Vishay General Semiconductor
FES(F,B)16AT thru FES(F,B)16JT
Document Number 88599
27-Jun-06
www.vishay.com
1
Ultrafast Plastic Rectifier
FEATURES
Glass passivated chip junction
Ultrafast recovery time
Low switching losses, high efficiency
High forward surge capability
Meets MSL level 1, per J-STD-020C, LF max peak
of 245 °C (for TO-263AB package)
Solder Dip 260 °C, 40 seconds (for TO-220AC &
ITO-220AC package)
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, inverters, freewheeling diodes,
dc-to-dc converters, and other power switching
application.
MECHANICAL DATA
Case: TO-220AC, ITO-220AC, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAJOR RATINGS AND CHARACTERISTICS
IF(AV) 16 A
VRRM 50 V to 600 V
IFSM 250 A
trr 35 ns, 50 ns
VF0.975 V, 1.30 V, 1.50 V
Tj max. 150 °C
TO-263AB
1
2
CASE
PIN 2
PIN 1
TO-220AC ITO-220AC
PIN 1
PIN 2
K
HEATSINK
1
2
1
2
K
FES16xT Series FESF16xT Series
FESB16xT Series
PIN 2
PIN 1
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER SYMBOL FES
16AT
FES
16BT
FES
16CT
FES
16DT
FES
16FT
FES
16GT
FES
16HT
FES
16JT UNIT
Maximum repetitive
peak reverse voltage VRRM 50 100 150 200 300 400 500 600 V
Maximum RMS voltage VRMS 35 70 105 140 210 280 350 420 V
Maximum DC blocking voltage VDC 50 100 150 200 300 400 500 600 V
Maximum average forward
rectified current at TC = 100 °C IF(AV) 16 A
Peak forward surge current
8.3 ms single half sine-wave
superimposed on rated load
IFSM 250 A
Operating storage and
temperature range TJ, TSTG - 65 to + 150 °C
Isolation voltage (ITO-220AC only)
From terminal to heatsink t = 1 minute VAC 1500 V
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Document Number 88599
27-Jun-06
Vishay General Semiconductor
FES(F,B)16AT thru FES(F,B)16JT
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL FES
16AT
FES
16BT
FES
16CT
FES
16DT
FES
16FT
FES
16GT
FES
16HT
FES
16JT UNIT
Maximum
instantaneous
forward voltage (1)
at 16 A VF 0.975 1.30 1.50 V
Maximum DC
reverse current at
rated DC blocking
voltage
TC = 25 °C
TC = 100 °C IR 10
500 µA
Maximum reverse
recovery time
at IF = 0.5 A,
IR = 1.0 A,
Irr = 0.25 A
trr 35 50 ns
Typical junction
capacitance at 4.0 V, 1 MHz CJ 175 145 pF
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER SYMBOL FES FESF FESB UNIT
Typical thermal resistance junction to case RθJC 1.2 1.7 1.2 °C/W
ORDERING INFORMATION
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AC FES16JT-E3/45 1.78 45 50/Tube Tube
ITO-220AC FESF16JT-E3/45 1.80 45 50/Tube Tube
TO-263AB FESB16JT-E3/45 1.33 45 50/Tube Tube
TO-263AB FESB16JT-E3/81 1.33 81 800/Reel Tape Reel
Figure 1. Maximum Forward Current Derating Curve
050 100 150
0
4
8
12
16
20
Resistive or Inductive Load
Average Forward Rectified Current (A)
Case Temperature (°C)
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
110 100
0
50
100
150
200
250
300
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
T
j
= T
j
max.
8.3 ms Single Half Sine-Wave
JEDEC Method
Document Number 88599
27-Jun-06
www.vishay.com
3
FES(F,B)16AT thru FES(F,B)16JT
Vishay General Semiconductor
Figure 3. Typical Instantaneous Forward Characteristics
Figure 4. Typical Reverse Leakage Characteristics
0.2 0.4 0.6 0.81.0 1.2 1.4 1.6
0.1
1
10
80
50 - 200 V
300 - 400 V
500 - 600 V
T
j
= 125 °C
T
j
= 25 °C
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
020 40 60 80100
0.1
1
10
100
1000
50 - 200 V
300 - 400 V
T
j
= 100 °C
T
j
= 25 °C
T
j
= 25 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Leakage
Current (µA)
Figure 5. Typical Junction Capacitance
0.1 110 100
10
100
1000
50 - 400 V
500 - 600 V
T
j
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Reverse Voltage (V)
Junction Capacitance (pF)
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Document Number 88599
27-Jun-06
Vishay General Semiconductor
FES(F,B)16AT thru FES(F,B)16JT
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.154 (3.91)
0.148(3.74)DIA.
0.113 (2.87)
0.103 (2.62)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.145 (3.68)
0.135 (3.43)
0.350 (8.89)
0.330 (8.38)
0.160 (4.06)
0.140 (3.56)
0.037 (0.94)
0.027(0.68)
0.205(5.20)
0.195(4.95)
0.560 (14.22)
0.530 (13.46)
0.022(0.56)
0.014(0.36)
0.110 (2.79)
0.100 (2.54)
12
1.148(29.16)
1.118(28.40)
0.105 (2.67)
0.095 (2.41)
0.635 (16.13)
0.625 (15.87)
0.603 (15.32)
0.573 (14.55)
PIN
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
0.057 (1.45)
0.045 (1.14)
CASE
PIN2
PIN1
TO-220AC
0.404 (10.26)
0.384 (9.75)
See note
0.076 Ref.
(1.93) ref.
45° Ref.
0.600 (15.24)
0.580 (14.73) PIN
12
0.560 (14.22)
0.530 (13.46)
0.025 (0.64)
0.015 (0.38)
0.035 (0.89)
0.025 (0.64)
0.205 (5.21)
0.195 (4.95)
0.057 (1.45)
0.045 (1.14)
0.191 (4.85)
0.171 (4.35)
0.671 (17.04)
0.651 (16.54)
0.076 Ref.
(1.93) Ref.
See note
Ref.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
Ref.
0.350 (8.89)
0.330 (8.38)
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.135 (3.43) DIA.
0.122 (3.08)DIA.
Ref.
0.110 (2.79)
0.100 (2.54)
0.028(0.71)
0.020 (0.51)
ITO-220AC
exposure
(0.25)0.010 Max.
Copper
Note: Copper exposure is allowable for 0.005 (0.13) Max. from the body
0.380 (9.65)
0.411 (10.45)
0.320 (8.13)
0.360 (9.14)
0.591(15.00)
0.624 (15.85)
12
0.245 (6.22)
MIN
K
K
0.160 (4.06)
0.190 (4.83)
0.045 (1.14)
0.055 (1.40)
0.014 (0.36)
0.021 (0.53)
0.110 (2.79)
0.140 (3.56)
0.110 (2.79)
0.090 (2.29)
0.047 (1.19)
0.055 (1.40)
0-0.01 (0-0.254)
0.027 (0.686)
0.037 (0.940)
0.105 (2.67)
0.095 (2.41) 0.205 (5.20)
0.195 (4.95)
TO-263AB
0.105 (2.67)
0.08
(0.095) (2.41)
(2.032)
0.42
(10.66)
0.670 (17.02)
0.591 (15.00)
0.15
(3.81)
0.33
(8.38)
MountingPad Layout
MIN.
MIN.
MIN.
MIN.
Legal Disclaimer Notice
Vishay
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
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