Rev. B
CZ
MMBT3906
SMD General Purpose Transistor (PNP)
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of 9
Electrical Characteristics (T
Ambient
=25ºC unless noted otherwise)
Off Characteristics
Symbol Description Min. Max. Unit Conditions
V(BR)CEO Collector-Emitter Breakdown Voltage
(Pulse width ≤300µs, Duty Cycle ≤2.0%) -40 - V IC=-1mA, IB=0
V(BR)CBO Collector-Base Breakdown Voltage -40 - V IC=-10µA, IE=0
V(BR)EBO Emitter-Base Breakdo wn Voltage -5.0 - V IE=-10µA, IC=0
IBL Base Cut-off Current - -50 nA VEB=-3V, VCE=-30V
ICEX Collector Cut-off Current - -50 nA VEB=-3V, VCE=-30V
On Characteristics
Symbol Description Min. Max. Unit Conditions
60 - VCE=-1V, IC=-0.1mA
80 - VCE=-1V, IC=-1mA
100 300 VCE=-1V, IC=-10mA
60 - VCE=-1V, IC=-50mA
hFE D.C. Current Gain
30 -
VCE=-1V, IC=-100mA
- -0.25 IC=-10mA, IB=-1mA
VCE(sat) Collector-Emitter Saturation Voltage - -0.4 V IC=-50mA, IB=-5mA
-0.65 -0.85 IC=-10mA, IB=-1mA
VBE(sat) Base-Emitter Saturation Voltage - -0.95 V IC=-50mA, IB=-5mA
Small-signal Characteristics
Symbol Description Min. Max. Unit Conditions
fT Current Gain-Bandwidth Product 250 - MHz VCE=-20V, IC=-10mA,
f=100MHz
COBO Output Capacitance - 4.5 pF VCB=-5V, f=1.0MHz,
IE=0
CIBO Input Capacitance - 10 pF
VEB=-0.5V, f=1.0MHz,
IC=0
hie Input Impedance 2.0 12 kohms VCE=-10V, IC=-1mA,
f=1kHz
hre Voltage Feedback Ratio 0.1 10 x 10-4 VCE=-10V, IC=-1mA,
f=1kHz
hfe Small-Signal Current Gain 100 400 - VCE=10V, IC=-1mA,
f=1kHz
hoe Output Admittance 3.0 60 UMHOS VCE=-10V, IC=-1mA,
f=1kHz
NF Noise Figure - 4.0 dB VCE=-5V, IC=-100µA,
Rs=1.0kohms, f=1kHz