P0130AA
4/5
Fig. 4: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
Fi g. 5:Relativ e variation of holding current vers us
gate-cathode resistance (typi cal values).
Fig. 6: Relative variation of dV/dt immunity
versus gate-cathode res istance (typical values). Fig. 7: Relative variation of dV/dt immunity
versus gate-cathode capacitance (typical v alues).
Fig. 8: Surge peak on-state current versus
num ber of cycle s. Fig. 9: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10 m s, and corresponding val ue of I²t.
IGT, IH, IL[Tj] / IGT, IH, IL[T] = 25°C
6
5
4
3
2
1
00-20-40 20 40 60 80 100 120 140
Tj(°C)
IH[Rgk]/IH[Rgk=1k ]Ω
Rgk(kΩ)
0.4 0.6 0.8 1.00.2 1.6 1.8 2.01.2 1.4
dV/dt[Rgk] / dV/dt[Rgk=1k ]Ω
Rgk(kΩ)
0
0.1
1.0
10.0 dV/dt[Cgk] / dV/dt[Rgk=1k ]Ω
21
03
4
5
6
7
0
2
4
6
8
10
Cgk(nF)
1 10 100 1000
0
1
2
3
4
5
6
7
8ITSM(A)
Non repetitive
Tj initial=25°C
Tamb=25°C
Repetitive
Numberofcycles
Onecycle
tp=10ms
ITSM(A), I t(A s)
22
100.0
10.0
1.0
0.1
0.01 0.10 1.00 10.00
tp(ms)