EL5196CS-T7 - Intersil Corporation

Note: All information contained in this data sheet has been carefully checked and is believed to be accurate as of the date of publication; however, this data sheet cannot be a “controlled document”. Current revisions, if any, to these

specifications are maintained at the factory and are availabl e upon your re quest. We re commend checking the revision level before finalization of your design documentation.

EL5196C

General Description

The EL51 96C is a fi x ed gai n amplif ier wi th a ba nd width o f 40 0M Hz,

making the se amplifiers ideal for today’s hi gh spee d video an d moni-

tor applications. The EL5196C features internal gain setting resistors

and can be configured in a gain of +1, -1 or +2. The same bandwidth is

seen in both gain-of -1 and gain-of-2 applications.

For applications where board space is critical, the EL5196C is offered

in the S OT23 -5 pac kage, as wel l as an 8-pi n SO. Th e EL 5196 C op er-

ates over the indust ri al temperature ran ge of -40°C to +85°C.

Pin Configurations

EL5196CW

SOT23-5

OUT

VS-

IN+

VS+

IN-

EL5196CS

SO-8

IN-

IN+

NC*

VS+

OUT

VS- NC

* This pin must be left disconnected

Features

•Gain selectable (+1, -1, +2)

•400MHz -3dB BW (AV = 1, 2)

•9mA supply current

•Singl e an d du a l sup p l y op er a tion,

from 5V t o 10V

•Available in SOT2 3-5 package

•Triple (EL5396C) av a ila ble

•200MHz, 3mA product avai lable

(EL5197C, EL5397C)

Applications

•Video Amplifiers

•Cable Drivers

•RGB Amplifiers

•Test Equipment

•Instrumentation

•Current to Voltage Converters

Ordering Information

Part No Package Tape &

Reel Outline #

EL5196CW-T7 SOT23-5 7”MDP0038

EL5196CW-T13 SOT23-5 13”MDP0038

EL5196CS 8-Pin SO - MDP0027

EL5196CS-T 7 8-Pin SO 7”MDP0027

EL5196CS-T 13 8-Pin SO 13”MDP0027

EL5196C

Single 400MHz Fixed Gain Amplifier

April 9, 2001

EL5196C

Single 400MHz Fixed Gain Amplifier

EL5196C

Absolute Maximum Ratings (TA = 25°C)

Values beyond absolute maximum ratings can cause the device to be pre-

maturely damaged. Absolute maximum ratings are stress ratings only and

functional device operation is not implied.

Supply Voltage between VS+ and VS-11V

Maximum Continuous Output Current 50mA

Operating Junction Temperature 125°C

Power Dissipation See Curves

Pin Voltages VS- - 0.5V to VS+ +0.5V

Storage Temperature -65°C to +150°C

Operating Temperature -40°C to +85°C

Lead Temperature 260°C

Important Note:

All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are at the

specified temperature and are pulsed tests, therefore: TJ = TC = TA.

Electrical Characteristics

VS+ = +5V, VS- = -5V, RL = 150Ω, TA = 25°C unless otherwise specified.

Parameter Description Conditions Min Typ Max Unit

AC Performance

BW -3dB Bandwidth AV = +1 400 MHz

AV = -1 400 MHz

AV = +2 400 MHz

BW1 0.1dB Bandwidth 35 MHz

SR Slew Rate VO = - 2 .5 V to +2 .5V, AV = +2 2500 2900 V/µs

ts 0.1% Settling Time VOUT = - 2 .5 V t o +2 .5 V, AV = -1 9 ns

enInput Voltage Noise 3.8 nV/√Hz

in- IN- input current noise 25 pA/√Hz

in+ IN+ input current noise 55 pA/√Hz

dG Differential Gain Error [1] AV = +2 0.035 %

dP Differential Phase Error [1] AV = +2 0.04 °

DC Performance

VOS Offset Voltage -15 1 15 mV

TCVOS Input Offset Voltage Temperature Coefficient Measured from TMIN to TMAX 5µV/°C

AEGain Error VO = -3V to +3 V -2 1.3 2 %

RF, RGInternal RF and RG320 400 480 Ω

Input Characteristics

CMIR Common Mode Input Range ±3V ±3.3V V

+IIN + Input Current -120 40 120 µA

-IIN - Input Current -40 4 40 µA

RIN Input Resistance at IN+27kΩ

CIN Input Capacitance 0.5 pF

Output Characteristics

VOOutput Voltage Swing RL = 150Ω to GND ±3.4V ±3.7V V

RL = 1KΩ to GND ±3.8V ±4.0V V

IOUT Output Current RL = 10Ω to GND 95 120 mA

Supply

IsON Supply Current No Load, VIN = 0V 8 9 10.5 mA

PSRR Power Supply Rejection Ratio DC, VS = ±4.75V to ±5.25V 55 75 dB

-IPSR - Input Current Power Supply Rejection DC, VS = ±4.75V to ±5.25V -2 2 µA/V

1. Standard NTSC test, AC signal amplitude = 286mVP-P, f = 3.58MHz

EL5196C

Single 400MH z Fix ed Gain Amplif ier

EL5196C

Typical Performance Curves

Fre quen cy Re sponse (Gain)

SOT23 Package

1M 10M 100M 1G

-2

-6

-10

-14

Frequency (Hz)

Normalized Magnitude (dB)

AV=-1

AV=1

RL=150Ω

Frequency Response (Phase)

SOT23 Package

1M 10M 100M 1G

-90

-180

-270

-360

Frequency (Hz )

Phase (°)

RL=150Ω

All Gains

AV=2

Frequency Response for Various CL

1M 10M 100M 1G

Frequency (Hz)

Normalized Magnitude (dB)

8pF added

4pF added

0pF added

AV=2

RL=150Ω

Group Delay vs Frequency, All Gains

1M 10M 100M 1G

-3.5

-3

-2.5

-1.5

-0.5

Frequency (Hz )

Dela y (ns)

RL=150Ω

All Gains

Frequency Response for Various Common-mode

Input Voltages

1M 10M 100M 1G

Frequency (Hz)

Normalized Magnitude (d B)

VCM=3V

VCM=0V

VCM=-3V

AV=2

RL=150Ω

-2

-1

-2

-6

-2

-6

-10

-14

Transimpedance (ROL) vs Frequency

1k Frequency (Hz )

10k 100k 1M 10M 100M 1G

10M

100

10k

100k

1M Phase

Gain

Magnitud e (

Ω

)

-90

-180

-270

-360

Phase (°)

EL5196C

Single 400MHz Fixed Gain Amplifier

EL5196C

Typical Performance Curves

PSRR and CMRR vs Frequency

PSRR/CMRR (d B)

Frequency (Hz)

PSRR+

PSRR-

CMRR

-80

-60

-40

-20

10k 100k 1M 10M 1G100M

-3dB Bandwidth vs Supply Voltage

567 10

450

400

350

300

Total Supply Volt age (V )

-3dB Bandwidth (MHz)

AV=2

AV=-1AV=1

RL=150Ω

Peaking vs Supply Voltage

Total Supply Voltage (V)

Peaking (dB )

AV=2 AV=-1

AV=1

RL=150Ω

567 1089

Voltage and Current Noise vs Frequency

100 Frequency ()

1000 10k 100k 10M1M

in+

in-

Voltage N o ise (nV/

√

Hz)

, Curren t Noise (pA/

√

Hz)

1000

100

-3dB Bandwidth vs Temperature

-40 10 60 160

600

500

300

100

Ambient Temperature (°C)

-3dB Bandwi dth (MHz)

RL=150Ω

Peaking vs Temperature

0.6

0.5

0.4

0.2

Ambien t Temper ature (°C)

Peaking (dB)

RL=150Ω

110

400

200

-40 10 60 160110

0.3

0.1

EL5196C

Single 400MH z Fix ed Gain Amplif ier

EL5196C

Typical Performance Curves

Closed Loop Output Impedance vs Frequency

Frequency (Hz)

Output Impedance (

Ω

)

100

0.001

0.1

0.01

Supply Current (mA)

-2

0Supply Voltage (V)

Supply Current vs Supply Voltage

12210864

100 10k 100M 1G1M

10 Frequency (MHz) 100 200

Input Powe r I ntercept (dBm)

-15

-10

-5

AV=+2

RL=150Ω

Two-tone 3rd Order

Input Referred Intermodulation Intercept (IIP3)

2nd and 3rd Harmonic Distortion vs Frequency

1Frequency (MHz)

10 100

Harmonic Distortion (dBc)

-10

-90

-70

-30

-50

-80

-40

-60

AV=+2

VOUT=2VP-P

RL=100Ω

2nd Order

Distortion

3rd Order

Distortion

-20

200

AV=+2

RL=100Ω

0.03

0.02

0.01

-0.01

-0.02

-0.03

-0.04

-0.05-1 -0.5 0 0.5 1

dG (%) or dP (°)

AV=2

RF=RG=250Ω

RL=150Ω

0.03

0.02

0.01

-0.01

-0.02

-0.03

-0.04

dG (%) or dP (°)

-1 -0.5 0 0.5 1

AV=1

RF=375Ω

RL=500ΩdP

Differential Gain/Phase vs DC Input

Voltage at 3.58MHz

DC Input Volt age

Differential Gain/Phase vs DC Input

Voltage at 3.58MHz

DC Input Volt age

EL5196C

Single 400MHz Fixed Gain Amplifier

EL5196C

Typical Performance Curves

1Frequency (MHz)

10 100

Output Voltage Sw ing (VPP)

Output Voltage Swing vs Frequency

THD<0.1%

RL=150Ω

RL=500Ω

AV=2

Output Voltage Swing vs Frequency

THD<1%

1Frequency (MHz)

10 100 200

Output Voltage Sw ing (VPP)

AV=2

RL=500Ω

RL=150Ω

Small Signal Step Response

Settling Time vs Settling Accuracy

Settling Time (ns)

0.01 0.1 1

Settling Accuracy (%)

AV=2

RL=150Ω

VSTEP=5VP-P output

200mV/div

10ns/div

VS=±5V

RL=150Ω

AV=2

Large Signal Step Response

1V/div

10ns/div

VS=±5V

RL=150Ω

AV=2

Transimpedance (RoI) vs Temperature

375

350

325

300

275

250

225

200-40 10 60 110 160

Die Temperature (°C)

RoI (k

Ω

)

EL5196C

Single 400MH z Fix ed Gain Amplif ier

EL5196C

Typical Performance Curves

Fre quen cy Re sponse (Gain)

SOIC8 Package

1M 10M 100M

Frequency (Hz)

Normalized Magnitude (dB)

AV=1

RL=150Ω

Frequency Response (Phase)

SOIC8 Package

1M 10M 100M 1G

Frequency (Hz )

Phase (°)

AV=2, -1

RL=150Ω

-2

-6

-10

-14

-90

-180

-270

-360

ICMR and IPSR vs Temperature

2.5

1.5

0.5

-0.5

-1-40 10 60 110 160

Die Temperature (°C)

ICMR/IPSR (µA/V)

ICMR-

IPSR

ICMR+

PSRR and CMRR vs Temperature

10-40 10 60 110 160

Die T emp erat u re (°C)

PSRR/CMRR (dB)

PSRR

CMRR

Offset Voltage vs Temperature

-1-40 10 60 110 160

Die T emp erat u re (°C)

VOS (mV)

Input Current vs Temperature

140

120

100

-20-40 10 60 110 160

Temperature (°C)

Input Current (µA)

IB-

IB+

EL5196C

Single 400MHz Fixed Gain Amplifier

EL5196C

Typical Performance Curves

Positive Input Resistance vs Temperature

0-40 10 60 110 160

Temperature (°C)

RIN (k

Ω

)

Supply Current vs Temperature

8-40 10 60 110 160

Temperature (°C)

Supply Current (mA)

Positive Out pu t S wing vs Temperature for V ar iou s

Loads

4.2

4.1

3.9

3.8

3.7

3.6

3.5-40 10 60 110 160

Temperature (°C)

VOUT (V)

150Ω

1kΩ

Negative Output Swing vs Temperature for Various

Loads

-3.5

-3.6

-3.7

-3.9

-4

-4.1

-4.2-40 10 60 110 160

Temperature (°C)

VOUT (V)

-3.8

150Ω

1kΩ

Output Current vs Temperature

140

135

130

125

120

115-40 10 60 110 160

Die Temperature (°C)

IOUT (mA)

Source

Sink

Slew Rate vs Temperature

5000

4000

3000-40 10 60 110 160

Die Temperature (°C)

Slew Rate (V/µS)

4500

3500

AV=2

RF=RG=250Ω

RL=150Ω

EL5196C

Single 400MH z Fix ed Gain Amplif ier

EL5196C

Typical Performance Curves

Maximum Power Dissipation vs Ambient

Temperature

1.4

1.2

0.6

0.4

0.2

0-50 0 50 100

Ambien t Temper ature (°C)

Power Dissipation (W)

0.8

SOT-23

SOIC-8

TJMAX=150°C

EL5196C

Single 400MHz Fixed Gain Amplifier

EL5196C

Applications Information

Product Description

The EL5196C is a current-feedback operational ampli-

fier that offers a wide -3dB bandwidth of 600MHz and a

low supply current of 6mA per amplifier. The EL5196C

works with supply voltages ranging from a single 5V to

10V and they are al so cap able of swin ging to with in 1V

of either supply on the output. Because of their current-

feedb ack topo lo gy , th e EL 519 6C does no t hav e the no r -

mal gain-bandwidth pr oduct associated with voltage-

feedback operational amp lifiers. Instead, its -3dB band-

width to re main relativel y constant as closed-lo op gain is

increased. This combination of high bandwidth and low

power, together with aggressive pricing make the

EL5196C the ideal choice for many low- power/high-

bandwidth applications such as portable, handheld, or

battery-powered equipment.

For varyin g bandwidth needs, consider t he EL5191C

with 1GHz on a 9mA supply current or the EL5193C

with 300MHz on a 4mA supply current. Versions

include single, dual, and triple amp packages with

SOT23-5, 16-pin QSOP and 8-pin or 16-pin SOIC

outlines.

Power Supply Bypass ing and Printe d Circuit

Board Layout

As wit h a ny hi g h fre que ncy d evi ce , go od pri n te d c irc uit

board layout is necessary for optimum performance.

Low impedance ground plane construction is essential.

Surface mount components are recommended, but if

leaded components are used, lead lengths should be as

short as possible. The power supply pins must be well

bypassed to reduce t he risk of osci lla tion. Th e combi na-

tion of a 4.7µ F tantalum capacitor in parallel with a

0.01µF capacitor has been shown to work well when

placed at each supply pin.

For good AC performan ce, parasiti c capacitan ce should

be kept to a minimum, especially at the inverting input.

(See the Capacitance at the Inverting Input section) Even

when ground plane construction is used, it should be

removed from the area near the inverting input to mini-

mize any stray capacitance at that node. Carbon or

Metal-Film resistors are acceptable with the Metal-Film

resistors giving slightly less peaking and bandwidth

because of additional series inductance. Use of sockets,

particularly for the SO package, should be avoided if

possible. Sockets add parasitic ind uctance and capaci-

tance which will result in additional peaking and

overshoot.

Capacitance at the Inverting Input

Any manufacturer’s high-speed voltage- or current-

feedbac k amplifier can b e affected by stra y capacitan ce

at the inverting input. For inverting gains, this parasitic

capacita nce has little effect becau se the invertin g input is

a virtual gr o und, but for non -i nve rtin g gain s, this ca pac-

itance (in conjunction with the feedback and gain

resistors) creates a pole in the feedback path of the

amplifier. This pole, if low enough in frequency, has the

same dest abilizing effect as a ze ro in the forward op en-

loop respon se. The use of large-value feedback and gain

resistors exacerbates the problem by further lowering

the pole frequency (increasing the possibility of

oscillation.)

The EL5196C has been optimized with a 375Ω feedback

resistor. With the high bandwidth of these amplifiers,

these resistor values might cause stability problems

when combined with parasitic capacitance, thus ground

plane is n ot recomm ende d aroun d the inv erting in put pi n

of the amplifier.

Feedback Resistor Values

The EL519 6C ha s bee n des igne d and spec ifi ed at a gain

of +2 with RF approximately 375Ω. This value of feed-

back resistor gives 300MHz of -3dB bandwidth at AV=2

with 2dB of peaking. With AV=-2, an RF of 375Ω gives

275MHz of band width with 1dB of peaki ng. Since the

EL5196C is a current-feedb ack ampli fier, it i s also pos-

sible to change the value of RF to get more bandwidth.

As seen in the curve of Frequency Response for Various

RF and RG, band width an d peaking can be easily mod i-

fied by varying t he value of the feedback resistor.

Because the EL5196C i s a current-feedback amplifier,

its gain-bandwidth product is not a constant for different

closed-loop gains. This feature actually allows the

EL5196C to maintain about t he same -3dB bandwidth.

As gain is increased, bandwidth decreases slightl y while

EL5196C

Single 400MH z Fix ed Gain Amplif ier

EL5196C

stability increases. Since the loop stability is improving

with higher closed-loop gains, it becomes possible to

reduce the value of RF below the specified 375Ω and

still retain stability, resulting in only a slight loss of

bandwidth with increased closed-loop gain.

Supply Voltage Range and Single-Supply

Operation

The EL5196C has been designed to operate with supply

voltages having a span of greater than 5V and less than

10V. In practical terms, this means that the EL5196C

will operate on dual supplies ranging from ±2.5V to

±5V. With single-supply, the EL5196C will operate

from 5V to 10V.

As supply voltages continue to decrease, it becomes nec-

essary to provide input and output voltage ranges that

can get as close as possible to the supply voltages. The

EL5196C has an inpu t ran ge which e xtends to with in 2V

of either supply. So, for example, on ±5V supplies, the

EL5196C ha s an inpu t r an ge which span s ±3V. The out-

put range of the EL5196C is also quite large, extending

to within 1V of the supply rail. On a ±5V supply, the

output is therefore capable of swinging from -4V to

+4V. Si ngle-supply ou tp ut ra nge is larg e r bec au s e o f the

increased negative swing due to the external pull-down

resistor to gro u n d.

Video Performan ce

For good video performance, an amplifier is required to

maintain the same output impedance and the same fre-

quency response as DC levels are changed at t he output.

This is especially dif ficult when driving a standard video

load of 150Ω, because of the change i n output current

with DC level. Previously, good differential gain could

only be achieved by running high idle currents through

the output transistors (to reduce variations in output

impedance.) These currents were typically comparable

to the entire 6mA supply current of each EL5196C

amplifier. Special circuitry has been incorporated in the

EL5196C to reduce the variation of output impedance

with current output. This results in dG and dP specifica-

tions of 0.015% and 0.04°, while driving 150Ω at a gain

of 2.

Video performance has also been measured with a 500Ω

load at a gain of +1. Under these conditions, the

EL5196C has dG and dP specifications of 0.03% and

0.05°, respect ive ly .

Output Drive Capab ilit y

In spite of its low 6mA of supply current, the EL5196C

is capable of providing a minimum of ±120mA of output

current. With a minimum of ±120mA of output drive,

the EL5196C is capable of driving 50Ω loads to both

rails, making it an excellent choice for driving isolation

transformers in telecommunications applications.

Driving Cables and Ca pacitive Loads

When used as a cable driver, double termination is

always recomme nded for reflection-free performance .

For those app licat ions , th e back-te rm inatio n series re sis-

tor will decou pl e the EL51 96 C from the c able and a llo w

extensive capacitive drive. However, other applications

may have h igh c apa ci tive l oa ds witho ut a b ack -ter mina-

tion resistor. In these applications , a small series resistor

(usually between 5Ω and 50Ω) can b e placed in series

with the output to eliminate most peaking. The gain

resistor (RG) ca n th e n be ch os e n to m a ke u p f o r a n y ga in

loss which may be created by this addi tional resistor at

the output. In many cases it is also possible to simply

increase the va lue of th e feedback resistor (RF) to reduce

the peaking.

Current Limiting

The EL5196C has no internal current-limiting circuitry.

If the outpu t is shorted , it is possible to ex ceed the Abso -

lute Maximum Rating for output current or power

dissipation , p oten tially resultin g in the destructio n o f th e

device.

Power Di ssipatio n

With the hi gh outp ut drive cap ab ili ty of th e EL5 19 6C, it

is possible to exceed the 150°C Absolute Maximum

junction temp erature und er certain very hi gh l oad cur-

rent conditions. Generally speaking when RL falls below

about 25Ω, it is important to calculate the maximum

junction temperature (TJMAX) for the application to

determine i f power supply voltages, load conditions, or

package type need t o be modifi ed for the E L5196C to

EL5196C

Single 400MHz Fixed Gain Amplifier

EL5196C

remain in the safe operating area. These parameters are

calculat ed as follows:

where:

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PDMAX for each amplifier can be calculated as follows:

where:

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TJMAX TMAX θJA nPD

MAX

××()+=

PDMAX 2(VSISMAX)VS

(VOUTMAX)VOUTMAX

----------------------------

×–+××=

EL5196C

Single 400MHz Fixed Gain Amplifier

EL5196C

General Disclaimer

Specifications contained in this data sheet are i n effect as of the publ ication date shown. Elantec, Inc. reserves t he right to make changes in the cir-

cuitry or specifica tions cont ained he rein a t any time without notice . Ela ntec, Inc . assume s no responsibili ty f or the use of any circui ts described

herein and makes no representations that they are free from patent infringement.

WARNING - Life Support Policy

Elantec, Inc. products are not authorized for and should not be used

within Life Support Systems without the specific written consent of

Elantec, Inc. Life Suppo rt systems are equipme nt intended to sup -

port or sustain life and whose failure to perform when properly used

in accordance with instructions provided can be reasonably

expected to result in significant per sonal i njury or death. Us ers con-

templatin g applicatio n of Elantec, Inc. P roducts in Li fe Support

Systems are requested to contact Elantec, Inc. factory headquarters

to establish suitable terms & conditions for these applications. Elan-

tec, Inc.’s warranty is limited to replacement of defective

component s and does not cov er injury to persons or prop erty or

other consequential damages.

April 9, 2001

Printed in U.S.A.

Elantec Semiconductor, Inc.

675 Tr ade Zone Blvd.

Milpitas, CA 95035

Telephone: (408) 945-1323

(888) ELANTEC

Fax: ( 408) 945-9305

European Office: +44-1 18-977- 6020

Japan Technica l C e nter: + 81-45-682-5820