FES(F,B)16AT thru FES(F,B)16JT Vishay General Semiconductor Ultrafast Plastic Rectifier TO-220AC FEATURES * Glass passivated chip junction ITO-220AC * Ultrafast recovery time * Low switching losses, high efficiency * High forward surge capability 2 * Meets MSL level 1, per J-STD-020C, LF max peak of 245 C (for TO-263AB package) * Solder Dip 260 C, 40 seconds (for TO-220AC & ITO-220AC package) * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 2 1 1 FES16xT Series FESF16xT Series PIN 1 PIN 1 CASE PIN 2 PIN 2 TO-263AB K TYPICAL APPLICATIONS 2 For use in high frequency rectifier of switching mode power supplies, inverters, freewheeling diodes, dc-to-dc converters, and other power switching application. 1 FESB16xT Series K PIN 1 HEATSINK PIN 2 MECHANICAL DATA MAJOR RATINGS AND CHARACTERISTICS IF(AV) 16 A VRRM 50 V to 600 V IFSM 250 A trr 35 ns, 50 ns VF 0.975 V, 1.30 V, 1.50 V Tj max. 150 C Case: TO-220AC, ITO-220AC, TO-263AB Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002B and JESD22-B102D E3 suffix for commercial grade, HE3 suffix for high reliability grade (AEC Q101 qualified) Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TC = 25 C unless otherwise noted) SYMBOL FES 16AT FES 16BT FES 16CT FES 16DT FES 16FT FES 16GT FES 16HT FES 16JT UNIT Maximum repetitive peak reverse voltage VRRM 50 100 150 200 300 400 500 600 V Maximum RMS voltage PARAMETER VRMS 35 70 105 140 210 280 350 420 V Maximum DC blocking voltage VDC 50 100 150 200 300 400 500 600 V Maximum average forward rectified current at TC = 100 C IF(AV) 16 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 250 A TJ, TSTG - 65 to + 150 C VAC 1500 V Operating storage and temperature range Isolation voltage (ITO-220AC only) From terminal to heatsink t = 1 minute Document Number 88599 27-Jun-06 www.vishay.com 1 FES(F,B)16AT thru FES(F,B)16JT Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL Maximum instantaneous at 16 A forward voltage (1) VF Maximum DC reverse current at rated DC blocking voltage TC = 25 C TC = 100 C IR Maximum reverse recovery time at IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr Typical junction capacitance at 4.0 V, 1 MHz CJ FES 16AT FES 16BT FES 16CT FES 16DT FES 16FT 0.975 FES 16GT FES 16HT 1.30 FES 16JT UNIT 1.50 V 10 500 A 35 50 ns 175 145 pF Note: (1) Pulse test: 300 s pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TC = 25 C unless otherwise noted) PARAMETER Typical thermal resistance junction to case SYMBOL FES FESF FESB UNIT RJC 1.2 1.7 1.2 C/W ORDERING INFORMATION PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE 1.78 45 50/Tube Tube 45 50/Tube Tube 45 50/Tube Tube 800/Reel Tape Reel TO-220AC FES16JT-E3/45 ITO-220AC FESF16JT-E3/45 1.80 TO-263AB FESB16JT-E3/45 1.33 TO-263AB FESB16JT-E3/81 1.33 81 20 300 Resistive or Inductive Load Peak Forward Surge Current (A) Average Forward Rectified Current (A) RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 16 12 8 4 0 Tj = Tj max. 8.3 ms Single Half Sine-Wave JEDEC Method 250 200 150 100 50 0 0 50 100 150 1 100 10 Case Temperature (C) Number of Cycles at 60 Hz Figure 1. Maximum Forward Current Derating Curve Figure 2. Maximum Non-Repetitive Peak Forward Surge Current www.vishay.com 2 Document Number 88599 27-Jun-06 FES(F,B)16AT thru FES(F,B)16JT Vishay General Semiconductor 1000 Tj = 25 C f = 1.0 MHz Vsig = 50 mVp-p Tj = 125 C 10 50 - 200 V 300 - 400 V 500 - 600 V 1 Tj = 25 C 0.1 0.2 Junction Capacitance (pF) Instantaneous Forward Current (A) 80 100 50 - 400 V 500 - 600 V 10 0.4 0.6 0.8 1.0 1.4 1.2 1.6 Instantaneous Forward Voltage (V) 0.1 1 100 10 Reverse Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Figure 5. Typical Junction Capacitance Instantaneous Reverse Leakage Current (A) 1000 50 - 200 V 300 - 400 V Tj = 25 C 100 10 Tj = 25 C Tj = 100 C 1 0.1 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Figure 4. Typical Reverse Leakage Characteristics Document Number 88599 27-Jun-06 www.vishay.com 3 FES(F,B)16AT thru FES(F,B)16JT Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) ITO-220AC TO-220AC 0.404 0.384 0.076 (1.93) 0.415 (10.54)MAX. 0.370 (9.40) 0.360 (9.14) 0.154 (3.91) DIA. 0.148 (3.74) 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 0.350 (8.89) 0.330 (8.38) 0.635 (16.13) 0.625 (15.87) 1 2 0.076 Ref. (1.93) Ref. 0.140 (3.56) DIA. 0.125 (3.17) DIA. 7 Ref. 0.191 (4.85) 0.171 (4.35) 0.560 (14.22) 0.530 (13.46) 0.560 (14.22) 0.530 (13.46) PIN 1 0.135 (3.43) DIA. 0.122 (3.08) DIA. 0.671 (17.04) 7 Ref. 0.651 (16.54) 0.350 (8.89) 0.330 (8.38) 2 1 Copper exposure 0.010 (0.25) Max. 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.110 (2.79) 0.100 (2.54) CASE PIN 2 0.105 (2.67) 0.095 (2.41) 0.110 (2.79) 0.100 (2.54) PIN 1.148 (29.16) 1.118 (28.40) 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.600 (15.24) 0.580 (14.73) 0.603 (15.32) 0.573 (14.55) 0.190 (4.83) 0.170 (4.32) See note 7 Ref. 45 Ref. 0.145 (3.68) 0.135 (3.43) PIN See note (10.26) (9.75) Ref. ref. 0.037 (0.94) 0.027(0.68) 0.205(5.20) 0.195(4.95) 0.035 (0.89) 0.025 (0.64) 0.025 (0.64) 0.015 (0.38) 0.022(0.56) 0.014(0.36) 0.205 (5.21) 0.195 (4.95) 0.028 (0.71) 0.020 (0.51) Note: Copper exposure is allowable for 0.005 (0.13) Max. from the body TO-263AB 0.41 1 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN K 0.360 (9.14) 0.320 (8.13) 1 K 2 0.624 (15.85) 0.591(15.00) 0.055 (1.40) 0.045 (1.14) 0-0.01 (0-0.254) 0.105 (2.67) 0.095 (2.41) www.vishay.com 4 0.205 (5.20) 0.195 (4.95) 0.42 MIN. (10.66) 0.33 (8.38) MIN. 0.055 (1.40) 0.047 (1.19) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) Mounting Pad Layout 0.140 (3.56) 0.110 (2.79) 0.670 (17.02) 0.591 (15.00) 0.15 (3.81) MIN. 0.08 MIN. (2.032) 0.105 (2.67) (0.095) (2.41) Document Number 88599 27-Jun-06 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1