Transistors 2SK2103 @Features 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to use in parallel. small switching (30V, 2A) @External dimensions (Units: mmm) O5+0.1 2 G.4 }OEOS | 0.40.1 1.0+0.2 1540.1 Abbreviated symbol: KA (1) Gate (2) Drain (3) Source @Structure Silicon N-channel MOSFET transistor ROHM : MPT3 EIAJ : SC-62 @Absolute maximum ratings (Ta = 25) Parameter Symbol Limits Drain-source voltage Voss 30 v Gate-source voltage Vass +20 Vv ; Continuous 2 A Drain current Pulsed Ipp* 8 A Drain reverse Continuous IpR 2 A current Pulsed tone*? 8 A Total power dissipation Po*? 2 Ww Channel temperature Tch 150 Cc Storage temperature Tstg 55~150 Cc 1 Pwa10 ys, Duty cycles124 * 2 On 40x 40x 0.7 mm aluminum-ceramic board. @Packaging specifications Package Taping Type | Code T100 Basic ordering (pieces) 1000 28K2103 O $9 MOS FET P|Transistors 25K2103 @electricat characteristics (Ta = 25C) Parameter Symbol | Min. | Typ. ; Max. | Unit Conditions Gate leakage current lass - |2+100) nA | Vos-b20V, Vos=0V Drain-source breakdown voltage| Vien)pss| 30 _ _ Vv lb=1mA, Vos=0V Drain cutoff current Inss _ _ 10 HA | Vos=30V, Vas=0V Gate threshold voltage Vas th) 1 - 2.5 Vv Vos=10V, lo=1mA Drain-source on-state resistance| Ros (or) oes o4 Q p= tA, Vos 10V _- 0.38 | 0.6 ID=1A, Vos=4V Forward transfer admittance IY} 4 jon S| Vos=10, lb=1A Input capacitance Ciss 230 _ pF | Vos=10V Output capacitance Coss - 120 _ pF | Vas=0V Reverse transfer capacitance Cres _ 60 _- pF f=1MHz Turn-on delay time td fon) - 10 _ ns IpD=1A, Voo=15V Rise time tr _- 25 _ ns | Vas=10V Turn-off delay time ta (ort) 60 _ ns RAL=159 Fall time h _ 60 _- ns | Ae=100 Reverse recovery time ter _ 70 _ ns lor=2A, Vas=OV, di/dt=50A/ us * PwS300 ws, Duty cyclesi% @ Electrical characteristic curves 10 - Ta=25C Pulsed 5 i$ af =< aes ee = Ss, oa = s = 2 2 b L C z 1 a Fn a gg ac a 5 5 & oO o Oo z S 4040X0- < z 5 5 & 04 0. 0. 4 5 DRAIN-SOURCE VOLTAGE : Vos (V) DRAIN-SOURCE VOLTAGE: Vos (V) GATE-SOURCE VOLTAGE: Vas (V) Fig.1 Maximum Safe Operating Area Fig.2 Typical Output Characteristics Fig.2 Typicat Transfer Characteristics 100 RomTransistors 2SK2103 eee eee eee ee eens @ Electrical characteristic curves 4 . Vos=10 S ~ Vos=10V os Vos=4V ~ lo=1mA a Pulsed a Pulsed i ; an) g g Wu a a 1 9 wi Ww B oo Oo 3 ae 0. coz S 2 3 E 3 5 a 28 zi = mo o1 ec % 1 a # a H os of F ED BoD w nS n 6 0 0.01 150 9005001002 0.050102 051 2 5 1 CHANNEL TEMPERATURE : Teh ("C) DRAIN CURRENT: Io (A) DRAIN CURRENT : Io (A) Fig.4 Gate Threshold Voltage vs. Fig.5 Static Drain-Souree On-State Fig.6 Static Drain-Source On-State Channel Temperature Resistance vs. Drain Current (1) Resistance vs. Drain Current (I } B 19 = 06 Ta=25C ~ Vos=10V] _. sg Pulsed a b=1A #5 z _ Pulsed aan 05 & u 3 2 wy os 88 E. aoe cz = O45 4 2 84 oa Bb a zi 29 a 02 rc c Le O41 w 02 & u % of of & 0.05 E o4 Bow mz gs 2 9.00 as ao 0 z , 2 GATE-SOURCE VOLTAGE : Ves (V) CHANNEL TEMPERATURE : Teh (C) DAAIN CURRENT: Ip (A) Fig.7 Static Drain-Source Fig.6 Static Drain-Source Fig.@ Forward Transfer Admittance On-State Resistance vs. On-State Resistance vs. vs. Drain Current Gate-Source Voltage Channel Temperature 5 5 Vas=0V z Ta=25'C Ss p| Pulsed ~ 5 g & Vas==10 1 e : & astp2y fe i 05 6 800 & & a 9.2 a 02 wi 200 Zot Zo 2 6 0.05 ao g [ity Ww ou gD i < & 0.02 o S > i 0.01 Wy 0.01 0.005 0.005 a 0.5 1 5 SOURCE-DRAIN VOLTAGE : Vso (V) SOURCE-DRAIN VOLTAGE : Veo (V) DRAIN-SOQURCE VOLTAGE: Vos. (V) Fig.10 Reverse Drain Gurrent vs. Fig.11 Reverse Drain Current vs. Fig.12 Typical Capacitance vs. Source-Drain Voltage (I) Source-Drain Voltage (1 ) Drain-Source Voltage Rom 101 MOS FETTransistors 28SK2103 @ Electrical characteristic curves @ T Bw ~ =O i 23 = a to - Fa 4.1 40X40X0. Ww g ae = 8 4 Ta=25C 6 ae Gintene) Cer (+d mn tobe) = = x 0.01 @ nfenc) =B2.5CAW ifs) or er pwa| be) PY 0 Dey DRAIN CURRENT: In (A) PULSE WIDTH: PW (s) Fig. 13. Switching Characteristics Fig.14 Normalized Transient Thermal Resistance vs. Pulse Width @Switching characteristics measurement circuit Pulse width Ra Fig.15 Switching Time Measurement Circuit Fig.16 Switching Time Waveforms 102 RemNotes @ The contents described in this catalogue are correct as of March 1997. @ No unauthorized transmission or reproduction of this book, either in whole or in part, is permitted. @ The contents of this book are subject to change without notice. Always verify before use that the contents are the latest specifications. If, by any chance, a defect should arise in the equipment as a result of use without verification of the specifications, ROHM CO., LTD., can bear no responsibility whatsoever. @ Application circuit diagrams and circuit constants contained in this data book are shown as examples of standard use and operation. When designing for mass production, please pay careful attention to peripheral conditions. @ Any and all data, including, but not limited to application circuit diagrams, information, and various data, described in this catalogue are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO., LTD., disclaims any warranty that any use of such device shall be free from infringement of any third partys intellectual property rights or other proprietary rights, and further, assumes absolutely no liability in the event of any such infringement, or arising from or connected with or related to the use of such devices. @ Upon the sale of any such devices; other than for the buyer's right to use such devices itself, resell or otherwise dispose of the same; no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD., is granted to any such buyer. The products listed in this catalogue are designed to be used with ordinary electronic equip- ment or devices (such as audio-visual equipment, office-automation equipment, communica- tions devices, electrical appliances, and electronic toys). Should you intend to use these pred- ucts with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, trans- portation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers, or oth- er safety devices} please be sure to consult with our sales representatives in advance. @ Notes when exporting * It is essential to obtain export permission when exporting any of the above products when it falls under the category of strategic material (or labor) as determined by foreign exchange or foreign trade control laws. * Please be sure to consult with our sales representatives to ascertain whether any prod- uct is classified as a strategic material.