ABSOLUTE MAXIMUM RATINGS
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (DC)
Symbol
VCEO
VCBO
VEBO
IC(DC)
PNP/WTP772
30
NPN/WTP882 Unit
Vdc
Vdc
Vdc
Adc
Rating
Characteristics Symbol Min Max Unit
ELECTRICAL CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC= -10/ 10 mAdc, IB=0)
Collector-Base Breakdown Voltage (IC= -100/ 100 µAdc, IE=0)
Emitter-Base Breakdown Voltage (IE= -100/ 100 µAdc, IC=0)
Collector Cutoff Current (VCE= -30/ 30 Vdc, I =0)
Collector Cutoff Current (VCB = -40/ 40 Vdc, IE=0)
Emitter Cutoff Current (VEB= -6.0/ 6.0V c, I =0)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICE0
ICBO
IEBO
-5.0/ 5.0
-
-
-
-
-
-
-1.0/ 1.0
Vdc
Vdc
Vdc
uAdc
uAdc
uAdc
WTP772
WTP882
TO-251
Tstg
PD
C
C
WEITRON
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PNP/NPN Epitaxial Planar Transistors
(Ta=25ºC)
-40
-5.0
-3.0
40
5.0
3.0
-30
Collector Current (Pulse)1I(Pulse)
I(Pulse)
-7.0 7.0 Adc
Adc
Base Current -0.6 0.6
Total Device Dissipation Tc=25 C
TA=25°C
10
1.4 W
Junction Temperature Tj150
Storage, Temperature -55 to +150
Device Marking
WT P 7 7 2 =B 7 7 2 , WT P 8 8 2 =D8 8 2
-30/ 30
-40/ 40
-1.0/ 1.0
-1.0/ 1.0
d
NOT E : 1 . P W 35 0us, duty cycle 2%
1 2 3
1.BASE
2.COLLECTOR
3.EMITTER
C
B
B
C
Lead(Pb)-Free
P b
Current-Gain-Bandwidth Product
(IC= -0.1/0.1 mAdc, VCE=-5.0/5.0 Vdc, f=10MHz)
fT
MHz
Collector-Emitter Saturation Voltage
(IC= -2.0/2.0 Adc, IB= -0.2/0.2mAdc)
Base-Emitter Saturation Voltage
(IC= -2.0/2.0 Adc, IB= -0.2/0.2mAdc)
hFE
hFE
VCE(sat)
VBE(sat)
Vdc
Vdc
ON CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Characteristics Symbol UnitMin Max
-
-
--
-
-
-
-
-
-
WTP772
WTP882
WEITRON
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(IC= -1.0/1.0 Adc, VCE=-2.0/2.0Vdc)
DC Current Gain
DC Current Gain
(IC= -100/100 mAdc, VCE= -2.0/2.0 Vdc)
60 400
(1)
(2)
32
-0.5/0.5
-2.0/2.0
80/90
Classification of hFE(1)
Rank ROYGR
Range 60-120 100-200 160-320 200-400
TYP
-
WEITRON
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WTP772
WTP882
150100500
F1. Total Power Dissipation VS.
Ambient Temperature
2
4
6
8
10
°
Ta-Amient Temperature- C
PT-Total Power Dissipation-W
NOTE
1. Aluminum heat sink
of 1.0 mm thickness.
2. With no insulator film.
3. With silicon compound.
infinite heat sink
100 cm
25 cm
9 cm
Without heat sink
2
2
2
F3. Thermal Resistance VS.
0.1 0.3 1 3 10 30 100 300 1000
Pulse Width
0.3
1
3
10
30
PW-Pulse Width-ms
4Rth-Thermal Resistance- C/W
V
CE
=10V
I =1.0A
C
Duty=0.001
°
-Ic,Collector Current(A)
F4. Safe Operating Areas
Ic(max),DC
Ic(max),Pulse
10mS
1mS
0.1mS
V -Collector to Emitter Voltage-V
CE
1 3 6 10 30 60 100
0.01
0.03
0.1
0.3
1
3
10
NOTE
1. Tc=25 C
2. Curves must be derated
linearly with increase of
temperature and Duty Cycle.
(Single nonrepetitive pulse)
Dissipation
Limited
s/b Limited
V MAX
CEO
PW=100 us
PW<
- <
-
10 ms
Duty Cycle 50 %
( )
F5. Collector Current VS. Collector
-Collector-Emitter Voltage(V)
-Ic,Collector Current(A)
IB=-1mA
IB=-2mA
IB=-3mA
IB=-4mA
IB=-5mA
IB=-6mA
IB=-7mA
IB=-8MA
IB=-9mA
IB=-10mA
v
CE
To Emitter Voltage
-4 -8 -12 -16 -20
0
-2.0
-1.6
-1.2
-0.8
-0.4
0
Pulse Test
WTP772
F6. Collector Current VS. Collector
-Collector-Emitter Voltage(V)
-Ic,Collector Current(A)
IB=1mA
IB=2mA
IB=3mA
IB=4mA
IB=5mA
IB=6mA
IB=7mA
IB=8MA
IB=9mA
IB=10mA
v
CE
To Emitter Voltage
4 8 12 16 20
0
2.0
1.6
1.2
0.8
0.4
0
Pulse Test
WTP882
Tc,Case Temperature(°C)
F.2 Derating Curve for All Types
150
100
050
0
100
S
/b
limited
Dissipation
limited
20
40
60
80
Percentage of Rated Current-%dT-
WEITRON
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WTP772
WTP882
F7.
Ic-Collector Current(A)
0.001 0.003 0.01 0.03 0.1 0.3 1 3 10
1
3
6
10
30
60
100
300
600
1000
h ,
FE
h ,
FE
V -I
BE
c
-DC Current Gain
V
CE
=2.0V
Puse Test
WTP772
WTP772
WTP882
WTP882
V
BE
h
FE
Ic-Collector Current(A)
F8.
V
CE
(sat)
V
BE
(sat)
0.003 0.01
0.01
0.03
0.03
0.1
0.1
0.3
0.3
1
1
3
3
10
10
0.001
0.003
0.006
0.06
0.6
6
V , V ,
CE(sat)
V -Collector Saturation Voltage(V)
CE(sat)
BE(sat)
V -Base Saturation Voltage(V)
BE(sat)
-Ic
WTP772
WTP882
Ic-Collector Current(A)
F9. f - I
T
c
0.01 0.03 0.1 0.3 1
1
3
10
30
100
300
1000
f -Gain Bandwidth Product(MHZ)
T
WTP882
WTP772
V =5.0V
CE
Forecd air
Cooling
(with heat sink)
F10.
1 3 6 10 30 60
3
6
10
30
C -V , C -V
ob ib
CB CE
60
100
300
V -Collector to Base Voltage(V)
V -Emitter to Base Voltage(V)
CB
EB
Cib-Input Capacitance(P )
Cob-Output Capacitance(P )
F
F
f=1.0MHz
I =0(Cob)
I =0(Cib)
E
C
WTP882
WTP772
WTP772
Cob
Cib
WTP882
WTP772
WTP882
WEITRON
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Dim
A
B
C
D
E
G
H
J
K
L
M
Min
6.40
6.80
0.50
-
2.20
0.45
1.00
5.40
0.45
0.90
6.50
Max
6.80
7.20
0.80
2.30
2.50
0.55
1.60
5.80
0.69
1.50
TO-251
A
B
C
D
E
G
H
L
J
K
1 2 3
4
-
N-0.90
TO-251 Outline Dimensions unit:mm
1. Emitter
2. Base
3. Collector
WTP772
WTP882
M
N
