2N7002
Document number: DS11303 Rev. 37 - 2
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www.diodes.com
October 2019
© Diodes Incorporated
2N7002
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Product Summary
BVDSS
RDS(ON) Max
ID Max
TA = +25°C
60V
7.5Ω @ VGS = 5V
210mA
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Motor Control
Power Management Functions
Ordering Information (Note 4)
Part Number
Compliance
Case
Packaging
2N7002-7-F
Standard
SOT23
3,000/Tape & Reel
2N7002-13-F
Standard
SOT23
10,000/Tape & Reel
2N7002Q-7-F
Automotive
SOT23
3,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
Date Code Key
Year
2002
~
2018
2019
2020
2021
2022
2023
2024
2025
2026
Code
N
~
F
G
H
I
J
K
L
M
N
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
SOT23
Top View
Equivalent Circuit
Top View
D
GS
K72 = Product Type Marking Code
YM = Date Code Marking
Y or = Year (ex: G = 2019)
M = Month (ex: 9 = September)
Source
Gate
Drain
Y
K72
YM
e3
2N7002
Document number: DS11303 Rev. 37 - 2
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2N7002
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
60
V
Drain-Gate Voltage RGS 1.0M
VDGR
60
V
Gate-Source Voltage Continuous
Pulsed
VGSS
±20
±40
V
Continuous Drain Current (Note 5) VGS = 10V
Steady
State
TA = +25°C
TA = +85°C
TA = +100°C
ID
170
120
105
mA
Continuous Drain Current (Note 6) VGS = 10V
Steady
State
TA = +25°C
TA = +85°C
TA = +100°C
ID
210
150
135
mA
Maximum Continuous Body Diode Forward Current (Note 6) Pulsed
Continuous
IS
0.5
2
A
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
IDM
800
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Total Power Dissipation
(Note 5)
PD
370
mW
(Note 6)
540
Thermal Resistance, Junction to Ambient
(Note 5)
RθJA
348
°C/W
(Note 6)
241
Thermal Resistance, Junction to Case
(Note 6)
RθJC
91
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BVDSS
60
70
V
VGS = 0V, ID = 10µA
Zero Gate Voltage Drain Current @ TC = +25°C
@ TC = +125°C
IDSS
1.0
500
µA
VDS = 60V, VGS = 0V
Gate-Body Leakage
IGSS
±10
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(TH)
1.0
2.5
V
VDS = VGS, ID = 250µA
Static Drain-Source On-Resistance @ TJ = +25°C
@ TJ = +25°C
@ TJ = +125°C
RDS(ON)
3.2
4.4
7.5
5.0
13.5
VGS = 5.0V, ID = 0.05A
VGS = 10V, ID = 0.5A
VGS = 10V, ID = 0.5A
On-State Drain Current
ID(ON)
0.5
1.0
A
VGS = 10V, VDS = 7.5V
Forward Transconductance
gFS
80
mS
VDS =10V, ID = 0.2A
Diode Forward Voltage
VSD
0.78
1.5
V
VGS = 0V, IS = 115mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Ciss
22
50
pF
VDS = 25V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
11
25
pF
Reverse Transfer Capacitance
Crss
2.0
5.0
pF
Gate Resistance
Rg

120
Ω
VDS = 0V, VGS = 0V,
f = 1.0MHz
Total Gate Charge (VGS = 4.5V)
Qg

223
pC
VDS = 10V, ID = 250mA
Gate-Source Charge
Qgs

82
Gate-Drain Charge
Qgd

178
SWITCHING CHARACTERISTICS (Note 8)
Turn-On Delay Time
tD(ON)
2.8
ns
VDD = 30V, ID = 0.2A,
RL = 150, VGEN = 10V,
RGEN = 25
Turn-On Rise Time
tR
3.0
Turn-Off Delay Time
tD(OFF)

7.6
Turn-Off Fall Time
tF

5.6
Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
2N7002
Document number: DS11303 Rev. 37 - 2
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2N7002
0
0.2
0.4
0.6
0.8
1.0
0 1 2 345
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 On-Region Characteristics
DS
I , DRAIN-SOURCE CURRENT (A)
D
0
1
2
3
4
5
0 0.2 I , DRAIN CURRENT (A)
Fig. 2 On-Resistance vs. Drain Current
D
6
7
0.4 0.6 0.8 1.0
R , NORMALIZED DRAIN-SOURCE
ON-RESISTANCE ( )
DS(ON)
1.0
1.5
2.0
2.5
3.0
-55 -30 -5 20 45 70 95 120 145
T, JUNCTION TEMPERATURE ( C)
Fig. 3 On-Resistance vs. Junction Temperature
j°
V = 10V,
I = 200mA
GS
D
R , STATIC DRAIN-SOURCE
ON-RESISTANCE ( )
DS(ON)
0
V , GATE TO SOURCE VOLTAGE (V)
Fig. 4 On-Resistance vs. Gate-Source Voltage
GS
I = 50mA
D
I = 500mA
D
1
2
3
4
5
6
0 2 4 6 8 10 12 14 16 18
R , NORMALIZED DRAIN-SOURCE
ON-RESISTANCE ( )
DS(ON)
0
2
1
4
3
0 0.2 0.4 0.6 0.8 1
V GATE SOURCE CURRENT (V)
GS,
I , DRAIN CURRENT (A)
Fig. 5 Typical Transfer Characteristics
D
6
5
8
7
10
9
0
50
100
150
200
250
300
350
025 50 75 100 125 150 175 200
P , POWER DISSIPATION (mW)
d
T , AMBIENT TEMPERATURE ( C)
Fig. 6 Max Power Dissipation vs. Ambient Temperature
A°
400
2N7002
Document number: DS11303 Rev. 37 - 2
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October 2019
© Diodes Incorporated
2N7002
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03
0.915
F
0.45
0.60
0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013
0.10
0.05
K
0.890
1.00
0.975
K1
0.903
1.10
1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085
0.150
0.110
a
0°
8°
--
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
Dimensions
Value (in mm)
C
2.0
X
0.8
X1
1.35
Y
0.9
Y1
2.9
J
K1 K
L1
GAUGE PLANE
0.25
H
L
M
All 7°
A
CB
D
G
F
a
X
Y
Y1 C
X1
2N7002
Document number: DS11303 Rev. 37 - 2
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© Diodes Incorporated
2N7002
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