Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 8.0
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 5.6 A
IDM Pulsed Drain Current 32
PD @TC = 25°C Power Dissipation 88 W
PD @TA = 25°C Power Dissipation3.8
Linear Derating Factor 0.59 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy110 mJ
IAR Avalanche Current4.8 A
EAR Repetitive Avalanche Energy8.8 mJ
dv/dt Peak Diode Recovery dv/dt 7.3 V/ns
TJOperating Junction and -55 to +175
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C
Mounting torque, 6-32 or M3 srew10 lbf•in (1.1N•m)
HEXFET® Power MOSFET
05/28/04
Absolute Maximum Ratings
Description
VDSS = 250V
RDS(on) = 0.435 Ω
ID = 8.0A
S
D
G
lAdvanced Process Technology
lDynamic dv/dt Rating
l175°C Operating Temperature
lFast Switching
lFully Avalanche Rated
lEase of Paralleling
lSimple Drive Requirements
lLead-Free
D2Pak
IRF634NS
TO-220AB
IRF634N TO-262
IRF634NL
IRF634NPbF
IRF634NSPbF
IRF634NLPbF
Fifth Generation HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-
industrial applications at power dissipation levels to
approximately 50 watts. The low thermal resistance and low
package cost of the TO-220 contribute to its wide acceptance
throughout the industry.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in any
existing surface mount package. The D2Pak is suitable for high
current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface
mount application.
The through-hole version (IRF634NL) is available for low-
profile application.
www.irf.com 1
PD - 95342
IRF634N/S/LPbF
2www.irf.com
S
D
G
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode)––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 4.8A, VGS = 0V
trr Reverse Recovery Time ––– 130 200 ns TJ = 25°C, IF = 4.8A
Qrr Reverse Recovery Charge ––– 650 980 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
8.0
32
A
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 250 ––– – –– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.33 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.435 ΩVGS = 10V, ID = 4.8A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 5.4 ––– ––– S VDS = 50V, ID = 4.8A
––– ––– 25 µA VDS = 250V, VGS = 0V
––– ––– 250 VDS = 200V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V
QgTotal Gate Charge ––– – – – 34 ID = 4.8A
Qgs Gate-to-Source Charge ––– ––– 6. 5 nC VDS = 200V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 16 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 8.4 ––– VDD = 125V
trRise Time ––– 16 ––– ID = 4.8A
td(off) Turn-Off Delay Time ––– 28 –– – RG = 1.3Ω
tfFall Time ––– 15 ––– VGS = 10V, See Fig. 10
Between lead,
––– ––– 6mm (0.25in.)
from package
and center of die contact
Ciss Input Capacitance ––– 620 ––– VGS = 0V
Coss Output Capacitance ––– 84 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 23 ––– pF ƒ = 1.0MHz, See Fig. 5
nH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
LDInternal Drain Inductance
LSInternal Source Inductance ––– –––
S
D
G
IGSS
ns
4.5
7.5
IDSS Drain-to-Source Leakage Current
Thermal Resistance Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 1.7
RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
RθJA Junction-to-Ambient––– 62
RθJA Junction-to-Ambient (PCB mount)––– 40
IRF634N/S/LPbF
www.irf.com 3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.01
0.1
1
10
100
0.1 1 10 100
20µs PU LSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Vol tage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
0.1
1
10
100
0.1 1 10 100
20µs PULSE WIDTH
T = 175 C
J°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
0.1
1
10
100
4.0 5.0 6.0 7.0 8.0 9.0
V = 50 V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 175 C
J°
-60 -40 -20 020 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
T , Junction Te mperature ( C)
R , Drain-to-Source On R esistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
7.9A
IRF634N/S/LPbF
4www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
0.2 0.4 0.6 0.8 1.0 1.2
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 175 C
J°
110 100 1000
VDS, Drain-to-Source Vol tage (V)
0
200
400
600
800
1000
1200
C, Capacitance(pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = C
gs + Cgd, C
ds SHORTED
Crss
= C
gd
Coss
= C
ds + Cgd
010 20 30 40
0
4
8
12
16
20
Q , Total Gate C harge (nC)
V , Gate-to-Source V o ltag e (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
4.8A
V = 50V
DS
V = 125V
DS
V = 200V
DS
1 10 100 1000
VDS , Dr ain-toS ource Voltage (V)
0.1
1
10
100
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
IRF634N/S/LPbF
www.irf.com 5
Fig 10a. Switching Time Test Circuit
V
DS
9
0%
1
0%
V
GS t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-
VDD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.
1
Notes:
1. D u ty fa c to r D = t / t
2. Peak T =P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal R esponse (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25 50 75 100 125 150 175
0.0
2.0
4.0
6.0
8.0
10.0
T , C a se Temperature ( C )
I , Drain Current (A)
°
C
D
IRF634N/S/LPbF
6www.irf.com
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T. V
D
S
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
AS
25 50 75 100 125 150 175
0
40
80
120
160
200
Starti ng T , Junct ion Tem pe r ature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
2.0A
3.4A
4.8A
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
VGS
IRF634N/S/LPbF
www.irf.com 7
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
R
e-Applied
V
oltage
Reverse
Recovery
Current Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P.W.
Period
+
-
+
+
+
-
-
-
Fig 14. For N-Channel HEXFET® Power MOSFETs
* VGS = 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
RG
VDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
*
IRF634N/S/LPbF
8www.irf.com
LEA D AS SIGNMEN T S
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
- B -
1.32 (.052)
1.22 (.048)
3X 0 .55 (.022)
0 .46 (.018)
2.92 (.115)
2.64 (.104)
4.69 (.185)
4.20 (.165)
3X 0.93 (.037)
0.69 (.027)
4.06 (.160)
3.55 (.140)
1.15 (.045)
MIN
6.47 (.255)
6.10 (.240)
3.78 (.149)
3.54 (.139)
- A -
10.54 (.415)
10.29 (.405)
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
3X 1.40 (.055)
1.15 (.045)
2 . 54 (.100)
2X
0.36 (.014) M B A M
4
1 2 3
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLIN E CONFORMS TO JEDEC OUTLINE TO-220AB.
2 CONTRO LL I NG DI M ENSION : I NCH 4 HEATSI NK & LEAD MEASUREMENTS DO NOT INCLUDE BURR S.
HEXFET
1- GATE
2- DRAIN
3- SOURCE
4- DRAIN
LEAD ASSIGNMENTS
IGBTs, CoPAC
K
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
EXAMPLE:
IN THE ASSEMBLY LINE "C"
THIS IS AN IRF1010
LOT CODE 17 89
ASSEMBLED ON WW 19, 1997 PAR T NUMBE
R
ASSEMBLY
LOT CODE
DATE CODE
YEAR 7 = 19 97
LINE C
WEEK 19
LOGO
RECTIFIER
INTERNATIONAL
Note: "P" in asse m bl y line
position indica tes "Le ad -F ree "
IRF634N/S/LPbF
www.irf.com 9
D2Pak Part Marking Information
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
Note: "P" in assembl y line
position in dicates "Lead-Free"
F530S
THIS IS AN IRF530S WITH
LOT CODE 8024
ASSEMBLED ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
AS S E MB LY
LOT CODE
INTERNATIONAL
RECTIFIER
LOGO
PART NUMBE
R
DATE COD E
YEAR 0 = 2000
WEE K 02
LINE L
OR
F530S
A = ASSEMBLY SIT E CODE
WEEK 02
P = DE SIGNATE S L EAD-F R EE
PRODUCT (OPTION AL)
RECTIFIER
INTERNATIONAL
LOGO
LOT COD E
ASSEMBLY YEAR 0 = 2000
DATE CODE
PART NUMBER
IRF634N/S/LPbF
10 www.irf.com
TO-262 Part Marking Information
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
ASSEMBLY
LOT CODE
RECTIFIER
INTERNATIONAL
A SSEMBLED ON WW 19, 1997
Not e: "P" in assembly lin e
p o s ition indicates "Lead-F ree"
IN THE ASS EMB LY LINE "C" LOGO
TH IS IS AN IRL3103L
LOT CODE 1789
EXAMPLE:
LINE C
DATE CODE
WEEK 19
YEAR 7 = 1997
PART NUMBER
PART NUMBER
LOGO
LOT CODE
AS S E MB L Y
INTERNATIONAL
RECTIFIER
PRODUCT (OPTIONAL)
P = DESIGNATES LEAD- FREE
A = AS S E MB L Y S IT E CODE
WEEK 19
YEAR 7 = 1997
DATE CODE
OR
IRF634N/S/LPbF
www.irf.com 11
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Starting TJ = 25°C, L = 9.5mH
RG = 25Ω, IAS = 4.8A,VGS=10V
Pulse width ≤ 400µs; duty cycle ≤ 2%.
This is only applied to TO-220A package
This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 05/04
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] (IRF634N),
Industrial (IRF634NS and IRF634NL) market.
Qualification Standards can be found on IR’s Web site.
D2Pak Tape & Reel Infor-
3
4
4
TRR
F
EED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
F
EED DIRECTION
10.90 (.429)
10.70 (.421) 16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957
)
23.90 (.941
)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362
)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.