For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
9
9 - 26
HMC313 / 313E
General Description
Features
The HMC313 & HMC313E are GaAs InGaP
Heterojunction Bipolar Transistor (HBT) MMIC
ampli ers that operate from a single Vcc supply.
The surface mount SOT26 ampli er can be used
as a broadband gain stage or used with external
matching for optimized narrow band applications.
With Vcc biased at +5V, the HMC313(E) offers 17 dB
of gain and +15 dBm of saturated power while only
requiring 50 mA of current.
P1dB Output Power: +14 dBm
Output IP3: +27 dBm
Gain: 17 dB
Single Supply: +5V
High Reliability GaAs HBT Process
Ultra Small Package: SOT26
Included in the HMC-DK001 Designer’s Kit
Ideal as a Driver & Ampli er for:
• 2.2 - 2.7 GHz MMDS
• 3.5 GHz Wireless Local Loop
• 5 - 6 GHz UNII & HiperLAN
Electrical Speci cations, TA = +25 °C, Vcc = +5.0V
Parameter Vcc = +5V Units
Min. Typ. Max.
Frequency Range DC - 6 GHz
Gain 14 17 20 dB
Gain Variation Over Temperature 0.02 0.03 dB/°C
Input Return Loss 7dB
Output Return Loss 6dB
Reverse Isolation 30 dB
Output Power for 1 dB Compression (P1dB) @ 1.0 GHz 11 14 dBm
Saturated Output Power (Psat) @ 1.0 GHz 15 dBm
Output Third Order Intercept (IP3) @ 1.0 GHz 24 27 dBm
Noise Figure 6.5 dB
Supply Current (Icc) 50 mA
Note: Data taken with broadband bias tee on device output.
Functional Diagram
Typical Applications
GaAs InGaP HBT MMIC BROADBAND
AMPLIFIER GAIN BLOCK, DC - 6 GHz
v06.0109