DATA SH EET
Product specification
Supersedes data of April 1996 1996 Sep 18
DISCRETE SEMICONDUCTORS
PMLL4150; PMLL4151;
PMLL4153
High-speed diodes
1/3 page (Datasheet)
M3D054
1996 Sep 18 2
Philips Semiconductors Product specification
High-speed diodes PMLL4150; PMLL4151; PMLL4153
FEATURES
•Small hermetically sealed glass
SMD package
•High switching speed: max. 4 ns
•General application
•Continuous reverse voltage:
max. 50 V
•Repetitive peak reverse voltage:
max. 75 V
•Repetitive peak forward current:
max. 600 mA and 450 mA
respectively.
APPLICATIONS
•High-speed switching
•The PMLL4150 is primarily
intended for general purpose use in
computer and industrial
applications.
•The PMLL4151 and PMLL4153 are
intended for military and industrial
applications.
DESCRIPTION
The PMLL4150, PMLL4151, PMLL4153 are high-speed switching diodes
fabricated in planar technology, and encapsulated in small hermetically sealed
glass SOD80C SMD packages.
Fig.1 Simplified outline (SOD80C) and symbol.
Cathode indicated by black band.
handbook, 4 columns
MAM061
ka
1996 Sep 18 3
Philips Semiconductors Product specification
High-speed diodes PMLL4150; PMLL4151; PMLL4153
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRRM repetitive peak reverse voltage
PMLL4151 −75 V
PMLL4153 −75 V
VRcontinuous reverse voltage −50 V
IFcontinuous forward current see Fig.2; note 1
PMLL4150 −300 mA
PMLL4151 −200 mA
PMLL4153 −200 mA
IFRM repetitive peak forward current
PMLL4150 −600 mA
PMLL4151 −450 mA
PMLL4153 −450 mA
IFSM non-repetitive peak forward current square wave; Tj=25°C prior to
surge; see Fig.4
t=1µs−4A
t=1ms −1A
t=1s −0.5 A
Ptot total power dissipation Tamb =25°C; note 1 −500 mW
Tstg storage temperature −65 +200 °C
Tjjunction temperature −200 °C
1996 Sep 18 4
Philips Semiconductors Product specification
High-speed diodes PMLL4150; PMLL4151; PMLL4153
ELECTRICAL CHARACTERISTICS
Tj=25°C; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VFforward voltage see Fig.3
PMLL4150 IF= 1 mA 540 620 mV
IF= 10 mA 660 740 mV
IF= 50 mA 760 860 mV
IF= 100 mA 820 920 mV
IF= 200 mA 870 1000 mV
PMLL4151 IF=50mA −1000 mV
PMLL4153 IF= 0.1 mA 490 550 mV
IF= 0.25 mA 530 590 mV
IF= 1 mA 590 670 mV
IF= 2 mA 620 700 mV
IF= 10 mA 700 810 mV
IF= 50 mA 740 880 mV
IRreverse current VR= 50 V; see Fig.5
PMLL4150 −0.1 µA
PMLL4151 −0.05 µA
PMLL4153 −0.05 µA
IRreverse current VR= 50 V; Tj= 150 °C; see Fig.5
PMLL4150 −100 µA
PMLL4151 −50 µA
PMLL4153 −50 µA
Cddiode capacitance f = 1 MHz; VR= 0; see Fig.6
PMLL4150 −2.5 pF
PMLL4151 −2pF
PMLL4153 2pF
1996 Sep 18 5
Philips Semiconductors Product specification
High-speed diodes PMLL4150; PMLL4151; PMLL4153
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
trr reverse recovery time when switched from IF= 10 mA to
IR= 1 mA; RL= 100 Ω; measured at
IR= 0.1 mA; see Fig.7
PMLL4150 −6ns
when switched from IF= 10 mA to
200 mA to IR= 10 mA to 200 mA;
RL= 100 Ω; measured at IR= 0.1 ×IF;
see Fig.7
−4ns
when switched from IF= 200 mA to
400 mA to IR= 200 mA to 400 mA;
RL= 100 Ω; measured at IR= 0.1 ×IF;
see Fig.7
−6ns
t
rr reverse recovery time when switched from IF= 10 mA to
IR= 10 mA; RL= 100 Ω; measured at
IR= 1 mA; see Fig.7
PMLL4151 −4ns
when switched from IF= 10 mA to
IR= 60 mA; RL= 100 Ω; measured at
IR= 1 mA; see Fig.7
−2ns
t
rr reverse recovery time when switched from IF= 10 mA to
IR= 10 mA; RL= 100 Ω; measured at
IR= 1 mA; see Fig.7
PMLL4153 −4ns
when switched from IF= 10 mA to
IR= 60 mA; RL= 100 Ω; measured at
IR= 1 mA; see Fig.7
−2ns
t
fr forward recovery time when switched to IF= 200 mA; tr= 0.4 ns;
measured at VF= 1 V; see Fig.8 −10 ns
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-tp thermal resistance from junction to tie-point 300 K/W
Rth j-a thermal resistance from junction to ambient note 1 350 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
1996 Sep 18 6
Philips Semiconductors Product specification
High-speed diodes PMLL4150; PMLL4151; PMLL4153
GRAPHICAL DATA
Device mounted on an FR4 printed-circuit board.
(1) PMLL4150.
(2) PMLL4151; PMLL4153.
Fig.0 Maximum permissible continuous forward
current as a function of ambient
temperature.
handbook, halfpage
0 100 200
400
300
200
0
100
MBG456
Tamb (oC)
IF
(mA)
(1)
(2)
Fig.3 Forward current as a function of forward
voltage.
handbook, halfpage
012
600
0
200
400
MBG464
VF (V)
IF
(mA)
(1) (2) (3)
(1) Tj= 175 °C; typical values.
(2) Tj=25°C; typical values.
(3) Tj=25°C; maximum values.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
Based on square wave currents.
Tj=25°C prior to surge.
handbook, full pagewidth
MBG704
10 tp (µs)
1
IFSM
(A)
102
10−1104
102103
10
1
1996 Sep 18 7
Philips Semiconductors Product specification
High-speed diodes PMLL4150; PMLL4151; PMLL4153
Fig.5 Reverse current as a function of junction
temperature.
handbook, halfpage
0 100 Tj (oC) 200
103
102
10−1
10−2
10 (1) (2)
1
IR
(µA)
MGD006
(3)
(1) VR= 75 V; maximum values.
(2) VR= 75 V; typical values.
(3) VR= 20 V; typical values.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tj=25°C.
handbook, halfpage
01020
1.2
1.0
0.6
0.4
0.8
MGD004
VR (V)
Cd
(pF)
1996 Sep 18 8
Philips Semiconductors Product specification
High-speed diodes PMLL4150; PMLL4151; PMLL4153
Fig.7 Reverse recovery voltage test circuit and waveforms.
handbook, full pagewidth
trr
(1)
IFt
output signal
trt
tp
10%
90%
VR
input signal
V = V I x R
RF S
R = 50
SΩIF
D.U.T.
R = 50
iΩ
SAMPLING
OSCILLOSCOPE
MGA881
(1) The value of IR is dependent on product type.
Fig.8 Forward recovery time test circuit and waveforms.
Input signal: forward pulse rise time tr= 0.4 ns; forward pulse duration tp= 100 ns; duty factor δ= 0.01.
trt
tp
10%
90%
I
input
signal
R = 50
SΩ
I
R = 50
iΩ
OSCILLOSCOPE
Ω1 k Ω450
D.U.T.
MBH181
Vfr
tfr t
output
signal
VF
(V)
1.0
1996 Sep 18 9
Philips Semiconductors Product specification
High-speed diodes PMLL4150; PMLL4151; PMLL4153
PACKAGE OUTLINE
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Fig.9 SOD80C.
Dimensions in mm.
handbook, full pagewidth
MBA390 - 2
1.60
1.45
3.7
3.3
0.3 0.3
O
