2N5884 (PNP) & 2N5886 (NPN)
Silicon Power Transistor
High Power Audio Amplifier
TO−3 Type Package
Description:
The 2N5884 (PNP) and 2N5886 (NPN) are silicon complementary transistors designed for use in general
purpose power amplifier and switching applications.
Features:
DLow Collector−Emitter Saturation Voltage: VCE(sat) = 1V (Max) at IC = 15A
DExcellent DC Current Gain: hFE = 20 − 100 @ IC = 10A
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO 80V......................................................
Collector−Base Voltage, VCBO 80V.......................................................
Emitter−Base Voltage, VEBO 5V..........................................................
Collector Current, IC
Continuous 25A..................................................................
Peak 50A.......................................................................
Base Current, IB7.5A..................................................................
Total Device Dissipation (TC = +25C), PD200W...........................................
Derate Above 25C 1.15W/C......................................................
Operating Junction Temperature Range, TJ−65 to +200C..................................
Storage Temperature Range, Tstg −65 to +200C..........................................
Thermal Resistance, Junction−to−Case, RthJC 0.875C/W...................................
Electrical Characteristics: (TC =+25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector−Emitter Sustaining Voltage VCEO(sus) IC = 200mA, IB = 0, Note 1 80 − − V
Collector Cutoff Current ICEO VCE = 40V, IB = 0 − − 2.0 mA
ICBO VCB = 80V, IE = 0 − − 1.0 mA
ICBX VCE = 100V, VBE(off) = 1.5V − − 1.0 mA
VCE = 100V, VBE(off) = 1.5V, TC = +150C− − 10 mA
Emitter Cutoff Current IEBO VEB = 5V, IC = 0 − − 1.0 mA
Note 1. Pulse Test: Pulse Width 300s. Duty Cycle 2%.