FSBB30CH60CT Motion SPM(R) 3 Series Features General Description * UL Certified No. E209204 (UL1557) FSBB30CH60CT is an advanced Motion SPM(R) 3 module providing a fully-featured, high-performance inverter output stage for AC Induction, BLDC, and PMSM motors. These modules integrate optimized gate drive of the built-in IGBTs to minimize EMI and losses, while also providing multiple on-module protection features including under-voltage lockouts, over-current shutdown, and fault reporting. The built-in, high-speed HVIC requires only a single supply voltage and translates the incoming logic-level gate inputs to the high-voltage, high-current drive signals required to properly drive the module's internal IGBTs. Separate negative IGBT terminals are available for each phase to support the widest variety of control algorithms. * 600 V - 30 A 3-Phase IGBT Inverter with Integral Gate Drivers and Protection * Low-Loss, Short-Circuit Rated IGBTs * Very Low Thermal Resistance Using Al2O3 DBC Substrate * Built-In Bootstrap Diodes and Dedicated Vs Pins Simplify PCB Layout * Separate Open-Emitter Pins from Low-Side IGBTs for Three-Phase Current Sensing * Single-Grounded Power Supply * Isolation Rating: 2500 Vrms / min. Applications * Motion Control - Home Appliance / Industrial Motor Related Resources * AN-9044 - Motion SPM(R) 3 Series Users Guide Figure 1. Package Overview Package Marking and Ordering Information Device Device Marking Package Packing Type Quantity FSBB30CH60CT FSBB30CH60CT SPMCC-027 Rail 10 (c)2012 Fairchild Semiconductor Corporation FSBB30CH60CT Rev. C3 1 www.fairchildsemi.com FSBB30CH60CT Motion SPM(R) 3 Series January 2014 FSBB30CH60CT Motion SPM(R) 3 Series Integrated Power Functions * 600 V - 30 A IGBT inverter for three-phase DC / AC power conversion (please refer to Figure 3) Integrated Drive, Protection, and System Control Functions * For inverter high-side IGBTs: gate drive circuit, high-voltage isolated high-speed level shifting control circuit Under-Voltage Lock-Out Protection (UVLO) Note: Available bootstrap circuit example is given in Figures 12 and 13. * For inverter low-side IGBTs: gate drive circuit, Short-Circuit Protection (SCP) control supply circuit Under-Voltage Lock-Out Protection (UVLO) * Fault signaling: corresponding to UVLO (low-side supply) and SC faults * Input interface: active-HIGH interface, works with 3.3 / 5 V logic, Schmitt-trigger input Pin Configuration Figure 2. Top View (c)2012 Fairchild Semiconductor Corporation FSBB30CH60CT Rev. C3 2 www.fairchildsemi.com FSBB30CH60CT Motion SPM(R) 3 Series Pin Descriptions Pin Number Pin Name 1 VCC(L) Pin Description Low-Side Common Bias Voltage for IC and IGBTs Driving 2 COM Common Supply Ground 3 IN(UL) Signal Input for Low-Side U-Phase 4 IN(VL) Signal Input for Low-Side V-Phase 5 IN(WL) Signal Input for Low-Side W-Phase Fault Output 6 VFO 7 CFOD Capacitor for Fault Output Duration Selection Capacitor (Low-Pass Filter) for Short-Circuit Current Detection Input 8 CSC 9 IN(UH) Signal Input for High-Side U-Phase 10 VCC(H) High-Side Common Bias Voltage for IC and IGBTs Driving 11 VB(U) High-Side Bias Voltage for U-Phase IGBT Driving 12 VS(U) High-Side Bias Voltage Ground for U-Phase IGBT Driving 13 IN(VH) Signal Input for High-Side V-Phase 14 VCC(H) High-Side Common Bias Voltage for IC and IGBTs Driving 15 VB(V) High-Side Bias Voltage for V-Phase IGBT Driving 16 VS(V) High-Side Bias Voltage Ground for V Phase IGBT Driving 17 IN(WH) Signal Input for High-Side W-Phase 18 VCC(H) High-Side Common Bias Voltage for IC and IGBTs Driving 19 VB(W) High-Side Bias Voltage for W-Phase IGBT Driving 20 VS(W) High-Side Bias Voltage Ground for W-Phase IGBT Driving 21 NU Negative DC-Link Input for U-Phase 22 NV Negative DC-Link Input for V-Phase 23 NW Negative DC-Link Input for W-Phase 24 U Output for U-Phase 25 V Output for V-Phase 26 W Output for W-Phase 27 P Positive DC-Link Input (c)2012 Fairchild Semiconductor Corporation FSBB30CH60CT Rev. C3 3 www.fairchildsemi.com FSBB30CH60CT Motion SPM(R) 3 Series Internal Equivalent Circuit and Input/Output Pins P (27) (19) VB(W) VB (18) VCC(H) (17) IN(WH) (20) VS(W) (15) VB(V) (13) IN(VH) (16) VS(V) (11) VB(U) VS W (26) VCC COM IN OUT VS V (25) VB (10) VCC(H) (9) IN(UH) (12) VS(U) (8) CSC VCC COM IN OUT VS U (24) C(SC) OUT(WL) (7) CFOD C(FOD) (6) VFO NW (23) VFO (5) IN(WL) (3) IN(UL) OUT VB (14) VCC(H) (4) IN(VL) VCC COM IN IN(WL) OUT(VL) IN(VL) NV (22) IN(UL) (2) COM COM (1) VCC(L) VCC OUT(UL) VSL NU (21) Figure 3. Internal Block Diagram 1st Notes: 1. Inverter low-side is composed of three IGBTs, freewheeling diodes for each IGBT, and one control IC. It has gate drive and protection functions. 2. Inverter power side is composed of four inverter DC-link input terminals and three inverter output terminals. 3. Inverter high-side is composed of three IGBTs, freewheeling diodes, and three drive ICs for each IGBT. (c)2012 Fairchild Semiconductor Corporation FSBB30CH60CT Rev. C3 4 www.fairchildsemi.com unless otherwise specified.) Inverter Part Symbol VPN VPN(Surge) VCES Parameter Conditions Supply Voltage Applied between P - NU, NV, NW Supply Voltage (Surge) Applied between P - NU, NV, NW Rating Unit 450 V Collector - Emitter Voltage 500 V 600 V IC Each IGBT Collector Current TC = 25C, TJ 150C 30 A ICP Each IGBT Collector Current (Peak) TC = 25C, TJ 150C, Under 1 ms Pulse Width 60 A PC Collector Dissipation TC = 25C per Chip 78 W TJ Operating Junction Temperature (2nd Note 1) - 40 ~ 150 C Rating Unit 2nd Notes: 1. The maximum junction temperature rating of the power chips integrated within the Motion SPM(R) 3 product is 150C (at TC 125C). Control Part Symbol Parameter Conditions VCC Control Supply Voltage Applied between VCC(H), VCC(L) - COM 20 V VBS High-Side Control Bias Voltage Applied between VB(U) - VS(U), VB(V) - VS(V), VB(W) - VS(W) 20 V VIN Input Signal Voltage Applied between IN(UH), IN(VH), IN(WH), -0.3 ~ VCC + 0.3 IN(UL), IN(VL), IN(WL) - COM V VFO Fault Output Supply Voltage Applied between VFO - COM -0.3 ~ VCC + 0.3 V IFO Fault Output Current Sink Current at VFO pin VSC Current-Sensing Input Voltage Applied between CSC - COM 5 mA -0.3 ~ VCC + 0.3 V Rating Unit 600 V Bootstrap Diode Part Symbol VRRM Parameter Conditions Maximum Repetitive Reverse Voltage IF Forward Current TC = 25C, TJ 150C IFP Forward Current (Peak) TC = 25C, TJ 150C Width TJ Operating Junction Temperature 0.5 A 2.0 A -40 ~ 150 C Rating Unit 400 V -40 ~ 125 C Under 1 ms Pulse Total System Symbol Parameter Conditions VPN(PROT) Self-Protection Supply Voltage Limit (Short-Circuit Protection Capability) VCC = VBS = 13.5 ~ 16.5 V TJ = 150C, Non-Repetitive, < 2 s TC Module Case Operation Temperature -40CTJ 150C, See Figure 2 TSTG Storage Temperature VISO Isolation Voltage -40 ~ 125 C 2500 Vrms Typ. Max. Unit 60 Hz, Sinusoidal, AC 1 Minute, Connect Pins to Heat Sink Plate Thermal Resistance Symbol Rth(j-c)Q Parameter Junction to Case Thermal Resistance Rth(j-c)F Conditions Min. Inverter IGBT Part (per 1 / 6 module) - - 1.60 C / W Inverter FWDi Part (per 1 / 6 module) - - 2.40 C / W 2nd Notes: 2. For the measurement point of case temperature (TC), please refer to Figure 2. (c)2012 Fairchild Semiconductor Corporation FSBB30CH60CT Rev. C3 5 www.fairchildsemi.com FSBB30CH60CT Motion SPM(R) 3 Series Absolute Maximum Ratings (TJ = 25C, Inverter Part Symbol VCE(SAT) VF HS tON Parameter Conditions Min. Typ. Max. Unit Collector - Emitter Saturation VCC = VBS = 15 V Voltage VIN = 5 V IC = 30 A, TJ = 25C - 2.0 2.6 V FWDi Forward Voltage VIN = 0 V IF = 30 A, TJ = 25C - 1.9 2.5 V Switching Times VPN = 300 V, VCC = VBS = 15 V IC = 30 A VIN = 0 V 5 V, Inductive Load (2nd Note 3) - 0.75 - s - 0.2 - s - 0.4 - s - 0.1 - s tC(ON) tOFF tC(OFF) - 0.1 - s - 0.55 - s - 0.35 - s - 0.4 - s tC(OFF) - 0.1 - s trr - 0.1 - s - - 1 mA trr LS VPN = 300 V, VCC = VBS = 15 V IC = 30 A VIN = 0 V 5 V, Inductive Load (2nd Note 3) tON tC(ON) tOFF Collector - Emitter Leakage VCE = VCES Current ICES 2nd Notes: 3. tON and tOFF include the propagation delay of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally. For the detailed information, please see Figure 4. Control Part Symbol IQCCL Parameter Quiescent VCC Supply Current IQCCH Conditions Min. Typ. Max. Unit VCC = 15 V IN(UL, VL, WL) = 0 V VCC(L) - COM - - 23 mA VCC = 15 V IN(UH, VH, WH) = 0 V VCC(H) - COM - - 600 A VB(U) - VS(U), VB(V) - VS(V), VB(W) - VS(W) - - 500 A IQBS Quiescent VBS Supply Current VBS = 15 V IN(UH, VH, WH) = 0 V VFOH Fault Output Voltage VSC = 0 V, VFO Circuit: 4.7 k to 5 V Pull-up 4.5 - - V VSC = 1 V, VFO Circuit: 4.7 k to 5 V Pull-up - - 0.8 V 0.45 0.50 0.55 V VFOL Short-Circuit Current Trip Level VCC = 15 V (2nd Note 4) Over-Temperature Protection Temperature at LVIC - 160 - C TSD Over-Temperature Protection Hysterisis Temperature at LVIC - 5 - C UVCCD Supply Circuit Under-Voltage Protection Detection Level 10.7 11.9 13.0 V Reset Level 11.2 12.4 13.4 V VSC(ref) TSD UVCCR UVBSD Detection Level UVBSR Reset Level 10 11 12 V 10.5 11.5 12.5 V tFOD Fault-Out Pulse Width CFOD = 33 nF (2nd Note 5) 1.0 1.8 - ms VIN(ON) ON Threshold Voltage 2.8 - - V VIN(OFF) OFF Threshold Voltage Applied between IN(UH), IN(VH), IN(WH), IN(UL), IN(VL), IN(WL) - COM - - 0.8 V 2nd Notes: 4. Short-circuit protection is functioning only at the low-sides. 5. The fault-out pulse width tFOD depends on the capacitance value of CFOD according to the following approximate equation: CFOD = 18.3 x 10-6 x tFOD [F] (c)2012 Fairchild Semiconductor Corporation FSBB30CH60CT Rev. C3 6 www.fairchildsemi.com FSBB30CH60CT Motion SPM(R) 3 Series Electrical Characteristics (TJ = 25C, unless otherwise specified.) FSBB30CH60CT Motion SPM(R) 3 Series 100% I C 100% I C trr V CE IC IC V CE V IN V IN 0 tON tOFF tC(ON) V IN(ON) tC(OFF) V IN(OFF) 10% IC 90% I C 10% V CE 10% V CE 10% I C (b) turn-off (a) turn-on Figure 4. Switching Time Definition SWITCHING LOSS(ON) VS. COLLECTOR CURRENT SWITCHING LOSS(OFF) VS. COLLECTOR CURRENT 900 VCE=300V 2000 V =15V CC 1800 VIN=5V TJ=25 1600 TJ=150 SWITCHING LOSS, ESW(OFF) [uJ] SWITCHING LOSS, ESW(ON) [uJ] 2200 1400 1200 1000 800 600 400 200 VCE=300V 800 VCC=15V VIN=5V 700 TJ=25 TJ=150 600 500 400 300 200 100 0 0 0 3 6 9 12 15 18 21 24 27 30 0 33 3 6 9 12 15 18 21 24 27 30 33 COLLECTOR CURRENT, Ic [AMPERES] COLLECTOR CURRENT, Ic [AMPERES] Figure 5. Switching Loss Characteristics (Typical) (c)2012 Fairchild Semiconductor Corporation FSBB30CH60CT Rev. C3 7 www.fairchildsemi.com Symbol Parameter Conditions Min. Typ. Max. Unit VF Forward Voltage IF = 0.1 A, TC = 25C - 2.5 - V trr Reverse-Recovery Time IF = 0.1 A, TC = 25C - 80 - ns Built-in Bootstrap Diode VF-IF Characteristic 1.0 0.9 0.8 0.7 IF [A] 0.6 0.5 0.4 0.3 0.2 0.1 o TC=25 C 0.0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 VF [V] Figure 6. Built-in Bootstrap Diode Characteristics 2nd Notes: 6. Built-in bootstrap diode includes around 15 resistance characteristic. Recommended Operating Conditions Symbol Parameter Conditions Applied between P - NU, NV, NW Min. Typ. Max. Unit - 300 400 V VPN Supply Voltage VCC Control Supply Voltage Applied between VCC(H), VCC(L) - COM 13.5 15.0 16.5 V VBS High-Side Bias Voltage Applied between VB(U) - VS(U), VB(V) - VS(V), VB(W) - VS(W) 13.0 15.0 18.5 V -1 - 1 V / s 2 - - s - 20 kHz 4 V dVCC / dt, Control Supply Variation dVBS / dt tdead Blanking Time for Preventing Each Input Signal Arm-Short fPWM PWM Input Signal -40C TC 125C, -40C TJ 150C - VSEN Voltage for Current Sensing Applied between NU, NV, NW - COM (Including Surge Voltage) -4 (c)2012 Fairchild Semiconductor Corporation FSBB30CH60CT Rev. C3 8 www.fairchildsemi.com FSBB30CH60CT Motion SPM(R) 3 Series Bootstrap Diode Part Parameter Mounting Torque Conditions Mounting Screw: M3 Device Flatness Min. Typ. Max. Unit 0.51 0.62 0.80 N*m 0 - +150 m - 15.00 - g Recommended 0.62 N*m See Figure 7 Weight (+) (+) Figure 7. Flatness Measurement Position (c)2012 Fairchild Semiconductor Corporation FSBB30CH60CT Rev. C3 9 www.fairchildsemi.com FSBB30CH60CT Motion SPM(R) 3 Series Mechanical Characteristics and Ratings FSBB30CH60CT Motion SPM(R) 3 Series Time Charts of Protective Function Input Signal Protection Circuit State RESET SET RESET UVCCR a1 Control Supply Voltage a6 UVCCD a3 a2 a7 a4 Output Current a5 Fault Output Signal a1 : Control supply voltage rises: after the voltage rises UVCCR, the circuits start to operate when next input is applied. a2 : Normal operation: IGBT ON and carrying current. a3 : Under-voltage detection (UVCCD). a4 : IGBT OFF in spite of control input condition. a5 : Fault output operation starts. a6 : Under-voltage reset (UVCCR). a7 : Normal operation: IGBT ON and carrying current. Figure 8. Under-Voltage Protection (Low-Side) Input Signal Protection Circuit State RESET SET RESET UVBSR Control Supply Voltage b5 b1 UVBSD b3 b6 b2 b4 Output Current High-level (no fault output) Fault Output Signal b1 : Control supply voltage rises: after the voltage reaches UVBSR, the circuits start to operate when next input is applied. b2 : Normal operation: IGBT ON and carrying current. b3 : Under-voltage detection (UVBSD). b4 : IGBT OFF in spite of control input condition, but there is no fault output signal. b5 : Under-voltage reset (UVBSR). b6 : Normal operation: IGBT ON and carrying current. Figure 9. Under-Voltage Protection (High-Side) (c)2012 Fairchild Semiconductor Corporation FSBB30CH60CT Rev. C3 10 www.fairchildsemi.com c6 Protection Circuit State SET Internal IGBT Gate - Emitter Voltage FSBB30CH60CT Motion SPM(R) 3 Series Lower Arms Control Input c7 RESET c4 c3 c2 SC c1 c8 Output Current SC Reference Voltage Sensing Voltage of Shunt Resistance Fault Output Signal c5 CR Circuit Time Constant Delay (with the external shunt resistance and CR connection) c1 : Normal operation: IGBT ON and carrying current. c2 : Short-circuit current detection (SC trigger). c3 : Hard IGBT gate interrupt. c4 : IGBT turns OFF. c5 : Fault output timer operation starts: the pulse width of the fault output signal is set by the external capacitor CFO. c6 : Input "LOW": IGBT OFF state. c7 : Input "HIGH": IGBT ON state, but during the active period of fault output, the IGBT doesn't turn ON. c8 : IGBT OFF state. Figure 10. Short-Circuit Protection (Low-Side Operation Only) (c)2012 Fairchild Semiconductor Corporation FSBB30CH60CT Rev. C3 11 www.fairchildsemi.com FSBB30CH60CT Motion SPM(R) 3 Series +5 V SPM RPF = 4.7 100 IN(UH) , IN(VH) , IN(WH) 100 MCU IN (UL) , IN (VL) , IN(WL) 100 1 nF VFO CPF = 1 nF 1 nF 1 nF COM Figure 11. Recommended MCU I/O Interface Circuit 3rd Notes: 1. RC coupling at each input might change depending on the PWM control scheme in the application and the wiring impedance of the application's printed circuit board. The input signal section of the Motion SPM(R) 3 product integrates a 5 k(typ.) pull-down resistor. Therefore, when using an external filtering resistor, please pay attention to the signal voltage drop at input terminal. 2. The logic input works with standard CMOS or LSTTL outputs. These values depend on PWM control algorithm. One-Leg Diagram of Motion SPM 3 Product P 0.1 F 15 V 22 F Vcc VB IN HO COM VS Inverter Output Vcc 1000 F 1 F IN OUT COM VSL N Figure 12. Recommended Bootstrap Operation Circuit and Parameters 3rd Notes: 3. The ceramic capacitor placed between VCC - COM should be over 1 F and mounted as close to the pins of the Motion SPM 3 product as possible. (c)2012 Fairchild Semiconductor Corporation FSBB30CH60CT Rev. C3 12 www.fairchildsemi.com (19) V B(W ) (18) V CC(H) RS C BS Gating WH C BSC (17) IN(WH) (20) V S(W ) C PS (15) V B(V) (14) V CC(H) RS C BS Gating VH C BSC (16) V S(V) C PS M C U (13) IN (VH) (11) V B(U) (10) V CC(H) RS C BS Gating UH C BSC (9) IN (UH) (12) V S(U) C PS P (27) VB VCC OUT COM IN W (26) VS VB VCC OUT COM IN VS V (25) M VB VCC C DCS OUT COM IN VS Vdc U (24) RF R PF (8) CSC C SC (7) C FOD RS C FOD Fault (6) V FO RS (5) IN(WL) RS (4) IN (VL) RS (3) IN(UL) Gating WL Gating VL C(SC) OUT(WL) C(FOD) N W (23) R SW VFO IN(WL) OUT(VL) IN(VL) NV (22) R SV IN(UL) Gating UL (2) COM C BPF C PS C PS C PS COM C PF (1) V CC(L) OUT(UL) VCC C SP15 Input Signal for Short-Circuit Protection VSL N U (21) R SU C SPC15 R FW W-Phase Current V-Phase Current U-Phase Current R FV R FU C FW CFV C FU Figure 13. Typical Application Circuit 4th Notes: 1. To avoid malfunction, the wiring of each input should be as short as possible (less than 2 - 3cm). 2. By virtue of integrating an application-specific type of HVIC inside the Motion SPM(R) 3 product, direct coupling to MCU terminals without any optocoupler or transformer isolation is possible. 3. VFO output is open-collector type. This signal line should be pulled up to the positive side of the 5 V power supply with approximately 4.7 k resistance (please refer to Figure11). 4. CSP15 of around seven times larger than bootstrap capacitor CBS is recommended. 5. VFO output pulse width should be determined by connecting an external capacitor (CFOD) between CFOD (pin 7) and COM (pin 2). (Example: if CFOD = 33 nF, then tFO = 1.8 ms (typ.)) Please refer to the 2nd note 5 for calculation method. 6. Input signal is active-HIGH type. There is a 5 k resistor inside the IC to pull down each input signal line to GND. RC coupling circuits should be used to prevent input signal oscillation. RSCPS time constant should be selected in the range 50 ~ 150 ns. CPS should not be less than 1 nF (recommended RS = 100 , CPS = 1 nF). 7. To prevent errors of the protection function, the wiring around RF and CSC should be as short as possible. 8. In the short-circuit protection circuit, please select the RFCSC time constant in the range 1.5 ~ 2.0 s. 9. Each capacitor should be mounted as close to the pins of the Motion SPM 3 product as possible. 10. To prevent surge destruction, the wiring between the smoothing capacitor and the P & GND pins should be as short as possible. The use of a high-frequency non-inductive capacitor of around 0.1 ~ 0.22 F between the P & GND pins is recommended. 11. Relays are used in almost every systems of electrical equipment in home appliances. In these cases, there should be sufficient distance between the MCU and the relays. 12. CSPC15 should be over 1 F and mounted as close to the pins of the Motion SPM 3 product as possible. (c)2012 Fairchild Semiconductor Corporation FSBB30CH60CT Rev. C3 13 www.fairchildsemi.com FSBB30CH60CT Motion SPM(R) 3 Series +5 V +15 V FSBB30CH60CT Motion SPM(R) 3 Series Detailed Package Outline Drawings Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or data on the drawing and contact a FairchildSemiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide therm and conditions, specifically the the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor's online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/MO/MOD27BA.pdf (c)2012 Fairchild Semiconductor Corporation FSBB30CH60CT Rev. C3 14 www.fairchildsemi.com (c)2012 Fairchild Semiconductor Corporation FSBB30CH60CT Rev. C3 15 www.fairchildsemi.com Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Fairchild Semiconductor: FSBB30CH60CT