PEF33608EV11 S LL8D - INTEL - Datasheet.Directory

1SS226

Switching Diodes Silicon Epitaxial Planar

1SS226

Start of commercial production

1982-09

1. Applications

Applications

• Ultra-High-Speed Switching

2. Features

Features

(1) AEC-Q101 qualified (Note 1)

Note 1: For detail information, please contact to our sales.

3. Packaging and Internal Circuit

Packaging and Internal Circuit

S-Mini

1: Anode 1

2: Cathode 2

3: Cathode1 / Anode 2

2018-11-16

Rev.4.0

Toshiba Electronic Devices & Storage Corporation

1SS226

4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T

Absolute Maximum Ratings (Note) (Unless otherwise specified, T

Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta

a = 25

= 25

= 25 



)

)

Characteristics

Peak reverse voltage

Reverse voltage

Peak forward current

Average rectified current

Power dissipation

Non-repetitive peak forward surge current

Junction temperature

Storage temperature

Symbol

VRM

IFM

IFSM

Tstg

Note

(Note 1)

(Note 2)

(Note 1), (Note 3)

Rating

300

100

150

125

-55 to 125

Unit



Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Unit rating. Total rating = Unit rating × 70%

Note 2: Mounted on a glass epoxy circuit board of 20 mm × 20 mm, Pad dimension of 4 mm × 4 mm.

Note 3: Measured with a 10 ms pulse.

5. Electrical Characteristics (Unless otherwise specified, T

Electrical Characteristics (Unless otherwise specified, T

Electrical Characteristics (Unless otherwise specified, Ta

a = 25

= 25

= 25 



)

)

Characteristics

Forward voltage

Reverse current

Total capacitance

Reverse recovery time

Symbol

VF(1)

VF(2)

VF(3)

IR(1)

IR(2)

trr

Test Condition

IF = 1 mA

IF = 10 mA

IF = 100 mA

VR = 30 V

VR = 80 V

VR = 0 V, f = 1 MHz

IF = 10 mA

See Fig. 5.1.

Min



Typ.

0.60

0.72

0.90



0.9

1.6

Max



1.20

0.1

0.5

3.0

4.0

Unit

µA

Fig.

Fig. 5.1

5.1

5.1 Reverse recovery time (t

Reverse recovery time (t

Reverse recovery time (trr

rr) Test circuit

) Test circuit

2018-11-16

Rev.4.0

Toshiba Electronic Devices & Storage Corporation

1SS226

6. Marking

Marking

Fig.

Fig. 6.1

6.1

6.1 Marking

Marking

7. Land Pattern Dimensions (for reference only)

Land Pattern Dimensions (for reference only)

Fig.

Fig. 7.1

7.1

7.1 S-Mini (Unit: mm)

S-Mini (Unit: mm)

2018-11-16

Rev.4.0

Toshiba Electronic Devices & Storage Corporation

1SS226

8. Characteristics Curves (Note)

Characteristics Curves (Note)

Fig.

Fig. 8.1

8.1

8.1 I

F - V

- V

- VF

FFig.

Fig.

Fig. 8.2

8.2

8.2 I

R - V

- V

- VR

Fig.

Fig. 8.3

8.3

8.3 C

t - V

- V

- VR

RFig.

Fig.

Fig. 8.4

8.4

8.4 P

D - T

- T

- Ta

Note: The above characteristics curves are presented for reference only and not guaranteed by production test,

unless otherwise noted.

2018-11-16

Rev.4.0

Toshiba Electronic Devices & Storage Corporation

1SS226

Package Dimensions

Unit: mm

Weight: 12 mg (typ.)

Package Name(s)

TOSHIBA: 2-3F1S

Nickname: S-Mini

2018-11-16

Rev.4.0

Toshiba Electronic Devices & Storage Corporation

1SS226

https://toshiba.semicon-storage.com/

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precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application

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2018-11-16

Rev.4.0

Toshiba Electronic Devices & Storage Corporation