Medium power transistor(80V, 0.7A) 2SB1189 / 2SB1238 Dimensions (Unit : mm) Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SD1767 / 2SD1859. 2SB1189 4.0 1.5 0.4 1.0 VCBO -80 Collector-emitter voltage VCEO -80 Emitter-base voltage VEBO -5 IC -0.7 V V V A 2SB1189 0.5 PC W 2 2SB1238 1 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 1.6 (1) Base (2) Collector (3) Emitter ROHM : MPT3 EIAJ : SC-62 1 2 C C 1 When mounted on a 40x40x0.7 mm ceramic board. 2 Printed circuit board 1.7 mm thick, collector plating 1cm2 or larger. 2SB1238 2.5 Type Denotes h 2SB1189 MPT3 QR 2SB1238 ATV QR BD T100 1000 - TV2 2500 1.0 0.65Max. 0.5 4.4 Packaging specifications and hFE 14.5 0.9 6.8 Package hFE Marking Code Basic ordering unit (pieces) 4.5 0.5 1.5 Unit 0.4 Limits 1.5 0.4 Symbol Collector power dissipation (1) (3) Parameter Collector-base voltage Collector current 0.5 (2) 3.0 Absolute maximum ratings (Ta=25C) 2.5 (1) (2) (3) 2.54 2.54 1.05 0.45 FE Taping specifications ROHM : ATV (1) Emitter (2) Collector (3) Base Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO -80 - - V IC=-50A Collector-emitter breakdown voltage BVCEO -80 - - V IC=-2mA Conditions Emitter-base breakdown voltage IE=-50A BVEBO -5 - - V Collector cutoff current ICBO - - -0.5 A VCB=-50V Emitter cutoff current IEBO - - -0.5 A VEB=-4V VCE(sat) - -0.2 -0.4 V IC/IB=-500mA/-50mA hFE 120 - 390 - VCE/IC=-3V/-0.1A fT - 100 - MHz Cob - 14 20 pF Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. VCE=-10V, IE=50mA, f=100MHz VCB=-10V, IE=0A, f=1MHz 1/2 2010.07 - Rev.B 2SB1189 / 2SB1238 Data Sheet Electrical characteristics curves -50 A -8m -7mA -6mA -0.8 -5mA -0.6 -4mA -3mA -0.4 -2mA -0.2 -1mA IB= 0mA 0 -2 0 -4 -6 -8 -10 -5 -2 -1 -0.5 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Ta=25C -0.2 -0.1 IC/IB=20/1 -0.05 IC/IB=10/1 -0.02 -5 -10 -20 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 Ta=25C VCE= -5V 500 200 100 50 -50 -100 -200 -500 2 5 10 20 50 EMITTER CURRENT : IE (mA) Fig.5 Gain bandwidth product vs. emitter current -0.5 -1 -2 -5 -10 -20 EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Emitter input capacitance vs. emitter-base voltage www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. -0.5 COLLECTOR CURRENT : IC (A) EMITTER INPUT CAPACITANCE : Cib (pF) 10 -5 -10 -20 -50 -100 -200 -500 COLLECTOR CURRENT : IC (mA) Fig.3 DC current gain vs. collector current Ta=25C f=1MHz IE=0A 100 50 Cob 20 10 -0.5 -1 -2 -5 -10 -20 Fig.6 Collector output capacitance vs. collector-base voltage -0.2 s 0m =1 Pw s m 00 20 -2 -1.0 DC 50 -1 =1 Pw Ta=25C f=1MHz IC=0A -3V COLLECTOR TO BASE VOLTAGE : VCE (V) Fig.4 Collector-emitter saturation voltage vs.collector current Cib 100 -1V 0 COLLECTOR CURRENT : IC (mA) 100 VCE= -5V 200 50 Fig.2 Ground emitter propagation characteristics 20 -0.01 -1 500 BASE TO EMITTER VOLTAGE : VBE (V) TRANSITION FREQUENCY : fT (MHz) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Fig.1 Ground emitter output characteristics Ta=25C -0.2 -0.1 -10 Ta=25C VCE= -6V -20 DC CURRENT GAIN : hFE -10mA -9mA COLLECTOR OUTPUT CAPACITANCE : Cob (pF) Ta=25C COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (A) -1.0 -0.1 -0.05 -0.02 -0.01 -0.005 -0.002 Ta=25C Single pulse -0.001 -0.1 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.8 Safe operating area (2SB1189) 2/2 2010.07 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. 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