PRODUCT CATALOG _ , | _olitron N-CHANNEL JUNCTION FET Devices. Inc. CHIP NUMBER O CONTACT METALLIZATION a Top Contact: > 12,000 A Aluminum 013" (0.737mm) Backside Contact: 3,000 A Gold yi) | ASSEMBLY RECOMMENDATIONS 012" (0.305mm) It is advisable that: Die Size: 2213 (mig a) the die be eutectically mounted with gold silicon preform 98/2%. 0.308 x .0330(mm) 3x3 (mils) b) 1 mil (0.0254mm) aluminum wire be ultrasonically attached to the top contact. Pad Size: 0.076 x 0.076(mm) . GATE:SUBSTRATE TYPICAL ELECTRICAL CHARACTERISTICS PARAMETER | MIN. | TYP | MAX. | UNIT TEST CONDITIONS Byass -25 35 -50 Vv Vps = OV, Iq = pA Ipss 10 10 30 mA Vps = 15V, Vag = 0 Sts 3.0 5.5 7.5 mmho Vps = 15V, Vgs, = 0 Iass -5.0 -100 pA Vag =-20V, Vps = 0 rDS 100 170 500 Q Vps = 100mV, Vag = 0 VGS(off) -0.8 -3.0 8.0 v Vps = I5V, Ip = nA Crss 0.6 0.7 0.9 pF Vps = 18V, Vag = 0, f = 1MHz Ciss 3.0 3.5 4.0 pF Vps = 15V, Vag = 0, f = IMHz n 15 nV/ Hz VpG = 15V, Ip = 5,4, = 100Hz TYPICAL DEVICE TYPES: 2N4116, 2N3823, 2N3452, 2N5104, 2N5105, UC734, 2N5485 E-30Zalitron (loss mA) {ip ma) Devices, inc. CHIP TYPE FN2.5 TRANSFER ADMITTANCE VS. - GATE-SOURCE CUTOFF VOLTAGE : 3 4 7 GATE-SOURCE CUTOFF VOLTAGE (Vggi(off) VOLTS OUTPUT CHARACTERISTICS 10 Vag =-2.0V 00 2 4 6 8 10 12 14 16 18 20 22 24 26 DRAIN-SOQURCE VOLTAGE (Vpg) VOLTS 8000 7000. 6000 4000 2000 1000 Yig xmho ip (en) (Yes mS __ PRODUCT CATALOG N-CHANNEL JUNCTION FET TRANSFER CHARACTERISTICS 14 0 4 2.33) 5 6 GATE-SOURCE VOLTAGE (VGS) VOLTS NORMALIZED FORWARD TRANSFER ADMITTANCE VS TEMPERATURE 60 -20 0 +20 +60 +100 TEMPERATURE C +140 E-3]