Document Number: 93184 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 19-May-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
Fast Recovery Diodes (T-Modules), 40 A/70 A/85 A
T40HFL, T70HFL, T85HFL Series
Vishay Semiconductors
FEATURES
• Fast recovery time characteristics
• Electrically isolated base plate
• 3500 VRMS isolating voltage
• Standard JEDEC package
• Simplified mechanical designs, rapid assembly
• Large creepage distances
• UL E78996 approved
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION
The series of T-modules uses fast recovery power diodes in
a single diode configuration. The semiconductors are
electrically isolated from the metal base, allowing common
heatsink and compact assemblies to be built.
These single diode modules can be used in conjunction with
the thyristor modules as a freewheel diode. Application
includes self-commutated inverters, DC choppers, motor
control, inductive heating and electronic welders. These
modules are intended for those applications where very fast
recovery characteristics are required and for general power
switching applications.
PRODUCT SUMMARY
IF(AV) 40 A/70 A/85 A
Type Modules - Diode, Fast
D-55
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS T40HFL T70HFL T85HFL UNITS
IF(AV) 40 70 85 A
IF(RMS) 63 110 133 A
IFSM
50 Hz 475 830 1300
A
60 Hz 500 870 1370
I2t
50 Hz 1130 3460 8550
A2s
60 Hz 1030 3160 7810
VRRM Range 100 to 1000 V
trr Range 200 to 1000 ns
TJRange - 40 to 125 °C
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T40HFL, T70HFL, T85HFL Series
Vishay Semiconductors Fast Recovery Diodes
(T-Modules), 40 A/70 A/85 A
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER VOLTAGE
CODE
trr
CODE
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
IRRM MAXIMUM
AT TJ = 25 °C
μA
T40HFL..
T70HFL..
T85HFL..
10 S02, S05, S10 100 150
100
20 S02, S05, S10 200 300
40 S02, S05, S10 400 500
60 S02, S05, S10 600 700
80 S05, S10 800 900
100 S05, S10 1000 1100
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS T40HFL T70HFL T85HFL UNITS
Maximum average
forward current
at case temperature
IF(AV) 180° conduction, half sine wave
40 70 85 A
70 °C
Maximum RMS
forward current IF(RMS) 63 110 133 A
Maximum peak, one-cycle
forward, non-repetitive
surge current
IFSM
t = 10 ms No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
475 830 1300
A
t = 8.3 ms 500 870 1370
t = 10 ms 100 % VRRM
reapplied
400 700 1100
t = 8.3 ms 420 730 1150
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
1130 3460 8550
A2s
t = 8.3 ms 1030 3160 7810
t = 10 ms 100 % VRRM
reapplied
800 2450 6050
t = 8.3 ms 730 2230 5520
Maximum I2√t for fusing I2√t t = 0.1 ms to 10 ms, no voltage reapplied 11 300 34 600 85 500 A2√s
Low level value of
threshold voltage VF(TO)1 TJ = 25 °C, (16.7 % x π x IF(AV) < I < π x IF(AV)) 0.82 0.87 0.84
V
High level value of
threshold voltage VF(TO)2 TJ = 25 °C, (I > π x IF(AV)) 0.84 0.90 0.86
Low level value of forward
slope resistance rf1 T
J = 25 °C, (16.7 % x π x IF(AV) < I < π x IF(AV)) 7.0 2.77 2.15
mΩ
High level value of forward
slope resistance rf2 T
J = 25 °C, (I > π x IF(AV)) 6.8 2.67 2.07
Maximum forward
voltage drop VFM
IFM = π x IF(AV), TJ = 25 °C, tp = 400 μs square wave
Average power = VF(TO) x IF(AV) + rf x (IF(RMS))21.60 1.73 1.55 V
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T40HFL, T70HFL, T85HFL Series
Fast Recovery Diodes
(T-Modules), 40 A/70 A/85 A Vishay Semiconductors
Note
(1) Tested on LEM 300 A diodemeter tester
Note
(1) A mounting compound is recommended and the torque should be rechecked after a period of about 3 hours to allow for the spread of
the compound
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
REVERSE RECOVERY CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS (1) T40HFL T70HFL T85HFL
UNITS
S02 S05 S10 S02 S05 S10 S02 S05 S10
Maximum reverse
recovery time trr
TJ = 25 °C, -dIF/dt = 100 A/μs
IF = 1 A to VR = 30 V 70 110 270 70 110 270 80 120 290
ns
TJ = 25 °C, -dIF/dt = 25 A/μs
IFM = π x rated IF(AV), VR = - 30 V 200 500 1000 200 500 1000 200 500 1000
Maximum reverse
recovery charge Qrr
TJ = 25 °C, -dIF/dt = 100 A/μs
IF = 1 A to VR = 30 V 0.25 0.4 1.35 0.25 0.4 1.35 0.3 0.6 1.6
μC
TJ = 25 °C, -dIF/dt = 25 A/μs
IFM = π x rated IF(AV), VR = - 30 V 0.55 2.0 8.0 0.6 2.1 8.5 0.8 3.5 1.5
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS T40HFL T70HFL T85HFL UNITS
Maximum peak reverse leakage current IRRM TJ = 125 °C 20 mA
RMS isolation voltage VISOL
50 Hz, circuit to base, all terminals
shorted, TJ = 25 °C, t = 1 s 3500 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS T40HFL T70HFL T85HFL UNITS
Junction operating temperature range TJ- 40 to 125 °C
Storage temperature range TStg - 40 to 150
Maximum internal thermal resistance,
junction to case per module RthJC DC operation 0.85 0.53 0.46
K/W
Thermal resistance,
case to heatsink per module RthCS
Mounting surface, flat, smooth
and greased 0.2
Mounting torque ± 10 %
base to heatsink M3.5 mounting screws (1)
Non-lubricated threads 1.3 ± 10 %
Nm
busbar to terminal M5 screws terminals
Non-lubricated threads 3 ± 10 %
Approximate weight See dimensions -
link at the end of datasheet
54 g
19 oz.
Case style D-55 (T-module)
ΔR CONDUCTION
DEVICES SINUSOIDAL CONDUCTION AT TJ MAXIMUM RECTANGULAR CONDUCTION AT TJ MAXIMUM UNITS
180° 120° 90° 60° 30° 180° 120° 90° 60° 30°
T40HFL 0.06 0.08 0.10 0.14 0.24 0.05 0.08 0.10 0.15 0.24
K/WT70HFL 0.05 0.06 0.08 0.11 0.19 0.04 0.06 0.08 0.12 0.19
T85HFL 0.04 0.05 0.06 0.09 0.15 0.03 0.05 0.07 0.09 0.015
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T40HFL, T70HFL, T85HFL Series
Vishay Semiconductors Fast Recovery Diodes
(T-Modules), 40 A/70 A/85 A
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 5 - Current Ratings Characteristics
Fig. 6 - Current Ratings Characteristics
50
60
70
80
90
100
110
120
130
0 1020304050
30° 60° 90° 120°
180°
Maximum Allowable Case Temperature (°C)
Conduction Angle
Average Forward Current (A)
T4 0 HFL. . Se r i e s
R (DC) = 0.85 K/ W
thJC
50
60
70
80
90
100
110
120
130
0 10203040506070
DC
30°
60°
90°
120°
180°
Maximum Allowable Case Temperature (°C)
Conduc tion Period
Average Forward Current (A)
T4 0 HFL. . Se r i e s
R (DC) = 0.85 K/ W
thJC
50
60
70
80
90
100
110
120
130
0 1020304050607080
30° 60° 90°
120°
180°
Maximum Allowable Case Temperature (°C)
Conduction Angle
Average Forward Current (A)
T7 0 HFL. . Se r i e s
R ( DC ) = 0 . 5 3 K/ W
thJC
50
60
70
80
90
100
110
120
130
0 20406080100120
DC
30°
60°
90°
120°
180°
Maximum Allowable Case Temperature (°C)
Conduction Period
Average Forward Current (A)
T7 0 H FL. . Se r i e s
R (DC) = 0.53 K/ W
thJC
50
60
70
80
90
100
110
120
130
0 102030405060708090
30° 60°
90°
120°
180°
Maximum Allowable Case Temperature (°C)
Conduction Angle
Average Forwa rd Current (A)
T8 5 H FL. . Se r i e s
R (DC) = 0.46 K/ W
thJC
50
60
70
80
90
100
110
120
130
020406080100120140
DC
30° 60°
90°
120°
180°
Maximum Allowable Case Temperature (°C)
Conduction Period
Average Forward Current (A)
T8 5 H FL. . Se r i e s
R ( DC ) = 0 . 46 K/ W
thJC
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T40HFL, T70HFL, T85HFL Series
Fast Recovery Diodes
(T-Modules), 40 A/70 A/85 A Vishay Semiconductors
Fig. 7 - Forward Power Loss Characteristics
Fig. 8 - Forward Power Loss Characteristics
Fig. 9 - Forward Power Loss Characteristics
Fig. 10 - Forward Power Loss Characteristics
Fig. 11 - Forward Power Loss Characteristics
Fig. 12 - Forward Power Loss Characteristics
0
10
20
30
40
50
60
70
0 5 10 15 20 25 30 35 40
Average Forward Current (A)
RM S Lim it
Maximum Average Forward Power Loss (W)
Conduction Angle
180°
120°
90°
60°
30°
T4 0 HFL . . Se r i e s
T = 1 2 5 ° C
J
0
10
20
30
40
50
60
70
80
90
0 10203040506070
DC
180°
120°
90°
60°
30°
RM S Li m i t
Conduction Period
Average Forward Current (A)
Maximum Average Forward Power Lo ss (W)
T4 0 H FL. . Se r i e s
T = 125°C
J
0
10
20
30
40
50
60
70
80
90
100
0 10203040506070
Average Forward Current (A)
RM S Li m it
Maximum Average Forward Power Loss (W)
Conduction Angle
180°
120°
90°
60°
30°
T7 0 H FL. . Se r i e s
T = 125°C
J
0
20
40
60
80
100
120
140
020406080100120
DC
180°
120°
90°
60°
30°
RM S Li m i t
Conduc tion Period
Avera g e Fo rwa rd Current (A)
Maximum Average Forward Power Loss (W)
T70HFL.. Series
T = 1 2 5 ° C
J
0
10
20
30
40
50
60
70
80
90
100
110
0 102030405060708090
Average Forward Current (A)
RM S Li m it
Maximum Average Forward Power Loss (W)
Conduction Angle
180°
120°
90°
60°
30°
T85HFL.. Series
T = 125°C
J
0
20
40
60
80
100
120
140
160
0 20 40 60 80 100 120 140
DC
180°
120°
90°
60°
30°
RM S Li m i t
Conduction Period
Average Forward Current (A)
Maximum Average Forward Power Loss (W)
T85HFL.. Series
T = 1 2 5 ° C
J
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T40HFL, T70HFL, T85HFL Series
Vishay Semiconductors Fast Recovery Diodes
(T-Modules), 40 A/70 A/85 A
Fig. 13 - Maximum Non-Repetitive Surge Current
Fig. 14 - Maximum Non-Repetitive Surge Current
Fig. 15 - Maximum Non-Repetitive Surge Current
Fig. 16 - Maximum Non-Repetitive Surge Current
Fig. 17 - Maximum Non-Repetitive Surge Current
Fig. 18 - Maximum Non-Repetitive Surge Current
100
150
200
250
300
350
400
450
110100
Pe a k Ha lf Sine Wave Forward Current (A)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
T4 0 HFL. . Se r i e s
Init ial T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
At Any Rated Load Condition And With
Ra t e d V A p p l ie d Fo ll o w i n g Sur g e .
RRM
J
100
150
200
250
300
350
400
450
500
0.01 0.1 1
Peak Half Sine Wave Forward Current (A)
Pulse Train Duration (s)
Maximum Non Rep etitive Surge Current
T4 0 HFL. . Se r i e s
Init ia l T = 125°C
No Volta ge Rea p plied
Ra t e d V Re a p p l i e d
Versus Pulse Train Duration.
RRM
J
200
300
400
500
600
700
800
110100
Pea k Half Sine Wave Forward Current (A)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
T70HFL.. Series
Initia l T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
At Any Rated Load Condition And With
Rated V Applied Following Surge.
J
RRM
150
250
350
450
550
650
750
850
0.01 0.1 1
Pea k Ha lf Sin e Wa ve Fo rw a rd Curren t (A)
Pulse Tra in Dura tio n (s)
Maximum Non Repetitive Surge Current
T7 0 HFL. . Se r i e s
Initia l T = 125°C
No Volta g e Rea pp lied
Rated V Rea pp lied
Versus Pulse Train Duration.
RRM
J
300
400
500
600
700
800
900
1000
1100
1200
110100
Peak Half Sine Wave Forwa rd Current (A)
Number Of Eq ua l Amplit ud e Half Cyc le Current Pulses (N)
T85HFL.. Series
Init ia l T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
At Any Rated Load Co ndition And With
Rated V Ap plied Following Surge.
RRM
J
300
400
500
600
700
800
900
1000
1100
1200
1300
0.01 0.1 1
Peak Half Sine Wave Forward Current (A)
Pulse Train Duration (s)
Ma ximum Non Repetitive Surge Current
Init ia l T = 125°C
No Vo lta g e Rea p p lied
Rated V Reapplied
Versus Pulse Train Duration.
RRM
J
T8 5 HFL. . Se r i e s
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T40HFL, T70HFL, T85HFL Series
Fast Recovery Diodes
(T-Modules), 40 A/70 A/85 A Vishay Semiconductors
Fig. 19 - Recovery Time Characteristics
Fig. 20 - Recovery Charge Characteristics
Fig. 21 - Recovery Current Characteristics
Fig. 22 - Recovery Time Characteristics
Fig. 23 - Recovery Charge Characteristics
Fig. 24 - Recovery Current Characteristics
0.45
0.46
0.47
0.48
0.49
0.5
0.51
00101
100A
220A
172A
50A
Rate Of Fa ll Of Forward Current - di/ d t (A/ µs)
Maximum Reverse Recovery Time - Trr (µs)
I = 300A
FM
T4 0 H FL. . S0 2
T7 0 H FL. . S0 2
T = 1 2 5 ° C
J
1
2
3
4
5
6
7
8
10 20 30 40 50 60 70 80 90 100
100A
220A
172A
50A
Rate Of Fall Of Forward Current - di/dt (A/µs)
Ma ximum Re ve rse Rec o ve ry Cha rg e - Qrr (µC)
I = 300A
FM
T4 0 HFL. . S0 2
T7 0 HFL. . S0 2
T = 1 2 5 ° C
J
4
6
8
10
12
14
16
18
20
10 20 30 40 50 60 70 80 90 100
100A
220A
172A
50A
Rate Of Fall Of Forward Current - di/dt (A/µs)
Maximum Reverse Recovery Current - Irr (A)
I = 300A
T4 0 HFL. . S0 2
T7 0 HFL. . S0 2
T = 1 2 5 ° C
FM
J
0.6
0.7
0.8
0.9
1
1.1
00101
100A
220A
172A
50A
Maximum Reverse Rec overy Time - Trr (µs)
Rate Of Fall Of Forward Current - di/ dt (A/µs)
I = 300A
FM
T4 0 HFL. . S0 5
T7 0 HFL. . S0 5
T = 1 2 5 ° C
J
4
6
8
10
12
14
16
18
20
10 20 30 40 50 60 70 80 90 100
Ra te O f Fa ll Of Forward Current - di/ dt (A/ µs)
Maximum Reverse Recovery Charge - Qrr (µC)
220A
172A
100A
50A
I = 300A
FM
T4 0 HFL. . S0 5
T7 0 HFL. . S0 5
T = 1 2 5 ° C
J
6
8
10
12
14
16
18
20
22
24
26
28
10 20 30 40 50 60 70 80 90 100
220A
172A
100A
50A
M aximum Reve rse Re c ove ry Cu rren t - Irr ( A)
Rate Of Fall Of Forward Current - di/dt (A/µs)
I = 300A
FM
T4 0 H F L. . S0 5
T7 0 H F L. . S0 5
T = 125 °C
J
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T40HFL, T70HFL, T85HFL Series
Vishay Semiconductors Fast Recovery Diodes
(T-Modules), 40 A/70 A/85 A
Fig. 25 - Recovery Time Characteristics
Fig. 26 - Recovery Charge Characteristics
Fig. 27 - Recovery Current Characteristics
Fig. 28 - Recovery Time Characteristics
Fig. 29 - Recovery Charge Characteristics
Fig. 30 - Recovery Current Characteristics
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
00101
100A
50A
200A
Maximum Reverse Recovery Time - Trr (µs)
Rate Of Fall Of Forward Current - di/d t (A/µs)
I = 300A
FM
T4 0 H F L. . S1 0
T7 0 H F L. . S1 0
T = 125 °C
J
5
10
15
20
25
30
35
40
10 20 30 40 50 60 70 80 90 100
100A
50A
200A
Maximum Reverse Re c ove ry Charge - Qrr (µC)
Ra te Of Fa ll Of Fo rwa rd Current - d i/ d t (A/ µs)
I = 300A
FM
T4 0 H FL. . S1 0
T7 0 H FL. . S1 0
T = 1 2 5 ° C
J
10
15
20
25
30
35
40
45
10 20 30 40 50 60 70 80 90 100
100A
50A
200A
Maximum Reverse Recovery Current - Irr (A)
Ra te Of Fa ll Of Forward Current - di/ d t (A/ µs)
I = 300A
FM
T4 0 H FL. . S1 0
T7 0 H FL. . S1 0
T = 1 2 5 ° C
J
0.6
0.7
0.8
0.9
1
1.1
1.2
00101
100A
50A
200A
Ma xim um Reverse Re c ove ry Tim e - Trr ( µs)
Rate Of Fall Of Forward Current - di/dt (A/µs)
T8 5 H FL . . S0 2
T = 1 2 5 ° C
I = 300A
J
FM
5
10
15
20
25
10 20 30 40 50 60 70 80 90 100
200A
100A
50A
Maximum Reverse Recovery Charge - Qrr (µC)
Rate Of Fall Of Forward Current - di/dt (A/µs)
T8 5 H FL . . S0 2
T = 1 2 5 ° C
I = 300A
J
FM
6
8
10
12
14
16
18
20
22
24
26
28
10 20 30 40 50 60 70 80 90 100
200A
100A
50A
Ma xim um Reverse Rec o ve ry C urre nt - Irr (A)
Ra t e O f Fa l l O f Fo r w a r d C u r re n t - d i/ d t ( A / µ s)
T8 5 H FL . . S0 2
T = 125°C
I = 300A
J
FM
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T40HFL, T70HFL, T85HFL Series
Fast Recovery Diodes
(T-Modules), 40 A/70 A/85 A Vishay Semiconductors
Fig. 31 - Recovery Time Characteristics
Fig. 32 - Recovery Charge Characteristics
Fig. 33 - Recovery Current Characteristics
Fig. 34 - Recovery Time Characteristics
Fig. 35 - Recovery Charge Characteristics
Fig. 36 - Recovery Current Characteristics
0.8
0.9
1
1.1
1.2
1.3
00101
100A
50A
200A
Ma ximum Reverse Re c ove ry Time - Trr (µs)
Rate Of Fall Of Forward Current - di/dt (A/µs)
I = 300A
T8 5 H FL. . S0 5
T = 1 2 5 ° C
FM
J
6
9
12
15
18
21
24
27
30
10 20 30 40 50 60 70 80 90 100
200A
Maximum Reverse Recovery Charge - Qrr (µC)
Ra t e O f Fa l l O f Fo rw a r d C u rr e n t - d i / d t ( A / µ s)
T8 5 H FL . . S0 5
T = 1 2 5 ° C
100A
50A
J
I = 300A
FM
10
15
20
25
30
35
10 20 30 40 50 60 70 80 90 100
100A
50A
200A
Maximum Reverse Rec overy Current - Irr (A)
Ra t e O f Fa l l O f Fo r w a r d C u r r e n t - d i / d t ( A / µ s)
T8 5 H FL . . S0 5
T = 125°C
I = 300A
J
FM
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2
00101
100A
50A
200A
Maximum Reverse Recovery Time - Trr (µs)
Rate Of Fall Of Forward Current - di/dt (A/µs)
T8 5 HFL. . S1 0
T = 125°C
I = 300A
J
FM
10
15
20
25
30
35
40
45
50
55
10 20 30 40 50 60 70 80 90 100
200A
Maximum Reverse Recovery Charge - Qrr (µC)
Rate Of Fall Of Forward Current - di/dt (A/µs)
100A
50A
T8 5 H FL. . S1 0
T = 125°C
J
I = 300A
FM
15
20
25
30
35
40
45
50
55
60
10 20 30 40 50 60 70 80 90 100
100A
50A
200A
Ma ximum Reverse Re c overy Current - Irr (A)
I = 300A
T8 5 H F L. . S1 0
T = 125°C
Rate Of Fall Of Forward Current - di/dt (A/µs)
FM
J
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T40HFL, T70HFL, T85HFL Series
Vishay Semiconductors Fast Recovery Diodes
(T-Modules), 40 A/70 A/85 A
Fig. 37 - Frequency Characteristics
Fig. 38 - Frequency Characteristics
Fig. 39 - Maximum Forward Energy Power Loss Characteristics
1E1
1E2
1E3
1E4
1E1 1E2 1E3 1E
4
50 Hz
400
1000 200
1500
2500
10000
20000 5000
Peak Forward Current (A)
Pu l se Ba se w id t h ( µ s)
tp
1E4
T4 0 H FL. . Se r i e s
Si n u so i d a l Pu l se
T = 70°C
C
1
E1 1E2 1E3 1 E4
50 Hz
400
1000
200
1500
2500
5000
Pulse Ba se w i d t h ( µs)
T4 0 HFL . . Series
Tr a p e z o i d a l Pu l se
T = 7 0 ° C
C
tp
1E1
1E1
1E2
1E3
1E4
1E1 1E2 1E3 1E4
50 Hz4001000 200
15002500
1000020000 5000
Peak Forward Current (A)
Pulse Basewidth (µs)
tp
1E4
Si n u so i d a l Pu l se
T = 90°C
C
T40HFL.. Se ries
E1 1E2 1E3 1 E4
50 Hz
400
1000 200
1500
2500
5000
Pu lse Ba se w id t h ( µs)
Tr a p e zo i d a l Pu l se
tp
T4 0 H FL . .
1E1
T = 90 ° C
C
1E0
1E1
1E2
1E3
1E4
1E1 1E2 1E3 1E
4
0.01
0.02
0.040.1 0.20.4 12410
20 joule s p er p ulse
Peak Forward Current (A)
Pulse Basewidth (µs)
tp
1E4
T40HFL.. Series
Sinuso id al Pulse
T = 125 °C
J
1
E1 1E2 1E3 1 E4
0.01
0.02
0.040.1
0.2
0.4 12410 20 joules p er pulse
Tr a p e z o i d a l P u l se
Pu lse Ba se w i d t h ( µ s)
T40HFL.. Se ries
T = 125°C
di/dt = 50A/µs
1E1
tp
J
Document Number: 93184 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 19-May-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 11
T40HFL, T70HFL, T85HFL Series
Fast Recovery Diodes
(T-Modules), 40 A/70 A/85 A Vishay Semiconductors
Fig. 40 - Frequency Characteristics
Fig. 41 - Frequency Characteristics
Fig. 42 - Maximum Forward Energy Power Loss Characteristics
1E1
1E2
1E3
1E4
1E1 1E2 1E3 1 E4
50 Hz
400
1000 200
1500
2500
1000020000 5000
Peak Forward Current (A)
Pulse Ba se w id t h (µ s)
tp
1E4
T70 H FL . . Se r i e s
Sinuso id a l Pulse
T = 7 0 ° C
C
1E1 1E2 1E3 1E4
50 Hz
400
1000 200
1500
2500
5000
Pu l se Ba se w id t h ( µ s)
tp
1E1
T70HFL.. Series
Tr a p e zo i d a l P u l se
T = 70°C
C
1E1
1E2
1E3
1E4
1E1 1E2 1E3 1E4
50 Hz
4001000 200
1500
2500
10000
20000 5000
Pe a k Fo rw a rd C urre n t ( A )
Pu l se Ba se w id t h ( µ s)
tp
1E4
T7 0 H FL. . Se r i e s
Sinusoid al Pulse
T = 90°C
C
1E1 1E2 1E3 1E4
50 Hz400
1000
200
1500
2500
5000
Pu l se Ba se w i d t h ( µs)
tp
1E1
T7 0 H FL. . Se r i e s
Tr a p e z o i d a l Pu l se
T = 90°C
C
1E0
1E1
1E2
1E3
1E4
1E1 1E2 1E3 1E4
0.01
0.02
0.04
0.10.2
0.4
12
410
20 joules per pulse
Peak Forward Current (A)
Pu l se Ba se w id t h ( µ s)
tp
1E4
T7 0 H FL. . Se r i e s
Si n u so i d a l Pu l se
T = 125°C
J
1E11E21E31E4
0.1
20 joules per pulse
10
4
2
1
0.4
0.2
0.04
0.02
0.01
T7 0 H FL. . Se r i e s
Trapezoidal pulse
T = 125°C
di/dt = 50A/µs
Pulse Basewidth (µs)
1E1
tp
J
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 93184
12 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 19-May-10
T40HFL, T70HFL, T85HFL Series
Vishay Semiconductors Fast Recovery Diodes
(T-Modules), 40 A/70 A/85 A
Fig. 43 - Frequency Characteristics
Fig. 44 - Frequency Characteristics
Fig. 45 - Maximum Forward Energy Power Loss Characteristics
1E1
1E2
1E3
1E4
1E1 1E2 1E3 1E4
50 Hz
400
1000 20015002500
10000
20000
5000
Pu l se Ba se w i d t h ( µ s)
Peak Forward Current (A)
tp
1E4
T85HFL.. Series
Si n u so i d a l Pu l se
T = 7 0° C
C
1E1 1E2 1E3 1E4
50 Hz400
1000 200
1500
25005000
Pu lse Ba se w id t h ( µs)
tp
1E1
T85HFL.. Se ries
Tr a p e z o i d a l Pu l se
T = 70°C
C
1E1
1E2
1E3
1E4
1E1 1E2 1E3 1E4
50 Hz
400
1000 200
15002500
1000020000 5000
Peak Forward Current (A)
Pu lse Ba se w i d t h ( µ s)
tp
1E4
T85HFL.. Series
Sinusoid a l Pulse
T = 90°C
C
1E1 1E2 1E3 1E4
50 Hz400
1000 200
1500
2500
5000
Pu l se Ba se w id t h ( µ s)
tp
1E1
T85HFL.. Series
Trapezoidal Pulse
T = 90°C
C
1E0
1E1
1E2
1E3
1E4
1E1 1E2 1E3 1E4
0.01
0.02
0.04
0.1
0.2
0.4
12
4
10
20 joules per pulse
Pe a k Forw a rd C urre n t ( A )
Pu l se Ba se w id t h ( µ s)
tp
1E4
T85HFL.. Se ries
Si n u so i d a l Pu l se
T = 125 °C
J
1E11E21E31E4
0.01
0.02
0.040.1
0.2
0.4 1
2
410
20 jo ules p e r pu lse
Pulse Basewidth (µs)
tp
1E1
T8 5 H FL. . Se r i e s
Tra pezoid al Pulse
T = 125°C
di/dt = 50A/µs
J
Document Number: 93184 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 19-May-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 13
T40HFL, T70HFL, T85HFL Series
Fast Recovery Diodes
(T-Modules), 40 A/70 A/85 A Vishay Semiconductors
Fig. 46 - Forward Voltage Drop Characteristics Fig. 47 - Forward Voltage Drop Characteristics
Fig. 48 - Forward Voltage Drop Characteristics
Fig. 49 - Thermal Impedance ZthJC Characteristics
1
10
100
1000
0.5 1 1.5 2 2.5 3 3.5 4 4.5
T = 25°C
J
Instanta neous Forward Current (A)
Instantaneous Forward Voltage (V)
T = 1 2 5 ° C
J
T4 0 H FL. . Se r i e s
1
10
100
1000
10000
01234567
T = 2 5 ° C
J
In st a n t a n e o u s Fo r wa rd C u rr e n t ( A )
Instantaneous Forward Voltage (V)
T7 0 HFL. . Se r i e s
T = 1 2 5 ° C
J
10
100
1000
10000
01234567
T = 2 5 ° C
J
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
T = 1 2 5 ° C
J
T8 5 H FL. . Se r i e s
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Square Wave Pulse Duration (s)
thJC
Tr a n si e n t Th e r m a l I m p e d a n c e Z ( K/ W)
St e a d y St a t e V a l u e :
R = 0.85 K/ W
R = 0.53 K/ W
R = 0.46 K/ W
(DC Operation)
T4 0 H FL. . Se r i e s
T7 0 H FL. . Se r i e s
T8 5 H FL. . Se r i e s
thJC
thJC
thJC
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 93184
14 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 19-May-10
T40HFL, T70HFL, T85HFL Series
Vishay Semiconductors Fast Recovery Diodes
(T-Modules), 40 A/70 A/85 A
ORDERING INFORMATION TABLE
CIRCUIT CONFIGURATION
CIRCUIT CIRCUIT
CONFIGURATION CODE CIRCUIT DRAWING
Single switch diode N/A
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95313
1- Module type
2- Current rating
3- Fast recovery diode
4- Voltage code x 10 = VRRM
5-t
rr code
S02 = 200 ns
S05 = 500 ns
S10 = 1000 ns
40 = 40 A (average)
70 = 70 A (average)
85 = 85 A (average)
Device code
51324
T 40 HFL 100 S10
+-
Document Number: 95313 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 01-Jul-08 1
D-55 T-Module Diode Standard and Fast Recovery
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
3 (0.12)
3.9 (0.15) 8 (0.31)
M5
30 (1.18)
27 (1.06)
41 (1.61) MAX.
25 ± 1 23.5 (0.93)
+
-
11
(0.43)
18
(0.71)
15 (0.59)
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Revision: 12-Mar-12 1Document Number: 91000
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