CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures.
Copyright © Harris Corporation 1995 3-33
SEMICONDUCTOR
December 1995
Absolute Maximum Ratings TC = +25oCRFG45N06, RFP45N06
RF1S45N06, RF1S45N06SM UNITS
Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS 60 V
Drain Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR 60 V
Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 V
Drain Current
RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
45
Refer to Peak Current Curve A
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Refer to UIS Curve
Maximum Avalanche Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IAM 125 A
Power Dissipation
TC = +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate above +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
131
0.877 W
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ-55 to +175 oC
RFG45N06, RFP45N06,
RF1S45N06, RF1S45N06SM
45A, 60V, Avalanche Rated N-Channel
Enhancement-Mode Power MOSFETs
Packages
JEDEC STYLE TO-247
JEDEC TO-220AB
JEDEC TO-262AA
JEDEC TO-263AB
DRAIN
(BOTTOM
SIDE METAL)
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
A
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
A
A
M
DRAIN
(FLANGE)
GATE
SOURCE
Features
• 45A, 60V
•r
DS(ON) = 0.028Ω
•
Temperature Compensating
PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• +175oC Operating Temperature
Description
The RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM
N-Channel power MOSFETs are manufactured using the
MegaFET process. This process, which uses feature sizes
approaching those of LSI integrated circuits gives optimum
utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as switch-
ing regulators, switching converters, motor drivers, relay
drivers and emitter switches for bipolar transistors. These
transistors can be operated directly from integrated circuits.
Formerly developmental type TA49028.
Symbol
PACKAGE AVAILABILITY
PART NUMBER PACKAGE BRAND
RFG45N06 TO-247 RFG45N06
RFP45N06 TO-220AB RFP45N06
RF1S45N06 TO-262AA F1S45N06
RF1S45N06SM TO-263AB F1S45N06
NOTE: When ordering, use the entire part number. Add the suf fix, 9A,
to obtain the TO-263AB variant in tape and reel, i.e.RF1S45N06SM9A.
D
G
S
File Number 3574.2
3-34
Specifications RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM
Electrical Specifications TC = +25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain-Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 60 - - V
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA2-4V
Zero Gate Voltage Drain Current IDSS VDS = 60V,
VGS = 0V TC = +25oC--1µA
T
C
= +150oC- -50µA
Gate-Source Leakage Current IGSS VGS = ±20V - - 100 nA
On Resistance rDS(ON) ID = 45A, VGS = 10V - - 0.028 Ω
Turn-On Time tON VDD = 30V, ID = 45A
RL = 0.667Ω, VGS = +10V
RGS = 3.6Ω
- - 120 ns
Turn-On Delay Time tD(ON) -12- ns
Rise Time tR-74- ns
Turn-Off Delay Time tD(OFF) -37- ns
Fall Time tF-16- ns
Turn-Off Time tOFF - - 80 ns
Total Gate Charge QG(TOT) VGS = 0 to 20V VDD = 48V,
ID = 45A,
RL = 1.07Ω
- 125 150 nC
Gate Charge at 10V QG(10) VGS = 0 to 10V - 67 80 nC
Threshold Gate Charge QG(TH) VGS = 0 to 2V - 3.7 4.5 nC
Input Capacitance CISS VDS = 25V, VGS = 0V
f = 1MHz - 2050 - pF
Output Capacitance COSS - 600 - pF
Reverse Transfer Capacitance CRSS - 200 - pF
Thermal Resistance Junction to Case RθJC - - 1.14 oC/W
Thermal Resistance Junction to Ambient RθJA --80
o
C/W
Source-Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Forward Voltage VSD ISD = 45A - - 1.5 V
Reverse Recovery Time tRR ISD = 45A, dISD/dt = 100A/µs - - 125 ns
3-35
RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM
Typical Performance Curves
FIGURE 1. SAFE- OPERATING AREA CURVE FIGURE 2. NORMALIZED MAXIMUM TRANSIENT THERMAL
IMPEDANCE
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE FIGURE 4. PEAK CURRENT CAPABILITY
FIGURE 5. TYPICAL SATURATION CHARACTERISTICS FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS
400
100
10
11 10 100
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
TC = +25oC
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
1ms
100µs
10ms
100ms
DC
VDSS MAX = 60V
ID, DRAIN CURRENT (A)
10
1
0.1
0.01
10-5 10-4 10-3 10-2 10-1 100101
t, RECTANGULAR PULSE DURATION (s)
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
0.5
THERMAL RESPONSE
ZθJC, NORMALIZED
PDM
t1t2
50
40
30
20
10
025 50 75 100 125 150 175
ID, DRAIN CURRENT (A)
TC, CASE TEMPERATURE (oC) 10-3 10-2 10-1 100101102103104
102
103
t, PULSE WIDTH (ms)
VGS = 20V
VGS = 10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
FOR TEMPERATURES ABOVE +25oC
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
II
25
175 TC
–
150
------------------------
=
40
TC = +25oC
IDM, PEAK CURRENT CAPABILITY (A)
125
100
75
50
25
00.0 1.5 3.0 4.5 6.0 7.5
ID, DRAIN CURRENT (A)
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
VGS = 10V VGS = 8V
VGS = 7V
VGS = 6V
VGS = 5V
VGS = 4.5V
PULSE DURATION = 250µs, TC = +25oC
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
VGS, GATE-TO-SOURCE VOLTAGE (V)
ID(ON), ON STATE DRAIN CURRENT (A)
125
100
75
50
25
0
PULSE TEST
PULSE DURATION = 250µs
DUTY CYCLE = 0.5% MAX
+25oC
-55oC
VDD = 15V
+175oC
3-36
RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM
FIGURE 7. NORMALIZED rDS(ON) vs JUNCTION
TEMPERATURE FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
TEMPERATURE
FIGURE 9. NORMALIZED DRAIN SOURCE BREAKDOWN
VOLTAGE vs TEMPERATURE FIGURE 10. NORMALIZED POWER DISSIPATION vs
TEMPERATURE DERATING CURVE
FIGURE 11. TYPICAL CAPACITANCE vs VOLTAGE FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT. REFER TO
APPLICATION NOTE AN7254 AND AN7260
Typical Performance Curves
(Continued)
PULSE DURATION = 250µs, VGS = 10V, ID = 45A
2.5
2.0
1.5
1.0
0.5
0.0-80 -40 0 40 80 120 160 200
rDS(ON), NORMALIZED ON RESISTANCE
TJ,JUNCTION TEMPERATURE (oC)
VGS = VDS, ID = 250µA
2.0
1.5
1.0
0.5
0.0-80 -40 0 40 80 160120 200
THRESHOLD VOLTAGE
TJ,JUNCTION TEMPERATURE (oC)
VGS(TH), NORMALIZED GATE
ID = 250µA
2.0
1.5
1.0
0.5
0.0-80 -40 0 40 80 120 160 200
BVDSS, NORMALIZED DRAIN-TO-SOURCE
BREAKDOWN VOLTAGE
TJ,JUNCTION TEMPERATURE (oC)
1.2
1.0
0.8
0.6
0.4
0.2
0.0 0 25 50 75 100 125 150 175
POWER DISSIPATION MULTIPLIER
TC, CASE TEMPERATURE (oC)
VGS = 0V, f = 1MHz
CISS
COSS
CRSS
4000
3000
2000
1000
00 5 10 15 20 25
C, CAPACITANCE (pF)
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
60
45
30
15
0
10
7.5
5.0
2.5
0
VGS, GATE-SOURCE VOLTAGE (V)
20 IG(REF)
IG(ACT) 80 IG(REF)
IG(ACT)
t, TIME (µs)
VDD = BVDSS VDD = BVDSS
RL = 1.33Ω
IG(REF) = 1.5mA
VGS = 10V
0.75 BVDSS
0.50 BVDSS
0.25 BVDSS
0.75 BVDSS
0.50 BVDSS
0.25 BVDSS
VDS, DRAIN SOURCE VOLTAGE (V)
3-37
RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM
FIGURE 13. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
FIGURE 14. UNCLAMPED ENERGY WAVEFORMS FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 16. RESISTIVE SWITCHING WAVEFORMS FIGURE 17. RESISTIVE SWITCHING TEST CIRCUIT
Typical Performance Curves
(Continued)
STARTING TJ = +150oC
STARTING TJ = +25oC
300
100
10
10.01 0.1 1 10
tAV, TIME IN AVALANCHE (ms)
If R = 0
tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1]
IAS, AVALANCHE CURRENT (A)
VDD
VDS
BVDSS
tP
IAS
tAV
tP
VGS
0.01Ω
L
IL
+
-
VDS
VDD
RGDUT
VARY tP TO OBTAIN
REQUIRED PEAK IAS
0V
tD(ON)
tR
90%
10%
VDS 90%
10%
tF
tD(OFF)
tOFF
90%
50%50%
10% PULSE WIDTH
VGS
tON VDD
RL
VDS
DUT
RGS
0V
VGS
3-38
RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM
Temperature Compensated PSPICE Model for the
RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM
.SUBCKT RFP45N06213
REV 1/18/93
*NOM TEMP = +25oC
CA 12 8 3.49E-9
CB 15 14 3.8E-9
CIN 6 8 2E-9
DBODY 7 5 DBDMOD
DBREAK 5 11DBKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 66.5
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTO 20 6 18 8 1
IT 8 17 1
LDRAIN 2 5 1E-9
LGATE 1 9 5.65E-9
LSOURCE 3 7 4.13E-9
MOS1 16 6 8 8 MOSMOD M=0.99
MOS2 16 21 8 8 MOSMOD M=0.01
RBREAK 17 18 RBKMOD 1
RDRAIN 5 16 RDSMOD 3.58E-3
RGATE 9 20 0.681
RIN 6 8 1E9
RSOURCE 8 7 RDSMOD 13.6E-3
RVTO 18 19 RVTOMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 8 19 DC 1
VTO 21 6 0.92
.MODEL DBDMOD D (IS=8.2E-13 RS=7.86E-3 TRS1=2.26E-3 TRS2=2.90E-6 CJO=2.07E-9 TT=5.72E-8)
.MODEL DBKMOD D (RS=1.93E-1 TRS1=5.13E-4 TRS2=-2.15E-5)
.MODEL DPLCAPMOD D (CJO=1.25E-9 IS=1E-30 N=10)
.MODEL MOSMOD NMOS (VTO=3.862 KP=55.57 IS=1E-30 N=10 TOX=1 L=1U W=1U)
.MODEL RBKMOD RES (TC1=1.12E-3 TC2=-5.18E-7)
.MODEL RDSMOD RES (TC1=4.64E-3 TC2=1.58E-5)
.MODEL RVTOMOD RES (TC1=-4.27E-3 TC2=-6.55E-6)
.MODEL S1AMOD VSWITCH (RON=1E-5 ROFF=0.1 VON=-6.5 VOFF=-1.7)
.MODEL S1BMOD VSWITCH (RON=1E-5 ROFF=0.1 VON=-1.7 VOFF=-6.5)
.MODEL S2AMOD VSWITCH (RON=1E-5 ROFF=0.1 VON=-3.0 VOFF=2)
.MODEL S2BMOD VSWITCH (RON=1E-5 ROFF=0.1 VON=2.0 VOFF=-3.0)
.ENDS
NOTE: For further discussion of the PSPICE model consult A New PSPICE Sub-circuit for the Power MOSFET Featuring Global
Temperature Options; authors, William J. Hepp and C. Frank Wheatley.
10 DPLCAP RDRAIN DBREAK
LDRAIN
DRAIN
SOURCE
LSOURCE
DBODY
RBREAK
RVTO
VBAT
+
-
19IT
RSOURCE
EBREAK
MOS2
EDSEGS
RIN CIN
VTO
ESG
S1A S2A
S2BS1B
CBCA
EVTO
RGATE
GATE
LGATE
52
1817
7
11
21
8
6
16
209
1
12 15
14
13
13
814
13
+
-
+
-
+
-
+
-+
-
+
-
MOS1
3
6
85
8
18
8
6
8
17
18
