Photomicrosensor (Transmissive) EE-SX1049 107
Photomicrosensor (Transmissive)
EE-SX1049
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•Compact with a slot width of 2 mm.
•PCB mounting type.
•High resolution with a 0.5-mm-wide aperture.
•RoHS Compliant
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■Ordering Information
■Electrical and Optical Characteristics (Ta = 25°C)
Internal Circuit
K
A
C
E
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Dimensions Tolerance
3 mm max.
±
0.3
3
<
mm
≤
6
±
0.375
6
<
mm
≤
10
±
0.45
10
<
mm
≤
18
±
0.55
18
<
mm
≤
30
±
0.65
Unless otherwise specified, the
tolerances are as shown below.
Cross section BBCross section AA
9
4
Four, C0.3
C0.3
6±0.2
2
AB
AB
1.5
1.5
9 min.
1.2
0.25 max.
2 max.
0.3 max.
KA
2.5
0.7±0.1
Four, 0.25
EC
2.5
2 max.
Four, 0.5
Two, 0.5
Optical
axis
Optical
axis
Optical
axis
Optical
axis
5.2
0
−0.2
1.2 dia.
0
−0.05
Item Symbol Rated value
Emitter Forward current IF50 mA (see note 1)
Pulse forward current IFP 1 A (see note 2)
Reverse voltage VR4 V
Detector Collector–Emitter
voltage
VCEO 30 V
Emitter–Collector
voltage
VECO ---
Collector current IC20 mA
Collector dissipation PC100 mW (see note
1)
Ambient
temperature
Operating Topr –25°C to 85°C
Storage Tstg –30°C to 100°C
Soldering temperature Tsol 260°C (see note 3)
Description Model
Photomicrosensor (transmissive) EE-SX1049
Item Symbol Value Condition
Emitter Forward voltage VF1.2 V typ., 1.5 V max. IF = 30 mA
Reverse current IR0.01 μA typ., 10 μA max. VR = 4 V
Peak emission wavelength λP940 nm typ. IF = 20 mA
Detector Light current IL0.5 mA min., 14 mA max. IF = 20 mA, VCE = 10 V
Dark current ID2 nA typ., 200 nA max. VCE = 10 V, 0 lx
Leakage current ILEAK --- ---
Collector–Emitter saturated voltage VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA
Peak spectral sensitivity wavelength λP850 nm typ. VCE = 10 V
Rising time tr 4 μs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling time tf 4 μs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
108 Photomicrosensor (Transmissive) EE-SX1049
■Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating
Forward Current vs. Forward
Voltage Characteristics (Typical)
Light Current vs. Forward Current
Characteristics (Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Distance d (mm)
Input
Output
Input
Output
90 %
10 %
Sensing Position Characteristics
(Typical)
Response Time Measurement
Circuit
Ambient temperature Ta (°C)
Collector dissipation PC (mW)
Forward voltage VF (V)
Forward current IF (mA)
Forward current IF (mA)
Forward current IF (mA)
Light current IL (mA)
Collector−Emitter voltage VCE (V)
Light current IL (mA)
Ambient temperature Ta (°C)
Load resistance RL (kΩ)
IF = 20 mA
VCE = 10 V
Ta = 25°C
Response time tr, tf (μs)
Relative light current IL (%)
Dark current ID (nA)
Relative light current IL (%)
Ambient temperature Ta (°C)
60
50
40
30
20
10
0
−40 −20 0 20 40 60 80 100
150
100
50
0
PC
IF
60
50
40
30
20
10
000.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
Ta = −30°C
Ta = 25°C
Ta = 70°C
0
10
8
6
4
2
010 20 30 40 50
Ta = 25°C
VCE = 10 V
012345678910
20
18
16
14
12
10
8
6
4
2
120
110
100
90
80
70
60
−40 −20 0 20 40 60 80 100
10,000
1,000
100
10
1
0.1
0.01
0.001
−30 −20 −10 010 20 30 40 50 60 70 80 90
IF = 40 mA
IF = 30 mA
IF = 20 mA
IF = 10 mA
Ta = 25°CIF = 50 mA IF = 20 mA
VCE = 10 V
VCE = 10 V
0 lx
10,000
0.01
tr
tf
0.1 10
1
1,000
100
10
1
VCC = 5 V
Ta = 25°C
100
80
60
40
20
0
−0.5 −0.25 0 0.25 0.5 0.75 1.0
d
120
(Center of optical axis)
t
t ft r
t
0
VCC
RL
0
IL
Relative Light Current vs. Ambi-
ent Temperature Characteristics
(Typical)
Response Time vs. Load Resist-
ance Characteristics (Typical)
Distance d (mm)
Sensing Position Characteristics
(Typical)
Relative light current IL (%)
100
80
60
40
20
0
−1.5−2.0 −1.0 −0.5 0 0.5 1.0 1.5 2.0
120
d
IF = 20 mA
VCE = 10 V
Ta = 25°C
(Center of optical axis)
Photomicrosensor (Transmissive) EE-SX1049
MEMO
Photomicrosensor (Transmissive) EE-SX1049
OMRON ON-LINE
Global - http://www.omron.com
USA - http://www.components.omron.com
Cat. No. X305-E-1 Printed in USA
OMRON ELECTRONIC
COMPONENTS LLC
55 E. Commerce Drive, Suite B
Schaumburg, IL 60173
847-882-2288
10/10 Specifications subject to change without notice
All sales are subject to Omron Electronic Components LLC standard terms and conditions of sale, which
can be found at http://www.components.omron.com/components/web/webfiles.nsf/sales_terms.html
ALL DIMENSIONS SHOWN ARE IN MILLIMETERS.
To convert millimeters into inches, multiply by 0.03937. To convert grams into ounces, multiply by 0.03527.
