX = 100 percent of initial value
or 2.5 µA dc, whichever is greater;
∆hFE1 = ±20 percent of initial value.
(1) Shall be performed any time after temperature cycling, screen 3a; JANTX and JANTXV levels do not need to
be repeated in screening requirements.
4.3.1 Power burn-in conditions. Power burn-in conditions are as follow s: Method 1039 of MIL-STD-750, test
condition B, VCB = 10 - 30 V dc. Power shall be applied to achieve TJ = +135°C minimum using a minimum PD = 75
percent of PT maximum rated as defined in 1.3. With approval of the qualify ing activ ity and prepar ing act iv ity ,
alternate burn-in criteria (hours, bias conditions, TJ, and mounting conditio ns) may be used for JANTX and JANTXV
quality levels. A justification demonstrating equivalence is required. In addition, the manufacturing site’s burn-in data
and performance history will be essential criteria for burn-in modificatio n approv al.
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MIL-PRF-19500/485N
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4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method
3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW (VC and VH where
appropriate). Measurement delay time (tMD) = 70 µs max. See table II, group E, subgroup 4 and figures 6, 7, and 8
herein.
4.3.3 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with
MIL-PRF-19500, “Discrete Semiconductor Die/Chip Lot Acceptance”. Burn-in duration for the JANKC level follows
JANS requirements; the JANHC follows JANTX requirements.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as
specified herein. If alternat e screen ing is bei ng performed per M IL-PRF-19500, a sample of screen ed dev ice s shal l
be submitted to and pass the requirements of group A1 and A2 inspection only (table VIb, group B, subgroup 1 is not
required to be performed again if group B has already been satisfied in accordance with 4.4.2).
4.4.1 Gro up A inspe ctio n. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I
herein. Electrical measurements (end-points) shall be in accordance with the applicable inspections of table I,
subgroup 2 herein.
4.4.2 Gro up B inspe ctio n. Group B inspection shall be conducted in accordance with the tests and conditions
specified for subgroup testing in table E-VIa (JANS) of MIL-PRF-19500 and 4.4.2.1 herein. Electrical measurements
(end-points) requirements shall be in accordance with table I, subgroup 2 herein. See 4.4.2.2 for JAN, JANTX, and
JANTXV group B testing. Electrical measurements (end-points) for JAN, JANTX, and JANTXV shall be after each
step in 4.4.2.2 and shall be in accordance with table I, subgroup 2 here in.
4.4.2.1 Group B inspection, table E-VIa (JANS) of MIL-PRF-19500.
Subgroup Method Conditions
B4 1037 VCB = 10 V dc; 2,000 cycles. Adjust device current, or power, to achieve a minimum
∆TJ of 100°C.
B5 1027 (NOTE: If a failure occurs, resubmission shall be at the test conditions of the original
sample.) VCB = 10 V dc, PD ≥ 100 percent of maximum rated PT (see 1.3).
Option 1: 96 hours minimum sample size in accordance with table E-VIa of
MIL-PRF-19500, adjust TA or PD to achieve TJ = +275°C minimum.
Option 2: 216 hours minimum, sample size = 45, c = 0; adjust TA or PD to achieve
TJ = +225°C min imum.
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MIL-PRF-19500/485N
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4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the
event of a lot failure, the resubmission requirements of MIL-PRF-19500 shall apply. In addi t ion, all cat astr ophic
failures during CI shall be analyzed to the extent possible to identify root cause and corrective action.
Step Method Conditions
1 1026 Steady-state life: 1,000 hours minimum, VCB = 10 V dc, power shall be applied to
achieve TJ = +150°C minimum using a minimum of PD = 75 percent of maximum rated
PT as defined in 1.3. n = 45 devices, c = 0. The sample size may be increased and
the test time decreased as long as the devices are stressed for a total of 45,000 device
hours minimum, and the actual time of test is at least 340 hours.
2 1048 Blocking life, TA = +150°C, VCB = 80 percent of rated voltage, 48 hours minimum.
n = 45 devices, c = 0.
3 1032 High-temperature life (non-operating), t = 340 hours, TA = +200°C. n = 22, c = 0.
4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following
requirements:
a. For JAN, JANTX, and JANTXV samples shall be selected randomly from a minimum of three wafers (or from
each wafer in the lot) from each wafer lot. For JANS, samples shall be selected from each inspection lot.
See MIL-PRF-19500.
b. Shall be chosen from an inspection lot that has been submitted to and passed t a ble I , subgroup 2,
conformance inspection. When the final lead finish is solder or any plating prone to oxidati on at hig h
temperature, the samples for life test (subgroups B4 and B5 for JANS, and group B for JAN, JANTX, and
JANTXV) may be pulled prior to the application of final lead finish.
4.4.3 Gro up C inspec tion , Group C inspection shall be conducted in accordance with the test and conditions
specified for subgroup testing in table E-VII of M IL-PRF-19500, and in 4.4.3.1 (JANS ) and 4.4.3.2 (JAN, JANTX, and
JANTXV) herein for group C testing. Electrical measurements (end-points) requirements shall be in accordance with
table I, subgroup 2 herein.
4.4.3.1 Group C inspection (JANS), table E-VII of MIL-PRF-19500.
Subgroup Method Condition
C2 2036 Test condition E; (not applicable for UA and U4 devices).
C5 3131 RθJA and RθJC only, as applicable (see 1.3) and in accordan c e w ith thermal imp eda nce
curves.
C6 1026 VCB = 10 - 30 V dc; power shall be applied to achieve TJ = +150°C minimum and a
minimum of PD = 75 percent of maximum rated PT as define d in 1.3. n = 45 devices, c = 0.
The sample size may be incre ased and the test time decr ea sed as long as the devic es are
stressed for a total of 45,000 device hours minimum, and the actual time of test is at least
340 hours.
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MIL-PRF-19500/485N
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4.4.3.2 Group C inspection (JAN, JANTX, and JANTXV), table E-VII of MIL-PRF-19500.
Subgroup Method Condition
C2 2036 Test condition E; not applicable for UA and U4 devices.
C5 3131 RθJA and RθJC only, as applicable (see 1.3 and 4.3.2) and in accordance with thermal
impedance curv es.
C6 Not applicable.
4.4.3.3 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any
inspection lot containing the intended package type and lead finish procured to the same specification which is
submitted to and passes group A tests for conformance inspection. When the final lead finish is solder or any plating
prone to oxidation at high temperature, the samples for C6 life test may be pulled prior to the application of final lead
finish. Testing of a subgroup using a single device type enclosed in the intended package type shall be considered
as complying with the requirements for that subgroup.
4.4.4 Gro up D inspec tion . Conformance inspection for hardness assured JANS and JANKC types shall include
the group D tests specified in table II herein. These tests shall be performed as required in accordance with
MIL-PRF-19500 and method 1019 of MIL-STD-750, for total ionizing dose or method 1017 of MIL-STD-750 for
neutron fluence as applicable (see 6.2 herein), except group D, subgroup 2 may be performed separate from other
subgroups. Alternate package options may also be substituted for the testing provided there is no adverse effect to
the fluence profile.
4.4.5 Gro up E inspe ctio n. Group E inspection shall be conducted in accordance with the conditions specified for
subgroup test ing in table E-IX of MIL-PRF-19500 and as specified in table II herein. Electrical measurements (end-
points) shall be in accord anc e with table I, subgroup 2 herein.
4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pul se mea sure ment s. Conditions for pulse measurement shall be as specified in section 4 of
MIL-STD-750.
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MIL-PRF-19500/485N
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TABLE I. Group A inspection.
Inspection 1/
MIL-STD-750
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 1 2/
Visual and mechanical 3/
examination
2071
Solderability 3/ 4/
Resistanc e to solvents
3/ 4/ 5/
2026
1022
n = 15 leads, c = 0
n = 15 devices, c = 0
Temp cycling 3/ 4/
1051
Test condition C, 25 cycles.
n = 22 devices, c = 0
Hermetic seal 4/
1071
n = 22 devices, c = 0
Fine leak
Gross leak
Electrical measurements 4/
Table I, subgroup 2
Bond strength 3/ 4/
2037
Precondition T A = +250°C at
t = 24 hrs or TA = +300°C at
t = 2 hrs
n = 11 wires, c = 0
Decap internal visual desi gn
verification
2075
n = 4, c = 0.
Subgroup 2
Thermal impedance 6/
3131
See 4.3.2
ZθJX
°C/W
Collector to emitter cutoff current
2N5415, S, UA, U4
3041
Bias condition D
V
CE
= 150 V dc
ICE01
50
µA dc
2N5416, S, UA, U4
VCE = 250 V dc
Collector to emitter cutoff current
2N5415, S, UA, U4
3041
Bias condition D
V
CE
= 200 V dc
ICE02
1
mA dc
2N5416, S, UA, U4
V
CE
= 300 V dc
Collector to emitter cutoff current
2N5415, S, UA, U4
3041
Bias condition A, VBE = 1.5 V dc
V
CE
= 200 V dc
ICEX
50
µA dc
2N5416, S, UA, U4
VCE = 300 V dc
Emitter to base cutoff current
3061
Bias condition D,
V
EB
= 6 V dc
I
EBO
20
µA dc
See footnotes at end of table.
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TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 2 – Continued.
Collector to base cutoff current
2N5415, S, UA, U4
3036
Bias condition D
V
CB
= 175 V dc
ICBO1
50
µA dc
2N5416, S, UA, U4
V
CB
= 280 V dc
Collector to base cutoff current
2N5415, S, UA, U4
3036
Bias condition D
VCB = 200 V dc ICBO2
500
µA dc
2N5416, S, UA, U4
V
CB
= 350 V dc
Forward-current transf er rat i o
3076
V
CE
= 10 V dc, I
C
= 50 mA dc,
pulsed (see 4.5.1)
h
FE1
30
120
Forward-current transf er rat i o
3076
VCE = 10 V dc,
IC = 1 mA dc, pulsed (see 4.5.1)
hFE2
15
Collector to emitter voltage
(saturated)
3071
I
C
= 5 0 m A dc, I
B
= 5 m A dc,
pulsed (see 4.5.1)
V
CE(sat)
2.0
V dc
Base emitter volt age saturati on
3066
Test condition B, V
CE
= 10 V dc,
IC = 50 mA dc, pulsed (see 4.5.1)
VBE
1.5
V dc
Subgroup 3
High temperature operation:
T
A
= +150°C
Collector to base cutoff current
3036
Bias condition D
ICB03
1
mA dc
2N5415, S, UA, U4
V
CB
= 175 V dc
2N5416, S, UA, U4
VCE = 280 V dc
Low temperature operati on:
TA = -65°C
Forward-current transf er rat i o
3076
VCE = 10 V dc, IC = 50 mA dc,
pulsed (see 4.5.1)
hFE3
15
Subgroup 4
Small-signal short- ci rcuit f orward-
current t ra nsf er rati o
3306
VCE = 10 V dc, IC = 10 mA dc,
f = 5 MHz
h
fe
3
15
Small-signal short- ci rcuit f orward-
current t ra nsf er rati o
3206
V
CE
= 10 V dc, I
C
= 5 m A dc,
f < 1 kHz hfe
25
Open circuit output capacitance
3236
V
CB
= 10 V dc, I
E
= 0,
100 kHz < f < 1 MHz
C
obo
15
pF
Input capacitance (output open-
circuited)
3240
VEB = 5 V dc, IC = 0,
100 kHz < f < 1 MHz
C
ibo
75
pF
See footnotes at end of table.
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MIL-PRF-19500/485N
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TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 5
Pulse response
3251
Test condition A
Turn-on time
VCC = 200 V dc, IC = 50 mA dc,
IB1 = 5 mA dc, (see f i gure 9). ton
1
µs
Turn-off time
VCC = 200 V dc, IC = 50 mA dc,
IB1 = IB2 = 5 mA dc,
(see figure 9).
toff
10
µs
Subgroup 6
Not applicable
Subgroup 7
Breakdown voltage, collector to
emitter
3011
IC = 5 0 m A dc, IB = 5 mA dc,
L = 25 mH; f = 30 - 60 Hz,
(see fi gure 10).
V(BR)CEO
2N5415, S, UA, U4
200
V dc
2N5416, S, UA, U4
300
V dc
Safe operati ng area
(continuous dc )
3051
TC = +25°C, 1 cycle, t = 0.4 s, (see
figures 11, 12, and 13). n = 22, c = 0
Test 1 (except UA )
VCE = 10 V dc, IC = 1 A dc .
Test 2 (except UA )
VCE = 100 V dc, IC = 100 m A dc.
Test 3 (except UA )
VCE = 200 V dc.
(2N5415, S, U4 only)
IC = 2 4 m A dc.
Test 4
VCE = 300 V dc.
(2N5416, S, U4 only)
IC = 1 0 m A dc.
Test 1 UA only
VCE = 10 V dc, IC = 0.3 A dc.
Test 2 UA only
VCE = 100 V dc, IC = 30 mA dc.
Test 3 UA only
VCE = 200 V dc.
(2N5415UA only)
IC = 1 2 m A dc.
Test 4
VCE = 300 V dc.
(2N5416UA only)
IC = 5 mA dc.
Electrical measurements
See table I, subgroup 2 herein.
1/ For sampling plan see MIL-PRF-19500.
2/ For resubmission of failed subgroup 1, double the sample size of the failed test or sequence of tests. A failure
in table I, subgroup 1 shall not require retest of the entire subgroup. Only the failed test shall be rerun upon
submission.
3/ Separate samples may be used.
4/ Not required for JANS devices.
5/ Not required for laser marked devices.
6/ This test required for the following end-point measurements only:
Group B, step 1 of 4.4.2.2 herein (JAN, JANTX, and JANTXV).
Group B, subgroups 3, 4, and 5 (JANS).
Group C, subgroup 2 and 6.
Group E, subgroup 1 and 2.
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MIL-PRF-19500/485N
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TABLE II. Group D inspection.
Inspecti on 1/ 2/ 3/
MIL-STD-750
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 1 4/
Neutron irradiation
1017
Neutron exposure Vces = 0 V
Collector to emitter cutoff current
3041
Bias condition D
ICE01
100
µA dc
2N5415, S, UA, U4
VCE = 150 V dc
2N5416, S, UA, U4
VCE = 250 V dc
Collector to emitter cutoff current
3041
Bias condition D
I
CE02
2
mA dc
2N5415, S, UA, U4
V
CE
= 200 V dc
2N5416, S, UA, U4
V
CE
= 300 V dc
Collector to emitter cutoff current
3041
Bias condition D, VBE = 1.5 V dc ICEX
100
µA dc
2N5415, S, UA, U4
V
CE
= 200 V dc
2N5416, S, UA, U4
VCE = 300 V dc
Emitter to base cutoff current
3061
Bias condition D, VEB = 6 V dc
I
EBO
40
µA dc
Collector to base cutoff current
3036
Bias condition D
I
CBO1
100
µA dc
2N5415, S, UA, U4
V
CB
= 175 V dc
2N5416, S, UA, U4
V
CB
= 280 V dc
Collector to base cutoff current
3036
Bias condition D
ICBO2
1
mA dc
2N5415, S, UA, U4
V
CB
= 200 V dc
2N5416, S, UA, U4
V
CB
= 350 V dc
Forward-current transf er rat i o
3076
VCE = 10 V dc, IC = 50 mA dc,
pulsed (see 4.5.1) [hFE1] 5/
[15]
120
Forward-current transf er rat i o
3076
VCE = 10 V dc,
IC = 1 mA dc, pulsed (see 4.5.1) [hFE2 ] 5/
[7.5]
Collector to emitter voltage
(saturated)
3071
I
C
= 5 0 m A dc, I
B
= 5 mA dc, pulsed
(see 4.5.1) VCE(sat)
2.3
V dc
Base emitter volt age saturati on
3066
Test condition B, V
CE
= 10 V dc,
I
C
= 50 mA dc, pulsed (see 4.5.1)
V
BE
1.73
V dc
See footnotes at end of table.
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MIL-PRF-19500/485N
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TABLE II. Group D inspection - Continued
Inspecti on 1/ 2/ 3/
MIL-STD-750
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 2
Total dose irradiation
1019
Gamma exposure
2N5415
Vces = 160V
2N5416
Vces = 240V
Collector to emitter cutoff current
3041
Bias condition D
I
CE01
100
µA dc
2N5415, S, UA, U4
V
CE
= 150 V dc
2N5416, S, UA, U4
VCE = 250 V dc
Collector to emitter cutoff current
3041
Bias condition D
I
CE02
2
mA dc
2N5415, S, UA, U4
V
CE
= 200 V dc
2N5416, S, UA, U4
V
CE
= 300 V dc
Collector to emitter cutoff current
3041
Bias condition D, VBE = 1.5 V dc ICEX
100
µA dc
2N5415, S, UA, U4
V
CE
= 200 V dc
2N5416, S, UA, U4
VCE = 300 V dc
Emitter to base cutoff current
3061
Bias condition D,
VEB = 6 V dc
I
EBO
40
µA dc
Collector to base cutoff current
3036
Bias condition D
I
CBO1
100
µA dc
2N5415, S, UA, U4
V
CB
= 175 V dc
2N5416, S, UA, U4
V
CB
= 280 V dc
Collector to base cutoff current
3036
Bias condition D
I
CBO2
1
mA dc
2N5415, S, UA, U4
V
CB
= 200 V dc
2N5416, S, UA, U4
V
CB
= 350 V dc
Forward-current transf er rat i o
3076
VCE = 10 V dc, IC = 50 mA dc,
pulsed (see 4.5.1) [hFE1] 5/
[15]
120
Forward-current transf er rat i o
3076
VCE = 10 V dc,
IC = 1 mA dc, pulsed (see 4.5.1) [hFE2 ] 5/
[7.5]
Collector to emitter voltage
(saturated)
3071
I
C
= 5 0 m A dc, I
B
= 5 mA dc, pulsed
(see 4.5.1) VCE(sat)
2.3
V dc
Base emitter volt age saturation
3066
Test condition B, V
CE
= 10 V dc,
I
C
= 50 mA dc, pulsed (see 4.5.1) VBE
1.73
V dc
1/ Tests to be performed on all devices receiving radiation exposure.
2/ For sampling plan, see MIL-PRF-19500.
3/ Electrical characteristics apply to all device types unless otherwise noted.
4/ See 6.2.e herein.
5/ See method 1019 of MIL-STD-750 for how to determine [hFE] by first calculating the delta(1/hFE) from the pre and
post radiation hFE. Notice that [hFE] is not the same as hFE and cannot be measured directly. The [hFE] value can
never exceed the pre-radiat ion minimum hFE that it is based upon.
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MIL-PRF-19500/485N
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TABLE III. Group E inspection (all quality levels) - for qualification or requalification only.
Inspection
MIL-STD-750
Qualification
Method
Conditions
Subgroup 1
45 devices
c = 0
Temperature cycli ng
(air to air)
1051
Test condition C, 500 cycles.
Hermetic seal
Fine leak
Gross leak
1071
Electrical
measurements
See table I, subgroup 2 herein.
Subgroup 2
45 devices
c = 0
Intermittent life
1037
VCB = 10 V dc, 6,000 cycles. Adjust device current , or power, to
achieve a minimum ∆TJ of +100°C.
Electrical
measurements
See table I, subgroup 2 herein.
Subgroup 4
15 devices,
c = 0
Thermal resistanc e
3131
RθJSP can be calculated but shall be measured once in the same
package with a similar die size to confirm calculati ons (may apply to
multiple specification sheets).
Thermal impedance
curves
See MIL-PRF-19500, table E-IX, group E, subgroup 4.
Subgroup 5
15 devices
c = 0
Barometric press ure
reduced (altitude
operation).
1001
Normal mounting; press ure = 8 mm Hg for 60 seconds minimum.
Subgroup 6
11 devices
ESD
1020
Subgroup 8
45 devices
c = 0
Reverse stability
1033
Condition A for devices ≥ 400 V dc.
Condition B for devices < 400 V dc.
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MIL-PRF-19500/485N
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FIGURE 6. Thermal impedance graph (RθJC) for 2N54115 and 2N5416 (U4).
Maximum Thermal Impedance
0.1
1
10
100
0.000001 0.00001 0.0001 0.001 0.01 0.1 110
Time (s)
Theta (C/W)
46x46 Chip, SMD.22 (U4) Pkg, Tc=25C
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MIL-PRF-19500/485N
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FIGURE 7. Thermal impedance graph (RθJC) for 2N54115 and 2N5416 (TO-5).
Maximum Thermal Impedance
0.1
1
10
100
0.000001 0.00001 0.0001 0.001 0.01 0.1 110 100
Time (s)
Theta (C/W)
2N5416 in Kovar TO-5/TO-39 with Moly Tab Tc=25C
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MIL-PRF-19500/485N
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FIGURE 8. Thermal impedance graph (RθJA) for 2N54115 and 2N5416 (TO-5).
Maximum Thermal Impedance
0.1
1
10
100
1000
0.000001 0.00001 0.0001 0.001 0.01 0.1 110 100 1000
Time (s)
Theta (C/W)
2N5416 in Kovar TO-5/TO-39 with Moly Tab Ta=25C
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MIL-PRF-19500/485N
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NOTES:
1. The rise time (tr) and fall time (tf) of applied pulse shall be each < 20 ns; duty cycle < 2 percent; generator
source impedance shall be 50 Ω; pulse width = 20 µs.
2. O utput s ampling oscilloscope: Zin > 100 kΩ; Cin < 50 pF; rise time < 2 ns.
FIGURE 9. Pulse r esponse test circuit.
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MIL-PRF-19500/485N
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NOTES:
1. L = 25 mH, Q = 76, R = 83.4 Ω, I = 75 mA (J.W. Miller number 6308 or equival ent) .
2. BVCEO is acceptable when the trace falls to the right and above point “A” for type 2N5415. The trace shall fall
to the right and above point “B” for type 2N5416.
FIGURE 10. BVCEO me asur e ment tes t circu it .
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MIL-PRF-19500/485N
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FIGURE 11. Maximum safe operating graph (continuous dc).
SOA Power Curve - Safe Operating Area Tj=200C
0.001
0.01
0.1
1
10
110 100 1000
Voltage (V)
Current ( A )
1us
10us
100us
1ms
10ms
100ms
400ms
DC
2N5416, 2N5415 ss485 TO-5KM at T a=25C
Top = 25C
Tjmax = 200C
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MIL-PRF-19500/485N
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FIGURE 12. Maximum safe operating graph (continuous dc).
SOA Power - Safe Operating Area Tj=200C
0.001
0.01
0.1
1
10
110 100 1000
Voltage (V)
Current ( A )
1us
10us
100us
1ms
10ms
100ms
400ms
DC
2N5416U4, 2N5415U4 ss485 on Copper Sink Tc=25C
Top = 25C
Tjmax = 200C
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MIL-PRF-19500/485N
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FIGURE 13. Maximum safe operating graph (continuous dc).
SOA Power - Safe Operating Area Tj=200C
0.001
0.01
0.1
1
10
110 100 1000
Voltage (V)
Current ( A )
1us
10us
100us
1ms
10ms
100ms
400ms
DC
2N5416UA, U4, 2N5415UA, U4 ss485 on PCB Ta=25C
Top = 25C
Tjmax = 200C
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MIL-PRF-19500/485N
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5. PACKAGING
5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or
order (see 6.2). When packaging of materiel is to be performed by DoD or in-house contractor personnel, these
personnel need to contact the responsible packaging activity to ascertain packaging requirements. Packaging
requirements are maintained by the Inventory Control Point's packaging activities within the Military Service or
Defense Agency, or within the Military Service’s system commands. Packaging data retrieval is available from the
managing Military Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting
the responsible packaging activity.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.
The notes specified in MIL-PRF-19500 are applicable to this specification.)
6.1 Inten ded use. Semiconductors conforming to this specification are intended for original equipment design
applications and logistic support of existing equipment.
6.2 Acqui sit ion requ irements. Acquisition documents should specify the following:
a. Title, number, and date of this specification.
b. Packaging requirements (see 5.1).
c. Lead finish (see 3.4.1).
d. Product assurance level and type designator.
e. For acquisition of RHA designated devices, table II, subgroup 1 testing of group D is optional. If subgroup 1
testing is desired, it shou ld be spe cifi ed in the contr act.
6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are,
at the time of award of contract, qualified for inclusion in Qualified Manufacturers List (QML 19500) whether or not
such products have actually been so listed by that date. The attention of the contractors is called to these
requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal
Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the
products covered by this specification. Information pertaining to qualification of products may be obtained from DLA
Land and Maritime, ATTN: /VQE, P.O. Box 3990, Columbus, OH 43218-3990 or e-mail vqe.chief@dla.mil . An
online listing of products qualified to this specification may be found in the Qualified Products Database (QPD) at
https://assist.dla.mil.
6.4 Suppliers of JANHC and JANKC die. The qualified JANHC and JANKC suppliers with the applicable letter
version (example, JANHCA2N5415) will be identified on the QPL.
JANC ordering infor mation
Manufacturers
CAGE
PIN
34156
43611
2N5415
JANHCD2N5415
JANKCD2N5415
JANHCB2N5415
JANKCB2N5415
2N5416
JANHCD2N5416
JANKCD2N5416
JANHCB2N5416
JANKCB2N5416
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MIL-PRF-19500/485N
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6.5 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where
changes from the previous issue were made. This was done as a convenience only and the Government assumes
no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the
requirements of this document based on the entire content irrespective of the marginal notations and relationship to
the last previous issue.
Custodians: Preparing activity:
Army - CR DLA - CC
Navy - EC
Air Force - 85 (Project 5961-2013-020)
DLA - CC
Review activities:
Army - AR, MI
Air Force - 19, 99
NOTE: The activities listed above were interested in this document as of the date of this document. Since
organizations and responsibilities can change, you should verify the currency of the information above using the
ASSIST Online database at https://assist.dla.mil.
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