MBT3904DW1T1G, MBT3904DW2T1G, SMMBT3904DW1TG Dual General Purpose Transistors The MBT3904DW1T1G and MBT3904DW2T1G devices are a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount applications where board space is at a premium. Features * * * * * * * * * hFE, 100-300 Low VCE(sat), 0.4 V Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7-inch/3,000 Unit Tape and Reel AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com MARKING DIAGRAM 6 SOT-363/SC-88/ SC70-6 CASE 419B 6 1 1 XX = MA for MBT3904DW1T1G MJ for MBT3904DW2T1G M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) (3) (2) Q2 (4) (5) Symbol Value Unit VCEO 40 Vdc Collector -Base Voltage VCBO 60 Vdc Emitter -Base Voltage VEBO 6.0 Vdc IC 200 mAdc Electrostatic Discharge ESD HBM Class 2 MM Class B Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit PD 150 mW Thermal Resistance, Junction-to-Ambient RqJA 833 C/W Junction and Storage Temperature Range TJ, Tstg Total Package Dissipation (Note 1) TA = 25C -55 to +150 C 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint. (c) Semiconductor Components Industries, LLC, 2011 November, 2011 - Rev. 8 (6) MBT3904DW1T1 STYLE 1 Collector -Emitter Voltage Collector Current - Continuous (1) Q1 MAXIMUM RATINGS Rating XX MG G 1 (3) (2) (1) Q2 Q1 (4) (5) (6) MBT3904DW2T1 STYLE 27 ORDERING INFORMATION Package Shipping SOT-363 (Pb-Free) 3000 / Tape & Reel SMMBT3904DW1TG SOT-363 (Pb-Free) 3000 / Tape & Reel MBT3904DW2T1G 3000 / Tape & Reel Device MBT3904DW1T1G SOT-363 (Pb-Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MBT3904DW1T1/D MBT3904DW1T1G, MBT3904DW2T1G, SMMBT3904DW1TG ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max 40 - 60 - 6.0 - - 50 - 50 40 70 100 60 30 - - 300 - - - - 0.2 0.3 0.65 - 0.85 0.95 300 - - 4.0 - 8.0 1.0 2.0 10 12 0.5 0.1 8.0 10 100 100 400 400 1.0 3.0 40 60 - - 5.0 4.0 Unit OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (Note 2) (IC = 1.0 mAdc, IB = 0) V(BR)CEO Collector -Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO Emitter -Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) IBL Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) ICEX Vdc Vdc Vdc nAdc nAdc ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) hFE Collector -Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VCE(sat) Base -Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VBE(sat) - Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current -Gain - Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) fT Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hie Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hre Small -Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hfe Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hoe Noise Figure (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k W, f = 1.0 kHz) NF 2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%. http://onsemi.com 2 MHz pF pF kW X 10- 4 - mmhos dB MBT3904DW1T1G, MBT3904DW2T1G, SMMBT3904DW1TG SWITCHING CHARACTERISTICS Symbol Min Max Delay Time (VCC = 3.0 Vdc, VBE = - 0.5 Vdc) Characteristic td - 35 Rise Time (IC = 10 mAdc, IB1 = 1.0 mAdc) tr - 35 Storage Time (VCC = 3.0 Vdc, IC = 10 mAdc) ts - 200 Fall Time (IB1 = IB2 = 1.0 mAdc) tf - 50 DUTY CYCLE = 2% 300 ns +3 V +10.9 V 10 < t1 < 500 ms 275 DUTY CYCLE = 2% t1 Unit ns ns +3 V +10.9 V 275 10 k 10 k 0 -0.5 V Cs < 4 pF* < 1 ns 1N916 -9.1 V < 1 ns * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit http://onsemi.com 3 Cs < 4 pF* MBT3904DW1T1G, MBT3904DW2T1G, SMMBT3904DW1TG TYPICAL TRANSIENT CHARACTERISTICS TJ = 25C TJ = 125C 10 5000 2000 5.0 Q, CHARGE (pC) CAPACITANCE (pF) VCC = 40 V IC/IB = 10 3000 7.0 Cibo 3.0 Cobo 2.0 1000 700 500 QT 300 200 QA 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 100 70 50 20 30 40 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) Figure 3. Capacitance Figure 4. Charge Data 500 200 500 IC/IB = 10 100 70 tr @ VCC = 3.0 V 50 30 20 VCC = 40 V IC/IB = 10 300 200 t r, RISE TIME (ns) 300 200 TIME (ns) 1.0 REVERSE BIAS VOLTAGE (VOLTS) 40 V 100 70 50 30 20 15 V 10 7 5 10 2.0 V td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) Figure 5. Turn -On Time Figure 6. Rise Time IC/IB = 10 200 500 ts = ts - 1/8 tf IB1 = IB2 VCC = 40 V IB1 = IB2 300 200 IC/IB = 20 t f , FALL TIME (ns) t s , STORAGE TIME (ns) IC/IB = 20 200 IC, COLLECTOR CURRENT (mA) 500 300 200 7 5 100 70 IC/IB = 20 50 IC/IB = 10 30 20 100 70 50 10 10 7 5 7 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC/IB = 10 30 20 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. Storage Time Figure 8. Fall Time http://onsemi.com 4 200 MBT3904DW1T1G, MBT3904DW2T1G, SMMBT3904DW1TG TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = 5.0 Vdc, TA = 25C, Bandwidth = 1.0 Hz) 14 12 SOURCE RESISTANCE = 200 W IC = 1.0 mA f = 1.0 kHz SOURCE RESISTANCE = 200 W IC = 0.5 mA 8 6 SOURCE RESISTANCE = 1.0 k IC = 50 mA 4 SOURCE RESISTANCE = 500 W IC = 100 mA 2 0 0.1 0.2 0.4 1.0 2.0 IC = 1.0 mA 12 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 10 IC = 0.5 mA 10 IC = 50 mA 8 IC = 100 mA 6 4 2 4.0 10 20 40 0 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k OHMS) Figure 9. Noise Figure Figure 10. Noise Figure 40 100 5.0 10 5.0 10 h PARAMETERS (VCE = 10 Vdc, f = 1.0 kHz, TA = 25C) 100 hoe, OUTPUT ADMITTANCE (m mhos) h fe , CURRENT GAIN 300 200 100 70 50 30 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 50 20 10 5 2 1 10 0.1 0.2 Figure 11. Current Gain h ie , INPUT IMPEDANCE (k OHMS) 10 5.0 2.0 1.0 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 hre , VOLTAGE FEEDBACK RATIO (x 10 -4) Figure 12. Output Admittance 20 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.1 Figure 13. Input Impedance 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) Figure 14. Voltage Feedback Ratio http://onsemi.com 5 MBT3904DW1T1G, MBT3904DW2T1G, SMMBT3904DW1TG h FE, DC CURRENT GAIN (NORMALIZED) TYPICAL STATIC CHARACTERISTICS 2.0 TJ = +125C VCE = 1.0 V +25C 1.0 0.7 -55C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 70 50 100 200 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 15. DC Current Gain 1.0 TJ = 25C 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) Figure 16. Collector Saturation Region 1.0 1.2 TJ = 25C VBE(sat) @ IC/IB =10 0.8 VBE @ VCE =1.0 V 0.6 0.4 VCE(sat) @ IC/IB =10 qVC FOR VCE(sat) 0 -55C TO +25C -0.5 -55C TO +25C -1.0 +25C TO +125C qVB FOR VBE(sat) -1.5 0.2 0 +25C TO +125C 0.5 COEFFICIENT (mV/ C) V, VOLTAGE (VOLTS) 1.0 1.0 2.0 5.0 10 20 50 100 -2.0 200 0 20 40 60 80 100 120 140 160 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 17. "ON" Voltages Figure 18. Temperature Coefficients http://onsemi.com 6 180 200 MBT3904DW1T1G, MBT3904DW2T1G, SMMBT3904DW1TG TYPICAL STATIC CHARACTERISTICS 1 VCE = 1 V TA = 25C IC, COLLECTOR CURRENT (A) fT, CURRENT-GAIN-BANDWIDTH PRODUCT (MHz) 1000 100 10 0.1 1 10 100 1000 10 mSec 100 mSec 0.1 1.0 Sec Thermal Limit 0.01 0.001 1.0 mSec 1 10 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 19. Current Gain Bandwidth Product Figure 20. Safe Operating Area http://onsemi.com 7 100 MBT3904DW1T1G, MBT3904DW2T1G, SMMBT3904DW1TG PACKAGE DIMENSIONS SOT-363/SC-88/SC70-6 CASE 419B-02 ISSUE W D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B-01 OBSOLETE, NEW STANDARD 419B-02. e 6 5 4 HE DIM A A1 A3 b C D E e L HE -E- 1 2 3 b 6 PL 0.2 (0.008) M E M A3 STYLE 1: PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 C A A1 MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 STYLE 27: PIN 1. BASE 2 2. BASE 1 3. COLLECTOR 1 4. EMITTER 1 5. EMITTER 2 6. COLLECTOR 2 L SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. 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