1998©
Document No. D16199EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
SILICON TRANSISTORS
2SD1616, 2SD1616A
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
FEATURES
• Low VCE(sat):
VCE(sat) = 0.15 V TYP. (IC = 1.0 A, IB = 50 mA)
• Large PT in small dimension with versatility
PT = 0.75 W, VCEO = 50/60 V, IC(DC) = 1.0 A
• Complementary transistor with the 2SB1116 and 1116A
ABSOLUTE MAXIMUM RATINGS (Ta = 25°
°°
°C)
Ratings
Parameter Symbol 2SD1616 2SD1616A Unit
Collector to base voltage VCBO 60 120 V
Collector to emitter voltage VCEO 50 60 V
Emitter to base voltage VEBO 6.0 V
Collector current (DC) IC(DC) 1.0 A
Collector current (pulse) IC(Pulse)*2.0 A
Total power dissipation PT0.75 W
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
*PW ≤ 10 ms, duty cycle ≤ 50%
PACKAGE DRAWING (UNIT: mm)
ELECTRICAL CHARACTERISTICS (Ta = 25°
°°
°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Collector cutoff current ICBO VCB = 60 V, IE = 0 100 nA
Emitter cutoff current IEBO VEB = 6.0 V, IC = 0 100 nA
DC current gain hFE1** VCE = 2.0 V, IC = 100 mA 135 600/400 −
DC current gain hFE2** VCE = 2.0 V, IC = 1.0 A 81 −
DC base voltage VBE** VCE = 2.0 V, IC = 50 mA 600 640 700 mV
Collector saturation voltage VCE(sat)** IC = 1.0 A, IB = 50 mA 0.15 0.3 V
Base saturation voltage VBE(sat)** IC = 1.0 A, IB = 50 mA 0.9 1.2 V
Output capacitance Cob VCB = 10 V, IE = 0, f = 1.0 MHz 19 pF
Gain bandwidth product fTVCE = 2.0 V, IC = 100 mA 100 160 MHz
Turn-on time ton 0.07
µ
s
Storage time tstg 0.95
µ
s
Fall time tf
VCC = 10 V, IC = 100 mA
IB1 = −IB2 = 10 mA
VBE(off) = −2 to –3 V 0.07
µ
s
** Pulse test PW ≤ 350
µ
s, duty cycle ≤ 2% per pulsed
hFE1/hFE CLASSIFICATION L : 135 to 270 K : 200 to 400 U : 300 to 600 (U rank is not available for the 2SD1616A.)
Data Sheet D16199EJ1V0DS
2
2SD1616, 1616A
TYPICAL CHARACTERISTICS (Ta = 25°
°°
°C)
Data Sheet D16199EJ1V0DS 3
2SD1616, 1616A
2SD1616, 1616A
M8E 00. 4
The information in this document is current as of July, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
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